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1. 发明申请

US20050022741A1 Chemical vapor deposition apparatus and method of forming thin layer using same 审中-公开
标题翻译：化学气相沉积装置及使用其形成薄层的方法
公开(公告)号：US20050022741A1
公开(公告)日：2005-02-03
申请号：US10890959
申请日：2004-07-12
申请人： Jung-Hun Seo , Young-Wook Park , Jae-Jong Han
发明人： Jung-Hun Seo , Young-Wook Park , Jae-Jong Han
IPC分类号： H01L21/205 , C23C16/00 , C23C16/02 , C23C16/06 , C23C16/458 , C23C16/46 , H01L21/285 , H01L21/3205
CPC分类号： H01L21/32051 , C23C16/0272 , C23C16/06 , C23C16/4586 , C23C16/46 , C23C16/466 , H01L21/28556
摘要： In one embodiment, a chemical vapor deposition (CVD) apparatus comprising a plurality of backside gas (BSG) passages that pass through a heater table that controls a temperature of a plurality of local areas on a wafer and a method of forming a thin layer using the CVD apparatus are provided. The heater table comprises a wafer supporting area divided into a plurality of local areas that correspond to the local areas of the wafer. Each of the BSG passages has a BSG outlet that supplies the BSG, heated by a heater, to the local areas. Flow controllers control the flow through each of the BSG passages, thereby controlling the temperature of local areas.
摘要翻译：在一个实施方案中，化学气相沉积（CVD）装置包括多个背面气体（BSG）通道，其通过加热台，该加热器台控制晶片上的多个局部区域的温度，以及使用提供CVD装置。加热器台包括分为对应于晶片的局部区域的多个局部区域的晶片支撑区域。每个BSG通道具有BSG出口，其将由加热器加热的BSG供应到局部区域。流量控制器控制通过每个BSG通道的流量，从而控制局部区域的温度。

2. 发明申请

US20060128127A1 Method of depositing a metal compound layer and apparatus for depositing a metal compound layer 审中-公开
标题翻译：沉积金属化合物层的方法和沉积金属化合物层的装置
公开(公告)号：US20060128127A1
公开(公告)日：2006-06-15
申请号：US11290648
申请日：2005-12-01
申请人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong , Kyung-Bum Koo , Eun-Taeck Lee
发明人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong , Kyung-Bum Koo , Eun-Taeck Lee
IPC分类号： H01L21/20
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/45523 , C23C16/45561 , C23C16/45565 , C23C16/45574
摘要： In a method and an apparatus for depositing a metal compound layer, a first source gas and a second source gas may be provided onto a substrate to deposit a first metal compound layer on the substrate. The first source gas may include a metal and halogen elements, and the second source gas may include a first material capable of being reacted with the metal and a second material capable of being reacted with the halogen element. The first and the second source gases may be provided at a first flow rate ratio. A second metal compound layer may be deposited on the first metal compound layer by providing the first and the second source gases with a second flow rate ratio different from the first flow rate ratio. The apparatus may include a process chamber configured to receive a substrate, a gas supply system, and a flow rate control device.
摘要翻译：在用于沉积金属化合物层的方法和装置中，可以将第一源气体和第二源气体提供到衬底上以在衬底上沉积第一金属化合物层。第一源气体可以包括金属和卤素元素，并且第二源气体可以包括能够与金属反应的第一材料和能够与卤素元素反应的第二材料。第一和第二源气体可以以第一流量比提供。可以通过使第一和第二源气体具有与第一流量比不同的第二流量比，将第二金属化合物层沉积在第一金属化合物层上。该装置可以包括被配置为接收基板，气体供应系统和流量控制装置的处理室。

3. 发明授权

US07902090B2 Method of forming a layer on a semiconductor substrate 失效
标题翻译：在半导体衬底上形成层的方法
公开(公告)号：US07902090B2
公开(公告)日：2011-03-08
申请号：US12212466
申请日：2008-09-17
申请人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong
发明人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong
IPC分类号： H01L21/336
CPC分类号： C23C16/45544 , C23C16/34 , C23C16/45565 , C23C16/45589
摘要： In a method of forming a thin layer for a semiconductor device through an ALD process and a CVD process in the same chamber, a semiconductor substrate is introduced into a processing chamber, and an interval between a showerhead and the substrate is adjusted to a first gap distance. A first layer is formed on the substrate at a first temperature through an ALD process. The interval between the showerhead and the substrate is additionally adjusted to a second gap distance, and a second layer is formed on the first layer at a second temperature through a CVD process. Accordingly, the thin layer has good current characteristics, and the manufacturing throughput of a semiconductor device is improved.
摘要翻译：在通过同一腔室中的ALD工艺和CVD工艺形成用于半导体器件的薄层的方法中，将半导体衬底引入到处理室中，将喷头与衬底之间的间隔调整到第一间隙距离。通过ALD工艺在第一温度下在衬底上形成第一层。喷淋头和基板之间的间隔被额外地调整到第二间隙距离，并且通过CVD工艺在第二温度下在第一层上形成第二层。因此，薄层具有良好的电流特性，提高了半导体器件的制造能力。

4. 发明申请

US20060054087A1 Process chamber for manufacturing seminconductor devices 审中-公开
标题翻译：用于制造半导体器件的过程室
公开(公告)号：US20060054087A1
公开(公告)日：2006-03-16
申请号：US11000941
申请日：2004-12-02
申请人： Jung-Hun Seo , Yun-Ho Choi , Young-Wook Park , Jeong-Tae Kim
发明人： Jung-Hun Seo , Yun-Ho Choi , Young-Wook Park , Jeong-Tae Kim
IPC分类号： C23C16/00
CPC分类号： C23C16/4401
摘要： The present invention is directed to a plasma process chamber capable of maintaining a high vacuum in the idle state. The present invention maintains a high vacuum in the idle state and prevents a contamination of the wafer transferred into the process chamber.
摘要翻译：本发明涉及能够在空闲状态下保持高真空的等离子体处理室。本发明在怠速状态下保持高真空并且防止转移到处理室中的晶片的污染。

5. 发明申请

US20060000411A1 Method of forming a layer on a semiconductor substrate and apparatus for performing the same 失效
标题翻译：在半导体基板上形成层的方法及其制造方法
公开(公告)号：US20060000411A1
公开(公告)日：2006-01-05
申请号：US11154110
申请日：2005-06-15
申请人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong
发明人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/34 , C23C16/45565 , C23C16/45589
摘要： In a method of forming a thin layer for a semiconductor device through an ALD process and a CVD process in the same chamber, a semiconductor substrate is introduced into a processing chamber, and an interval between a showerhead and the substrate is adjusted to a first gap distance. A first layer is formed on the substrate at a first temperature through an ALD process. The interval between the showerhead and the substrate is additionally adjusted to a second gap distance, and a second layer is formed on the first layer at a second temperature through a CVD process. Accordingly, the thin layer has good current characteristics, and the manufacturing throughput of a semiconductor device is improved.
摘要翻译：在通过同一腔室中的ALD工艺和CVD工艺形成用于半导体器件的薄层的方法中，将半导体衬底引入到处理室中，将喷头与衬底之间的间隔调整到第一间隙距离。通过ALD工艺在第一温度下在衬底上形成第一层。喷淋头和基板之间的间隔被额外地调整到第二间隙距离，并且通过CVD工艺在第二温度下在第一层上形成第二层。因此，薄层具有良好的电流特性，提高了半导体器件的制造能力。

6. 发明申请

US20070042132A1 Method of forming plasma and method of forming a layer using the same 审中-公开
标题翻译：形成等离子体的方法和使用其形成层的方法
公开(公告)号：US20070042132A1
公开(公告)日：2007-02-22
申请号：US11450455
申请日：2006-06-12
申请人： Jung-Hun Seo , Young-Wook Park , JIn-Gi Hong , Kyung-Bum Koo , Eun-Taeck Lee , Yun-Ho Choi
发明人： Jung-Hun Seo , Young-Wook Park , JIn-Gi Hong , Kyung-Bum Koo , Eun-Taeck Lee , Yun-Ho Choi
IPC分类号： H05H1/24 , C03C15/00
CPC分类号： C23C16/5096 , C23C16/14 , C23C16/34 , H01L21/28556 , H01L21/76841 , H01L21/76856
摘要： A method of forming plasma used in a process of manufacturing a semiconductor device and a method of forming a layer for a semiconductor device using the plasma are disclosed. The plasma forming method includes forming a plasma region in a sealed space by supplying a plasma source gas into the sealed space at a first flow rate and maintaining the plasma region by supplying a plasma maintenance gas into the sealed space at a second flow rate higher than the first flow rate. The plasma source gas includes a first gas having a first atomic weight, and the plasma maintenance gas includes a second gas having a second atomic weight lower than the first atomic weight. The plasma source gas includes argon and the plasma maintenance gas includes helium. The method may further include forming the layer on a wafer by supplying a source gas into the sealed space.
摘要翻译：公开了一种在制造半导体器件的工艺中使用的形成等离子体的方法以及使用该等离子体形成半导体器件层的方法。等离子体形成方法包括在密封空间中形成等离子体区域，通过以等于第一流量的方式将密封空间中的等离子体源气体以第一流量提供，并通过以等于或等于第一流量。等离子体源气体包括具有第一原子量的第一气体，等离子体维持气体包括具有比第一原子量低的第二原子量的第二气体。等离子体源气体包括氩气，等离子体维持气体包括氦气。该方法还可以包括通过将源气体供应到密封空间中在晶片上形成该层。

7. 发明申请

US20050150462A1 Lift pin for used in semiconductor manufacturing facilities and method of manufacturing the same 审中-公开
标题翻译：用于半导体制造设备的升降销及其制造方法
公开(公告)号：US20050150462A1
公开(公告)日：2005-07-14
申请号：US11030808
申请日：2005-01-05
申请人： Jung-Hun Seo , Yun-Ho Choi , Young-Wook Park , Jeong-Tae Kim
发明人： Jung-Hun Seo , Yun-Ho Choi , Young-Wook Park , Jeong-Tae Kim
IPC分类号： H01L21/205 , C23C16/00 , C23C16/44 , C23C16/458 , H01L21/687
CPC分类号： C23C16/4586 , C23C16/4404 , C23C16/4581 , H01L21/68742 , Y10T29/49
摘要： Provided are a lift pin capable of preventing aluminum from depositing on the lift pin when depositing a metallic layer on a wafer through chemical vapor deposition. a system using the lift pin, and a method of manufacturing the same. The lift pin is made of stainless steel and is oxidized at a predetermined temperature for a predetermined time, such that the lift pin is not deposited with aluminum during a CVD process. Since the CVD vacuum processing chamber utilizes the heater and the lift pin which are made of oxidized SUS material, aluminum does not deposit on the heater and the lift. Therefore, when the lift pin is lowered, the lift pin is not lowered by its own weight, thereby preventing a wafer from being broken. Also, the lift pin is prevented from being ruptured by a robot moving in and out of an opening of the CVD vacuum processing chamber.
摘要翻译：提供了一种提升销，其能够通过化学气相沉积在金属层上沉积金属层时能够防止铝沉积在升降销上。使用升降销的系统及其制造方法。提升销由不锈钢制成，并在预定温度下氧化预定时间，使得在CVD工艺期间提升销不被铝沉积。由于CVD真空处理室利用由氧化的SUS材料制成的加热器和提升销，铝不会沉积在加热器和电梯上。因此，当升降销降低时，提升销不会因其自重而下降，从而防止晶片破裂。此外，防止升降销被机械人移入和移出CVD真空处理室的开口而破裂。

8. 发明申请

US20060024964A1 Method and apparatus of forming thin film using atomic layer deposition 审中-公开
标题翻译：使用原子层沉积法形成薄膜的方法和装置
公开(公告)号：US20060024964A1
公开(公告)日：2006-02-02
申请号：US11154045
申请日：2005-06-15
申请人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong
发明人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong
IPC分类号： H01L21/44 , C23C16/00
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/452 , C23C16/45544
摘要： The method of forming a TiN thin film using an atomic layer deposition (ALD) method includes thermally decomposing TiCl4; introducing a pyrolyzed product of the TiCl4 into the chamber; supplying a first purge gas into the chamber; supplying a reactant gas into the chamber, thereby forming a TiN thin film; and supplying a second purge gas into the chamber. The apparatus of forming a TiN thin film includes a gas conduit having an entrance line into which a source gas, TiCl4 is introduced; a heater installed around the gas conduit and thermally decomposing the introduced source gas, TiCl4, in advance to make a secondary source gas; and a chamber being connected to the gas conduit and having a reaction room in which the TiN thin film is formed by the reaction of the secondary source gas and NH3 as a reactant gas. Therefore, a TiN thin film growth rate can be improved.
摘要翻译：使用原子层沉积（ALD）法形成TiN薄膜的方法包括：热分解TiCl 4; 将TiCl 4的热解产物引入室中; 将第一吹扫气体供应到所述室中; 将反应气体供应到室中，由此形成TiN薄膜; 以及将第二吹扫气体供应到所述室中。形成TiN薄膜的装置包括具有入口管的气体导管，引入源气体TiCl 4; 安装在气体管道周围的加热器，并预先将引入的源气体TiCl 4分解，以形成二次源气体; 以及与气体导管连接的室，具有反应室，在该反应室中，作为反应气体的二次气体和NH 3 3反应形成TiN薄膜。因此，可以提高TiN薄膜的生长速度。

9. 发明申请

US20060021578A1 Chemical vapor deposition apparatus 审中-公开
标题翻译：化学气相沉积装置
公开(公告)号：US20060021578A1
公开(公告)日：2006-02-02
申请号：US11155206
申请日：2005-06-16
申请人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong
发明人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong
IPC分类号： C23C16/00
CPC分类号： C23C16/4401 , H01L21/67109 , H01L21/67748
摘要： A chemical vapor deposition apparatus and method are provided. The apparatus includes a heater disposed on a bottom of a process chamber for heating a wafer laid on the heater. A shower head is disposed above the heater for injecting a reaction gas. The apparatus comprises a shutter chamber provided at an outer side of the process chamber. A transfer robot is installed in the shutter chamber having a blade at a front end thereof. The transfer robot is reciprocated within the process chamber by driving device. A shutter disk is laid on the blade of the transfer robot. The shutter disk is located on the heater of the process chamber by the transfer robot to prevent radiant heat generated from the heater from being transferred to the shower head.
摘要翻译：提供了一种化学气相沉积设备和方法。该设备包括设置在处理室底部的加热器的加热器的加热器。淋浴头设置在加热器上方，用于注入反应气体。该装置包括设置在处理室外侧的活门室。传送机器人安装在具有在其前端的叶片的快门室中。传送机器人通过驱动装置在处理室内往复运动。快门盘放置在传送机器人的刀片上。快门盘通过传送机器人位于处理室的加热器上，以防止加热器产生的辐射热被传送到淋浴喷头。

10. 发明授权

US07439192B2 Method of forming a layer on a semiconductor substrate 失效
标题翻译：在半导体衬底上形成层的方法
公开(公告)号：US07439192B2
公开(公告)日：2008-10-21
申请号：US11154110
申请日：2005-06-15
申请人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong
发明人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong
IPC分类号： H01L21/31
CPC分类号： C23C16/45544 , C23C16/34 , C23C16/45565 , C23C16/45589
摘要： In a method of forming a thin layer for a semiconductor device through an ALD process and a CVD process in the same chamber, a semiconductor substrate is introduced into a processing chamber, and an interval between a showerhead and the substrate is adjusted to a first gap distance. A first layer is formed on the substrate at a first temperature through an ALD process. The interval between the showerhead and the substrate is additionally adjuted to a second gap distance, and a second layer is formed on the first layer at a second temperature through a CVD process. Accordingly, the thin layer has good current characteristics, and the manufacturing throughput of a semiconductor device is improved.
摘要翻译：在通过同一腔室中的ALD工艺和CVD工艺形成用于半导体器件的薄层的方法中，将半导体衬底引入到处理室中，将喷头与衬底之间的间隔调整到第一间隙距离。通过ALD工艺在第一温度下在衬底上形成第一层。喷淋头和基板之间的间隔被额外地调整到第二间隙距离，并且通过CVD工艺在第二温度下在第一层上形成第二层。因此，薄层具有良好的电流特性，提高了半导体器件的制造能力。

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