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    • 2. 发明授权
    • Pigment dispersants with modified copolymers
    • 具有改性共聚物的颜料分散剂
    • US08664324B2
    • 2014-03-04
    • US12999678
    • 2009-06-10
    • Junichi TanabeMamiko Takesue
    • Junichi TanabeMamiko Takesue
    • C09D153/00C08F283/01
    • C08F293/00C08F2/38C08F4/00C08F293/005C08L53/00C09D153/00C08L2666/02
    • The present invention pertains to salt modified copolymers wherein one of the monomer units contains a quaternized N-atom structure with a polar substituent. The invention further relates to the use of said copolymers as dispersant especially for color filters. The copolymer is made by controlled polymerization or by conventional polymerization and comprises at least one monomer (MAr) selected from unsaturated monomers out of the group of acrylates, methacrylates, acrylamides, methacrylamides, styrenic monomers, at least one monomer (MBs) selected from unsaturated monomers out of the group of acrylates, methacrylates, acrylamides, methacrylamides, styrenic monomers wherein the monomer MB has a quaternized N-atom structure with a polar substituent selected from polyether, polyamine, nitrile, amide, imine, imide, ester, ketone, nitrile, aldehyde, diketone, ketoester, ketoamide, carbonate, carbamate, carbamide, sulfoxide, sulfone, carboxylic acid, sulfonic acid, phosphoric acid groups; or carboxylic acid anion, sulfonic acid anion or phosphoric acid anion groups which is formed as betaine structure r denotes the total number of monomers MA within the structural element (MAr) and r is >5, preferred 10-1000, most preferred 10-500; s denotes the total number of monomers MB within the structural element (MBs) and s is >1, preferred 2-100, most preferred 2-50.
    • 本发明涉及盐改性共聚物,其中单体单元之一含有具有极性取代基的季铵化的N-原子结构。 本发明还涉及所述共聚物作为分散剂的用途,特别是用于滤色器。 共聚物通过受控聚合或通过常规聚合制备,并且包含至少一种选自丙烯酸酯,甲基丙烯酸酯,丙烯酰胺,甲基丙烯酰胺,苯乙烯类单体中的不饱和单体的单体(MAr),至少一种选自不饱和单体的单体(MB) 丙烯酸酯,甲基丙烯酸酯,丙烯酰胺,甲基丙烯酰胺,苯乙烯类单体中的单体,其中单体MB具有季铵化的N-原子结构,其具有选自聚醚,多胺,腈,酰胺,亚胺,酰亚胺,酯,酮,腈的极性取代基 ,醛,二酮,酮酯,酮酰胺,碳酸酯,氨基甲酸酯,脲,亚砜,砜,羧酸,磺酸,磷酸基团; 或羧酸阴离子,作为甜菜碱结构形成的磺酸阴离子或磷酸阴离子基团r表示结构元素(MAr)中单体MA的总数,r> 5,优选10-1000,最优选10-500 ; s表示结构单元(MB)中单体MB的总数,s表示> 1,优选2-100,最优选2-50。
    • 3. 发明授权
    • Oxime ester photoinitiators
    • 肟酯光引发剂
    • US08524425B2
    • 2013-09-03
    • US12598481
    • 2008-04-28
    • Akira MatsumotoJunichi TanabeHisatoshi KuraMasaki Ohwa
    • Akira MatsumotoJunichi TanabeHisatoshi KuraMasaki Ohwa
    • G02B5/20G03F7/031
    • C07D409/06B33Y70/00C07D209/86C07D335/16C07D405/12C07D409/14C07D417/12
    • Compounds of the formula (I) and (II) M1, M2 and M3 independently of one another are no bond, a direct bond, CO, O, S, SO, SO2 or NR14; provided that at least one of M1, M2 or M3 is a direct bond, CO, O, S, SO, SO2 or NR14; M4 is a direct bond, CR″3R″4, CS, O, S, SO, or SO2; Y is S or NR18; R1 for example is hydrogen, C3-C8cycloalkyl, phenyl or napthyl, both of which are optionally substituted; R2 for example is C1-C20alkyl; R″2 has one of the meanings given for R2; R3 and R4 are for example hydrogen, halogen, C1-C20alkyl; R′3, R′4, R″3 and R″4 independently of one another have one of the meanings given for R3 and R4; and R5 is for example hydrogen, halogen, C1-C20alkyl; provided that in the compounds of the formula (I) at least two oxime ester groups are present and provided that at least one specified substituent R2 or R″2 is present; exhibit an unexpectedly good performance in photopolymerization reactions.
    • 式(I)和(II)M1,M2和M3彼此独立的化合物不是键,直接键,CO,O,S,SO,SO 2或NR 14; 条件是M1,M2或M3中的至少一个是直接键,CO,O,S,SO,SO 2或NR 14; M4是直接键,CR''3R''4,CS,O,S,SO或SO2; Y为S或NR18; R 1例如是氢,C 3 -C 8环烷基,苯基或萘基,它们都是任选被取代的; R 2例如是C 1 -C 20烷基; R'2具有R2中给出的含义之一; R3和R4是例如氢,卤素,C1-C20烷基; R 3,R'4,R“3和R”4彼此独立地具有R3和R4给出的含义之一; R5是例如氢,卤素,C1-C20烷基; 条件是在式(I)的化合物中存在至少两个肟酯基团,条件是存在至少一个特定的取代基R 2或R“2; 在光聚合反应中表现出出人意料的良好性能。
    • 5. 发明授权
    • Method of manufacturing semiconductor device and substrate processing apparatus
    • 制造半导体器件和衬底处理设备的方法
    • US08293592B2
    • 2012-10-23
    • US12410836
    • 2009-03-25
    • Junichi Tanabe
    • Junichi Tanabe
    • H01L21/00
    • H01L21/02532H01L21/0262H01L21/02636H01L21/67109
    • A semiconductor device manufacturing method including: (a) loading into a chamber a substrate having at least an exposed silicon surface and an exposed surface of silicon oxide film or silicon nitride film on a substrate surface; (b) simultaneously supplying at least a first process gas containing silicon and a second process gas for etching into the chamber when the substrate inside the chamber is heated to a predetermined temperature; and (c) supplying into the chamber a third process gas having an etchability higher than the second process gas etchability. Steps (b) and (c) are performed at least once to selectively grow an epitaxial film on the exposed silicon surface of the substrate surface. A temperature of the substrate is maintained at the predetermined temperature from (b) to (c), and the temperature of the substrate is temporarily elevated above the predetermined temperature and then returned to the predetermined temperature in (c).
    • 一种半导体器件制造方法,包括:(a)将具有至少暴露的硅表面的衬底和在衬底表面上的氧化硅膜或氮化硅膜的暴露表面加载到腔室中; (b)当室内的基板被加热到预定温度时,同时供应至少含有硅的第一工艺气体和用于蚀刻的第二工艺气体; 和(c)向腔室供应具有高于第二工艺气体蚀刻性的蚀刻性的第三工艺气体。 执行步骤(b)和(c)至少一次以选择性地在衬底表面的暴露的硅表面上生长外延膜。 将基板的温度保持在(b)〜(c)的规定温度,将基板的温度暂时升高到规定温度以上,然后返回到(c)中的规定温度。
    • 8. 发明申请
    • METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS
    • 制造半导体器件和衬底加工设备的方法
    • US20090263971A1
    • 2009-10-22
    • US12410836
    • 2009-03-25
    • Junichi Tanabe
    • Junichi Tanabe
    • H01L21/465
    • H01L21/02532H01L21/0262H01L21/02636H01L21/67109
    • A method of manufacturing a semiconductor device comprises: (a) loading a substrate into a process chamber, wherein the substrate has at least a silicon exposure surface and an exposure surface of silicon oxide film or silicon nitride film on a substrate surface; (b) simultaneously supplying at least a first process gas containing silicon and a second process gas for etching into the process chamber under conditions that the substrate inside the process chamber is heated to a predetermined temperature; and (c) supplying a third process gas having a stronger etchability than the second process gas into the process chamber, wherein the operation (b) and the operation (c) are performed at least one or more times so that an epitaxial film is selectively grown on the silicon exposure surface of the substrate surface
    • 一种制造半导体器件的方法包括:(a)将衬底加载到处理室中,其中所述衬底至少具有硅暴露表面和在衬底表面上的氧化硅膜或氮化硅膜的暴露表面; (b)在处理室内的基板被加热到预定温度的条件下,同时向处理室中同时供给至少含有硅的第一工艺气体和第二工艺气体用于蚀刻; 以及(c)将具有比第二工艺气体更强的蚀刻性的第三工艺气体供应到处理室中,其中操作(b)和操作(c)至少执行一次或多次,使得外延膜选择性地 生长在衬底表面的硅暴露表面上
    • 9. 发明申请
    • COLOR FILTER COMPOSITION
    • 彩色滤光片组成
    • US20090186285A1
    • 2009-07-23
    • US12309089
    • 2007-07-02
    • Carsten SchellenbergClemens AuschraMasaki OhwaJunichi TanabeMamiko Takesue
    • Carsten SchellenbergClemens AuschraMasaki OhwaJunichi TanabeMamiko Takesue
    • G03F1/00G02B5/23
    • G03F7/0007C09B67/009
    • The invention relates to a color filter composition comprising a) a photoresist binder, b) a transparent pigment, c) optionally a solvent and/or optionally a photoinitiator or a photolatent catalyst, d) a dispersant which is a polymer or copolymer obtainable by a process comprising the steps of a1) polymerizing in a first step one or more ethylenically unsaturated monomers in the presence of at least one nitroxylether having the structural element wherein X represents a group having at least one carbon atom and is such that the free radical X derived from X is capable of initiating polymerization; or a2) polymerizing in a first step one or more ethylenically unsaturated monomers in the presence of at least one stable free nitroxyl radical and a free radical initiator; wherein at least one monomer used in the steps a1) or a2) is a C1-C6 alkyl or hydroxy C1-C6 alkyl ester of acrylic or methacrylic acid; and a second step b) comprising the modification of the polymer or copolymer prepared under a1) or a2) by a transesterification reaction, an amidation, hydrolysis or anhydride modification or a combination thereof, and optionally in addition by quaternization.
    • 本发明涉及一种滤色器组合物,其包含a)光致抗蚀剂粘合剂,b)透明颜料,c)任选的溶剂和/或任选的光引发剂或光引发剂催化剂,d)分散剂,其是可通过 方法包括以下步骤:a1)在至少一种具有结构元素的硝基醚的存在下,在第一步中聚合一种或多种烯属不饱和单体,其中X表示具有至少一个碳原子的基团,并且使得衍生自 从X能够引发聚合; 或a2)在至少一种稳定的游离硝酰基和自由基引发剂的存在下,在第一步中聚合一种或多种烯属不饱和单体; 其中在步骤a1)或a2)中使用的至少一种单体是丙烯酸或甲基丙烯酸的C 1 -C 6烷基或羟基C 1 -C 6烷基酯; 和第二步骤b)包括通过酯交换反应,酰胺化,水解或酸酐改性或其组合修饰在a1)或a2)下制备的聚合物或共聚物,以及任选地通过季铵化进行添加。