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1. 发明授权

US08033881B2 Method of manufacturing field emission device 有权
标题翻译：场致发射装置的制造方法
公开(公告)号：US08033881B2
公开(公告)日：2011-10-11
申请号：US11812962
申请日：2007-06-22
申请人： Jun-Hee Choi , Min-Jong Bae
发明人： Jun-Hee Choi , Min-Jong Bae
IPC分类号： H01J9/00 , H01J9/24 , H01J9/04
CPC分类号： H01J31/127 , H01J9/025 , H01J29/04
摘要： A method of manufacturing a field emission device comprises: sequentially forming cathodes and a light blocking layer on a substrate, and patterning the light blocking layer to form blocking layer holes; sequentially forming an insulating layer and a gate material layer on the light blocking layer, and patterning the gate material layer to form gate electrodes in which gate electrode holes are formed; coating a photoresist on the gate electrodes, and exposing and developing the photoresist to form resist holes inside the gate electrode holes; isotropically etching portions of the insulating layer exposed through the resist holes to form insulating layer holes; etching portions of the gate electrodes exposed by the insulating layer holes to form gate holes, and removing the photoresist; and forming emitters on the cathode electrodes exposed by the blocking layer holes.
摘要翻译：制造场致发射器件的方法包括：在衬底上依次形成阴极和遮光层，并对阻光层进行构图以形成阻挡层孔; 在遮光层上依次形成绝缘层和栅极材料层，并对栅极材料层进行构图以形成形成栅电极孔的栅电极; 在栅电极上涂覆光致抗蚀剂，以及曝光和显影光致抗蚀剂以在栅电极孔内形成抗蚀剂孔; 各向同性蚀刻通过抗蚀剂孔露出的绝缘层的部分，形成绝缘层孔; 蚀刻由绝缘层孔暴露的栅电极的部分以形成栅极孔，并除去光致抗蚀剂; 并在由阻挡层孔露出的阴极上形成发射体。

2. 发明申请

US20080153380A1 Method of manufacturing field emission device 有权
标题翻译：场致发射装置的制造方法
公开(公告)号：US20080153380A1
公开(公告)日：2008-06-26
申请号：US11812962
申请日：2007-06-22
申请人： Jun-Hee Choi , Min-Jong Bae
发明人： Jun-Hee Choi , Min-Jong Bae
IPC分类号： H01J9/02
CPC分类号： H01J31/127 , H01J9/025 , H01J29/04
摘要： A method of manufacturing a field emission device comprises: sequentially forming cathodes and a light blocking layer on a substrate, and patterning the light blocking layer to form blocking layer holes; sequentially forming an insulating layer and a gate material layer on the light blocking layer, and patterning the gate material layer to form gate electrodes in which gate electrode holes are formed; coating a photoresist on the gate electrodes, and exposing and developing the photoresist to form resist holes inside the gate electrode holes; isotropically etching portions of the insulating layer exposed through the resist holes to form insulating layer holes; etching portions of the gate electrodes exposed by the insulating layer holes to form gate holes, and removing the photoresist; and forming emitters on the cathode electrodes exposed by the blocking layer holes.
摘要翻译：制造场致发射器件的方法包括：在衬底上依次形成阴极和遮光层，并对阻光层进行构图以形成阻挡层孔; 在遮光层上依次形成绝缘层和栅极材料层，并对栅极材料层进行构图以形成形成栅电极孔的栅电极; 在栅电极上涂覆光致抗蚀剂，以及曝光和显影光致抗蚀剂以在栅电极孔内形成抗蚀剂孔; 各向同性蚀刻通过抗蚀剂孔露出的绝缘层的部分，形成绝缘层孔; 蚀刻由绝缘层孔暴露的栅电极的部分以形成栅极孔，并除去光致抗蚀剂; 并在由阻挡层孔露出的阴极上形成发射体。

3. 发明授权

US07326098B2 Method of fabricating a field emission backlight device 失效
标题翻译：制造场致发射背光装置的方法
公开(公告)号：US07326098B2
公开(公告)日：2008-02-05
申请号：US11673736
申请日：2007-02-12
申请人： Jun-Hee Choi , Byong-Gwon Song , Moon-Jin Shin , Andrei Zoulkarneev , Deuk-Seok Chung , Min-Jong Bae
发明人： Jun-Hee Choi , Byong-Gwon Song , Moon-Jin Shin , Andrei Zoulkarneev , Deuk-Seok Chung , Min-Jong Bae
IPC分类号： H01J9/00
CPC分类号： H01J9/148 , B82Y10/00 , H01J9/025 , H01J63/02 , H01J2201/30469
摘要： A field emission backlight device may include a first substrate and a second substrate separate from and roughly parallel to each other, a first anode electrode and a second anode electrode that face each other on inner surfaces of the first substrate and the second substrate, and cathode electrodes separate from and roughly parallel to one another between the first substrate and the second substrate. It may also include electron emission sources disposed on the cathode electrodes to emit electrons by an electric field and a phosphorous layer disposed on the first anode electrode or the second anode electrode.
摘要翻译：场发射背光装置可以包括彼此分离并且大致平行的第一基板和第二基板，在第一基板和第二基板的内表面上彼此相对的第一阳极电极和第二阳极电极，以及阴极电极在第一基板和第二基板之间彼此分离并且基本上彼此平行。还可以包括设置在阴极电极上的电子发射源，通过电场发射电子，并且设置在第一阳极电极或第二阳极电极上的磷层。

4. 发明授权

US07432646B2 Thermal electron emission backlight device 失效
标题翻译：热电子发射背光装置
公开(公告)号：US07432646B2
公开(公告)日：2008-10-07
申请号：US11432533
申请日：2006-05-12
申请人： Jun-Hee Choi , Deuk-Seok Chung , Byong-Gwon Song , Andrei Zoulkarneev , Chan-Wook Baik , Ha-Jong Kim , Moon-Jin Shin , Ho-Suk Kang
发明人： Jun-Hee Choi , Deuk-Seok Chung , Byong-Gwon Song , Andrei Zoulkarneev , Chan-Wook Baik , Ha-Jong Kim , Moon-Jin Shin , Ho-Suk Kang
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01J63/02 , H01J63/04
摘要： A thermal electron emission backlight device comprises: a first substrate and a second substrate disposed in parallel and separated by a predetermined distance from each other; a first anode electrode and a second anode electrode facing the first anode electrode, the first and second anode electrodes being formed on inner surfaces of the first substrate and the second substrate, respectively; cathode electrodes disposed at predetermined intervals and in parallel with each other between the first substrate and the second substrate; a phosphor layer formed on the second anode electrode; and a plurality of spacers disposed between the first substrate and the second substrate so as to maintain the predetermined distance therebetween. When a predetermined voltage is applied to the cathode electrodes, thermal electrons are emitted from the cathode electrodes.
摘要翻译：热电子发射背光装置包括：第一基板和第二基板，彼此平行设置并隔开预定的距离; 第一阳极电极和面对第一阳极电极的第二阳极电极，第一阳极电极和第二阳极电极分别形成在第一基板和第二基板的内表面上; 在第一基板和第二基板之间以预定间隔布置并且彼此平行的阴极; 形成在所述第二阳极电极上的荧光体层; 以及设置在第一基板和第二基板之间的多个间隔件，以便保持它们之间的预定距离。当向阴极施加预定电压时，从阴极发射热电子。

5. 发明申请

US20080164475A1 Method of forming polysilicon, thin film transistor using the polysilicon, and method of fabricating the thin film transistor 有权
标题翻译：使用多晶硅形成多晶硅的方法，使用该多晶硅的薄膜晶体管，以及制造该薄膜晶体管的方法
公开(公告)号：US20080164475A1
公开(公告)日：2008-07-10
申请号：US11882725
申请日：2007-08-03
申请人： Jun-Hee Choi , Andrei Zoulkarneev
发明人： Jun-Hee Choi , Andrei Zoulkarneev
IPC分类号： H01L29/786 , H01L21/84
CPC分类号： H01L29/6675 , H01L21/02667 , H01L29/42384 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L29/78672 , H01L29/78678
摘要： A method of forming polysilicon, a thin film transistor (TFT) using the polysilicon, and a method of fabricating the TFT are disclosed. The method of forming the polysilicon comprises: forming an insulating layer on a substrate; forming a first electrode and a second electrode on the insulating layer; forming at least one heater layer on the insulating layer so as to connect the first electrode and the second electrode; forming an amorphous material layer containing silicon on the heater layer(s); forming a through-hole under the heater layer(s) by etching the insulating layer; and crystallizing the amorphous material layer into a polysilicon layer by applying a voltage between the first electrode and the second electrode so as to heat the heater layer(s).
摘要翻译：公开了一种形成多晶硅的方法，使用多晶硅的薄膜晶体管（TFT）和制造该TFT的方法。形成多晶硅的方法包括：在衬底上形成绝缘层; 在所述绝缘层上形成第一电极和第二电极; 在所述绝缘层上形成至少一个加热层，以连接所述第一电极和所述第二电极; 在所述加热器层上形成含有硅的非晶材料层; 通过蚀刻绝缘层在加热器层下形成通孔; 以及通过在所述第一电极和所述第二电极之间施加电压以将所述非晶材料层结晶成多晶硅层，以加热所述加热层。

6. 发明申请

US20050133779A1 Field emission device, display adopting the same and method of manufacturing the same 有权
标题翻译：场发射装置，采用相同的显示器及其制造方法
公开(公告)号：US20050133779A1
公开(公告)日：2005-06-23
申请号：US11002073
申请日：2004-12-03
申请人： Jun-Hee Choi , Andrei Zoulkarneev
发明人： Jun-Hee Choi , Andrei Zoulkarneev
IPC分类号： H01J29/04 , H01J1/30 , H01J1/304 , H01J3/02 , H01J9/02 , H01J29/46 , H01J29/48 , H01J31/12 , H01L21/00 , H01L29/06
CPC分类号： B82Y10/00 , H01J3/022 , H01J9/025 , H01J29/481 , H01J2201/30469 , H01J2329/00 , Y10S977/939
摘要： A field emission device comprises a glass substrate, an emitter electrode formed on the glass substrate, a carbon nanotube (CNT) emitter formed on the emitter electrode, and a gate stack formed around the CNT emitter for extracting electron beams from the CNT emitter and focusing the extracted electron beams onto a given position. The gate stack includes a mask layer covering the emitter electrode and provided around the CNT emitter, a gate insulating layer formed on the mask layer to a predetermined height, a mirror electrode formed on an inclined plane of the gate insulating layer, a gate electrode formed on the gate insulating layer and spaced apart from the mirror electrode, and a focus gate insulating layer and a focus gate electrode sequentially formed on the gate electrode. The field emission device is manufactured and employed in a display device in accordance with the present invention.
摘要翻译：场发射器件包括玻璃衬底，形成在玻璃衬底上的发射电极，在发射极上形成的碳纳米管（CNT）发射极，以及形成在CNT发射器周围的用于从CNT发射器提取电子束的聚焦提取的电子束到给定位置。栅极堆叠包括覆盖发射极并且设置在CNT发射极周围的掩模层，在掩模层上形成预定高度的栅极绝缘层，形成在栅极绝缘层的倾斜平面上的反射镜电极，形成的栅电极在栅绝缘层上并且与镜电极间隔开，以及顺序形成在栅电极上的聚焦栅极绝缘层和聚焦栅电极。在根据本发明的显示装置中制造并采用场致发射装置。

7. 发明申请

US20050129858A1 Forming carbon nanotube emitter 失效
标题翻译：形成碳纳米管发射体
公开(公告)号：US20050129858A1
公开(公告)日：2005-06-16
申请号：US10992333
申请日：2004-11-19
申请人： Yong-Wan Jin , Hyun-Jung Lee , Jong-Woon Moon , Deuk-Seok Chung , Jun-Hee Choi , Sung-Hee Cho
发明人： Yong-Wan Jin , Hyun-Jung Lee , Jong-Woon Moon , Deuk-Seok Chung , Jun-Hee Choi , Sung-Hee Cho
IPC分类号： H01J1/304 , H01J9/02 , B05D3/02
CPC分类号： H01J9/025 , B82Y30/00 , H01J1/3042
摘要： A method of forming a carbon nanotube emitter includes: forming a carbon nanotube composite on a substrate with a predetermined shape, coating surface treating material in a liquid phase on the carbon nanotube composite and drying the surface treating material, and peeling the dried surface treating material off of the carbon nanotube composite.
摘要翻译：形成碳纳米管发射体的方法包括：在具有预定形状的基板上形成碳纳米管复合材料，在碳纳米管复合材料上形成液相涂布表面处理材料，并干燥表面处理材料，并将干燥的表面处理材料关闭碳纳米管复合材料。

8. 发明授权

US08445333B2 Method of forming polysilicon, thin film transistor using the polysilicon, and method of fabricating the thin film transistor 有权
标题翻译：使用多晶硅形成多晶硅的方法，使用该多晶硅的薄膜晶体管，以及制造该薄膜晶体管的方法
公开(公告)号：US08445333B2
公开(公告)日：2013-05-21
申请号：US12929587
申请日：2011-02-02
申请人： Jun-Hee Choi , Andrei Zoulkarneev
发明人： Jun-Hee Choi , Andrei Zoulkarneev
IPC分类号： H01L21/00 , H01L21/84 , H01L21/20
CPC分类号： H01L29/6675 , H01L21/02667 , H01L29/42384 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L29/78672 , H01L29/78678
摘要： A method of forming polysilicon, a thin film transistor (TFT) using the polysilicon, and a method of fabricating the TFT are disclosed. The method of forming the polysilicon comprises: forming an insulating layer on a substrate; forming a first electrode and a second electrode on the insulating layer; forming at least one heater layer on the insulating layer so as to connect the first electrode and the second electrode; forming an amorphous material layer containing silicon on the heater layer(s); forming a through-hole under the heater layer(s) by etching the insulating layer; and crystallizing the amorphous material layer into a polysilicon layer by applying a voltage between the first electrode and the second electrode so as to heat the heater layer(s).
摘要翻译：公开了一种形成多晶硅的方法，使用多晶硅的薄膜晶体管（TFT）和制造该TFT的方法。形成多晶硅的方法包括：在衬底上形成绝缘层; 在所述绝缘层上形成第一电极和第二电极; 在所述绝缘层上形成至少一个加热层，以连接所述第一电极和所述第二电极; 在所述加热器层上形成含有硅的非晶材料层; 通过蚀刻绝缘层在加热器层下形成通孔; 以及通过在所述第一电极和所述第二电极之间施加电压以将所述非晶材料层结晶成多晶硅层，以加热所述加热层。

9. 发明授权

US07646142B2 Field emission device (FED) having cathode aperture to improve electron beam focus and its method of manufacture 失效
标题翻译：具有阴极孔径以改善电子束聚焦的场发射器件（FED）及其制造方法
公开(公告)号：US07646142B2
公开(公告)日：2010-01-12
申请号：US11223031
申请日：2005-09-12
申请人： Ho-Suk Kang , Jun-Hee Choi , Byong-Gwon Song , Ha-Jong Kim
发明人： Ho-Suk Kang , Jun-Hee Choi , Byong-Gwon Song , Ha-Jong Kim
IPC分类号： H01J19/06 , H01J1/14 , H01K1/04 , H01J1/62
CPC分类号： H01J3/022 , H01J9/025 , H01J29/028 , H01J29/06 , H01J2329/00
摘要： A Field Emission Device (FED) and its method of manufacture includes: forming a substrate; forming a cathode having a cathode aperture on an upper surface of the substrate; forming a material layer having a first through hole with a smaller diameter than that of the cathode aperture on an upper surface of the cathode; forming a first insulator having a first cavity on an upper surface of the material layer; forming a gate electrode having a second through hole on an upper surface of the first insulator; and forming an emitter in a central portion of the cathode aperture.
摘要翻译：现场发射装置（FED）及其制造方法包括：形成基板; 在所述基板的上表面上形成具有阴极孔的阴极; 在所述阴极的上表面上形成具有比所述阴极孔径小的直径的第一通孔的材料层; 形成在所述材料层的上表面上具有第一空腔的第一绝缘体; 在所述第一绝缘体的上表面上形成具有第二通孔的栅电极; 并在阴极孔的中心部分形成发射极。

10. 发明授权

US07517710B2 Method of manufacturing field emission device 失效
标题翻译：场致发射装置的制造方法
公开(公告)号：US07517710B2
公开(公告)日：2009-04-14
申请号：US11604731
申请日：2006-11-28
申请人： Jun-Hee Choi , Ho-Suk Kang , Chan-Wook Baik , Ha-Jong Kim
发明人： Jun-Hee Choi , Ho-Suk Kang , Chan-Wook Baik , Ha-Jong Kim
IPC分类号： H01L21/00 , H01L29/06
CPC分类号： H01J9/025 , H01J3/021
摘要： A method of manufacturing a field emission device (FED), which reduces the number of photomask patterning processes and improves the manufacturing yield of the FED, is provided. The method includes steps of sequentially forming a cathode layer, a first insulating layer, and a gate layer on a substrate, forming a protection layer on the gate electrode layer, etching portions of the protection layer and gate electrode to form a plurality of first opening holes where portions of the first insulating layer being exposed through the first opening holes, forming a second insulating layer on the protection layer and on the first opening holes, forming a focus electrode layer on the second insulating layer, forming a photoresist layer on the focus electrode layer, etching a portion of the photoresist layer and a portion of the focus electrode layer to form a second opening hole where a portion of the second insulating layer being exposed through the second opening hole, and forming emitter holes exposing a portion of the cathode layer by etching the exposed surface of the second insulating layer to a bottom surface of the first insulating layer. After removing the photoresist layer electron emission emitters are formed on the cathode layer.
摘要翻译：提供了一种制造场致发射器件（FED）的方法，其减少了光掩模图案化工艺的数量并提高了FED的制造成品率。该方法包括以下步骤：在衬底上依次形成阴极层，第一绝缘层和栅极层，在栅电极层上形成保护层，蚀刻保护层和栅电极的部分，以形成多个第一开口第一绝缘层的部分通过第一开孔露出的孔，在保护层和第一开孔上形成第二绝缘层，在第二绝缘层上形成聚焦电极层，在焦点上形成光致抗蚀剂层蚀刻光致抗蚀剂层的一部分和聚焦电极层的一部分以形成第二开孔，其中第二绝缘层的一部分通过第二开孔暴露，并且形成暴露阴极的一部分的发射极通过将第二绝缘层的暴露表面蚀刻到第一绝缘层的底表面。在除去光致抗蚀剂层之后，在阴极层上形成电子发射发射体。

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