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    • 2. 发明授权
    • Optical recording media
    • 光记录媒体
    • US5498507A
    • 1996-03-12
    • US394817
    • 1995-02-27
    • Tokuhiko HandaRyo InabaSusumu HarataniJunji Tominaga
    • Tokuhiko HandaRyo InabaSusumu HarataniJunji Tominaga
    • B41M5/26G11B7/0055G11B7/006G11B7/24G11B7/243G11B7/254
    • G11B7/257G11B7/243G11B2007/24306G11B2007/24308G11B2007/24312G11B2007/24314G11B2007/24316G11B7/006G11B7/258G11B7/266Y10S430/146
    • In a phase change type of optical recording medium including on a substrate a lower dielectric layer, a recording layer, a first upper dielectric layer contiguous to said recording layer, a second upper dielectric layer and a reflective layer, the recording layer comprises a recording material containing an element A that represents silver and/or gold, an element B that represents antimony and/or bismuth, an element C that represents tellurium and/or selenium, an element indium, and an element M that represents at least one element selected from the group consisting of titanium, zirconium, hafnium, vanadium, niobium, tantalum, manganese, tungsten and molybdenum, with the atomic ratio of the elements in said recording material having the following formula:{(A.sub.a B.sub.b C.sub.1-a-b).sub.x (In.sub.0.5 C.sub.0.5).sub.y B.sub.1-x-y }.sub.1-z M.sub.zwherein 0.10.ltoreq.a.ltoreq.0.40, 0.10.ltoreq.b.ltoreq.0.40, 0.20.ltoreq.x.ltoreq.0.80, 0.01.ltoreq.y.ltoreq.0.60, and 0.001.ltoreq.z.ltoreq.0.20. The first upper dielectric layer contains at least one compound selected from the group consisting of aluminum nitride, silicone nitride and aluminum oxide. The second upper dielectric layer is made up of a material that has a thermal conductivity lower than that of said first upper dielectric layer.
    • 在包括在基底上的下介电层,记录层,与所述记录层邻接的第一上电介质层,第二上电介质层和反射层的相变型光记录介质中,所述记录层包括记录材料 含有表示银和/或金的元素A,表示锑和/或铋的元素B,表示碲和/或硒的元素C,元素铟和元素M,其表示选自以下的至少一种元素: 由钛,锆,铪,钒,铌,钽,锰,钨和钼组成的组,所述记录材料中的元素的原子比具有下式:{(AaBbC1-ab)x(In0.5C0。 5)yB1-xy} 1-zMz其中0.10≤i≤0.40,0.10≤b≤0.40,0.20≤x≤0.80,0.01≤y≤0.60, 和0.001≤z≤0.20。 第一上介电层包含至少一种选自氮化铝,氮化硅和氧化铝的化合物。 第二上介电层由热导率低于所述第一上电介质层的材料构成。
    • 10. 发明授权
    • Current sensor
    • 电流传感器
    • US08593134B2
    • 2013-11-26
    • US13042833
    • 2011-03-08
    • Susumu HarataniHitoshi YamaguchiMasahiro MiyazakiShigeru Shimura
    • Susumu HarataniHitoshi YamaguchiMasahiro MiyazakiShigeru Shimura
    • G01R15/20
    • G01R15/205B82Y25/00G01R33/093
    • A current sensor includes first to fourth magneto-resistive elements each having a resistance value; and a compensation current line applying a compensation magnetic field to the magneto-resistive elements. A bridge circuit is formed by the magneto-resistive elements. Resistance values of the first and third magneto-resistive elements change together in one increasing/decreasing direction. Resistance values of the second and fourth magneto-resistive elements change together in the other increasing/decreasing direction. The compensation current is generated by a potential difference between the first and second junctions in response to application of voltage between the third and fourth junctions. The compensation current line includes first to fourth line portions. Each line portion extends in the same direction as the extending direction of the magneto-resistive elements, overlaps the corresponding magneto-resistive elements, and. The current-to-be-detected is detected based on the compensation current.
    • 电流传感器包括各自具有电阻值的第一至第四磁阻元件; 以及向磁阻元件施加补偿磁场的补偿电流线。 桥接电路由磁阻元件形成。 第一和第三磁阻元件的电阻值在一个递减方向上一起变化。 第二和第四磁阻元件的电阻值在另一个增加/减小方向上一起变化。 响应于在第三和第四结之间的电压施加,补偿电流由第一和第二结之间的电位差产生。 补偿电流线包括第一至第四线部分。 每个线部分沿与磁阻元件的延伸方向相同的方向延伸,与相应的磁阻元件重叠。 基于补偿电流检测要检测的电流。