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1. 发明授权

US06447600B1 Method of removing defects of single crystal material and single crystal material from which defects are removed by the method 有权
标题翻译：通过该方法去除缺陷的单晶材料和单晶材料的缺陷的去除方法
公开(公告)号：US06447600B1
公开(公告)日：2002-09-10
申请号：US09806550
申请日：2001-03-30
申请人： Jun Furukawa , Mitsuru Sudou , Tetsuya Nakai , Takao Fujikawa , Takuya Masui
发明人： Jun Furukawa , Mitsuru Sudou , Tetsuya Nakai , Takao Fujikawa , Takuya Masui
IPC分类号： C30B2502
CPC分类号： C30B29/06 , C30B29/40 , C30B29/42 , C30B29/48 , C30B33/00 , C30B33/02 , H01L21/3225 , H01L21/3228 , H01L21/324 , H01L21/3245
摘要： A hot isostatic pressing treatment is conducted for a single crystal body (11) in an atmosphere where the single crystal body (11) is stable, under a pressure of 0.2 to 304 MPa at a temperature which is 0.85 or more times the melting point in an absolute temperature unit of the single crystal body (11), for 5 minutes to 20 hours; and the single crystal body (11) is annealed. It is preferable that the atmosphere where the single crystal body (11) is stable is an inert gas atmosphere or an atmosphere containing vapor of a high vapor pressure element, and it is more preferable that the HIP treatment is conducted under a pressure of 10 to 200 MPa. Further, the single crystal body (11) may be an ingot of a silicon single crystal, a GaAs single crystal, an InP single crystal, a ZnS single crystal or a ZnSe single crystal, or a block or wafer obtained by slicing the ingot. In this way, there are expelled or dispersed those lattice defects such as vacancy type grown-in defects existing not only at the surface but also at the interior of the single crystal body (11), irrespectively of the size of the single crystal body (11).
摘要翻译：在单晶体（11）稳定的气氛中，在0.2〜304MPa的压力下，在0.85以上的熔点的温度下，对单晶体（11）进行热等静压处理单晶体（11）的绝对温度单位为5分钟〜20小时; 和单晶体（11）进行退火。优选单晶体（11）稳定的气氛是惰性气体气氛或含有高蒸气压元素的蒸汽的气氛，更优选的是，在10〜10的压力下进行HIP处理 200MPa。此外，单晶体（11）可以是硅单晶，GaAs单晶，InP单晶，ZnS单晶或ZnSe单晶的晶锭，或者通过将晶片切片而获得的块或晶片。以这种方式，不仅存在单晶体（11）的表面而且在内部存在空位型生长缺陷的晶格缺陷的排出或分散，而与单晶体的尺寸无关 11）。

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