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1. 发明授权

US08450154B2 Oxide based memory with a controlled oxygen vacancy conduction path 有权
标题翻译：具有受控氧空位传导路径的基于氧化物的存储器
公开(公告)号：US08450154B2
公开(公告)日：2013-05-28
申请号：US13087050
申请日：2011-04-14
申请人： Jun Liu , Gurtej Sandhu
发明人： Jun Liu , Gurtej Sandhu
IPC分类号： H01L21/82
CPC分类号： H01L45/145 , H01L45/08 , H01L45/1266 , H01L45/146 , H01L45/1683
摘要： Methods, devices, and systems associated with oxide based memory can include a method of forming an oxide based memory cell. Forming an oxide based memory cell can include forming a first conductive element, forming a substoichiometric oxide over the first conductive element, forming a second conductive element over the substoichiometric oxide, and oxidizing edges of the substoichiometric oxide by subjecting the substoichiometric oxide to an oxidizing environment to define a controlled oxygen vacancy conduction path near a center of the oxide.
摘要翻译：与基于氧化物的存储器相关联的方法，装置和系统可以包括形成基于氧化物的存储器单元的方法。形成基于氧化物的存储单元可以包括形成第一导电元件，在第一导电元件上形成亚化学计量氧化物，在亚化学计量氧化物上形成第二导电元件，以及通过使亚化学计量氧化物氧化成氧化环境来氧化亚化学计量氧化物的边缘以限定氧化物中心附近的受控氧空位传导路径。

2. 发明授权

US08358531B2 Unidirectional spin torque transfer magnetic memory cell structure 有权
标题翻译：单向自旋转矩传递磁存储单元结构
公开(公告)号：US08358531B2
公开(公告)日：2013-01-22
申请号：US13357527
申请日：2012-01-24
申请人： Jun Liu , Gurtej Sandhu
发明人： Jun Liu , Gurtej Sandhu
IPC分类号： G11C11/14 , G11C11/15 , G11C11/16 , G11C11/02
CPC分类号： G11C11/1675 , G11C11/16 , G11C11/161 , G11C11/1695 , H01L43/02
摘要： Spin torque transfer magnetic random access memory devices configured to be programmed unidirectionally and methods of programming such devices. The devices include memory cells having two pinned layers and a free layer therebetween. By utilizing two pinned layers, the spin torque effect on the free layer from each of the two pinned layers, respectively, allows the memory cells to be programmed with unidirectional currents.
摘要翻译：配置为单向编程的自旋扭矩传递磁性随机存取存储器件以及编程这种器件的方法。这些装置包括具有两个钉扎层和其间的自由层的存储单元。通过利用两个固定层，分别从两个固定层中的每一个自由层上的自旋转矩效应允许以单向电流编程存储器单元。

3. 发明授权

US08238151B2 Transient heat assisted STTRAM cell for lower programming current 有权
标题翻译：瞬态热辅助STTRAM电池用于较低的编程电流
公开(公告)号：US08238151B2
公开(公告)日：2012-08-07
申请号：US12642533
申请日：2009-12-18
申请人： Jun Liu , Gurtej Sandhu
发明人： Jun Liu , Gurtej Sandhu
IPC分类号： G11C11/14
CPC分类号： G11C11/1675 , G11C11/161
摘要： A memory cell including magnetic materials and heating materials, and methods of programming the memory cell are provided. The memory cell includes a free region, a pinned region, and a heating region configured to generate and transfer heat to the free region when a programming current is directed to the cell. The heat transferred from the heating region increases the temperature of the free region, which decreases the magnetization and the critical switching current density of the free region. In some embodiments, the heating region may also provide a current path to the free region, and the magnetization of the free region may be switched according to the spin polarity of the programming current, programming the memory cell to a high resistance state or a low resistance state.
摘要翻译：提供包括磁性材料和加热材料的存储单元，以及编程存储单元的方法。存储单元包括自由区域，固定区域和加热区域，该区域被配置成当编程电流被引导到单元时，产生和传递热量到自由区域。从加热区域传递的热量增加了自由区域的温度，这降低了自由区域的磁化强度和临界开关电流密度。在一些实施例中，加热区域还可以提供到自由区域的电流路径，并且可以根据编程电流的自旋极性来切换自由区域的磁化，将存储器单元编程为高电阻状态或低电平状态电阻状态。

4. 发明授权

US08189450B2 Method and apparatus providing high density chalcogenide-based data storage 有权
标题翻译：提供高密度硫属元素化数据存储的方法和装置
公开(公告)号：US08189450B2
公开(公告)日：2012-05-29
申请号：US12837984
申请日：2010-07-16
申请人： Jun Liu , Mike Violette , Gurtej Sandhu
发明人： Jun Liu , Mike Violette , Gurtej Sandhu
IPC分类号： B11B9/00
CPC分类号： G11B9/04
摘要： A data storage device and methods for storing and reading data are provided. The data storage device includes a data storage medium and second device. The data storage medium has an insulating layer, a first electrode layer over the insulating layer and at least one layer of resistance variable material over the first electrode layer. The second device includes a substrate and at least one conductive point configured to electrically contact the data storage medium.
摘要翻译：提供了一种用于存储和读取数据的数据存储装置和方法。数据存储装置包括数据存储介质和第二装置。数据存储介质具有绝缘层，绝缘层上的第一电极层和第一电极层上的至少一层电阻可变材料。第二装置包括基板和被配置为电接触数据存储介质的至少一个导电点。

5. 发明申请

US20120120721A1 UNIDIRECTIONAL SPIN TORQUE TRANSFER MAGNETIC MEMORY CELL STRUCTURE 有权
标题翻译：单向转子扭矩传递磁性记忆体结构
公开(公告)号：US20120120721A1
公开(公告)日：2012-05-17
申请号：US13357527
申请日：2012-01-24
申请人： Jun Liu , Gurtej Sandhu
发明人： Jun Liu , Gurtej Sandhu
IPC分类号： G11C11/16 , H01L29/82
CPC分类号： G11C11/1675 , G11C11/16 , G11C11/161 , G11C11/1695 , H01L43/02
摘要： Spin torque transfer magnetic random access memory devices configured to be programmed unidirectionally and methods of programming such devices. The devices include memory cells having two pinned layers and a free layer therebetween. By utilizing two pinned layers, the spin torque effect on the free layer from each of the two pinned layers, respectively, allows the memory cells to be programmed with unidirectional currents.
摘要翻译：配置为单向编程的自旋扭矩传递磁性随机存取存储器件以及编程这种器件的方法。这些装置包括具有两个钉扎层和其间的自由层的存储单元。通过利用两个固定层，分别从两个固定层中的每一个自由层上的自旋转矩效应允许以单向电流编程存储器单元。

6. 发明申请

US20110149637A1 METHOD AND APPARATUS PROVIDING HIGH DENSITY CHALCOGENIDE-BASED DATA STORAGE 有权
标题翻译：提供高密度基于氯化氢的数据存储的方法和装置
公开(公告)号：US20110149637A1
公开(公告)日：2011-06-23
申请号：US12837984
申请日：2010-07-16
申请人： Jun Liu , Mike Violette , Gurtej Sandhu
发明人： Jun Liu , Mike Violette , Gurtej Sandhu
IPC分类号： G11C11/21 , H01L45/00 , B82Y10/00
CPC分类号： G11B9/04
摘要： A data storage device and methods for storing and reading data are provided. The data storage device includes a data storage medium and second device. The data storage medium has an insulating layer, a first electrode layer over the insulating layer and at least one layer of resistance variable material over the first electrode layer. The second device includes a substrate and at least one conductive point configured to electrically contact the data storage medium.
摘要翻译：提供了一种用于存储和读取数据的数据存储装置和方法。数据存储装置包括数据存储介质和第二装置。数据存储介质具有绝缘层，绝缘层上的第一电极层和第一电极层上的至少一层电阻可变材料。第二装置包括基板和被配置为电接触数据存储介质的至少一个导电点。

7. 发明授权

US07944738B2 Spin torque transfer cell structure utilizing field-induced antiferromagnetic or ferromagnetic coupling 有权
标题翻译：使用场诱导反铁磁或铁磁耦合的自旋转矩传递单元结构
公开(公告)号：US07944738B2
公开(公告)日：2011-05-17
申请号：US12265340
申请日：2008-11-05
申请人： Jun Liu , Gurtej Sandhu
发明人： Jun Liu , Gurtej Sandhu
IPC分类号： G11C11/00
CPC分类号： H01F10/329 , B82Y25/00 , G01R33/093 , G01R33/1284 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3268
摘要： A magnetic memory cell including a soft magnetic layer and a coupling layer, and methods of operating the memory cell are provided. The memory cell includes a stack with a free ferromagnetic layer and a pinned ferromagnetic layer, and a soft magnetic layer and a coupling layer may also be formed as layers in the stack. The coupling layer may cause antiferromagnetic coupling to induce the free ferromagnetic layer to be magnetized in a direction antiparallel to the magnetization of the soft magnetic layer, or the coupling layer may cause ferromagnetic coupling to induce the free ferromagnetic layer to be magnetized in a direction parallel to the magnetization of the soft magnetic layer. The coupling layer, through a coupling effect, reduces the critical switching current of the memory cell.
摘要翻译：提供了包括软磁性层和耦合层的磁存储单元，以及操作存储单元的方法。存储单元包括具有自由铁磁层和钉扎铁磁层的堆叠，并且软磁层和耦合层也可以形成为堆叠中的层。耦合层可以引起反铁磁耦合以使自由铁磁层在与软磁层的磁化方向反平行的方向上被磁化，或者耦合层可以引起铁磁性耦合，以使得自由铁磁层在平行方向上被磁化到软磁层的磁化。耦合层通过耦合效应降低了存储单元的关键开关电流。

8. 发明申请

US20100080048A1 STT-MRAM CELL STRUCTURE INCORPORATING PIEZOELECTRIC STRESS MATERIAL 有权
标题翻译： STT-MRAM结构与压电应力材料
公开(公告)号：US20100080048A1
公开(公告)日：2010-04-01
申请号：US12242247
申请日：2008-09-30
申请人： Jun Liu , Steve Kramer , Gurtej Sandhu
发明人： Jun Liu , Steve Kramer , Gurtej Sandhu
IPC分类号： G11C11/02
CPC分类号： G11C11/161 , G11C11/16 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： A magnetic memory cell including a piezoelectric material, and methods of operating the memory cell are provided. The memory cell includes a stack, and the piezoelectric material may be formed as a layer in the stack or adjacent the layers of the cell stack. The piezoelectric material may be used to induce a transient stress during programming of the memory cell to reduce the critical switching current of the memory cell.
摘要翻译：提供了包括压电材料的磁存储单元和操作存储单元的方法。存储单元包括堆叠，并且压电材料可以形成为堆叠中的层或邻近电池堆的层。压电材料可以用于在编程存储器单元期间引起瞬态应力以减小存储器单元的关键开关电流。

9. 发明申请

US20120287704A1 SPIN CURRENT GENERATOR FOR STT-MRAM OR OTHER SPINTRONICS APPLICATIONS 有权
标题翻译：用于STT-MRAM或其他SPINTRONICS应用的旋转电流发生器
公开(公告)号：US20120287704A1
公开(公告)日：2012-11-15
申请号：US13555940
申请日：2012-07-23
申请人： Jun Liu , Gurtej Sandhu
发明人： Jun Liu , Gurtej Sandhu
IPC分类号： G11C11/16
CPC分类号： G11C11/1675 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/1284 , G11C11/16 , H01F10/3218 , Y10S977/934
摘要： Spin current generators and systems and methods for employing spin current generators. A spin current generator may be configured to generate a spin current polarized in one direction, or a spin current selectively polarized in two directions. The spin current generator may by employed in spintronics applications, wherein a spin current is desired.
摘要翻译：自旋电流发生器和采用自旋电流发生器的系统和方法。自旋电流发生器可以被配置为产生在一个方向上偏振的自旋电流，或者在两个方向上选择性地偏振的自旋电流。自旋电流发生器可用于自旋电子学应用中，其中期望自旋电流。

10. 发明授权

US08310861B2 STT-MRAM cell structure incorporating piezoelectric stress material 有权
标题翻译： STT-MRAM电池结构结合压电应力材料
公开(公告)号：US08310861B2
公开(公告)日：2012-11-13
申请号：US12242247
申请日：2008-09-30
申请人： Jun Liu , Steve Kramer , Gurtej Sandhu
发明人： Jun Liu , Steve Kramer , Gurtej Sandhu
IPC分类号： G11C11/00
CPC分类号： G11C11/161 , G11C11/16 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： A magnetic memory cell including a piezoelectric material, and methods of operating the memory cell are provided. The memory cell includes a stack, and the piezoelectric material may be formed as a layer in the stack or adjacent the layers of the cell stack. The piezoelectric material may be used to induce a transient stress during programming of the memory cell to reduce the critical switching current of the memory cell.
摘要翻译：提供了包括压电材料的磁存储单元和操作存储单元的方法。存储单元包括堆叠，并且压电材料可以形成为堆叠中的层或邻近电池堆的层。压电材料可以用于在编程存储器单元期间引起瞬态应力以减小存储器单元的关键开关电流。

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