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    • 3. 发明授权
    • Off-center deposition of organic semiconductor in an organic semiconductor device
    • 有机半导体在有机半导体器件中的偏心沉积
    • US07948016B1
    • 2011-05-24
    • US12611556
    • 2009-11-03
    • Scott M. SchnobrichRobert S. CloughDennis E. VogelMichael E. Griffin
    • Scott M. SchnobrichRobert S. CloughDennis E. VogelMichael E. Griffin
    • H01L29/76H01L23/58
    • H01L51/0005H01L51/0558
    • The present disclosure provides a method of making a thin film semiconductor device such as a transistor comprising the steps of: a) providing a substrate bearing first and second conductive zones which define a channel therebetween, where the channel does not border more than 75% of the perimeter of either conductive zone; and b) depositing a discrete aliquot of a solution comprising an organic semiconductor adjacent to or on the channel, where a majority of the solution is deposited to one side of the channel and not on the channel. In some embodiments of the present disclosure, the solution is deposited entirely to one side of the channel, not on the channel, and furthermore the solution is deposited in a band having a length that is less than the channel length. The present disclosure additionally provides thin film semiconductor devices such as a transistors.
    • 本公开内容提供了制造诸如晶体管的薄膜半导体器件的方法,包括以下步骤:a)提供承载第一和第二导电区域的衬底,其在其间限定通道,其中通道不超过75% 任一导电区的周长; 以及b)沉积包含邻近于或在通道上的有机半导体的溶液的离散等分试样,其中大部分溶液沉积在通道的一侧,而不是在通道上。 在本公开的一些实施例中,溶液完全沉积在通道的一侧,而不是在通道上,此外,溶液沉积在具有小于通道长度的长度的带中。 本公开另外提供诸如晶体管的薄膜半导体器件。