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    • 5. 发明授权
    • Vertical memory devices including indium and/or gallium channel doping
    • 垂直存储器件包括铟和/或镓通道掺杂
    • US08497555B2
    • 2013-07-30
    • US13298728
    • 2011-11-17
    • Jin-Gyun KimKi-Hyun HwangSung-Hae LeeJi-Hoon Choi
    • Jin-Gyun KimKi-Hyun HwangSung-Hae LeeJi-Hoon Choi
    • H01L29/792G11C11/40
    • H01L29/7926H01L27/11582H01L29/1041H01L29/167H01L29/7923
    • A vertical memory device may include a substrate, a first selection line on the substrate, a plurality of word lines on the first selection line, a second selection line on the plurality of word lines, and a semiconductor channel. The first selection line may be between the plurality of word lines and the substrate, and the plurality of word lines may be between the first and second selection lines. Moreover, the first and second selection lines and the plurality of word lines may be spaced apart in a direction perpendicular with respect to a surface of the substrate. The semiconductor channel may extend away from the surface of the substrate adjacent sidewalls of the first and second selection lines and the plurality of word lines. In addition, portions of the semiconductor channel adjacent the second selection line may be doped with indium and/or gallium. Related methods are also discussed.
    • 垂直存储器件可以包括衬底,衬底上的第一选择线,第一选择线上的多个字线,多个字线上的第二选择线,以及半导体沟道。 第一选择线可以在多个字线和衬底之间,并且多个字线可以在第一和第二选择线之间。 此外,第一选择线和第二选择线和多个字线可以在与衬底的表面垂直的方向上间隔开。 半导体通道可以延伸离开衬底的与第一和第二选择线和多个字线的侧壁相邻的表面。 此外,与第二选择线相邻的半导体通道的部分可以掺杂铟和/或镓。 还讨论了相关方法。