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1. 发明申请

US20050279995A1 Composition for preparing organic insulating film and organic insulating film prepared from the same 审中-公开
标题翻译：用于制备有机绝缘膜和由其制备的有机绝缘膜的组合物
公开(公告)号：US20050279995A1
公开(公告)日：2005-12-22
申请号：US11007352
申请日：2004-12-09
申请人： Jung Shin , Tae Lee , Sang Lee , Hyung Park
发明人： Jung Shin , Tae Lee , Sang Lee , Hyung Park
IPC分类号： H01L29/08 , H01L51/05
CPC分类号： H01L51/052 , C08L63/00 , G03F7/027 , G03F7/038 , H01L51/0052 , C08L2666/02
摘要： A composition for preparing an organic insulating film. The composition includes a functional group-containing monomer, an initiator generating an acid or a radical upon light irradiation or heating, and a linear polymer. Further, an organic insulating film prepared from the composition. Since the organic insulating film has a crosslinked structure, it exhibits solvent resistance in subsequent processes. Further, when the organic insulating film is used to fabricate a transistor, it can improve the electrical properties of the transistor.
摘要翻译：一种制备有机绝缘膜的组合物。该组合物包含含官能团的单体，在光照射或加热时产生酸或自由基的引发剂和线性聚合物。此外，由组合物制备的有机绝缘膜。由于有机绝缘膜具有交联结构，因此在随后的工艺中具有耐溶剂性。此外，当有机绝缘膜用于制造晶体管时，其可以改善晶体管的电性能。

2. 发明申请

US20060006380A1 Composition for forming organic insulating film and method for forming pattern of organic insulating film using the same 失效
标题翻译：用于形成有机绝缘膜的组合物和使用其形成有机绝缘膜的图案的方法
公开(公告)号：US20060006380A1
公开(公告)日：2006-01-12
申请号：US11156489
申请日：2005-06-21
申请人： Jung Shin , Tae Lee , Bon Koo , Bang Lee , Sang Lee
发明人： Jung Shin , Tae Lee , Bon Koo , Bang Lee , Sang Lee
IPC分类号： H01L29/08
CPC分类号： H01L21/31133 , H01L21/0274 , H01L51/052
摘要： A photo-patternable composition for forming an organic insulating film which includes (i) a functional group-containing monomer, (ii) an initiator generating an acid or a radical upon light irradiation, and (iii) an organic or inorganic polymer. Further disclosed is a method for forming a pattern of an organic insulating film using the composition. Since an organic insulating film can be simply patterned without involving any photoresist process, the overall procedure is simplified and eventually an organic thin film transistor with high charge carrier mobility can be fabricated by all wet processes.
摘要翻译：一种用于形成有机绝缘膜的光可图案组合物，其包含（i）含官能团的单体，（ii）在光照射时产生酸或自由基的引发剂，和（iii）有机或无机聚合物。还公开了使用该组合物形成有机绝缘膜的图案的方法。由于有机绝缘膜可以简单地构图而不涉及任何光致抗蚀剂工艺，所以整个工艺被简化，并且最终可以通过所有湿法制造具有高电荷载流子迁移率的有机薄膜晶体管。

3. 发明申请

US20060124228A1 Apparatus and method for manufacturing copper clad laminate with improved peel strength 审中-公开
标题翻译：具有提高剥离强度的覆铜层压板的制造方法
公开(公告)号：US20060124228A1
公开(公告)日：2006-06-15
申请号：US11297831
申请日：2005-12-07
申请人： Sang Lee , Joon Shin , Hyung Park , Geum Yun
发明人： Sang Lee , Joon Shin , Hyung Park , Geum Yun
IPC分类号： B29C65/02 , B32B27/00 , B29D31/00
CPC分类号： B32B15/08 , B32B15/20 , B32B27/281 , B32B37/0038 , B32B37/203 , B32B2037/243 , B32B2038/168 , B32B2250/02 , B32B2255/06 , B32B2255/26 , B32B2274/00 , B32B2305/55 , B32B2307/31 , B32B2307/546 , B32B2307/5825 , B32B2309/02 , B32B2311/12 , B32B2457/08 , H05K3/022 , H05K3/386 , H05K2201/0141 , H05K2201/0358 , H05K2203/0759 , H05K2203/1545 , Y10T156/1007
摘要： The present invention relates to an apparatus and method for manufacturing a copper clad laminate, which can achieve a substantial improvement in the peel strength between a thermoplastic liquid crystal polymer and a copper foil. The apparatus comprises: a coating means for thinly coating the surface of a copper foil with a thermoplastic liquid crystal polymer solution; a solvent removal means for drying the coated liquid crystal polymer solution to remove the solvent of the coated solution; and a thermal pressing means for laminating and thermally pressing a thermoplastic liquid crystal polymer film onto the copper foil using heating rolls so as to make a copper clad laminate.
摘要翻译：本发明涉及一种用于制造覆铜层压板的装置和方法，其可以实现热塑性液晶聚合物和铜箔之间的剥离强度的显着提高。该装置包括：用热塑性液晶聚合物溶液薄涂铜表面的涂层装置; 用于干燥涂覆的液晶聚合物溶液以除去涂布溶液的溶剂的溶剂去除装置; 以及热压装置，用于使用加热辊将热塑性液晶聚合物膜层压并热压到铜箔上，以制成覆铜层压板。

4. 发明申请

US20050148186A1 Slurry composition with high planarity and CMP process of dielectric film using the same 失效
标题翻译：具有高平坦度的浆料组合物和使用其的介电膜的CMP工艺
公开(公告)号：US20050148186A1
公开(公告)日：2005-07-07
申请号：US10999263
申请日：2004-11-30
申请人： Jong Jung , Sang Lee , Hyung Park
发明人： Jong Jung , Sang Lee , Hyung Park
IPC分类号： H01L21/304 , C09G1/02 , H01L21/3105 , H01L21/768 , H01L21/44 , H01L21/302 , H01L21/461
CPC分类号： H01L21/76819 , C09G1/02 , H01L21/31053
摘要： Disclosed herein are a CMP slurry composition with high-planarity and a CMP process for polishing a dielectric film using the same. More specifically, a CMP slurry composition with high-planarity includes a carbon compound having tens of thousands of carboxyl groups and having a molecular weight ranging from hundreds of thousands to millions, an abrasive, and water. A CMP process for polishing a dielectric film utilizes the disclosed slurry composition. The slurry composition enables complete and overall planarization of the dielectric film by polishing the part of the film having a higher step difference through CMP process. Accordingly, the disclosed slurry composition is useful for the CMP process of all semiconductor devices including those having ultrafine patterns.
摘要翻译：本文公开了具有高平面性的CMP浆料组合物和使用其的用于抛光电介质膜的CMP工艺。更具体地说，具有高平面度的CMP浆料组合物包括具有数万个羧基并且分子量范围从数十万到数百万的碳化合物，研磨剂和水。用于抛光电介质膜的CMP工艺利用所公开的浆料组合物。浆料组合物通过CMP工艺研磨具有较高阶梯差的薄膜的部分，能够使电介质薄膜完全和全面平坦化。因此，所公开的浆料组合物对于包括具有超细图案的半导体器件的所有半导体器件的CMP工艺是有用的。

5. 发明申请

US20050142867A1 Method for forming polysilicon plug of semiconductor device 有权
标题翻译：用于形成半导体器件的多晶硅插塞的方法
公开(公告)号：US20050142867A1
公开(公告)日：2005-06-30
申请号：US10879220
申请日：2004-06-30
申请人： Hyung Park , Min Lee , Sang Lee , Hyun Sohn
发明人： Hyung Park , Min Lee , Sang Lee , Hyun Sohn
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/336 , H01L21/44 , H01L21/4763 , H01L21/60 , H01L21/768
CPC分类号： H01L21/76897 , H01L21/7684
摘要： Disclosed is a method for forming a polysilicon plug of a semiconductor device. The method comprises the steps of: forming a stacked pattern of a wordline and a hard mask film on a semiconductor substrate comprising a cell region and a peripheral circuit region; forming a spacer on a sidewall of the stacked pattern; forming an interlayer insulating film on the semiconductor substrate; polishing the interlayer insulating film via a CMP process using the hard mask film as a polishing barrier film; forming a barrier film on the semiconductor substrate including the interlayer insulating film; selectively etching the barrier film and the interlayer insulating film to form a landing plug contact hole; depositing a polysilicon film filling the landing plug contact hole on the semiconductor substrate; blanket-etching the polysilicon film using the barrier film as an etching barrier film; and polishing the polysilicon film and the barrier film using the hard mask film as a polishing barrier film to form a polysilicon plug.
摘要翻译：公开了一种用于形成半导体器件的多晶硅插塞的方法。该方法包括以下步骤：在包括单元区域和外围电路区域的半导体衬底上形成字线和硬掩模膜的堆叠图案; 在所述堆叠图案的侧壁上形成间隔物; 在半导体衬底上形成层间绝缘膜; 通过使用硬掩模膜作为抛光阻挡膜的CMP工艺来研磨层间绝缘膜; 在包括层间绝缘膜的半导体衬底上形成阻挡膜; 选择性地蚀刻阻挡膜和层间绝缘膜以形成着陆塞接触孔; 在所述半导体衬底上沉积填充所述着地插头接触孔的多晶硅膜; 使用阻挡膜作为蚀刻阻挡膜对多晶硅膜进行绝缘蚀刻; 并使用硬掩模膜作为抛光阻挡膜研磨多晶硅膜和阻挡膜以形成多晶硅插塞。

6. 发明申请

US20050095834A1 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20050095834A1
公开(公告)日：2005-05-05
申请号：US10875052
申请日：2004-06-22
申请人： Sang Lee , Jong Shin , Hyung Park
发明人： Sang Lee , Jong Shin , Hyung Park
IPC分类号： H01L21/283 , H01L21/304 , H01L21/44 , H01L21/4763 , H01L21/60 , H01L21/768 , H01L21/822 , H01L21/8242
CPC分类号： H01L21/76897 , H01L21/7684 , H01L27/10855 , H01L27/10873 , H01L27/10888
摘要： Disclosed is a method of manufacturing a semiconductor device. The method includes the steps of forming gates on a substrate, forming junction areas on a surface of the substrate, forming a first BPSG layer on a resultant structure of the substrate, performing a first CVD process for the first BPSG layer, forming a second BPSG layer on the first BPSG layer, forming a landing plug contact, depositing a polysilicon layer on a resultant structure of the substrate, and performing a second CMP process for the polysilicon layer, the second BPSG layer and the nitride hard mask. The CMP processes are carried by using acid slurry having a high polishing selectivity with respect to the nitride layer, so a step difference between the cell region and the peripheral region is removed, thereby simplifying the semiconductor manufacturing process and removing a dishing phenomenon.
摘要翻译：公开了半导体器件的制造方法。该方法包括以下步骤：在衬底上形成栅极，在衬底的表面上形成接合区域，在衬底的所得结构上形成第一BPSG层，对第一BPSG层执行第一CVD工艺，形成第二BPSG 在第一BPSG层上形成着色插头接触，在所得衬底的所得结构上沉积多晶硅层，以及对多晶硅层，第二BPSG层和氮化物硬掩模执行第二CMP工艺。通过使用相对于氮化物层具有高抛光选择性的酸性浆料来进行CMP处理，从而消除了单元区域和外围区域之间的阶跃差异，从而简化了半导体制造工艺并消除了凹陷现象。

7. 发明申请

US20070129473A1 Organic insulator composition, organic insulating film having the same, organic thin film transistor having the same and electronic device having the same and methods of forming the same 有权
标题翻译：有机绝缘体组合物，具有该有机绝缘体组合物的有机绝缘膜，具有该有机绝缘体组合物的有机薄膜晶体管和具有该有机绝缘体组合物的电子器件及其形成方法
公开(公告)号：US20070129473A1
公开(公告)日：2007-06-07
申请号：US11481843
申请日：2006-07-07
申请人： Jung Shin , Eun Lee , Eun Jeong , Joo Kim , Hyun Moon , Sang Lee
发明人： Jung Shin , Eun Lee , Eun Jeong , Joo Kim , Hyun Moon , Sang Lee
IPC分类号： C04B41/50 , B60C1/00
CPC分类号： H01L51/052 , H01L21/02126 , H01L21/02175 , H01L21/3122 , H01L51/0036 , H01L51/0055 , Y10T428/31663
摘要： Example embodiments of the present invention relate to an organic insulator composition, an organic insulating film having the organic insulator composition, an organic thin film transistor having the organic insulating film, an electronic device having the organic thin film transistor and methods of forming the same. Other example embodiments of the present invention relate to an organic insulator composition including a fluorinated silane compound that may be used to improve the charge carrier mobility and hysteresis of an organic thin film transistor. An organic insulator composition including a fluorinated silane compound and an organic thin film transistor using the same is provided. The hysteresis and physical properties, e.g., threshold voltage and/or charge carrier mobility, of the organic thin film transistor may be improved by the use of the organic insulator composition. The organic thin film transistor may be effectively used in the manufacture of a variety of electronic devices including liquid crystal displays (LCDs) and/or photovoltaic devices.
摘要翻译：本发明的实施例涉及有机绝缘体组合物，具有有机绝缘体组合物的有机绝缘膜，具有有机绝缘膜的有机薄膜晶体管，具有有机薄膜晶体管的电子器件及其形成方法。本发明的其它示例性实施方案涉及包含可用于改善有机薄膜晶体管的载流子迁移率和滞后的氟化硅烷化合物的有机绝缘体组合物。提供了包含氟化硅烷化合物和使用其的有机薄膜晶体管的有机绝缘体组合物。可以通过使用有机绝缘体组合物来改善有机薄膜晶体管的滞后和物理性质，例如阈值电压和/或电荷载流子迁移率。有机薄膜晶体管可以有效地用于制造包括液晶显示器（LCD）和/或光伏器件的各种电子器件。

8. 发明申请

US20060006379A1 Organic semiconductor copolymers containing oligothiophene and n-type heteroaromatic units 有权
标题翻译：含有低聚噻吩和n型杂芳族单元的有机半导体共聚物
公开(公告)号：US20060006379A1
公开(公告)日：2006-01-12
申请号：US11073691
申请日：2005-03-08
申请人： Bang Lee , Kook Han , Jung Shin , Sang Lee , Eun Jeong
发明人： Bang Lee , Kook Han , Jung Shin , Sang Lee , Eun Jeong
IPC分类号： H01L29/08 , C08G75/00
CPC分类号： H01L51/0043 , H01L51/0036 , H01L51/0512 , Y10T428/31533
摘要： An exemplary organic semiconductor copolymer includes a polymeric repeat structure having a polythiophene structure and an electron accepting unit. The electron accepting unit has at least one electron-accepting heteroaromatic structure with at least one electron-withdrawing imine nitrogen in the heteroaromatic structure or a thiophene-arylene comprising a C2-30 heteroaromatic structure. Methods of synthesis and electronic devices incorporating the disclosed organic semiconductors, e.g., as a channel layer, are also disclosed.
摘要翻译：示例性的有机半导体共聚物包括具有聚噻吩结构的聚合物重复结构和电子接受单元。电子接受单元具有在杂芳族结构中具有至少一个吸电子亚胺氮的至少一个电子接受性杂芳族结构或包含C 2〜2-30杂芳族结构的噻吩 - 亚芳基。还公开了合成方法和结合所公开的有机半导体的电子器件，例如作为沟道层。

9. 发明申请

US20060128083A1 Method for fabricating organic thin film transistor 有权
标题翻译：制造有机薄膜晶体管的方法
公开(公告)号：US20060128083A1
公开(公告)日：2006-06-15
申请号：US11123120
申请日：2005-05-06
申请人： Hyun Park , Bon Koo , Joo Kim , Jung Shin , Eun Jeong , Sang Lee
发明人： Hyun Park , Bon Koo , Joo Kim , Jung Shin , Eun Jeong , Sang Lee
IPC分类号： H01L21/8234
CPC分类号： H01L51/0529 , H01L51/0036 , H01L51/0052 , H01L51/0078 , H01L51/052 , H01L51/105
摘要： Disclosed herein is a method for fabricating an organic thin film transistor comprising a gate electrode, a gate insulating film, source/drain electrodes and an organic semiconductor layer formed in this order on a substrate wherein the surface of the gate insulating film on which source/drain electrodes are formed is impregnated with an inorganic or organic acid, followed by annealing. According to the method, the surface of a gate insulating film damaged by a photoresist process can be effectively recovered. In addition, organic thin film transistors having high charge carrier mobility and high on/off current ratio can be fabricated.
摘要翻译：本文公开了一种制造有机薄膜晶体管的方法，其包括在基板上依次形成的栅电极，栅极绝缘膜，源极/漏极和有机半导体层，其中栅极绝缘膜的表面上的源极/ 形成漏电极用无机酸或有机酸浸渍，然后进行退火。根据该方法，可以有效地回收由光刻胶工艺损坏的栅极绝缘膜的表面。此外，可以制造具有高电荷载流子迁移率和高导通/截止电流比的有机薄膜晶体管。

10. 发明申请

US20060115998A1 Method for forming pattern of organic insulating film 有权
标题翻译：形成有机绝缘膜图案的方法
公开(公告)号：US20060115998A1
公开(公告)日：2006-06-01
申请号：US11195694
申请日：2005-08-03
申请人： Jung Shin , Joon Park , Min Ryu , Young Son , Sang Lee
发明人： Jung Shin , Joon Park , Min Ryu , Young Son , Sang Lee
IPC分类号： H01L21/31
CPC分类号： B82Y10/00 , B82Y30/00 , B82Y40/00 , G03F7/0002 , H01L51/0015 , H01L51/0017 , H01L51/0516 , H01L2251/105
摘要： A method for forming a pattern of an organic insulating film by forming an electrode on a substrate, coating an imprintable composition thereon to form an organic insulating film, pressurizing and curing the organic insulating film using a patterned mold to transfer a pattern of the mold to the organic insulating film, and etching a portion of the organic insulating film remaining on the electrode. Since a pattern of an organic insulating film can be formed by simple molding without the use of a photoresist, the overall procedure is simplified and eventually an organic thin film transistor with high charge carrier mobility can be fabricated by all wet processes.
摘要翻译：一种通过在基板上形成电极形成有机绝缘膜的图案的方法，在其上涂覆可压印组合物以形成有机绝缘膜，使用图案化模具加压和固化有机绝缘膜，以将模具的图案转移到有机绝缘膜，并蚀刻残留在电极上的有机绝缘膜的一部分。由于可以通过简单的模制而不使用光致抗蚀剂来形成有机绝缘膜的图案，因此简化了整个过程，并且最终可以通过所有湿法制造具有高载流子迁移率的有机薄膜晶体管。

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