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    • 7. 发明申请
    • SEMICONDUCTOR MEMORY DEVICES
    • 半导体存储器件
    • US20140126265A1
    • 2014-05-08
    • US14055061
    • 2013-10-16
    • Jaekyu LEEChangkyu KIM
    • Jaekyu LEEChangkyu KIM
    • G11C5/06
    • G11C5/063G11C7/18G11C13/0002G11C2213/82H01L27/0207H01L27/228H01L27/2436H01L43/08H01L45/04H01L45/06H01L45/1233H01L45/143H01L45/144H01L45/146H01L45/147
    • Semiconductor memory devices include unit cells two-dimensionally arranged along rows and columns in one cell array block. The unit cells are classified into a plurality of cell subgroups, and each of the cell subgroups includes the unit cells constituting a plurality of the rows. Each of the unit cells includes a selection element and a data storage part. A word line is connected to gate electrodes of selection elements of the unit cells constituting each column. Bit lines are connected to data storage parts of the unit cells constituting the rows. A source line, parallel to the bit line, is electrically connected to source terminals of the selection elements of the unit cells in each cell subgroup. The source line is parallel to the bit line. A distance between the source line and the select bit line is equal to a distance between the bit lines adjacent to each other.
    • 半导体存储器件包括在一个单元阵列块中沿行和列二维排列的单位单元。 单元单元被分类为多个单元子组,并且每个单元子组包括构成多行的单元单元。 每个单位单元包括选择单元和数据存储单元。 字线连接到构成每列的单元电池的选择元件的栅电极。 位线连接到构成行的单位单元的数据存储部分。 平行于位线的源极线电连接到每个电池子组中的单元电池的选择元件的源极端子。 源极线与位线平行。 源极线和选择位线之间的距离等于彼此相邻的位线之间的距离。