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1. 发明授权

US06764911B2 Multiple etch method for fabricating spacer layers 失效
标题翻译：用于制造间隔层的多次蚀刻方法
公开(公告)号：US06764911B2
公开(公告)日：2004-07-20
申请号：US10143227
申请日：2002-05-10
申请人： Jw-Wang Hsu , Ming-Huan Tsai , Mei-Ru Kuo , Baw-Ching Peng , Hun-Jan Tao
发明人： Jw-Wang Hsu , Ming-Huan Tsai , Mei-Ru Kuo , Baw-Ching Peng , Hun-Jan Tao
IPC分类号： H01L21336
CPC分类号： H01L29/6653 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： Within a method for forming a spacer layer from a second layer formed of a second material laminated upon a first layer formed of a first material, in turn formed over a topographic feature, there is employed a three step etch method. The three step etch method employs: (1) a first etch method having a first enhanced etch selectivity for the second material with respect to the first material; (2) a second etch method having a second substantially neutral etch selectivity for the second material with respect to the first material; and (3) a third etch method having a third enhanced etch selectivity for the first material with respect to the second material. In accord with the three step etch method, the spacer layer is fabricated with enhanced dimensional control.
摘要翻译：在由层压在由第一材料形成的第一层上的第二材料形成的第二层形成间隔层的方法中，依次形成在地形特征上，采用三步骤蚀刻方法。三步骤蚀刻方法采用：（1）第一蚀刻方法相对于第一材料具有对第二材料的第一增强蚀刻选择性; （2）对于第二材料相对于第一材料具有第二基本中性蚀刻选择性的第二蚀刻方法; 和（3）第三蚀刻方法，其相对于第二材料具有第一材料的第三增强蚀刻选择性。根据三步蚀刻方法，间隔层用增强的尺寸控制制造。

2. 发明授权

US06436841B1 Selectivity oxide-to-oxynitride etch process using a fluorine containing gas, an inert gas and a weak oxidant 有权
标题翻译：使用含氟气体，惰性气体和弱氧化剂的选择性氧化物 - 氧氮化物蚀刻工艺
公开(公告)号：US06436841B1
公开(公告)日：2002-08-20
申请号：US09949506
申请日：2001-09-10
申请人： Ming Huan Tsai , Bao-Ching Pen , Mei-Ru Kuo , Hun-Jan Tao
发明人： Ming Huan Tsai , Bao-Ching Pen , Mei-Ru Kuo , Hun-Jan Tao
IPC分类号： H01L21302
CPC分类号： H01L21/76897 , H01L21/31116 , H01L21/3144
摘要： A method of forming a borderless contact, comprising the following steps. A substrate having an exposed conductive structure is provided. An oxynitride etch stop layer is formed over the substrate and the exposed conductive structure. An oxide dielectric layer is formed over the oxynitride etch stop layer. The oxide dielectric layer is etched with an etch process having a high selectivity of oxide-to-oxynitride to form a contact hole therein exposing a portion of the oxynitride etch stop layer over at least a portion of the exposed conductive structure. The etch process not appreciably etching the oxynitride etch stop layer and including: a fluorine containing gas; an inert gas; and a weak oxidant. The exposed portion of the oxynitride etch stop layer over at least a portion of the conductive structure is removed. A borderless contact is formed within the contact hole. The borderless contact being in electrical connection with at least a portion of the conductive structure.
摘要翻译：一种形成无边界接触的方法，包括以下步骤。提供具有暴露的导电结构的衬底。在衬底和暴露的导电结构之上形成氮氧化物蚀刻停止层。在氧氮化物蚀刻停止层上形成氧化物介电层。用具有高选择性的氧化物 - 氮氧化物的蚀刻工艺来蚀刻氧化物介电层，以在其中形成接触孔，使暴露的导电结构的至少一部分上的氮氧化物蚀刻停止层的一部分暴露。蚀刻工艺不明显地蚀刻氧氮化物蚀刻停止层，并且包括：含氟气体; 惰性气体和弱氧化剂。除去导电结构的至少一部分上的氧氮化物蚀刻停止层的暴露部分。在接触孔内形成无边界接触。无边界接触与至少一部分导电结构电连接。

3. 发明授权

US06440875B1 Masking layer method for forming a spacer layer with enhanced linewidth control 有权
标题翻译：用于形成具有增强线宽控制的间隔层的掩模层法
公开(公告)号：US06440875B1
公开(公告)日：2002-08-27
申请号：US09848248
申请日：2001-05-02
申请人： Bor-Wen Chan , Mei-Ru Kuo
发明人： Bor-Wen Chan , Mei-Ru Kuo
IPC分类号： H01L2131
CPC分类号： H01L29/6659 , H01L21/31116 , H01L21/31144 , H01L21/823468 , H01L29/6656 , H01L29/7833
摘要： Within a method for forming a spacer layer, there is first provided a substrate having formed thereover a topographic feature in turn having formed thereover a second microelectronic layer formed of a second material having a second thickness in turn having formed thereover a first microelectronic layer formed of a first material having a first thickness. Within the method, the first material serves as an etch stop for second material and the first thickness is less than the second thickness. The first microelectronic layer and the second microelectronic layer are then successively etched to ultimately form a spacer layer with enhanced dimensional control.
摘要翻译：在用于形成间隔层的方法中，首先提供了一种在其上形成有地形特征的基底，其上形成有第二微电子层，第二微电子层由具有第二厚度的第二材料形成，第二材料依次形成有第一微电子层，具有第一厚度的第一材料。在该方法中，第一材料用作第二材料的蚀刻停止件，第一厚度小于第二厚度。然后连续地蚀刻第一微电子层和第二微电子层，以最终形成具有增强的尺寸控制的间隔层。

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