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1. 发明授权

US06982223B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06982223B2
公开(公告)日：2006-01-03
申请号：US10413944
申请日：2003-04-15
申请人： Ju-Wan Kim , Shin-Hye Kim , Ju-Bum Lee , Hyong-Soo Kim
发明人： Ju-Wan Kim , Shin-Hye Kim , Ju-Bum Lee , Hyong-Soo Kim
IPC分类号： H01L21/4763 , H01L21/31
CPC分类号： H01L21/02129 , H01L21/02271 , H01L21/02315 , H01L21/02337 , H01L21/31625 , H01L21/76826 , H01L21/76829 , H01L21/76837
摘要： A method of manufacturing a semiconductor device by which a generation of a void is prevented after depositing an interlayer dielectric material. First, a plurality of conductive patterns are formed on a substrate and then, a capping insulation layer is formed on the conductive patterns. The capping insulation layer is treated with plasma, and an interlayer dielectric material is deposited on the plasma treated capping insulation layer. The dependency of the interlayer dielectric on the type of material and form of an underlying layer is reduced to improve a gap-filling characteristic, especially for a gap having a high aspect ratio. An improved gap-filling characteristic is accomplished and the formation of all or substantially all of the voids from forming in a gap is prevented even though an interlayer dielectric is deposited under a conventional deposition conditions.
摘要翻译：一种制造半导体器件的方法，其中在沉积层间电介质材料之后防止产生空隙。首先，在基板上形成多个导电图案，然后在导电图案上形成封盖绝缘层。用等离子体处理封盖绝缘层，并且在等离子体处理的封盖绝缘层上沉积层间电介质材料。层间电介质对材料类型和下层的形式的依赖性被降低以改善间隙填充特性，特别是对于具有高纵横比的间隙。实现了改进的间隙填充特性，并且即使在常规沉积条件下沉积层间电介质，也可防止在间隙中形成全部或基本上所有空隙的形成。

2. 发明授权

US06328043B1 Filtering technique for CVD chamber process gases 失效
标题翻译： CVD室工艺气体的过滤技术
公开(公告)号：US06328043B1
公开(公告)日：2001-12-11
申请号：US09315340
申请日：1999-05-20
申请人： Young-Roe Kim , Hyun-Young Kim , Hyun-kuk Ko , Kyung-Burn Koo , Ju-Wan Kim , Hyong-Soo Kim , Dong-chan Park , Dong-Geun Na
发明人： Young-Roe Kim , Hyun-Young Kim , Hyun-kuk Ko , Kyung-Burn Koo , Ju-Wan Kim , Hyong-Soo Kim , Dong-chan Park , Dong-Geun Na
IPC分类号： B08B500
CPC分类号： C23C16/4408 , C23C16/42 , C23C16/4405 , Y10S438/905
摘要： A method and an apparatus for removing particulate contaminant are provided in order to ensure high purity during a tungsten suicide deposition process. The method for removing particulate contaminant in tungsten silicide deposition process using SiH4 as silicon source gas and NF3 as cleaning gas, includes purging a carrier gas line for an SiH4 silicon source gas to remove the contaminant in the chamber and carrier gas line when the carrier gas is supplied with the chamber, and the NF3 cleaning gas is supplied to the chamber to form plasma. After a plasma cleaning, the gas line flowing reaction gas responding to the SiH4 is purged to remove the contaminant in the chamber and the reaction gas line. As a result, any particulate contaminant is removed or remains at a minimum level that has no effect on the tungsten silicide deposition process.
摘要翻译：提供了一种用于除去微粒污染物的方法和装置，以确保在硅化钨沉积工艺期间的高纯度。使用SiH4作为硅源气体和NF 3作为清洁气体的去除硅化钨沉积工艺中的微粒污染物的方法包括：在载气中除去用于SiH 4硅源气体的载气管线以除去腔室和载气管线中的污染物供给室，并且将NF 3清洁气体供应到室以形成等离子体。在等离子体清洗之后，吹扫响应于SiH 4的气体管线流动的反应气体以除去腔室和反应气体管线中的污染物。结果，任何颗粒污染物被去除或保持在对硅化钨沉积过程没有影响的最低水平。

3. 发明申请

US20120088253A1 METHOD FOR MEASURING GLYCATED HEMOGLOBIN 有权
标题翻译：测量糖化血红蛋白的方法
公开(公告)号：US20120088253A1
公开(公告)日：2012-04-12
申请号：US13329689
申请日：2011-12-19
申请人： Byeong-Woo Bae , Sung-Dong Lee , Hyong-Soo Kim
发明人： Byeong-Woo Bae , Sung-Dong Lee , Hyong-Soo Kim
IPC分类号： G01N33/72
CPC分类号： G01N33/723
摘要： Provided is a method for measuring glycated hemoglobin. The method includes a hemolysis step of hemolyzing a blood sample with a hemolysate, a reaction step of reacting the hemolyzed blood sample with bead conjugates in which beads are conjugated with glycated hemoglobin binding materials, a first measuring step of measuring the amount of total hemoglobin in blood, an isolation step of isolating normal hemoglobin from the glycated hemoglobin conjugated with the bead conjugates, a second measuring step of measuring the amount of glycated hemoglobin in blood, and a calculation step of calculating the concentration of glycated hemoglobin in the blood sample based on the measured amounts of total hemoglobin and glycated hemoglobin in the blood sample.
摘要翻译：提供了测定糖化血红蛋白的方法。该方法包括使溶血液溶血血液样品的溶血步骤，使溶血的血液样品与珠粒与糖化血红蛋白结合材料共轭的珠缀合物反应的反应步骤，测量总血红蛋白量的第一测量步骤血液，从与珠缀合物缀合的糖化血红蛋白分离正常血红蛋白的分离步骤，测定血液中糖化血红蛋白量的第二测定步骤，计算血液样品中糖化血红蛋白浓度的计算步骤，基于血样中总血红蛋白和糖化血红蛋白的测定量。

4. 发明授权

US08557590B2 Method for measuring glycated hemoglobin 有权
标题翻译：测定糖化血红蛋白的方法
公开(公告)号：US08557590B2
公开(公告)日：2013-10-15
申请号：US13329689
申请日：2011-12-19
申请人： Byeong-Woo Bae , Sung-Dong Lee , Hyong-Soo Kim
发明人： Byeong-Woo Bae , Sung-Dong Lee , Hyong-Soo Kim
IPC分类号： G01N33/72 , C12M1/34 , G01N33/543 , G01N1/18
CPC分类号： G01N33/723
摘要： A method for measuring glycated hemoglobin includes hemolyzing a blood sample with a hemolysate; reacting the hemolyzed blood sample with bead conjugates in which beads are conjugated with glycated hemoglobin binding materials; measuring the amount of total hemoglobin in the reacted blood sample; isolating normal hemoglobin from the glycated hemoglobin conjugated with the bead conjugates; measuring the amount of glycated hemoglobin isolated from the normal hemoglobin; and determining the percentage of the glycated hemoglobin in the blood sample on the basis of the measured amounts of total hemoglobin and glycated hemoglobin. The isolation of normal hemoglobin is performed by absorbing the normal hemoglobin using an absorption pad that is a porous pad having pores, each of which has a size greater than the size of the normal hemoglobin and smaller than the size of the bead.
摘要翻译：测定糖化血红蛋白的方法包括用溶血液溶血样品; 使溶血的血液样品与其中珠粒与糖化血红蛋白结合材料缀合的珠缀合物反应; 测量反应血样中总血红蛋白的量; 从与珠缀合物缀合的糖化血红蛋白分离正常血红蛋白; 测量从正常血红蛋白分离的糖化血红蛋白的量; 并且根据所测量的总血红蛋白和糖化血红蛋白的量确定血液样品中糖化血红蛋白的百分比。正常血红蛋白的分离是通过吸收正常血红蛋白来进行的，该吸收垫是具有孔的多孔垫的吸收垫，每个孔具有大于正常血红蛋白的尺寸并且小于珠的尺寸。

5. 发明授权

US07988873B2 Method of forming a mask pattern for fabricating a semiconductor device 有权
标题翻译：形成用于制造半导体器件的掩模图案的方法
公开(公告)号：US07988873B2
公开(公告)日：2011-08-02
申请号：US11768748
申请日：2007-06-26
申请人： Hyong-Soo Kim , Sang-Hyeop Lee
发明人： Hyong-Soo Kim , Sang-Hyeop Lee
IPC分类号： B44C1/22
CPC分类号： H01L21/0334
摘要： A method of forming a mask pattern for fabricating a semiconductor device. A first region and a second region, having an intersecting third region, are defined in the semiconductor substrate. An inorganic mask layer is etched in the first region to a predetermined thickness, and etched in the second region to another predetermined thickness. While the inorganic mask layer is etched in the first and second region, an organic mask layer is exposed in the third region. The organic mask layer exposed in the third region is removed to form a mask pattern. Consequently, double exposure is performed using the organic mask layer and the inorganic mask layer, so that a fine feature size that closely follows a desired layout can be formed, damage to the organic mask layer by ashing is prevented, and adhesiveness between the organic mask layer and the inorganic mask layer can be improved.
摘要翻译：一种形成用于制造半导体器件的掩模图案的方法。具有相交的第三区域的第一区域和第二区域被限定在半导体衬底中。将无机掩模层在第一区域中蚀刻到预定厚度，并在第二区域中蚀刻到另一预定厚度。当在第一和第二区域中蚀刻无机掩模层时，在第三区域中露出有机掩模层。去除在第三区域中暴露的有机掩模层以形成掩模图案。因此，使用有机掩模层和无机掩模层进行双重曝光，从而可以形成紧密地符合所需布局的精细特征尺寸，防止灰化对有机掩模层的损伤以及有机掩模之间的粘附性层和无机掩模层可以改善。

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