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    • 6. 发明授权
    • Method of fabricating a thin film transistor array
    • 制造薄膜晶体管阵列的方法
    • US4654117A
    • 1987-03-31
    • US839673
    • 1986-03-14
    • Shigeo AokiJunichi TamamuraYasuhiro Ukai
    • Shigeo AokiJunichi TamamuraYasuhiro Ukai
    • G09G3/36G02F1/133G02F1/1335G02F1/136G02F1/1362G02F1/1368G09F9/30H01L21/306B44C1/22C03C15/00C23F1/02
    • G02F1/1362G02F1/133514G02F1/1368G02F1/13454Y10S438/949
    • An array of thin film transistors is fabricated by forming a plurality of spaced closely adjacent metallic source and drain electrodes on an array area of a transparent substrate, forming semiconductor layers on the substrate between each adjacent pair of source and drain electrodes in overlapping relation to the edges of each such pair, covering the semiconductor layers with a gate insulation film that extends over substantially all of said array area, forming a transparent gate electrode layer over the gate insulation film, covering the transparent gate electrode layer with a photosensitive resin layer which is then exposed to light through the transparent substrate and transparent gate electrode layer with the metallic source and drain electrodes acting as masks, developing the photosensitive resin layer to remove portions thereof other than the exposed portions, and etching the transparent gate electrode with the remaining portions of the resin layer serving as masks thereby to form the gate electrodes of the thin film transistors in the array.
    • 通过在透明衬底的阵列区域上形成多个间隔紧密的金属源极和漏电极来制造薄膜晶体管阵列,在每个相邻的一对源电极和漏电极之间的衬底上形成半导体层,以与 每个这样的对的边缘覆盖半导体层,栅极绝缘膜在基本上所有的阵列区域上延伸,在栅极绝缘膜上形成透明栅电极层,用感光树脂层覆盖透明栅电极层,该感光树脂层是 然后通过透明基板和透明栅极电极层暴露于金属源极和漏极用作掩模,将感光性树脂层除去除了暴露部分之外的部分,并且将其余部分蚀刻到透明栅电极 树脂层用作掩模 m阵列中的薄膜晶体管的栅电极。