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    • 1. 发明授权
    • Intergrated semiconductor component for high-frequency measurement and use thereof
    • 用于高频测量和使用的集成半导体元件
    • US07109917B2
    • 2006-09-19
    • US10494660
    • 2002-08-16
    • Ewald SchmidtHeinz PfizenmaierHans IrionJuergen Hasch
    • Ewald SchmidtHeinz PfizenmaierHans IrionJuergen Hasch
    • G01S7/28G01S13/93
    • H03B9/14G01S7/032H01L23/66H01L29/864H01L2224/16145H01L2924/01068H01L2924/12032H01Q9/0435H01Q19/062H01Q23/00H03B9/147H01L2924/00
    • It is provided that the semiconductor component is a component of a semiconductor circuit (10) comprising a first silicon layer (12), an adjoining silicon dioxide layer (insulating layer (14)) and a subsequent further silicon layer (structured layer (16)) (SOI wafer), and the semiconductor component comprises an IMPATT oscillator (30), having a resonator (24) which includes a metallized cylinder (18) of silicon, disposed in the structured layer (16); a coupling disk (28) covering the cylinder (18) in the region of the first layer (12); and an IMPATT diode (32), communicating with the cylinder (18) of the resonator (24) via a recess (38) in the coupling disk (28); and a reference oscillator (46) of lower frequency, having a resonator (24) which includes a metal cylinder (18) of silicon, disposed in the structured layer (16), and coupling disk (28) covering the cylinder in the region of the first layer (12); and a microwave conductor, communicating with the cylinder (18) of the resonator (24) via a recess (38) in the coupling disk (28), and the reference oscillator, via an active oscillator circuit (58), serves the purpose of frequency stabilization of the IMPATT oscillator (30); with integrated Schottky diodes; and a transmitting and receiving antenna (49).
    • 提供了半导体部件是包括第一硅层(12),邻接的二氧化硅层(绝缘层(14))和随后的另外的硅层(结构层(16))的半导体电路(10)的部件, )(SOI晶片),并且所述半导体部件包括具有设置在所述结构化层(16)中的包括硅的金属化圆柱体(18)的谐振器(24)的IMPATT振荡器(30)。 在所述第一层(12)的区域中覆盖所述圆筒(18)的联接盘(28); 和通过所述耦合盘(28)中的凹槽(38)与所述谐振器(24)的所述气缸(18)连通的IMPATT二极管(32)。 和具有较低频率的参考振荡器(46),具有设置在所述结构化层(16)中的包括硅的金属圆筒(18)的谐振器(24)和覆盖所述圆筒的耦合盘(28) 第一层(12); 和经由有源振荡电路(58)经由耦合盘(28)中的凹槽(38)与谐振器(24)的气缸(18)连通的微波导体,以及基准振荡器,用于 IMPATT振荡器(30)的频率稳定; 集成肖特基二极管; 和发射和接收天线(49)。
    • 4. 发明授权
    • Antenna array for a radar transceiver and circuit configuration for supplying an antenna array of such a radar transceiver
    • 用于雷达收发器的天线阵列和用于提供这种雷达收发器的天线阵列的电路配置
    • US08390521B2
    • 2013-03-05
    • US12808079
    • 2008-10-21
    • Juergen HaschEwald Schmidt
    • Juergen HaschEwald Schmidt
    • H01Q1/38H01Q19/10G01S13/00
    • H01Q1/3233H01Q3/30H01Q9/0414H01Q9/0421H01Q19/062H01Q25/02
    • An antenna array for radar transceivers, in particular for ascertaining distance and/or speed in the surroundings of vehicles, a first antenna part being situated on a carrier and a second antenna part being situated on another carrier situated at a distance from the first. The first antenna part has two generally rectangular primary exciter patches which adjoin each other on one edge, where they are short-circuited toward ground, two primary exciter patches have two separate supply lines, and the second antenna part comprises two mutually separated rectangular secondary exciter patches, which partially cover the primary exciter patches and which have, in the region of the ground short-circuit of the primary exciter patches, in the beam direction, a distance from each other that at least exposes the ground short-circuit.
    • 一种用于雷达收发器的天线阵列,特别是用于确定车辆周围的距离和/或速度,第一天线部分位于载体上,第二天线部分位于位于与第一天线相距一定距离的另一个载波上。 第一天线部分具有两个通常矩形的主激励器片,其一个边缘彼此相邻,在那里它们被短路到地,两个主激励器片具有两个单独的电源线,并且第二天线部分包括两个相互分离的矩形次级激励器 贴片,其部分地覆盖主激励器贴片,并且在主激励器贴片的接地短路区域中在波束方向上彼此相距至少暴露接地短路的距离。
    • 6. 发明授权
    • Device for the transmission and /or reception of radar beams
    • 用于发射和/或接收雷达波束的装置
    • US06759987B2
    • 2004-07-06
    • US10240586
    • 2002-10-02
    • Ewald SchmidtHeinz PfizenmaierHans IrionJuergen Hasch
    • Ewald SchmidtHeinz PfizenmaierHans IrionJuergen Hasch
    • H01Q138
    • H01Q1/526G01S7/03G01S13/888H01Q9/0407
    • The device has a printed-circuit board (5), on one side of which at least one antenna (1) is located and, on the other side of which electrical circuits (3) are located. An electromagnetic shield between the antenna (1) and the electrical circuits (3) is realized in a manner that is simple with regard for production engineering by locating a feeder network (13, 15)—developed using a coplanar circuit technique and with which the at least one antenna (1) is contacted—on the antenna-side surface of the printed-circuit board (5), and by covering the antenna-side surface of the printed-circuit board (5) with the connected-to-ground outer conductor (45) of the coplanar circuit to such an extent that the required shield between the antenna (1) and the electrical circuits (3) is produced as a result.
    • 该装置具有印刷电路板(5),其一侧位于至少一个天线(1),并且其另一侧设有电路(3)。 天线(1)和电路(3)之间的电磁屏蔽是通过定位使用共面电路技术开发的馈电网络(13,15)而以生产工程简单的方式实现的,并且 至少一个天线(1)与印刷电路板(5)的天线侧表面接触,并且通过用连接到地面的方式覆盖印刷电路板(5)的天线侧表面 外部导体(45),从而产生天线(1)和电路(3)之间所需的屏蔽。
    • 10. 发明申请
    • Intergrated semiconductor component for high-frequency measurement and use thereof
    • 用于高频测量和使用的集成半导体元件
    • US20050001632A1
    • 2005-01-06
    • US10494660
    • 2002-08-16
    • Ewald SchmidtHeinz PfizenmaierHans IrionJuergen Hasch
    • Ewald SchmidtHeinz PfizenmaierHans IrionJuergen Hasch
    • H01L21/822G01S7/03G01S13/08H01L23/66H01L27/04H01L29/864H01P7/04H01Q9/04H01Q19/06H01Q23/00H03B9/14G01R27/04G01R27/32
    • H03B9/14G01S7/032H01L23/66H01L29/864H01L2224/16145H01L2924/01068H01L2924/12032H01Q9/0435H01Q19/062H01Q23/00H03B9/147H01L2924/00
    • The invention relates to an integrated semiconductor component for high-frequency measurements and to the use thereof. It is provided that the semiconductor component is a component of a semiconductor circuit (10) comprising a first silicon layer (12), an adjoining silicon dioxide layer (insulating layer (14)) and a subsequent further silicon layer (structured layer (16)) (SOI wafer), and the semiconductor component comprises an IMPATT oscillator (30), having a resonator (24) which includes a metallized cylinder (18) of silicon, disposed in the structured layer (16); a coupling disk (28) covering the cylinder (18) in the region of the first layer (12); and an IMPATT diode (32), communicating with the cylinder (18) of the resonator (24) via a recess (38) in the coupling disk (28); and a reference oscillator (46) of lower frequency, having a resonator (24) which includes a metal cylinder (18) of silicon, disposed in the structured layer (16), and coupling disk (28) covering the cylinder in the region of the first layer (12); and a microwave conductor, communicating with the cylinder (18) of the resonator (24) via a recess (38) in the coupling disk (28), and the reference oscillator, via an active oscillator circuit (58), serves the purpose of frequency stabilization of the IMPATT oscillator (30); with integrated Schottky diodes; and a transmitting and receiving antenna (49).
    • 本发明涉及用于高频测量的集成半导体元件及其用途。 提供了半导体部件是包括第一硅层(12),邻接的二氧化硅层(绝缘层(14))和随后的另外的硅层(结构层(16))的半导体电路(10)的部件, )(SOI晶片),并且所述半导体部件包括具有设置在所述结构化层(16)中的包括硅的金属化圆柱体(18)的谐振器(24)的IMPATT振荡器(30)。 在所述第一层(12)的区域中覆盖所述圆筒(18)的联接盘(28); 和通过所述耦合盘(28)中的凹槽(38)与所述谐振器(24)的所述气缸(18)连通的IMPATT二极管(32)。 和具有较低频率的参考振荡器(46),具有设置在所述结构化层(16)中的包括硅的金属圆筒(18)的谐振器(24)和覆盖所述圆筒的耦合盘(28) 第一层(12); 和经由有源振荡电路(58)经由耦合盘(28)中的凹槽(38)与谐振器(24)的气缸(18)连通的微波导体,以及基准振荡器,用于 IMPATT振荡器(30)的频率稳定; 集成肖特基二极管; 和发射和接收天线(49)。