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1. 发明申请

US20090212010A1 PLASMA ETCHING CARBONACEOUS LAYERS WITH SULFUR-BASED ETCHANTS 失效
标题翻译：等离子体蚀刻碳酸钙层与基于硫的蚀刻物
公开(公告)号：US20090212010A1
公开(公告)日：2009-08-27
申请号：US12035289
申请日：2008-02-21
申请人： Judy Wang , Shawming Ma , Chang-Lin Hsieh , Bryan Liao , Jie Zhou , Hun Sang Kim
发明人： Judy Wang , Shawming Ma , Chang-Lin Hsieh , Bryan Liao , Jie Zhou , Hun Sang Kim
IPC分类号： C23F1/00
CPC分类号： H01L21/31116 , H01L21/31138
摘要： Etching of carbonaceous layers with an etchant gas mixture including molecular oxygen (O2) and a gas including a carbon sulfur terminal ligand. A high RF frequency source is employed in certain embodiments to achieve a high etch rate with high selectivity to inorganic dielectric layers. In certain embodiments, the etchant gas mixture includes only the two components, COS and O2, but in other embodiments additional gases, such as at least one of molecular nitrogen (N2), carbon monoxide (CO) or carbon dioxide (CO2) may be further employed to etch to carbonaceous layers.
摘要翻译：用包含分子氧（O 2）和包含碳硫末端配体的气体的蚀刻剂气体混合物蚀刻碳质层。在某些实施方案中采用高RF频率源以实现对无机介电层的高选择性的高蚀刻速率。在某些实施方案中，蚀刻剂气体混合物仅包括两种组分COS和O 2，但在其它实施方案中，另外的气体，例如分子氮（N 2），一氧化碳（CO）或二氧化碳（CO 2）中的至少一种可以是进一步用于蚀刻到碳质层。

2. 发明授权

US08133819B2 Plasma etching carbonaceous layers with sulfur-based etchants 失效
标题翻译：用硫基蚀刻剂等离子体蚀刻碳质层
公开(公告)号：US08133819B2
公开(公告)日：2012-03-13
申请号：US12035289
申请日：2008-02-21
申请人： Judy Wang , Shawming Ma , Chang-Lin Hsieh , Bryan Liao , Jie Zhou , Hun Sang Kim
发明人： Judy Wang , Shawming Ma , Chang-Lin Hsieh , Bryan Liao , Jie Zhou , Hun Sang Kim
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01L21/31138
摘要： Etching of carbonaceous layers with an etchant gas mixture including molecular oxygen (O2) and a gas including a carbon sulfur terminal ligand. A high RF frequency source is employed in certain embodiments to achieve a high etch rate with high selectivity to inorganic dielectric layers. In certain embodiments, the etchant gas mixture includes only the two components, COS and O2, but in other embodiments additional gases, such as at least one of molecular nitrogen (N2), carbon monoxide (CO) or carbon dioxide (CO2) may be further employed to etch to carbonaceous layers.
摘要翻译：用包含分子氧（O 2）和包含碳硫末端配体的气体的蚀刻剂气体混合物蚀刻碳质层。在某些实施方案中采用高RF频率源以实现对无机介电层的高选择性的高蚀刻速率。在某些实施方案中，蚀刻剂气体混合物仅包括两种组分COS和O 2，但在其它实施方案中，另外的气体，例如分子氮（N 2），一氧化碳（CO）或二氧化碳（CO 2）中的至少一种可以是进一步用于蚀刻到碳质层。

3. 发明申请

US20120048467A1 COMPONENT TEMPERATURE CONTROL BY COOLANT FLOW CONTROL AND HEATER DUTY CYCLE CONTROL 有权
标题翻译：通过冷却液流量控制和加热器占空比控制的组件温度控制
公开(公告)号：US20120048467A1
公开(公告)日：2012-03-01
申请号：US13040149
申请日：2011-03-03
申请人： Chetan Mahadeswaraswamy , Kartik Ramaswamy , Bryan Liao , Sergio Shoji , Duy D. Nguyen , Hamid Noorbakhsh , David Palagashvili
发明人： Chetan Mahadeswaraswamy , Kartik Ramaswamy , Bryan Liao , Sergio Shoji , Duy D. Nguyen , Hamid Noorbakhsh , David Palagashvili
IPC分类号： C23F1/08 , F28F27/00 , G05D7/06 , G05D23/19 , B05C11/00 , C23C16/52
CPC分类号： G05D23/19 , G05B15/02 , H01J37/32522 , H01J37/32724 , H01J37/32908 , H01J37/3299 , H01L21/67248
摘要： Methods and systems for controlling temperatures in plasma processing chamber for a wide range of setpoint temperatures and reduced energy consumption. Temperature control is coordinated between a coolant liquid loop and a heat source by a control algorithm implemented by the plasma processing module controller. The control algorithm may completely stop the flow of coolant liquid to a temperature-controlled component in response to a feedback signal indicating an actual temperature is below the setpoint temperature. The control algorithm may further be based at least in part on a feedforward control signal derived from a plasma power or change in plasma power input into the processing chamber during process recipe execution.
摘要翻译：用于控制等离子体处理室中的温度的方法和系统，用于广泛的设定点温度和降低的能量消耗。通过等离子体处理模块控制器实现的控制算法，在冷却液回路和热源之间进行温度控制。控制算法可以响应于指示实际温度低于设定点温度的反馈信号，完全停止冷却剂液体流向温度控制部件的流动。控制算法还可以至少部分地基于从等离子体功率导出的前馈控制信号或在处理配方执行期间输入到处理室中的等离子体功率的改变。

4. 发明授权

US08880227B2 Component temperature control by coolant flow control and heater duty cycle control 有权
标题翻译：组件温度控制由冷却液流量控制和加热器占空比控制
公开(公告)号：US08880227B2
公开(公告)日：2014-11-04
申请号：US13040149
申请日：2011-03-03
申请人： Chetan Mahadeswaraswamy , Kartik Ramaswamy , Bryan Liao , Sergio Shoji , Duy D. Nguyen , Hamid Noorbakhsh , David Palagashvili
发明人： Chetan Mahadeswaraswamy , Kartik Ramaswamy , Bryan Liao , Sergio Shoji , Duy D. Nguyen , Hamid Noorbakhsh , David Palagashvili
IPC分类号： G06F19/00 , H01J37/32 , H01L21/67
CPC分类号： G05D23/19 , G05B15/02 , H01J37/32522 , H01J37/32724 , H01J37/32908 , H01J37/3299 , H01L21/67248
摘要： Methods and systems for controlling temperatures in plasma processing chamber for a wide range of setpoint temperatures and reduced energy consumption. Temperature control is coordinated between a coolant liquid loop and a heat source by a control algorithm implemented by the plasma processing module controller. The control algorithm may completely stop the flow of coolant liquid to a temperature-controlled component in response to a feedback signal indicating an actual temperature is below the setpoint temperature. The control algorithm may further be based at least in part on a feedforward control signal derived from a plasma power or change in plasma power input into the processing chamber during process recipe execution.
摘要翻译：用于控制等离子体处理室中的温度的方法和系统，用于广泛的设定点温度和降低的能量消耗。通过等离子体处理模块控制器实现的控制算法，在冷却液回路和热源之间进行温度控制。控制算法可以响应于指示实际温度低于设定点温度的反馈信号，完全停止冷却剂液体流向温度控制部件的流动。控制算法还可以至少部分地基于从等离子体功率导出的前馈控制信号或在处理配方执行期间输入到处理室中的等离子体功率的改变。

5. 发明授权

US08513889B2 Methods and apparatus for tuning matching networks 有权
标题翻译：调整匹配网络的方法和装置
公开(公告)号：US08513889B2
公开(公告)日：2013-08-20
申请号：US12899048
申请日：2010-10-06
申请人： Chunlei Zhang , Sergio F. Shoji , Andrey Semenin , Kartik Ramaswamy , James P. Cruse , Bryan Liao
发明人： Chunlei Zhang , Sergio F. Shoji , Andrey Semenin , Kartik Ramaswamy , James P. Cruse , Bryan Liao
IPC分类号： H03H7/38
CPC分类号： H03H7/40 , H01J37/32183 , H01J37/32935 , H05H1/46
摘要： Methods and apparatus for tuning matching networks are provided herein. A method of tuning a matching network includes providing a matching network coupling an RF source to a load, the matching network having a tunable element disposed at a first set point; increasing a value of the tunable element by a first step above the first set point; sensing a first adjusted value of a reflected RF power; decreasing the value of the tunable element by the first step below the first set point; sensing a second adjusted value of the reflected RF power; comparing the first and the second adjusted values of the reflected RF power; and moving the tunable element to a second set point that corresponds to a position having a lowest adjusted value of the reflected RF power. The method may be repeated until the reflected RF power falls within an acceptable reflected RF power range.
摘要翻译：本文提供了用于调整匹配网络的方法和装置。调整匹配网络的方法包括提供将RF源耦合到负载的匹配网络，所述匹配网络具有设置在第一设定点处的可调谐元件; 通过在第一设定点之上的第一步增加可调元件的值; 感测反射RF功率的第一调整值; 将可调谐元件的值降低到低于第一设定点的第一步; 感测反射RF功率的第二调整值; 比较反射RF功率的第一和第二调整值; 以及将所述可调元件移动到对应于具有所述反射RF功率的最低调整值的位置的第二设定点。可以重复该方法，直到反射的RF功率落在可接受的反射RF功率范围内。

6. 发明授权

US08404598B2 Synchronized radio frequency pulsing for plasma etching 有权
公开(公告)号：US08404598B2
公开(公告)日：2013-03-26
申请号：US12851606
申请日：2010-08-06
申请人： Bryan Liao , Katsumasa Kawasaki , Yashaswini Pattar , Sergio Fukuda Shoji , Duy D. Nguyen , Kartik Ramaswamy , Ankur Agarwal , Phillip Stout , Shahid Rauf
发明人： Bryan Liao , Katsumasa Kawasaki , Yashaswini Pattar , Sergio Fukuda Shoji , Duy D. Nguyen , Kartik Ramaswamy , Ankur Agarwal , Phillip Stout , Shahid Rauf
IPC分类号： H01L21/302
CPC分类号： C23F1/00 , H01J37/32082 , H01J37/32146 , H01J37/32165 , H01L21/31116
摘要： Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized; adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and etching the dielectric layer with the plasma.

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