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1. 发明申请

US20110260059A1 PHOTOSENSITIVE IMAGING DEVICES AND ASSOCIATED METHODS 有权
标题翻译：感光成像装置及相关方法
公开(公告)号：US20110260059A1
公开(公告)日：2011-10-27
申请号：US13091969
申请日：2011-04-21
申请人： Jutao Jiang , Jeffrey McKee , Martin U. Pralle
发明人： Jutao Jiang , Jeffrey McKee , Martin U. Pralle
IPC分类号： H01L27/146 , H01L27/148 , H01L27/144
CPC分类号： H01L27/14649 , H01L25/167 , H01L27/1461 , H01L27/14612 , H01L27/14625 , H01L27/1464 , H01L27/14645 , H01L27/14647 , H01L2924/0002 , H04N5/2256 , H04N5/37452 , H04N5/3765 , H04N9/045 , H01L2924/00
摘要： A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.
摘要翻译：根据示例的用于检测红外和可见光的单片传感器包括半导体衬底和耦合到半导体衬底的半导体层。半导体层包括与半导体衬底相对的器件表面。在器件表面形成可见光光电二极管。在器件表面和可见光光电二极管附近也形成红外光电二极管。纹理区域耦合到红外光电二极管并定位成与电磁辐射相互作用。

2. 发明授权

US08692198B2 Photosensitive imaging devices and associated methods 有权
标题翻译：感光成像设备及相关方法
公开(公告)号：US08692198B2
公开(公告)日：2014-04-08
申请号：US13091969
申请日：2011-04-21
申请人： Jutao Jiang , Jeffrey McKee , Martin U. Pralle
发明人： Jutao Jiang , Jeffrey McKee , Martin U. Pralle
IPC分类号： G02F1/01
CPC分类号： H01L27/14649 , H01L25/167 , H01L27/1461 , H01L27/14612 , H01L27/14625 , H01L27/1464 , H01L27/14645 , H01L27/14647 , H01L2924/0002 , H04N5/2256 , H04N5/37452 , H04N5/3765 , H04N9/045 , H01L2924/00
摘要： A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.
摘要翻译：根据示例的用于检测红外和可见光的单片传感器包括半导体衬底和耦合到半导体衬底的半导体层。半导体层包括与半导体衬底相对的器件表面。在器件表面形成可见光光电二极管。在器件表面和可见光光电二极管附近也形成红外光电二极管。纹理区域耦合到红外光电二极管并定位成与电磁辐射相互作用。

3. 发明授权

US08698084B2 Three dimensional sensors, systems, and associated methods 有权
标题翻译：三维传感器，系统和相关方法
公开(公告)号：US08698084B2
公开(公告)日：2014-04-15
申请号：US13418226
申请日：2012-03-12
申请人： Jutao Jiang , Jeffrey McKee , Homayoon Haddad , Chris Sungkwon Hong
发明人： Jutao Jiang , Jeffrey McKee , Homayoon Haddad , Chris Sungkwon Hong
IPC分类号： G01J5/02 , H01L27/14
CPC分类号： H01L27/14647 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/1464
摘要： 3D sensors, systems, and associated methods are provided. In one aspect, for example, a monolithic 3D sensor for detecting infrared and visible light can include a semiconductor substrate having a device surface, at least one visible light photodiode formed at the device surface and at least one 3D photodiode formed at the device surface in proximity to the at least one visible light photodiode. The device can further include a quantum efficiency enhanced infrared light region functionally coupled to the at least one 3D photodiode and positioned to interact with electromagnetic radiation. In one aspect, the quantum efficiency enhanced infrared light region is a textured region located at the device surface.
摘要翻译：提供3D传感器，系统和相关方法。在一个方面，例如，用于检测红外和可见光的单片3D传感器可以包括具有器件表面的半导体衬底，在器件表面处形成的至少一个可见光光电二极管和在器件表面处形成的至少一个3D光电二极管靠近所述至少一个可见光光电二极管。该装置还可以包括功能上耦合到至少一个3D光电二极管并定位成与电磁辐射相互作用的量子效率增强的红外光区域。在一个方面，量子效率增强红外光区域是位于器件表面处的纹理区域。

4. 发明申请

US20130062522A1 THREE DIMENSIONAL SENSORS, SYSTEMS, AND ASSOCIATED METHODS 有权
标题翻译：三维传感器，系统和相关方法
公开(公告)号：US20130062522A1
公开(公告)日：2013-03-14
申请号：US13418226
申请日：2012-03-12
申请人： Jutao Jiang , Jeffrey McKee , Homayoon Haddad , Chris Sungkwon Hong
发明人： Jutao Jiang , Jeffrey McKee , Homayoon Haddad , Chris Sungkwon Hong
IPC分类号： G01J5/22 , B82Y15/00
CPC分类号： H01L27/14647 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/1464
摘要： 3D sensors, systems, and associated methods are provided. In one aspect, for example, a monolithic 3D sensor for detecting infrared and visible light can include a semiconductor substrate having a device surface, at least one visible light photodiode formed at the device surface and at least one 3D photodiode formed at the device surface in proximity to the at least one visible light photodiode. The device can further include a quantum efficiency enhanced infrared light region functionally coupled to the at least one 3D photodiode and positioned to interact with electromagnetic radiation. In one aspect, the quantum efficiency enhanced infrared light region is a textured region located at the device surface.
摘要翻译：提供3D传感器，系统和相关方法。在一个方面，例如，用于检测红外和可见光的单片3D传感器可以包括具有器件表面的半导体衬底，在器件表面处形成的至少一个可见光光电二极管和在器件表面处形成的至少一个3D光电二极管靠近所述至少一个可见光光电二极管。该装置还可以包括功能上耦合到至少一个3D光电二极管并定位成与电磁辐射相互作用的量子效率增强的红外光区域。在一个方面，量子效率增强红外光区域是位于器件表面处的纹理区域。

5. 发明申请

US20120313204A1 Process Module for Increasing the Response of Backside Illuminated Photosensitive Imagers and Associated Methods 有权
标题翻译：用于增加背面照射光敏成像器的响应的过程模块和相关方法
公开(公告)号：US20120313204A1
公开(公告)日：2012-12-13
申请号：US13493891
申请日：2012-06-11
申请人： Homayoon Haddad , Jeffrey McKee , Jutao Jiang , Drake Miller , Chintamani Palsule , Leonard Forbes
发明人： Homayoon Haddad , Jeffrey McKee , Jutao Jiang , Drake Miller , Chintamani Palsule , Leonard Forbes
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/14685 , H01L27/1462 , H01L27/14629 , H01L27/1464 , H01L27/14689 , H01L27/14692 , H01L31/0232 , H01L31/18
摘要： Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation where the textured region includes surface features sized and positioned to facilitate tuning to a preselected wavelength of light, and a dielectric region positioned between the textured region and the at least one junction. The dielectric region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.
摘要翻译：提供背面照明感光装置及相关方法。在一个方面，例如，背面照射的光敏成像器件可以包括具有形成至少一个结的多个掺杂区域的半导体衬底，耦合到半导体衬底并被定位成与电磁辐射相互作用的纹理区域，其中纹理区域包括表面特征尺寸和位置便于调谐到预选的波长的光，以及位于纹理化区域和至少一个结之间的电介质区域。电介质区域被定位成将至少一个结与纹理化区域隔离，并且半导体衬底和纹理化区域被定位成使得输入的电磁辐射在接触纹理区域之前穿过半导体衬底。另外，该装置包括耦合到半导体衬底以从至少一个结转移电信号的电转移元件。

6. 发明申请

US20110220971A1 PHOTOSENSITIVE IMAGING DEVICES AND ASSOCIATED METHODS 有权
标题翻译：感光成像装置及相关方法
公开(公告)号：US20110220971A1
公开(公告)日：2011-09-15
申请号：US13050557
申请日：2011-03-17
申请人： Homayoon Haddad , Jutao Jiang , Jeffrey McKee , Drake Miller , Chintamani Palsule , Leonard Forbes
发明人： Homayoon Haddad , Jutao Jiang , Jeffrey McKee , Drake Miller , Chintamani Palsule , Leonard Forbes
IPC分类号： H01L27/148 , H01L31/0236 , H01L31/0232 , H01L31/18 , H01L31/112
CPC分类号： H01L27/1464 , H01L27/14623 , H01L27/14625 , H01L27/14645 , H01L27/14685
摘要： Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and a passivation region positioned between the textured region and the at least one junction. The passivation region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.
摘要翻译：提供背面照明感光装置及相关方法。在一个方面，例如，背面照射的光敏成像器件可以包括具有形成至少一个结的多个掺杂区域的半导体衬底，耦合到半导体衬底并被定位成与电磁辐射相互作用的纹理化区域，以及位于在纹理化区域和至少一个结点之间。定位钝化区以将至少一个结与纹理化区域隔离，并且半导体衬底和纹理化区域被定位成使得输入的电磁辐射在接触纹理化区域之前穿过半导体衬底。另外，该装置包括耦合到半导体衬底以从至少一个结转移电信号的电转移元件。

7. 发明申请

US20120326008A1 PHOTODETECTING IMAGER DEVICES HAVING CORRELATED DOUBLE SAMPLING AND ASSOCIATED METHODS 有权
标题翻译：具有相关双重采样和相关方法的光电转换成像设备
公开(公告)号：US20120326008A1
公开(公告)日：2012-12-27
申请号：US13333537
申请日：2011-12-21
申请人： Jeffrey McKee , Jutao Jiang
发明人： Jeffrey McKee , Jutao Jiang
IPC分类号： H01L27/146 , H01L31/102
CPC分类号： H04N5/37452 , H01L27/14609 , H04N5/3559
摘要： Transistor pixel devices, imagers, and associated methods are provided. In one aspect, a transistor pixel device includes a photodiode coupled to a floating diffusion region (FD), a storage node (SN), and a power supply, wherein the FD is coupled between the photodiode and the power supply. The device also includes a first global transfer transistor coupled between the photodiode and the FD for gating between the photodiode and the FD and a second global transfer transistor coupled between the FD and the SN for gating between the FD and the SN. A global reset select transistor is coupled between the FD and the power supply, wherein an open state of the global reset select transistor prevents accumulation of electrical charge at the photodiodes. A source follower transistor is coupled to the FD and to the power supply, where the source follower is operable to receive electrical signal from the FD.
摘要翻译：提供晶体管像素器件，成像器和相关方法。在一个方面，晶体管像素器件包括耦合到浮动扩散区（FD），存储节点（SN）和电源的光电二极管，其中FD耦合在光电二极管和电源之间。该器件还包括耦合在光电二极管和FD之间的第一全局传输晶体管，用于在光电二极管和FD之间进行门控，以及耦合在FD和SN之间的第二全局传输晶体管，用于在FD和SN之间进行门控。全局复位选择晶体管耦合在FD和电源之间，其中全局复位选择晶体管的断开状态防止在光电二极管处的电荷累积。源极跟随器晶体管耦合到FD和电源，其中源极跟随器可操作以从FD接收电信号。

8. 发明授权

US08723094B2 Photodetecting imager devices having correlated double sampling and associated methods 有权
标题翻译：具有相关双重采样和相关方法的光检测成像仪设备
公开(公告)号：US08723094B2
公开(公告)日：2014-05-13
申请号：US13333537
申请日：2011-12-21
申请人： Jeffrey McKee , Jutao Jiang
发明人： Jeffrey McKee , Jutao Jiang
IPC分类号： H01L27/00
CPC分类号： H04N5/37452 , H01L27/14609 , H04N5/3559
摘要： Transistor pixel devices, imagers, and associated methods are provided. In one aspect, a transistor pixel device includes a photodiode coupled to a floating diffusion region (FD), a storage node (SN), and a power supply, wherein the FD is coupled between the photodiode and the power supply. The device also includes a first global transfer transistor coupled between the photodiode and the FD for gating between the photodiode and the FD and a second global transfer transistor coupled between the FD and the SN for gating between the FD and the SN. A global reset select transistor is coupled between the FD and the power supply, wherein an open state of the global reset select transistor prevents accumulation of electrical charge at the photodiodes. A source follower transistor is coupled to the FD and to the power supply, where the source follower is operable to receive electrical signal from the FD.
摘要翻译：提供晶体管像素器件，成像器和相关方法。在一个方面，晶体管像素器件包括耦合到浮动扩散区（FD），存储节点（SN）和电源的光电二极管，其中FD耦合在光电二极管和电源之间。该器件还包括耦合在光电二极管和FD之间的第一全局传输晶体管，用于在光电二极管和FD之间进行门控，以及耦合在FD和SN之间的第二全局传输晶体管，用于在FD和SN之间进行门控。全局复位选择晶体管耦合在FD和电源之间，其中全局复位选择晶体管的断开状态防止在光电二极管处的电荷累积。源极跟随器晶体管耦合到FD和电源，其中源极跟随器可操作以从FD接收电信号。

9. 发明授权

US08476681B2 Photosensitive imaging devices and associated methods 有权
标题翻译：感光成像设备及相关方法
公开(公告)号：US08476681B2
公开(公告)日：2013-07-02
申请号：US13050557
申请日：2011-03-17
申请人： Homayoon Haddad , Jutao Jiang , Jeffrey McKee , Drake Miller , Chintamani Palsule , Leonard Forbes
发明人： Homayoon Haddad , Jutao Jiang , Jeffrey McKee , Drake Miller , Chintamani Palsule , Leonard Forbes
IPC分类号： H01L27/148
CPC分类号： H01L27/1464 , H01L27/14623 , H01L27/14625 , H01L27/14645 , H01L27/14685
摘要： Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and a passivation region positioned between the textured region and the at least one junction. The passivation region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.
摘要翻译：提供背面照明感光装置及相关方法。在一个方面，例如，背面照射的光敏成像器件可以包括具有形成至少一个结的多个掺杂区域的半导体衬底，耦合到半导体衬底并被定位成与电磁辐射相互作用的纹理化区域，以及位于在纹理化区域和至少一个结点之间。定位钝化区以将至少一个结与纹理化区域隔离，并且半导体衬底和纹理化区域被定位成使得输入的电磁辐射在接触纹理化区域之前穿过半导体衬底。另外，该装置包括耦合到半导体衬底以从至少一个结转移电信号的电转移元件。

10. 发明授权

US09496308B2 Process module for increasing the response of backside illuminated photosensitive imagers and associated methods 有权
标题翻译：用于增加背面照射感光成像器的响应的过程模块及相关方法
公开(公告)号：US09496308B2
公开(公告)日：2016-11-15
申请号：US13493891
申请日：2012-06-11
申请人： Homayoon Haddad , Jeffrey McKee , Jutao Jiang , Drake Miller , Chintamani Palsule , Leonard Forbes
发明人： Homayoon Haddad , Jeffrey McKee , Jutao Jiang , Drake Miller , Chintamani Palsule , Leonard Forbes
IPC分类号： H01L27/00 , H01L27/146 , H01L31/0232 , H01L31/18
CPC分类号： H01L27/14685 , H01L27/1462 , H01L27/14629 , H01L27/1464 , H01L27/14689 , H01L27/14692 , H01L31/0232 , H01L31/18
摘要： Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation where the textured region includes surface features sized and positioned to facilitate tuning to a preselected wavelength of light, and a dielectric region positioned between the textured region and the at least one junction. The dielectric region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.
摘要翻译：提供背面照明感光装置及相关方法。在一个方面，例如，背面照射的光敏成像器件可以包括具有形成至少一个结的多个掺杂区域的半导体衬底，耦合到半导体衬底并被定位成与电磁辐射相互作用的纹理区域，其中纹理区域包括表面特征尺寸和位置便于调谐到预选的波长的光，以及位于纹理化区域和至少一个结之间的电介质区域。电介质区域被定位成将至少一个结与纹理化区域隔离，并且半导体衬底和纹理化区域被定位成使得输入的电磁辐射在接触纹理区域之前穿过半导体衬底。另外，该装置包括耦合到半导体衬底以从至少一个结转移电信号的电转移元件。

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