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1. 发明申请

US20070128742A1 METHOD OF FORMING SILICON-ON-INSULATOR (SOI) SEMICONDUCTOR SUBSTRATE AND SOI SEMICONDUCTOR SUBSTRATE FORMED THEREBY 审中-公开
标题翻译：形成硅绝缘体（SOI）半导体衬底和SOI半导体衬底的方法
公开(公告)号：US20070128742A1
公开(公告)日：2007-06-07
申请号：US11673865
申请日：2007-02-12
申请人： Jung-Il Lee , Geum-Jong Bae , Ki-Chul Kim , Hwa-Sung Rhee , Sang-Su Kim
发明人： Jung-Il Lee , Geum-Jong Bae , Ki-Chul Kim , Hwa-Sung Rhee , Sang-Su Kim
IPC分类号： H01L21/66 , H01L21/76
CPC分类号： H01L21/76254 , H01L21/76259
摘要： A method of forming a silicon-on-insulator (SOI) semiconductor substrate includes implanting hydrogen ions into a support substrate to form a microbubble layer apart from a surface of the support substrate, forming an SOI layer on the microbubble layer, forming a diffusion barrier layer over the SOI layer, forming a buried oxide layer on a handle substrate, contacting the diffusion barrier layer with the buried oxide layer to be bonded, and annealing the bonded support and handle substrates to separate the support substrate from the SOI layer, wherein the diffusion barrier layer is formed by an insulating layer having a lower impurity diffusion coefficient as compared with the buried oxide layer.
摘要翻译：形成绝缘体上硅（SOI）半导体衬底的方法包括将氢离子注入到支撑衬底中以形成与支撑衬底的表面隔开的微泡层，在微泡层上形成SOI层，形成扩散阻挡层在SOI层上形成掩埋氧化物层，在接触衬底上形成掩埋氧化物层，使扩散阻挡层与要接合的掩埋氧化物层接触，并对接合的支撑体和处理衬底退火以将支撑衬底与SOI层分离，其中通过与掩埋氧化物层相比具有较低杂质扩散系数的绝缘层形成扩散阻挡层。

2. 发明授权

US07183172B2 Method of forming silicon-on-insulator (SOI) semiconductor substrate and SOI semiconductor substrate formed thereby 失效
标题翻译：形成绝缘体上硅（SOI）半导体衬底和由此形成的SOI半导体衬底的方法
公开(公告)号：US07183172B2
公开(公告)日：2007-02-27
申请号：US10397447
申请日：2003-03-26
申请人： Jung-Il Lee , Geum-Jong Bae , Ki-Chul Kim , Hwa-Sung Rhee , Sang-Su Kim
发明人： Jung-Il Lee , Geum-Jong Bae , Ki-Chul Kim , Hwa-Sung Rhee , Sang-Su Kim
IPC分类号： H01L21/76
CPC分类号： H01L21/76259 , H01L21/76254
摘要： A method of forming an SOI semiconductor substrate and the SOI semiconductor substrate formed thereby, is provided. The method includes forming sequentially buried oxide, diffusion barrier and SOI layers on a semiconductor substrate. The diffusion barrier layer is formed by an insulating layer having a lower impurity diffusion coefficient as compared with the buried oxide layer. The diffusion barrier layer serves to prevent impurities implanted into the SOI layer from being diffused into the buried oxide layer or the semiconductor substrate.
摘要翻译：提供了一种形成SOI半导体衬底的方法和由此形成的SOI半导体衬底。该方法包括在半导体衬底上顺序地形成掩埋氧化物，扩散阻挡层和SOI层。与掩埋氧化物层相比，扩散阻挡层由具有较低杂质扩散系数的绝缘层形成。扩散阻挡层用于防止注入到SOI层中的杂质扩散到掩埋氧化物层或半导体衬底中。

3. 发明申请

US20070117300A1 METHOD OF FORMING SILICON-ON-INSULATOR (SOI) SEMICONDUCTOR SUBSTRATE AND SOI SEMICONDUCTOR SUBSTRATE FORMED THEREBY 审中-公开
标题翻译：形成硅绝缘体（SOI）半导体衬底和SOI半导体衬底的方法
公开(公告)号：US20070117300A1
公开(公告)日：2007-05-24
申请号：US11623384
申请日：2007-01-16
申请人： Jung-Il Lee , Geum-Jong Bae , Ki-Chul Kim , Hwa-Sung Rhee , Sang-Su Kim
发明人： Jung-Il Lee , Geum-Jong Bae , Ki-Chul Kim , Hwa-Sung Rhee , Sang-Su Kim
IPC分类号： H01L21/8238 , H01L27/12
CPC分类号： H01L21/76259 , H01L21/76254
摘要： A silicon-on-insulator (SOI) semiconductor substrate includes a semiconductor substrate, a buried oxide layer formed on the semiconductor substrates an SOI layer formed on the buried oxide layer, and a diffusion barrier layer interposed between the buried oxide layer and the SOI layer, wherein the diffusion barrier layer is an insulating layer having a lower impurity diffusion coefficient as compared with the buried oxide layer.
摘要翻译：绝缘体上硅（SOI）半导体衬底包括半导体衬底，在半导体衬底上形成的掩埋氧化物层，形成在掩埋氧化物层上的SOI层，以及介于掩埋氧化物层和SOI层之间的扩散阻挡层其中所述扩散阻挡层是与所述掩埋氧化物层相比具有较低杂质扩散系数的绝缘层。

4. 发明授权

US06881650B2 Method for forming SOI substrate 有权
标题翻译： SOI衬底的形成方法
公开(公告)号：US06881650B2
公开(公告)日：2005-04-19
申请号：US10307351
申请日：2002-12-02
申请人： Jung-Il Lee , Kazuyuki Fujihara , Nae-In Lee , Geum-Jong Bae , Hwa-Sung Rhee , Sang-su Kim
发明人： Jung-Il Lee , Kazuyuki Fujihara , Nae-In Lee , Geum-Jong Bae , Hwa-Sung Rhee , Sang-su Kim
IPC分类号： H01L21/205 , H01L21/02 , H01L21/20 , H01L21/30 , H01L21/46 , H01L21/762 , H01L27/12
CPC分类号： H01L21/76254
摘要： A method for forming SOI substrates including a SOI layer containing germanium and a strained silicon layer disposed on the SOI layer, comprises forming a relaxed silicon-germanium layer on a first silicon substrate using an epitaxial growth method, and forming a porous silicon-germanium layer thereon. A silicon-germanium epitaxial layer is formed on the porous silicon-germanium layer, an oxide layer is formed on a second silicon substrate, the second silicon substrate is bonded where the oxide layer is formed to the first silicon substrate where the silicon-germanium epitaxial layer is formed. Layers are removed to expose the silicon-germanium epitaxial layer and a strained silicon epitaxial layer is formed thereon. The porous silicon-germanium layer prevents lattice defects of the relaxed silicon-germanium layer from transferring to the silicon-germanium epitaxial layer. Therefore, it is possible to form the silicon-germanium layer and the strained silicon layer of the SOI layer without defects.
摘要翻译：一种用于形成包括含有锗的SOI层和设置在SOI层上的应变硅层的SOI衬底的方法包括：使用外延生长方法在第一硅衬底上形成松弛的硅 - 锗层，并且形成多孔硅 - 锗层上。在多孔硅锗层上形成硅 - 锗外延层，在第二硅衬底上形成氧化物层，将形成氧化物层的第二硅衬底接合到第一硅衬底上，其中硅 - 锗外延形成层。去除层以暴露硅 - 锗外延层，并在其上形成应变硅外延层。多孔硅 - 锗层防止松散的硅 - 锗层的晶格缺陷转移到硅 - 锗外延层。因此，可以形成SOI层的硅 - 锗层和应变硅层，而没有缺陷。

5. 发明授权

US06716689B2 MOS transistor having a T-shaped gate electrode and method for fabricating the same 失效
公开(公告)号：US06716689B2
公开(公告)日：2004-04-06
申请号：US10274035
申请日：2002-10-21
申请人： Geum-Jong Bae , Nae-In Lee , Hwa-Sung Rhee , Sang-Su Kim , Jung-Il Lee
发明人： Geum-Jong Bae , Nae-In Lee , Hwa-Sung Rhee , Sang-Su Kim , Jung-Il Lee
IPC分类号： H01L21338
CPC分类号： H01L29/6653 , H01L21/28114 , H01L29/665 , H01L29/6656 , H01L29/7833
摘要： A MOS transistor having a T-shaped gate electrode and a method for fabricating the same are provided, wherein the MOS transistor includes a T-shaped gate electrode on a semiconductor substrate; an L-shaped lower spacer disposed at both sides of the gate electrode to cover a top surface of the semiconductor substrate; and low-, mid-, and high-concentration impurity regions formed in the semiconductor substrate of both sides of the gate electrode. The high-concentration impurity region is disposed in the semiconductor substrate next to the lower spacer and the mid-concentration impurity region is disposed between the high- and low-concentration impurity regions. A MOS transistor according to the present invention provides a decrease in a capacitance, a decrease in a channel length, and an increase in a cross-sectional area of the gate electrode. At the same time, the mid-concentration impurity region provides a decrease in a source/drain resistance Rsd.

6. 发明授权

US08451410B2 Array substrate for wide viewing angle liquid crystal display device and mehod of manufacturing the same 有权
标题翻译：用于宽视角液晶显示装置的阵列基板及其制造方法
公开(公告)号：US08451410B2
公开(公告)日：2013-05-28
申请号：US13167523
申请日：2011-06-23
申请人： Jeong-Oh Kim , Jong-Won Moon , Jung-Il Lee
发明人： Jeong-Oh Kim , Jong-Won Moon , Jung-Il Lee
IPC分类号： G02F1/1343
CPC分类号： G02F1/134363 , G02F2001/134318
摘要： An array substrate for a wide viewing angle liquid crystal display device includes a gate line on a substrate, a data line crossing the gate line to define a pixel region, a thin film transistor electrically connected to the gate and data lines, a pixel electrode in the pixel region and connected to a drain electrode of the thin film transistor, the pixel electrode including two parts and an opening portion therebetween, a first common electrode in the opening portion, the first common electrode disposed on a same layer as the pixel electrode, a passivation layer on the pixel electrode and the first common electrode, the passivation layer having a common contact hole exposing the first common electrode, and a second common electrode on the passivation layer and connected to the first common electrode through the common contact hole, the second common electrode including first openings corresponding to the pixel electrode and a second opening corresponding to the opening portion.
摘要翻译：广视角液晶显示装置的阵列基板包括基板上的栅极线，与栅极线交叉以限定像素区域的数据线，与栅极和数据线电连接的薄膜晶体管，像素电极所述像素区域并连接到所述薄膜晶体管的漏电极，所述像素电极包括两部分和其间的开口部分，所述开口部分中的第一公共电极，设置在与所述像素电极相同的层上的所述第一公共电极，在所述像素电极和所述第一公共电极上的钝化层，所述钝化层具有暴露所述第一公共电极的公共接触孔，以及在所述钝化层上的第二公共电极，并且通过所述公共接触孔连接到所述第一公共电极，第二公共电极包括对应于像素电极的第一开口和对应于开口部分的第二开口。

7. 发明申请

US20110138688A1 FILM SHEET FOR AREA FOCUSING OF SUN LIGHT AND GREENHOUSE PROVIDED WITH THE SAME 有权
标题翻译：适用于太阳光和温室的区域聚焦薄膜
公开(公告)号：US20110138688A1
公开(公告)日：2011-06-16
申请号：US12962724
申请日：2010-12-08
申请人： Seong-Il KIM , Won-Jun Choi , Il-Ki Han , Jung-Il Lee
发明人： Seong-Il KIM , Won-Jun Choi , Il-Ki Han , Jung-Il Lee
IPC分类号： A01G9/14 , G02B27/12
CPC分类号： A01G9/243 , A01G9/1438 , F24S23/31 , G02B5/045 , Y02A40/252 , Y02A40/266 , Y02E10/43 , Y02P60/124
摘要： A film sheet for area-focusing of sunlight and a greenhouse provided with the same are provided. A film sheet includes i) a film having a rectangular shape, and ii) a plurality of prism assemblies formed on one surface of the film to extend in one direction. At least one prism assembly of the plurality of prism assemblies includes i) at least one first prism unit including a plurality of first prisms with slanted angles that are substantially the same as each other, and ii) at least one second prism unit neighboring the first prism unit and including a plurality of second prisms with slanted angles that are substantially the same as each other. The width of the first prism unit is substantially the same as the width of the second prism unit and a slanted angle of one first prism among the plurality of first prisms is different from a slanted angle of one second prism among the plurality of second prisms, and light entering the prism assembly is configured to be area-focused.
摘要翻译：提供了一种用于阳光区域聚焦的薄膜片和设有该阳光的温室。膜片包括i）具有矩形形状的膜，以及ii）形成在膜的一个表面上以在一个方向上延伸的多个棱镜组件。所述多个棱镜组件中的至少一个棱镜组件包括：i）至少一个第一棱镜单元，其包括具有彼此基本相同的倾斜角度的多个第一棱镜，以及ii）与第一棱镜单元相邻的至少一个第二棱镜单元棱镜单元，并且包括具有彼此基本相同的倾斜角度的多个第二棱镜。第一棱镜单元的宽度与第二棱镜单元的宽度基本相同，并且多个第一棱镜中的一个第一棱镜的倾斜角度与多个第二棱镜中的一个第二棱镜的倾斜角度不同，并且进入棱镜组件的光被配置为区域聚焦。

8. 发明授权

US07795057B2 Liquid crystal display device and fabrication method thereof 有权
标题翻译：液晶显示装置及其制作方法
公开(公告)号：US07795057B2
公开(公告)日：2010-09-14
申请号：US11635639
申请日：2006-12-08
申请人： Myoung Su Yang , Joon-Young Yang , Jung-Il Lee
发明人： Myoung Su Yang , Joon-Young Yang , Jung-Il Lee
IPC分类号： H01L21/00
CPC分类号： G02F1/13439 , G02F1/1362
摘要： A liquid crystal display (LCD) device and its fabrication method includes providing a substrate divided into pixel part and pad parts; forming a gate electrode and a gate line at the pixel part through a first masking process; forming a first insulation film; forming an active pattern and source and drain electrodes at an upper portion of the gate electrode of the pixel part and forming a data line substantially crossing the gate line to define a pixel region through a second masking process; forming a pixel electrode directly electrically connected with the drain electrode at the pixel region of the pixel part through a third masking process; and attaching first and second substrates. A pixel electrode is formed to directly electrically connect with a drain electrode by selectively etching a transparent conductive film without forming a contact hole.
摘要翻译：液晶显示（LCD）装置及其制造方法包括：提供分为像素部分和焊盘部分的基板; 通过第一掩蔽处理在像素部分处形成栅电极和栅极线; 形成第一绝缘膜; 在像素部分的栅电极的上部形成有源图案和源电极和漏电极，并形成基本上与栅极线交叉的数据线，以通过第二掩蔽处理限定像素区域; 通过第三掩蔽处理形成与像素部分的像素区域处的漏电极直接电连接的像素电极; 以及附接第一和第二基板。通过选择性地蚀刻透明导电膜而不形成接触孔，形成像素电极，直接与漏极电连接。

9. 发明申请

US20100009478A1 IPS MODE LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR FABRICATING THEREOF 有权
标题翻译： IPS模式液晶显示装置及其制造方法
公开(公告)号：US20100009478A1
公开(公告)日：2010-01-14
申请号：US12561981
申请日：2009-09-17
申请人： Joon-Young YANG , Jung-Il Lee
发明人： Joon-Young YANG , Jung-Il Lee
IPC分类号： H01L21/77 , G02F1/13
CPC分类号： G02F1/134363 , G02F2001/136231
摘要： An IPS mode LCD device and a method for fabricating the same are disclosed. A switching device is formed at each unit pixel and then a passivation layer is formed thereon. A first concave pattern and a second concave pattern at each unit pixel by using one mask are formed, and a common electrode is formed in the first concave pattern and a pixel electrode is formed in the second concave pattern. Accordingly, the entire fabrication process is simplified.
摘要翻译：公开了IPS模式LCD装置及其制造方法。在每个单位像素处形成开关装置，然后在其上形成钝化层。形成通过使用一个掩模在每个单位像素处的第一凹形图案和第二凹形图案，并且在第一凹形图案中形成公共电极，并且在第二凹形图案中形成像素电极。因此，整个制造过程被简化。

10. 发明授权

US07563655B2 Method of fabricating the liquid crystal display device 有权
标题翻译：制造液晶显示装置的方法
公开(公告)号：US07563655B2
公开(公告)日：2009-07-21
申请号：US11475025
申请日：2006-06-27
申请人： Jung-Il Lee
发明人： Jung-Il Lee
IPC分类号： H01L21/00
CPC分类号： H01L27/1288 , H01L27/1214
摘要： The present invention provides a liquid crystal display device and a method of fabricating the same capable of reducing the number of mask processes. The liquid crystal display device and the method of fabricating the sane includes: forming a gate electrode and a common electrode on a substrate; forming a gate insulating layer, an active layer, and source/drain electrodes on the substrate including the gate electrode; forming a passivation layer on the entire substrate; forming a first photosensitive layer pattern on the passivation layer; selectively removing the passivation layer using the photosensitive layer pattern as a mask to form a plurality of holes; forming a conductive layer on the first photosensitive layer pattern including the plurality of holes; forming a second photosensitive layer on the conductive layer; selectively removing the photosensitive layer to expose the conductive layer; and selectively removing the exposed conductive layer portion, the remaining second photosensitive layer and the first photosensitive layer pattern to form a pixel electrode.
摘要翻译：本发明提供了能够减少掩模处理次数的液晶显示装置及其制造方法。液晶显示装置及其制造方法包括：在基板上形成栅电极和公共电极; 在包括所述栅电极的所述基板上形成栅极绝缘层，有源层和源极/漏极电极; 在整个基板上形成钝化层; 在钝化层上形成第一感光层图案; 使用感光层图案作为掩模选择性地去除钝化层以形成多个孔; 在包括所述多个孔的所述第一感光层图案上形成导电层; 在导电层上形成第二感光层; 选择性地去除感光层以暴露导电层; 并且选择性地去除暴露的导电层部分，剩余的第二感光层和第一感光层图案以形成像素电极。

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