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1. 再颁专利

USRE41363E1 Thin film transistor substrate 有权
标题翻译：薄膜晶体管基板
公开(公告)号：USRE41363E1
公开(公告)日：2010-06-01
申请号：US11296847
申请日：2005-12-08
申请人： Jueng-gil Lee , Jung-ho Lee , Hyo-rak Nam
发明人： Jueng-gil Lee , Jung-ho Lee , Hyo-rak Nam
IPC分类号： H01L29/40
CPC分类号： G02F1/136286 , G02F1/1345 , G02F1/13458 , G02F1/136227 , G02F1/1368 , G02F2001/13629 , H01L21/28008 , H01L23/4827 , H01L27/12 , H01L27/124 , H01L27/1288 , H01L29/42384 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： A TFT substrate includes a gate electrode and gate pad on a transparent substrate, an insulating layer on the gate electrode and exposing a portion of the gate pad, a semiconductor film on the insulating layer and the gate electrode, an impurity doped semiconductor film on the semiconductor film, the impurity doped semiconductor film contacting a top surface of the semiconductor film over the gate electrode, source and drain electrodes and a data line on a portion of the impurity doped semiconductor film, a protection film on the source and drain electrodes and the insulating layer in a gate pad area, the protection film having a contact hole over the drain electrode exposing a top surface of the gate pad, a first pixel electrode electrically connected to the drain electrode on the protection film, and a second pixel electrode directly connected to the exposed top surface of the gate pad.
摘要翻译： TFT基板包括在透明基板上的栅电极和栅极焊盘，栅电极上的绝缘层和露出栅极焊盘的一部分，绝缘层上的半导体膜和栅电极，掺杂半导体膜上的杂质掺杂半导体膜半导体膜，杂质掺杂半导体膜与栅电极上的半导体膜的顶表面接触，源极和漏极以及杂质掺杂半导体膜的一部分上的数据线，源极和漏极上的保护膜和绝缘层，所述保护膜在所述漏电极上具有暴露出所述栅极焊盘的顶面的接触孔，与所述保护膜上的所述漏电极电连接的第一像素电极，以及直接连接到所述第二像素电极的第二像素电极到露出的栅极顶表面。

2. 发明授权

US06331443B1 Method for manufacturing a liquid crystal display 有权
标题翻译：液晶显示器的制造方法
公开(公告)号：US06331443B1
公开(公告)日：2001-12-18
申请号：US09443386
申请日：1999-11-19
申请人： Jueng-gil Lee , Jung-ho Lee , Hyo-rak Nam
发明人： Jueng-gil Lee , Jung-ho Lee , Hyo-rak Nam
IPC分类号： H01L2100
CPC分类号： G02F1/136286 , G02F1/1345 , G02F1/13458 , G02F1/136227 , G02F1/1368 , G02F2001/13629 , H01L21/28008 , H01L23/4827 , H01L27/12 , H01L27/124 , H01L27/1288 , H01L29/42384 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a liquid crystal display is provided. The method includes the steps of forming a gate electrode and a gate pad by sequentially depositing a first metal film and a second metal film on a substrate of a TFT area and a pad area, respectively, by a first photolithography process, forming an insulating film on the entire surface of the substrate on which the gate electrode and the gate pad are formed, forming a semiconductor film pattern on the insulating film of the TFT area using a second photolithography process, forming a source electrode and a drain electrode composed of a third metal film in the TFT area using a third photolithography process, forming a protection film pattern which exposes a portion of the drain electrode and a portion of the pad on the substrate on which the source electrode and the drain electrode are formed using a fourth photolithography process, and forming a pixel electrode connected to the drain electrode and the gate pad on the substrate on which the protection film pattern is formed using a fifth photolithography process. By using this method it is possible to reduce the number of photolithography steps required for manufacture and to prevent a battery effect and generation of a hillock in the resulting structure.
摘要翻译：提供一种制造液晶显示器的方法。该方法包括以下步骤：分别通过第一光刻工艺在TFT区域和焊盘区域的衬底上依次沉积第一金属膜和第二金属膜来形成栅电极和栅极焊盘，形成绝缘膜在其上形成有栅电极和栅极焊盘的基板的整个表面上，使用第二光刻工艺在TFT区域的绝缘膜上形成半导体膜图案，形成源电极和漏极，其由第三使用第三光刻工艺在TFT区域中形成金属膜，形成保护膜图案，该保护膜图案使用第四光刻工艺在其上形成源电极和漏电极的基板上露出部分漏电极和焊盘的一部分并且形成连接到衬底上的漏电极和栅极焊盘的像素电极，其上形成有保护膜图案的基板 h光刻工艺。通过使用该方法，可以减少制造所需的光刻步骤的数量，并且可以减少所产生的结构中的电池效应和产生小丘。

3. 发明授权

US06661026B2 Thin film transistor substrate 有权
标题翻译：薄膜晶体管基板
公开(公告)号：US06661026B2
公开(公告)日：2003-12-09
申请号：US10032443
申请日：2002-01-02
申请人： Jueng-gil Lee , Jung-ho Lee , Hyo-rak Nam
发明人： Jueng-gil Lee , Jung-ho Lee , Hyo-rak Nam
IPC分类号： H01L2184
CPC分类号： G02F1/136286 , G02F1/1345 , G02F1/13458 , G02F1/136227 , G02F1/1368 , G02F2001/13629 , H01L21/28008 , H01L23/4827 , H01L27/12 , H01L27/124 , H01L27/1288 , H01L29/42384 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： A TFT substrate includes a gate electrode and gate pad on a transparent substrate, an insulating layer on the gate electrode and exposing a portion of the gate pad, a semiconductor film on the insulating layer and the gate electrode, an impurity doped semiconductor film on the semiconductor film, the impurity doped semiconductor film contacting a top surface of the semiconductor film over the gate electrode, source and drain electrodes and a data line on a portion of the impurity doped semiconductor film, a protection film on the source and drain electrodes and the insulating layer in a gate pad area, the protection film having a contact hole over the drain electrode exposing a top surface of the gate pad, a first pixel electrode electrically connected to the drain electrode on the protection film, and a second pixel electrode directly connected to the exposed top surface of the gate pad.
摘要翻译： TFT基板包括在透明基板上的栅电极和栅极焊盘，栅电极上的绝缘层和露出栅极焊盘的一部分，绝缘层上的半导体膜和栅电极，掺杂半导体膜上的杂质掺杂半导体膜半导体膜，杂质掺杂半导体膜与栅电极上的半导体膜的顶表面接触，源极和漏极以及杂质掺杂半导体膜的一部分上的数据线，源极和漏极上的保护膜和绝缘层，所述保护膜在所述漏电极上具有暴露出所述栅极焊盘的顶面的接触孔，与所述保护膜上的所述漏电极电连接的第一像素电极，以及直接连接到所述第二像素电极的第二像素电极到露出的栅极顶表面。

4. 发明授权

US06339230B1 Method for manufacturing a liquid crystal display 有权
公开(公告)号：US06339230B1
公开(公告)日：2002-01-15
申请号：US09391454
申请日：1999-09-08
申请人： Jueng-gil Lee , Jung-ho Lee , Hyo-rak Nam
发明人： Jueng-gil Lee , Jung-ho Lee , Hyo-rak Nam
IPC分类号： H01L2184
CPC分类号： G02F1/136286 , G02F1/1345 , G02F1/13458 , G02F1/136227 , G02F1/1368 , G02F2001/13629 , H01L21/28008 , H01L23/4827 , H01L27/12 , H01L27/124 , H01L27/1288 , H01L29/42384 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a liquid crystal display is provided. The method includes the steps of forming a gate electrode and a gate pad by sequentially depositing a first metal film and a second metal film on a substrate of a TFT area and a pad area, respectively, by a first photolithography process, forming an insulating film on the entire surface of the substrate on which the gate electrode and the gate pad are formed, forming a semiconductor film pattern on the insulating film of the TFT area using a second photolithography process, forming a source electrode and a drain electrode composed of a third metal film in the TFT area using a third photolithography process, forming a protection film pattern which exposes a portion of the drain electrode and a portion of the gate pad on the substrate on which the source electrode and the drain electrode are formed using a fourth photolithography process, and forming a pixel electrode connected to the drain electrode and the gate pad on the substrate on which the protection film pattern is formed using a fifth photolithography process. By using this method it is possible to reduce the number of photolithography steps required for manufacture and to prevent a battery effect and generation of a hillock in the resulting structure.

5. 发明授权

US6008065A Method for manufacturing a liquid crystal display 失效
公开(公告)号：US6008065A
公开(公告)日：1999-12-28
申请号：US754644
申请日：1996-11-21
申请人： Jueng-gil Lee , Jung-ho Lee , Hyo-rak Nam
发明人： Jueng-gil Lee , Jung-ho Lee , Hyo-rak Nam
IPC分类号： G02F1/1343 , G02F1/1345 , G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/28 , H01L21/3205 , H01L21/336 , H01L21/768 , H01L23/482 , H01L23/52 , H01L27/12 , H01L29/423 , H01L29/49 , H01L29/786 , H01L21/00
CPC分类号： G02F1/136286 , G02F1/1345 , G02F1/13458 , G02F1/1368 , H01L21/28008 , H01L23/4827 , H01L27/12 , H01L27/124 , H01L27/1288 , H01L29/42384 , H01L29/4908 , G02F1/136227 , G02F2001/13629 , H01L2924/0002
摘要： A method for manufacturing a liquid crystal display is provided. The method includes the steps of forming a gate electrode and a gate pad by sequentially depositing a first metal film and a second metal film on a substrate of a TFT area and a pad area, respectively, by a first photolithography process, forming an insulating film on the entire surface of the substrate on which the gate electrode and the gate pad are formed, forming a semiconductor film pattern on the insulating film of the TFT area using a second photolithography process, forming a source electrode and a drain electrode composed of a third metal film in the TFT area using a third photolithography process, forming a protection film pattern which exposes a portion of the drain electrode and a portion of the gate pad on the substrate on which the source electrode and the drain electrode are formed using a fourth photolithography process, and forming a pixel electrode connected to the drain electrode and the gate pad on the substrate on which the protection film pattern is formed using a fifth photolithography process. By using this method it is possible to reduce the number of photolithography steps required for manufacture and to prevent a battery effect and generation of a hillock in the resulting structure.

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