专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20060128757A1 Pyridine derivatives useful as cyclooxygenase inhibitor 审中-公开
标题翻译：用作环加氧酶抑制剂的吡啶衍生物
公开(公告)号：US20060128757A1
公开(公告)日：2006-06-15
申请号：US11348408
申请日：2006-02-07
申请人： Junya Ishida , Hirofumi Yamamoto , Nobukiyo Konishi , Masataka Morita , Katsuya Nakamura , Susumu Miyata , Takehiro Ochi , Yoshiaki Morita , Eiji Yoshimi , Kanae Kuroda
发明人： Junya Ishida , Hirofumi Yamamoto , Nobukiyo Konishi , Masataka Morita , Katsuya Nakamura , Susumu Miyata , Takehiro Ochi , Yoshiaki Morita , Eiji Yoshimi , Kanae Kuroda
IPC分类号： A61K31/444 , A61K31/4415 , A61K31/44 , C07D401/04
CPC分类号： C07D213/30 , C07D213/26 , C07D213/38 , C07D213/40 , C07D213/48 , C07D213/61 , C07D213/82 , C07D213/84 , C07D213/85
摘要： A compound of the formula (I): wherein R1 is hydrogen, halogen, carbamoyl, cyano, formyl, or lower alkyl optionally substituted with halogen, amino or a protected amino; R2 is hydrogen, halogen, cyano or lower alkoxy; R3 is phenyl or pyridyl, each of which is substituted with lower alkoxy; and R4 is lower alkoxy; provided that either R1 or R2 is hydrogen, then the other is other than hydrogen, or its salts, which are useful as a medicament.
摘要翻译：式（I）的化合物：其中R 1是氢，卤素，氨基甲酰基，氰基，甲酰基或任选被卤素，氨基或被保护的氨基取代的低级烷基; R 2是氢，卤素，氰基或低级烷氧基; R 3是苯基或吡啶基，各自被低级烷氧基取代; R 4是低级烷氧基; 条件是R 1或R 2 2都是氢，则另一个不是用作药物的氢或其盐。

2. 发明授权

US06335886B1 Semiconductor memory device including spare memory cell 失效
标题翻译：半导体存储器件包括备用存储单元
公开(公告)号：US06335886B1
公开(公告)日：2002-01-01
申请号：US09725149
申请日：2000-11-29
申请人： Takehiro Ochi , Hisao Kobashi
发明人： Takehiro Ochi , Hisao Kobashi
IPC分类号： G11C700
CPC分类号： G11C29/70 , G11C11/4087 , G11C29/785 , G11C29/83
摘要： A redundancy row decoder in a DRAM includes a plurality of N channel MOS transistors connected in series between one terminal of each fuse and a line of a ground potential, the plurality of N channel MOS transistors having their gates receiving a predecode signal allocated to a corresponding word line. As compared with a conventional case where only one N channel MOS transistor is connected between one terminal of each fuse and the line of the ground potential, leakage current flowing through each fuse is made smaller.
摘要翻译： DRAM中的冗余行解码器包括串联连接在每个熔丝的一个端子和地电位之间的多个N沟道MOS晶体管，其多个N沟道MOS晶体管的栅极接收分配给相应的字线。与在每个熔丝的一个端子和地电位之间仅连接一个N沟道MOS晶体管的常规情况相比，流过每个熔丝的漏电流更小。

3. 发明授权

US06469943B2 Switching circuit and semiconductor device 失效
标题翻译：开关电路和半导体器件
公开(公告)号：US06469943B2
公开(公告)日：2002-10-22
申请号：US09912537
申请日：2001-07-26
申请人： Takehiro Ochi
发明人： Takehiro Ochi
IPC分类号： G11C700
CPC分类号： G11C29/785 , G11C17/16
摘要： A switching circuit between a main circuit and a redundant circuit in a semiconductor device is disclosed. The redundant circuit replaces the main circuit by blowing a fuse. But a nullifying means can nullify blowing of the fuse, if needed. A switching element connected in parallel with the fuse and a control means enable nullification. The control means turn on the switching element to ascertain whether nullification is effective, and fix the nullification by blowing a fuse in the control means.
摘要翻译：公开了半导体器件中的主电路和冗余电路之间的切换电路。冗余电路通过吹保险丝来代替主电路。但是，如果需要，一个无效的方法可以使熔断器的熔断无效。与保险丝并联连接的开关元件和控制装置使得无效。控制装置打开开关元件以确定无效是否有效，并且通过在控制装置中吹保险丝来固定无效。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式