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1. 发明授权

US07981784B2 Methods of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07981784B2
公开(公告)日：2011-07-19
申请号：US12381175
申请日：2009-03-09
申请人： Dong-Suk Shin , Ki-Chul Kim , Jung-Deog Lee
发明人： Dong-Suk Shin , Ki-Chul Kim , Jung-Deog Lee
IPC分类号： H01L21/00
CPC分类号： H01L21/823807 , H01L21/823814 , H01L21/823864 , H01L29/7843
摘要： Isolation regions are formed on a substrate to define an active region. A gate electrode is formed on the active region. A spacer structure is formed on a sidewall of the gate electrode. A gate silicide layer is formed on the gate electrode and a source/drain silicide layer is formed on the active region adjacent to the gate electrode. An upper portion of the gate silicide layer and a portion of the spacer structure are simultaneously removed to form a spacer structure pattern and a gate silicide layer pattern. A stress layer is formed to cover the gate electrode and spacer structure pattern.
摘要翻译：隔离区形成在衬底上以限定有源区。在有源区上形成栅电极。间隔结构形成在栅电极的侧壁上。在栅电极上形成栅极硅化物层，并且在与栅电极相邻的有源区上形成源极/漏极硅化物层。栅极硅化物层的上部和间隔物结构的一部分被同时去除以形成间隔物结构图案和栅极硅化物层图案。形成应力层以覆盖栅电极和间隔结构图案。

2. 发明申请

US20090227082A1 Methods of manufcturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20090227082A1
公开(公告)日：2009-09-10
申请号：US12381175
申请日：2009-03-09
申请人： Dong-Suk Shin , Ki-Chul Kim , Jung-Deog Lee
发明人： Dong-Suk Shin , Ki-Chul Kim , Jung-Deog Lee
IPC分类号： H01L21/76
CPC分类号： H01L21/823807 , H01L21/823814 , H01L21/823864 , H01L29/7843
摘要： Isolation regions are formed on a substrate to define an active region. A gate electrode is formed on the active region. A spacer structure is formed on a sidewall of the gate electrode. A gate silicide layer is formed on the gate electrode and a source/drain silicide layer is formed on the active region adjacent to the gate electrode. An upper portion of the gate silicide layer and a portion of the spacer structure are simultaneously removed to form a spacer structure pattern and a gate silicide layer pattern. A stress layer is formed to cover the gate electrode and spacer structure pattern.
摘要翻译：隔离区形成在衬底上以限定有源区。在有源区上形成栅电极。间隔结构形成在栅电极的侧壁上。在栅电极上形成栅极硅化物层，并且在与栅电极相邻的有源区上形成源极/漏极硅化物层。栅极硅化物层的上部和间隔物结构的一部分被同时去除以形成间隔物结构图案和栅极硅化物层图案。形成应力层以覆盖栅电极和间隔结构图案。

3. 发明授权

US07939452B2 Method of manufacturing transistor having metal silicide and method of manufacturing a semiconductor device using the same 有权
标题翻译：制造具有金属硅化物的晶体管的方法和使用其制造半导体器件的方法
公开(公告)号：US07939452B2
公开(公告)日：2011-05-10
申请号：US12320604
申请日：2009-01-30
申请人： Jung-Deog Lee , Ki-Chul Kim
发明人： Jung-Deog Lee , Ki-Chul Kim
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L29/6653 , H01L21/28052 , H01L21/28114 , H01L21/32137 , H01L29/42376 , H01L29/4933 , H01L29/66507 , H01L29/6659 , H01L29/7833
摘要： In a method of manufacturing a transistor and a method of manufacturing a semiconductor device using the same, the method may include forming a preliminary metal silicide pattern on a single-crystalline silicon substrate and on a polysilicon pattern, and partially etching the preliminary metal silicide pattern to form a first metal silicide pattern on the substrate and a second metal silicide pattern on the polysilicon pattern, the second metal silicide pattern having a line width the same as or smaller than that of the polysilicon pattern. The method may include the transistor having no metal silicide residue on the spacer. Accordingly, an operation failure due to the residue may be prevented or reduced.
摘要翻译：在制造晶体管的方法和使用其制造半导体器件的方法中，该方法可以包括在单晶硅衬底和多晶硅图案上形成初步金属硅化物图案，并且部分蚀刻初步金属硅化物图案在衬底上形成第一金属硅化物图案，在多晶硅图案上形成第二金属硅化物图案，第二金属硅化物图案的线宽与多晶硅图案的线宽相同或更小。该方法可以包括在间隔物上没有金属硅化物残留物的晶体管。因此，可以防止或减少由残留物引起的操作故障。

4. 发明申请

US20090203182A1 Method of manufacturing transistor having metal silicide and method of manufacturing a semiconductor device using the same 有权
标题翻译：制造具有金属硅化物的晶体管的方法和使用其制造半导体器件的方法
公开(公告)号：US20090203182A1
公开(公告)日：2009-08-13
申请号：US12320604
申请日：2009-01-30
申请人： Jung-Deog Lee , Ki-Chul Kim
发明人： Jung-Deog Lee , Ki-Chul Kim
IPC分类号： H01L21/265 , H01L21/336 , H01L21/322
CPC分类号： H01L29/6653 , H01L21/28052 , H01L21/28114 , H01L21/32137 , H01L29/42376 , H01L29/4933 , H01L29/66507 , H01L29/6659 , H01L29/7833
摘要： In a method of manufacturing a transistor and a method of manufacturing a semiconductor device using the same, the method may include forming a preliminary metal silicide pattern on a single-crystalline silicon substrate and on a polysilicon pattern, and partially etching the preliminary metal silicide pattern to form a first metal silicide pattern on the substrate and a second metal silicide pattern on the polysilicon pattern, the second metal silicide pattern having a line width the same as or smaller than that of the polysilicon pattern. The method may include the transistor having no metal silicide residue on the spacer. Accordingly, an operation failure due to the residue may be prevented or reduced.
摘要翻译：在制造晶体管的方法和使用其制造半导体器件的方法中，该方法可以包括在单晶硅衬底和多晶硅图案上形成初步金属硅化物图案，并且部分蚀刻初步金属硅化物图案在衬底上形成第一金属硅化物图案，在多晶硅图案上形成第二金属硅化物图案，第二金属硅化物图案的线宽与多晶硅图案的线宽相同或更小。该方法可以包括在间隔物上没有金属硅化物残留物的晶体管。因此，可以防止或减少由残留物引起的操作故障。

5. 发明申请

US20080113517A1 METHODS OF FABRICATING SEMICONDUCTOR DEVICES INCLUDING SELECTIVELY REACTING REACTANT GASES 审中-公开
标题翻译：制备包含选择性反应性气体的半导体器件的方法
公开(公告)号：US20080113517A1
公开(公告)日：2008-05-15
申请号：US11757642
申请日：2007-06-04
申请人： Ki-Chul Kim , Jung-Deog Lee
发明人： Ki-Chul Kim , Jung-Deog Lee
IPC分类号： H01L21/302
CPC分类号： H01L21/0273 , H01L21/3086
摘要： A method of fabricating semiconductor devices with improved critical dimension (CD) uniformity is provided. The methods include forming photoresist patterns on an etching target layer, forming polymer layers on photoresist patterns on an etching target layer by selectively reacting a reactant gas with the photoresist patterns to provide different thicknesses of the polymer layers according to the position of the photoresist patterns, and etching the etching target layer using the photoresist patterns and the polymer layers as an etch mask.
摘要翻译：提供了一种制造具有改进的临界尺寸（CD）均匀性的半导体器件的方法。所述方法包括在蚀刻目标层上形成光致抗蚀剂图案，通过选择性地使反应物气体与光致抗蚀剂图案反应，根据光致抗蚀剂图案的位置提供不同厚度的聚合物层，在蚀刻目标层上的光刻胶图案上形成聚合物层，并使用光致抗蚀剂图案和聚合物层作为蚀刻掩模蚀刻蚀刻目标层。

6. 发明申请

US20090085125A1 MOS transistor and CMOS transistor having strained channel epi layer and methods of fabricating the transistors 审中-公开
标题翻译：具有应变通道外延层的MOS晶体管和CMOS晶体管以及制造晶体管的方法
公开(公告)号：US20090085125A1
公开(公告)日：2009-04-02
申请号：US12285044
申请日：2008-09-29
申请人： Ki-Chul Kim , Hong-jae Shin , Moon-han Park , Hwa-sung Rhee , Jung-deog Lee
发明人： Ki-Chul Kim , Hong-jae Shin , Moon-han Park , Hwa-sung Rhee , Jung-deog Lee
IPC分类号： H01L27/092 , H01L29/94
CPC分类号： H01L21/823807 , H01L21/823814 , H01L29/1054 , H01L29/165 , H01L29/665 , H01L29/6659 , H01L29/66636 , H01L29/66651 , H01L29/7833 , H01L29/7834 , H01L29/7848
摘要： Provided are a metal oxide semiconductor (MOS) transistor and a complementary MOS (CMOS) transistor each having a strained channel epi layer, and methods of fabricating the transistors. The MOS transistor may include at least one active region defined by an isolation structure formed in a substrate. At least one channel trench may be formed in a part of the at least one active region. At least one strained channel epi layer may be in the at least one channel trench. At least one gate electrode may be aligned on the at least one strained channel epi layer. Sources/drains may be arranged in the at least one active region along both sides of the at least one strained channel epi layer.
摘要翻译：提供了具有应变通道外延层的金属氧化物半导体（MOS）晶体管和互补MOS（CMOS）晶体管，以及制造晶体管的方法。 MOS晶体管可以包括由形成在衬底中的隔离结构限定的至少一个有源区。至少一个通道沟槽可以形成在至少一个有源区域的一部分中。至少一个应变通道外延层可以在至少一个沟道沟槽中。至少一个栅极可以在至少一个应变通道外延层上对准。源/排水口可以布置在沿着至少一个应变通道外延层的两侧的至少一个有源区域中。

7. 发明授权

US08321968B2 Self-generating bidet 有权
标题翻译：自发坐浴盆
公开(公告)号：US08321968B2
公开(公告)日：2012-12-04
申请号：US13086974
申请日：2011-04-14
申请人： Man-Uk Park , Sung-Worl Jin , Young-Sang Yun , Ji-Hye Jeong , In-Seok Seo , Ki-Chul Kim , Joung-Ho Son
发明人： Man-Uk Park , Sung-Worl Jin , Young-Sang Yun , Ji-Hye Jeong , In-Seok Seo , Ki-Chul Kim , Joung-Ho Son
IPC分类号： A47K3/022
CPC分类号： E03D9/08
摘要： There is provided a self-generating bidet that can perform power-generation using water supplied to the bidet or a water tank. The self-generating bidet, injecting water through a nozzle part, includes a water inlet into which water is introduced; a generator generating power through the water introduced by the water inlet; a charging unit storing electricity generated from the generator; and a nozzle passage part provided between the generator and the nozzle part to supply the water passing through the generator to the nozzle part. The self-generating bidet further includes a controller controlling the generator to be driven by opening a passage of the nozzle passage part in order to allow the water to be discharged through the nozzle part when a voltage of the charging unit is lower than a predetermined reference voltage.
摘要翻译：提供了可以使用供给到坐浴盆或水箱的水进行发电的自发坐浴盆。自发生的坐浴盆通过喷嘴部分注入水，包括引入水的进水口; 通过由入水口引入的水发电的发电机; 存储从发电机产生的电的充电单元; 以及喷嘴通道部分，设置在发电机和喷嘴部分之间，以将通过发生器的水供应到喷嘴部分。自发坐浴盆还包括控制发电机的控制器，其通过打开喷嘴通道部分的通道来驱动，以便当充电单元的电压低于预定参考值时允许水通过喷嘴部件排出电压。

8. 发明授权

US07722926B2 Organometallic compounds and methods of forming thin films including the use of the same 有权
标题翻译：有机金属化合物和形成薄膜的方法包括使用它们
公开(公告)号：US07722926B2
公开(公告)日：2010-05-25
申请号：US11460485
申请日：2006-07-27
申请人： Kyu-Ho Cho , Seung-Ho Yoo , Byung-Soo Kim , Jae-Sun Jung , Han-Jin Lim , Ki-Chul Kim , Jae-Soon Lim
发明人： Kyu-Ho Cho , Seung-Ho Yoo , Byung-Soo Kim , Jae-Sun Jung , Han-Jin Lim , Ki-Chul Kim , Jae-Soon Lim
IPC分类号： C23C16/00
CPC分类号： C23C16/40 , C07C217/08 , C23C16/403 , C23C16/45525 , C23C16/45553
摘要： The present invention provides organometallic compounds and methods of forming thin films including using the same. The organometallic compounds include a metal and a ligand linked to the metal. The ligand can be represented by the following formula (1): wherein R1 and R2 are each independently hydrogen or an alkyl group. The thin films may be applied to semiconductor structures such as a gate insulation layer of a gate structure and a dielectric layer of a capacitor.
摘要翻译：本发明提供有机金属化合物和形成薄膜的方法，包括使用它们。有机金属化合物包括与金属连接的金属和配体。配体可以由下式（1）表示：其中R 1和R 2各自独立地为氢或烷基。薄膜可以应用于诸如栅极结构的栅极绝缘层和电容器的电介质层的半导体结构。

9. 发明授权

US07684435B2 Base station system for mobile communication 有权
标题翻译：用于移动通信的基站系统
公开(公告)号：US07684435B2
公开(公告)日：2010-03-23
申请号：US10459542
申请日：2003-06-12
申请人： Ki-Chul Kim , Sung-Jun Baik
发明人： Ki-Chul Kim , Sung-Jun Baik
IPC分类号： H04J3/16 , H04J3/22 , H04B1/38 , H04J3/24 , H04M1/00
CPC分类号： H04W92/12 , H04W88/085
摘要： A base station system for mobile communication between a mobile terminal and a base station controller, the base station system utilizing a digital modem unit for receiving a signal to be transmitted to the mobile terminal from the base station controller, framing the received signal according to a frame format for transmission different than an Ethernet specified data format, the frame format being a predetermined remote RF (radio frequency) unit frame, the digital modem unit transmitting a plurality of the remote RF unit frames in series over an Ethernet using twisted pair cable, at least one remote RF unit hub receiving the remote RF unit frames transmitted by the digital modem unit and distributing the received remote RF unit frames to a plurality of remote RF units via the Ethernet using twisted pair cable, and the plurality of remote RF units producing a deframed signal by deframing the remote RF unit frames received from the remote RF unit hub, modulating the deframed signal to an RF signal, and transmitting the RF signal to the mobile terminal, wherein the remote RF unit frames are divided into a traffic frame for use in transmitting traffic data, which is transmitted and received by the mobile terminal and a control frame for use in transmitting a control address and control data, the control address differentiating the plurality of remote RF units from one another, the control data containing a command to control operation and functions of the plurality of remote RF units.
摘要翻译：一种用于移动终端和基站控制器之间的移动通信的基站系统，所述基站系统利用数字调制解调器单元从基站控制器接收要发送到移动终端的信号，根据用于传输的帧格式不同于以太网指定数据格式，帧格式是预定的远程射频（射频）单元帧，数字调制解调器单元使用双绞线通过以太网串行发送多个远程射频单元帧，至少一个远程RF单元集线器接收由数字调制解调器单元发送的远程RF单元帧，并且经由以太网使用双绞线将所接收的远程RF单元帧分发到多个远程RF单元，并且所述多个远程RF单元产生通过解除从远程RF单元集线器接收的远程RF单元帧来解调去帧信号的失真信号 RF信号，并且将RF信号发送到移动终端，其中远程RF单元帧被划分为用于发送由移动终端发送和接收的业务数据的业务帧和用于发送的控制帧控制地址和控制数据，所述控制地址将所述多个远程RF单元彼此区分开，所述控制数据包含用于控制所述多个远程RF单元的操作和功能的命令。

10. 发明授权

US07273822B2 Methods and apparatus for forming thin films for semiconductor devices 有权
标题翻译：用于形成半导体器件薄膜的方法和装置
公开(公告)号：US07273822B2
公开(公告)日：2007-09-25
申请号：US11038324
申请日：2005-01-19
申请人： Jae-Hyun Yeo , Young-Wook Park , Ki-Chul Kim , Jae-Jong Han
发明人： Jae-Hyun Yeo , Young-Wook Park , Ki-Chul Kim , Jae-Jong Han
IPC分类号： H01L21/31
CPC分类号： C23C16/44 , H01L21/28562 , H01L21/3141 , H01L21/31604 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/31691
摘要： Methods and apparatus are provided for forming thin films for semiconductor devices, which enable supplying and removing reactants containing constituent elements of a thin film to be formed, by preheating and supplying a process gas and a purging gas at a predetermined temperature in forming the thin film on a substrate. For example, a method for forming a thin film includes supplying a first reactant to a chamber to chemically adsorb the first reactant onto a substrate, the first reactant being bubbled by a first gas that is preheated, purging the chamber to remove residues on the substrate having the first reactant chemically adsorbed, and forming the thin film by a means of chemical displacement by supplying a second reactant to the chamber to chemically adsorb the second reactant onto the substrate.
摘要翻译：提供了用于形成用于半导体器件的薄膜的方法和装置，其能够通过在预定温度下预热和提供处理气体和净化气体来形成薄膜来提供和除去含有待形成的薄膜的构成元素的反应物在基板上。例如，用于形成薄膜的方法包括将第一反应物供应到室以化学吸附第一反应物到基底上，第一反应物被预热的第一气体鼓泡，清洗室以除去基底上的残留物使所述第一反应物被化学吸附，并且通过向所述室供应第二反应物以化学吸附所述第二反应物到所述基底上，通过化学位移形成所述薄膜。

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