专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06172404B2 Tuneable holding voltage SCR ESD protection 有权
标题翻译：可调谐保持电压SCR ESD保护
公开(公告)号：US06172404B2
公开(公告)日：2001-01-09
申请号：US09183351
申请日：1998-10-30
申请人： Julian Z. Chen , Thomas A. Vrotsos , Yun-Shan Chang
发明人： Julian Z. Chen , Thomas A. Vrotsos , Yun-Shan Chang
IPC分类号： H01L2978
CPC分类号： H01L27/0262 , H01L29/7436
摘要： An SCR provides for increased holding voltage by decoupling the pnp and npn parasitic bipolar transistors of the SCR. In one embodiment, a N+ region is placed between the n+ region and the p+ region normally associated with conventional SCR devices, to formulate a new resistance. The new resistance is manifested to allow more current to flow through the new resistance rather than through the SCR parasitic pnp bipolar transistor. Since the parasitic pnp bipolar transistor no longer turns on as strongly as it would otherwise without the low resistance path through the new resistor, the holding voltage of the SCR is raised.
摘要翻译： SCR通过去除SCR的pnp和npn寄生双极晶体管来提供增加的保持电压。在一个实施例中，N +区域被放置在通常与常规SCR器件相关联的n +区域和p +区域之间，以形成新的电阻。新的电阻表现为允许更多的电流流过新的电阻而不是通过SCR寄生pnp双极晶体管。由于寄生pnp双极晶体管不再像以前那样强烈地导通，而没有通过新电阻的低电阻路径，所以SCR的保持电压升高。

2. 发明授权

US5982217A PNP driven NMOS ESD protection circuit 失效
标题翻译： PNP驱动的NMOS ESD保护电路
公开(公告)号：US5982217A
公开(公告)日：1999-11-09
申请号：US25916
申请日：1998-02-19
申请人： Julian Z. Chen , Larry B. Li , Thomas A. Vrotsos , Charvaka Duvvury
发明人： Julian Z. Chen , Larry B. Li , Thomas A. Vrotsos , Charvaka Duvvury
IPC分类号： H01L27/02 , H03K5/08
CPC分类号： H01L27/027 , H01L27/0259
摘要： A novel PNP driven NMOS (PDNMOS) protection scheme is provided for advanced nonsilicide/silicide submicron CMOS processes. The emitter of a PNP transistor and the drain of protection NMOS device are connected to an I/O pad for which ESD protection is provided by the PDNMOS. The collector of the PNP transistor and the gate of the protection NMOS transistor are connected to ground through a resistor. The source of the protection NMOS transistor is grounded. The base of the PNP transistor is connected to either a capacitor or the parasitic capacitor of the integrated circuit.
摘要翻译：为先进的非硅化物/硅化物亚微米CMOS工艺提供了新颖的PNP驱动NMOS（PDNMOS）保护方案。 PNP晶体管的发射极和保护NMOS漏极漏极连接到由PDNMOS提供ESD保护的I / O焊盘。 PNP晶体管的集电极和保护NMOS晶体管的栅极通过电阻连接到地。保护NMOS晶体管的源极接地。 PNP晶体管的基极连接到集成电路的电容器或寄生电容器。

3. 发明授权

US5780905A Asymmetrical, bidirectional triggering ESD structure 失效
标题翻译：不对称，双向触发ESD结构
公开(公告)号：US5780905A
公开(公告)日：1998-07-14
申请号：US768358
申请日：1996-12-17
申请人： Wayne T. Chen , Ross E. Teggatz , Julian Z. Chen
发明人： Wayne T. Chen , Ross E. Teggatz , Julian Z. Chen
IPC分类号： H01L27/02 , H01L23/62
CPC分类号： H01L27/0262
摘要： An ESD protection structure which includes, preferably a single semiconductor chip, a forward SCR for coupling across a source of potential and a reverse SCR for coupling across the same source of potential which is non-symmetrical to the forward SCR. The breakdown voltage of the forward SCR is different from the breakdown voltage of the reverse SCR. Each of the SCRs has a separate triggering mechanism. None of the anode, cathode and triggering elements of the forward SCR are common to the reverse SCR. A unidirectional device, preferably a Schottky diode, is disposed in the body of semiconductor material between the forward and reverse SCRs to prevent conduction from the body of semiconductor material when the source of potential across the SCRs is reversed.
摘要翻译：一种ESD保护结构，其优选地包括单个半导体芯片，用于跨越电位源耦合的正向SCR和用于跨过与正向SCR非对称的相同电位源耦合的反向SCR。正向SCR的击穿电压不同于反向SCR的击穿电压。每个SCR具有单独的触发机制。正向SCR的阳极，阴极和触发元件都不是反向SCR共有的。单向器件（优选肖特基二极管）设置在正向和反向SCR之间的半导体材料体内，以防止当跨越SCR的电位源反向时，半导体材料的主体导电。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式