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1. 发明申请

US20120172394A1 PHARMACEUTICAL COMPOSITION FOR PREVENTING OR TREATING RHEUMATOID ARTHRITIS, CONTAINING REBAMIPIDE 有权
标题翻译：用于预防或治疗含有雷贝匹丁的湿疹风湿性关节炎药物组合物
公开(公告)号：US20120172394A1
公开(公告)日：2012-07-05
申请号：US13392197
申请日：2009-10-08
申请人： Jun-Ki Min , Mi-La Cho , Yun-Ju Woo , Hye-Jwa Oh , Joo-Yeon Jhun , Geun-Hyeog Lee , Se-Wan Park , Jin-Ha Park , Eun-Young Kwak
发明人： Jun-Ki Min , Mi-La Cho , Yun-Ju Woo , Hye-Jwa Oh , Joo-Yeon Jhun , Geun-Hyeog Lee , Se-Wan Park , Jin-Ha Park , Eun-Young Kwak
IPC分类号： A61K31/4704 , A61P29/00
CPC分类号： A61K31/4704
摘要： The present invention provides a pharmaceutical composition for preventing or treating rheumatoid arthritis comprising rebamipide as an active ingredient and a pharmaceutically acceptable carrier. The pharmaceutical composition may be for oral administration, for example an oral solid dosage form of a tablet or capsule form. The pharmaceutical composition may be formulated into a unit dosage form suitable for orally administering rebamipide in a dose ranging from 0.5 to 50 mg/kg, preferably from 0.6 to 6 mg/kg.
摘要翻译：本发明提供了一种用于预防或治疗类风湿性关节炎的药物组合物，其包含瑞巴派特作为活性成分和药学上可接受的载体。药物组合物可用于口服给药，例如片剂或胶囊形式的口服固体剂型。药物组合物可以配制成适于以0.5至50mg / kg，优选0.6至6mg / kg的剂量口服施用瑞巴派特的单位剂型。

2. 发明授权

US08691842B2 Pharmaceutical composition for preventing or treating rheumatoid arthritis, containing rebamipide 有权
标题翻译：用于预防或治疗类风湿性关节炎的药物组合物，含有瑞巴派特
公开(公告)号：US08691842B2
公开(公告)日：2014-04-08
申请号：US13392197
申请日：2009-10-08
申请人： Jun-Ki Min , Mi-La Cho , Yun-Ju Woo , Hye-Jwa Oh , Joo-Yeon Jhun , Geun-Hyeog Lee , Se-Wan Park , Jin-Ha Park , Eun-Young Kwak
发明人： Jun-Ki Min , Mi-La Cho , Yun-Ju Woo , Hye-Jwa Oh , Joo-Yeon Jhun , Geun-Hyeog Lee , Se-Wan Park , Jin-Ha Park , Eun-Young Kwak
IPC分类号： A01N43/42 , A61K31/47 , A61K9/14 , A01N43/06 , A61K31/38
CPC分类号： A61K31/4704
摘要： The present invention provides a pharmaceutical composition for preventing or treating rheumatoid arthritis comprising rebamipide as an active ingredient and a pharmaceutically acceptable carrier. The pharmaceutical composition may be for oral administration, for example an oral solid dosage form of a tablet or capsule form. The pharmaceutical composition may be formulated into a unit dosage form suitable for orally administering rebamipide in a dose ranging from 0.5 to 50 mg/kg, preferably from 0.6 to 6 mg/kg.
摘要翻译：本发明提供了一种用于预防或治疗类风湿性关节炎的药物组合物，其包含瑞巴派特作为活性成分和药学上可接受的载体。药物组合物可用于口服给药，例如片剂或胶囊形式的口服固体剂型。药物组合物可以配制成适于以0.5至50mg / kg，优选0.6至6mg / kg的剂量口服施用瑞巴派特的单位剂型。

3. 发明授权

US09601628B2 Semiconductor device having asymmetric fin-shaped pattern 有权
公开(公告)号：US09601628B2
公开(公告)日：2017-03-21
申请号：US14983904
申请日：2015-12-30
申请人： Jung-Gun You , Se-Wan Park , Baik-Min Sung , Bo-Cheol Jeong
发明人： Jung-Gun You , Se-Wan Park , Baik-Min Sung , Bo-Cheol Jeong
IPC分类号： H01L29/06 , H01L29/78 , H01L27/088 , H01L21/762 , H01L21/311
CPC分类号： H01L27/0886 , H01L21/823431 , H01L21/823481 , H01L29/0649 , H01L29/7851 , H01L29/7853 , H01L29/7854
摘要： Semiconductor devices are provided including a first fin-shaped pattern having first and second sidewalls facing one another and a field insulating film contacting at least a portion of the first fin-shaped pattern. The first fin-shaped pattern includes a lower portion of the first fin-shaped pattern contacting the field insulating film; an upper portion of the first fin-shaped pattern not contacting the field insulating film; a first boundary between the lower portion of the first fin-shaped pattern and the upper portion of the first fin-shaped pattern; and a first fin center line perpendicular to the first boundary and meeting the top of the upper portion of the first fin-shaped pattern. The first sidewall of the upper portion of the first fin-shaped pattern and the second sidewall of the upper portion of the first fin-shaped pattern are asymmetric with respect to the first fin center line.

4. 发明申请

US20160211379A1 SEMICONDUCTOR DEVICE HAVING ASYMMETRIC FIN-SHAPED PATTERN 有权
标题翻译：具有不对称精细形状图案的半导体器件
公开(公告)号：US20160211379A1
公开(公告)日：2016-07-21
申请号：US14983904
申请日：2015-12-30
申请人： Jung-Gun You , Se-Wan Park , Baik-Min Sung , Bo-Cheol Jeong
发明人： Jung-Gun You , Se-Wan Park , Baik-Min Sung , Bo-Cheol Jeong
IPC分类号： H01L29/78 , H01L29/06 , H01L27/088
CPC分类号： H01L27/0886 , H01L21/823431 , H01L21/823481 , H01L29/0649 , H01L29/7851 , H01L29/7853 , H01L29/7854
摘要： Semiconductor devices are provided including a first fin-shaped pattern having first and second sidewalls facing one another and a field insulating film contacting at least a portion of the first fin-shaped pattern. The first fin-shaped pattern includes a lower portion of the first fin-shaped pattern contacting the field insulating film; an upper portion of the first fin-shaped pattern not contacting the field insulating film; a first boundary between the lower portion of the first fin-shaped pattern and the upper portion of the first fin-shaped pattern; and a first fin center line perpendicular to the first boundary and meeting the top of the upper portion of the first fin-shaped pattern. The first sidewall of the upper portion of the first fin-shaped pattern and the second sidewall of the upper portion of the first fin-shaped pattern are asymmetric with respect to the first fin center line.
摘要翻译：提供半导体器件，其包括具有彼此面对的第一和第二侧壁的第一鳍状图案和与第一鳍状图案的至少一部分接触的场绝缘膜。第一鳍状图案包括与场绝缘膜接触的第一鳍状图案的下部; 所述第一鳍状图案的上部不与所述场绝缘膜接触; 第一鳍状图案的下部与第一鳍状图案的上部之间的第一边界; 以及垂直于第一边界并且满足第一鳍状图案的上部的顶部的第一鳍中心线。第一鳍状图案的上部的第一侧壁和第一鳍状图案的上部的第二侧壁相对于第一翅片中心线是不对称的。

5. 发明授权

US09620406B2 Methods for fabricating semiconductor devices having fin-shaped patterns by selectively removing oxidized fin-shaped patterns 有权
公开(公告)号：US09620406B2
公开(公告)日：2017-04-11
申请号：US14968999
申请日：2015-12-15
申请人： Jung-Gun You , Se-Wan Park , Seung-Woo Do , In-Won Park , Sug-Hyun Sung
发明人： Jung-Gun You , Se-Wan Park , Seung-Woo Do , In-Won Park , Sug-Hyun Sung
IPC分类号： H01L21/762 , H01L29/66 , H01L29/417 , H01L29/78 , H01L29/165
CPC分类号： H01L29/66545 , H01L21/30604 , H01L21/3085 , H01L21/76224 , H01L29/165 , H01L29/41766 , H01L29/66795 , H01L29/6681 , H01L29/66818 , H01L29/7848 , H01L29/785
摘要： A method for fabricating a semiconductor device is provided. The method includes forming a first fin-shaped pattern including an upper part and a lower part on a substrate, forming a second fin-shaped pattern by removing a part of the upper part of the first fin-shaped pattern, forming a dummy gate electrode intersecting with the second fin-shaped pattern on the second fin-shaped pattern, and forming a third fin-shaped pattern by removing a part of an upper part of the second fin-shaped pattern after forming the dummy gate electrode, wherein a width of the upper part of the second fin-shaped pattern is smaller than a width of the upper part of the first fin-shaped pattern and is greater than a width of an upper portion of the third fin-shaped pattern.

6. 发明申请

US20160163877A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20160163877A1
公开(公告)日：2016-06-09
申请号：US14953769
申请日：2015-11-30
申请人： Jae-Yup Chung , Hee-Soo Kang , Hee-Don Jeong , Se-Wan Park
发明人： Jae-Yup Chung , Hee-Soo Kang , Hee-Don Jeong , Se-Wan Park
IPC分类号： H01L29/786
CPC分类号： H01L29/7848 , H01L27/0886 , H01L29/785
摘要： A semiconductor device includes a first multi-channel active pattern, a field insulation layer disposed on the first multi-channel active pattern and including a first region and a second region, the first region having a top surface protruding from a top surface of the second region to a top surface of the first multi-channel active pattern, a first gate electrode crossing the first multi-channel active pattern, the first gate electrode being disposed on the field insulation layer, and a first source or drain disposed between the first gate electrode and the first region of the field insulation layer and including a first facet, the first facet being disposed adjacent to the first region of the field insulation layer at a point lower than the top surface of the first multi-channel active pattern.
摘要翻译：半导体器件包括第一多通道有源图案，设置在第一多通道有源图案上并包括第一区域和第二区域的场绝缘层，第一区域具有从第二多通道有源图案的顶表面突出的顶表面区域到第一多通道有源图案的顶表面，与第一多通道有源图案交叉的第一栅电极，设置在场绝缘层上的第一栅极电极和设置在第一栅极之间的第一栅极或漏极电极和场绝缘层的第一区域并且包括第一小面，第一面在比第一多通道活性图案的顶表面低的点处邻近场绝缘层的第一区域设置。

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