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    • 1. 发明授权
    • Flared semiconductor optoelectronic device
    • 扩张半导体光电器件
    • US6014396A
    • 2000-01-11
    • US924217
    • 1997-09-05
    • Julian S. OsinskiRobert J. LangMats A. Hagberg
    • Julian S. OsinskiRobert J. LangMats A. Hagberg
    • H01S5/10H01S3/085
    • H01S5/10H01S2301/18H01S5/1064
    • As to a first feature, a semiconductor optoelectronic device includes a resonator having an optical cavity between opposite end facets, a larger portion of a length of the resonator cavity comprising a single mode confining region for propagation of light and a smaller portion of a length of the resonator cavity comprising a tapered region for permitting propagation of light with a diverging phase front to a first of the end facets, which first facet is the light beam output. The tapered region provides a sufficiently large aperture to prevent catastrophic optical mirror damage (COD) at the first end facet while reducing the amount of required astigmatism correction while the single mode confining region provides spatial filtering to maintain diffraction-limited beam at the output. This structure therefore, more readily lends itself for incorporation into existing device packages designed for linear stripe laser diodes devices. As to a second feature, a semiconductor optoelectronic device includes a gain region having a region permitting propagation of light with a diverging phase front to a first end facet of the device, which is its output, and a single mode region is coupled to an inner end of the gain region extending from the inner end to a second end facet of the device permitting propagation of light with an adiabatic phase front to the second end. The significantly smaller taper of the single mode region permits retained maintenance of single mode operation while reducing optical density of the propagating beam at the second end facet.
    • 关于第一特征,半导体光电子器件包括具有在相对端面之间的光学腔的谐振器,谐振器腔的长度的较大部分包括用于光的传播的单模约束区域和一段长度的 谐振器腔包括锥形区域,用于允许具有发散相位前沿的光传播到第一端面,第一面是光束输出。 锥形区域提供足够大的孔径以防止在第一端面处的灾难性光学镜损坏(COD),同时减少所需像散校正量,而单模限制区域提供空间滤波以在输出端保持衍射受限束。 因此,这种结构更容易适用于结合到为线性条形激光二极管器件设计的现有器件封装中。 关于第二特征,半导体光电子器件包括增益区域,该增益区域具有允许具有发散相位前沿的光的传播到作为其输出的器件的第一端面的区域,并且单模区域耦合到内部 增益区域的端部从设备的内端延伸到第二端面,允许具有绝热相位前沿的光的传播到第二端。 单模区域的明显更小的锥度允许保持单模操作的维持,同时减少传播梁在第二端面处的光密度。