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    • 4. 发明授权
    • Apparatus and method of improving impedance matching between an RF signal and a multi- segmented electrode
    • 改善RF信号与多段电极之间的阻抗匹配的装置和方法
    • US07109788B2
    • 2006-09-19
    • US10469593
    • 2002-02-27
    • Jovan JevticAndrej Mitrovic
    • Jovan JevticAndrej Mitrovic
    • H03D3/02
    • H01J37/32082H01J37/32183
    • An apparatus and method of improving impedance matching between a RF signal and a multi-segmented electrode in a plasma reactor powered by the RF signal. The apparatus and method phase shifts the RF signal driving one or more electrode segment of the multi-segmented electrode, amplifies the RF signal, and matches an impedance of the RF signal with an impedance of the electrode segment, where the RF signal is modulated prior to matching of the impedance of the RF signal. The apparatus and method directionally couples an output of the matching of the impedance of the RF signal and the electrode segment, and adjusts the output of the matching of the impedance of the RF signal such that a directionally coupled output signal and a reference signal representing the RF signal at the output of the master RF oscillator produces a demodulated signal of minimal amplitude.
    • 一种改善由RF信号供电的等离子体反应器中的RF信号和多段电极之间的阻抗匹配的装置和方法。 该装置和方法相位移动驱动多分段电极的一个或多个电极段的RF信号,放大RF信号,并将RF信号的阻抗与电极段的阻抗匹配,其中RF信号先前被调制 以匹配RF信号的阻抗。 该装置和方法定向耦合RF信号和电极段的阻抗匹配的输出,并且调整RF信号的阻抗匹配的输出,使得定向耦合的输出信号和表示 在主RF振荡器的输出处的RF信号产生最小振幅的解调信号。
    • 7. 发明授权
    • Inductively coupled high-density plasma source
    • 电感耦合高密度等离子体源
    • US07482757B2
    • 2009-01-27
    • US10472553
    • 2002-03-25
    • Bill H. QuonJovan JevticSam AntleyEric J. Strang
    • Bill H. QuonJovan JevticSam AntleyEric J. Strang
    • H01J7/24
    • H01J37/321H01J37/32357H01J37/3266
    • A high-density plasma source (100) is disclosed. The source includes an annular insulating body (300) with an annular cavity (316) formed within. An inductor coil (340) serving as an antenna is arranged within the annular cavity and is operable to generate a first magnetic field within a plasma duct (60) interior region (72) and inductively couple to the plasma when the annular body is arranged to surround a portion of the plasma duct. A grounded conductive housing (400) surrounds the annular insulating body. An electrostatic shield (360) is arranged adjacent the inner surface of the insulating body and is grounded to the conductive housing. Upper and lower magnet rings (422 and 424) are preferably arranged adjacent the upper and lower surfaces of the annular insulating body outside of the conductive housing. A T-match network is in electrical communication with said inductor coil and is adapted to provide for efficient transfer of RF power from an RF power source to the plasma. At least one plasma source can be used to form a high-density plasma suitable for plasma processing of a workpiece residing in a plasma chamber in communication with the at least one source.
    • 公开了一种高密度等离子体源(100)。 源包括环形绝缘体(300),其内部形成有环形空腔(316)。 用作天线的电感线圈(340)布置在环形空腔内,并且可操作以在等离子体管道(60)内部区域(72)内产生第一磁场,并且当环形体布置成 围绕等离子体管道的一部分。 接地导电壳体(400)围绕环形绝缘体。 静电屏蔽(360)被布置成邻近绝缘体的内表面并且被接地到导电壳体。 上,下磁环(422和424)优选地布置成邻近导电外壳外的环形绝缘体的上表面和下表面。 T匹配网络与所述电感器线圈电连通,并且适于提供从RF功率源到等离子体的RF功率的有效传输。 可以使用至少一个等离子体源来形成适于等离子体处理高密度等离子体处理的工件,该工件位于与至少一个源连通的等离子体室中。
    • 8. 发明申请
    • Inductively coupled high-density plasma source
    • 电感耦合高密度等离子体源
    • US20050099133A1
    • 2005-05-12
    • US10472553
    • 2002-03-25
    • Bill QuonJovan JevticSam AntleyEric Strang
    • Bill QuonJovan JevticSam AntleyEric Strang
    • H05H1/46B01D53/70B01J19/08H01J7/24H01J37/32
    • H01J37/321H01J37/32357H01J37/3266
    • A high-density plasma source (100) is disclosed. The source includes an annular insulating body (300) with an annular cavity (316) formed within. An inductor coil (340) serving as an antenna is arranged within the annular cavity and is operable to generate a first magnetic field within a plasma duct (60) interior region (72) and inductively couple to the plasma when the annular body is arranged to surround a portion of the plasma duct. A grounded conductive housing (400) surrounds the annular insulating body. An electrostatic shield (360) is arranged adjacent the inner surface of the insulating body and is grounded to the conductive housing. Upper and lower magnet rings (422 and 424) are preferably arranged adjacent the upper and lower surfaces of the annular insulating body outside of the conductive housing. A T-match network is in electrical communication with said inductor coil and is adapted to provide for efficient transfer of RF power from an RF power source to the plasma. At least one plasma source can be used to form a high-density plasma suitable for plasma processing of a workpiece residing in a plasma chamber in communication with the at least one source.
    • 公开了一种高密度等离子体源(100)。 源包括环形绝缘体(300),其内部形成有环形空腔(316)。 用作天线的电感线圈(340)布置在环形空腔内,并且可操作以在等离子体管道(60)内部区域(72)内产生第一磁场,并且当环形体布置成 围绕等离子体管道的一部分。 接地导电壳体(400)围绕环形绝缘体。 静电屏蔽(360)被布置成邻近绝缘体的内表面并且被接地到导电壳体。 上,下磁环(422和424)优选地布置成邻近导电外壳外的环形绝缘体的上表面和下表面。 T匹配网络与所述电感器线圈电连通,并且适于提供从RF功率源到等离子体的RF功率的有效传输。 可以使用至少一个等离子体源来形成适于等离子体处理高密度等离子体处理的工件,该工件位于与至少一个源连通的等离子体室中。