专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08877593B2 Semiconductor device including an asymmetric feature, and method of making the same 有权
标题翻译：包括非对称特征的半导体器件及其制造方法
公开(公告)号：US08877593B2
公开(公告)日：2014-11-04
申请号：US13194980
申请日：2011-07-31
申请人： Josephine Chang , Isaac Lauer , Chung-Hsun Lin , Jeffrey Sleight
发明人： Josephine Chang , Isaac Lauer , Chung-Hsun Lin , Jeffrey Sleight
IPC分类号： H01L21/336 , H01L29/417 , H01L29/66 , H01L29/78 , H01L27/088 , H01L21/8238 , H01L21/8234 , H01L21/66
CPC分类号： H01L29/7835 , H01L21/823425 , H01L21/823475 , H01L21/823814 , H01L21/823871 , H01L27/088 , H01L29/41775 , H01L29/66659 , H01L29/7845
摘要： A semiconductor device (e.g., field effect transistor (FET)) having an asymmetric feature, includes a first gate formed on a substrate, first and second diffusion regions formed in the substrate on a side of the first gate, and first and second contacts which contact the first and second diffusion regions, respectively, the first contact being asymmetric with respect to the second contact.
摘要翻译：具有不对称特征的半导体器件（例如，场效应晶体管（FET））包括形成在衬底上的第一栅极，形成在第一栅极一侧的衬底中的第一和第二扩散区域以及第一和第二触点，分别与第一和第二扩散区接触，第一触点相对于第二触点是不对称的。

2. 发明申请

US20130026465A1 SEMICONDUCTOR DEVICE INCLUDING AN ASYMMETRIC FEATURE, AND METHOD OF MAKING THE SAME 有权
标题翻译：包括不对称特征的半导体器件及其制造方法
公开(公告)号：US20130026465A1
公开(公告)日：2013-01-31
申请号：US13194980
申请日：2011-07-31
申请人： Josephine Chang , Isaac Lauer , Chung-Hsun Lin , Jeffrey Sleight
发明人： Josephine Chang , Isaac Lauer , Chung-Hsun Lin , Jeffrey Sleight
IPC分类号： H01L27/088 , H01L21/336 , H01L29/66
CPC分类号： H01L29/7835 , H01L21/823425 , H01L21/823475 , H01L21/823814 , H01L21/823871 , H01L27/088 , H01L29/41775 , H01L29/66659 , H01L29/7845
摘要： A semiconductor device (e.g., field effect transistor (FET)) having an asymmetric feature, includes a first gate formed on a substrate, first and second diffusion regions formed in the substrate on a side of the first gate, and first and second contacts which contact the first and second diffusion regions, respectively, the first contact being asymmetric with respect to the second contact.
摘要翻译：具有不对称特征的半导体器件（例如，场效应晶体管（FET））包括形成在衬底上的第一栅极，形成在第一栅极一侧的衬底中的第一和第二扩散区域以及第一和第二触点，分别与第一和第二扩散区接触，第一触点相对于第二触点是不对称的。

3. 发明授权

US08669167B1 Techniques for metal gate workfunction engineering to enable multiple threshold voltage FINFET devices 有权
标题翻译：金属门功能工程技术可实现多个阈值电压FINFET器件
公开(公告)号：US08669167B1
公开(公告)日：2014-03-11
申请号：US13596687
申请日：2012-08-28
申请人： Josephine B. Chang , Isaac Lauer , Chung-Hsun Lin , Jeffrey W. Sleight
发明人： Josephine B. Chang , Isaac Lauer , Chung-Hsun Lin , Jeffrey W. Sleight
IPC分类号： H01L27/092
CPC分类号： H01L27/1211 , H01L21/845
摘要： Techniques are provided for gate work function engineering in FIN FET devices using a work function setting material an amount of which is provided proportional to fin pitch. In one aspect, a method of fabricating a FIN FET device includes the following steps. A SOI wafer having a SOI layer over a BOX is provided. An oxide layer is formed over the SOI layer. A plurality of fins is patterned in the SOI layer and the oxide layer. An interfacial oxide is formed on the fins. A conformal gate dielectric layer, a conformal gate metal layer and a conformal work function setting material layer are deposited on the fins. A volume of the conformal gate metal layer and a volume of the conformal work function setting material layer deposited over the fins is proportional to a pitch of the fins. A FIN FET device is also provided.
摘要翻译：在Fin FET器件中提供栅极功能工程的技术，其功能设定材料的数量与翅片间距成正比。一方面，制造FIN FET器件的方法包括以下步骤。提供了在BOX上具有SOI层的SOI晶片。在SOI层上形成氧化物层。在SOI层和氧化物层中图案化多个翅片。翅片上形成界面氧化物。共形栅介电层，共形栅极金属层和共形功函数设定材料层沉积在散热片上。共形栅极金属层的体积和沉积在鳍片上的共形功函数设定材料层的体积与翅片的间距成正比。还提供了一种FIN FET器件。

4. 发明申请

US20140051213A1 Techniques for Metal Gate Work Function Engineering to Enable Multiple Threshold Voltage Nanowire FET Devices 有权
标题翻译：金属栅极工作功能工程技术开启多阈值电压纳米线FET器件
公开(公告)号：US20140051213A1
公开(公告)日：2014-02-20
申请号：US13588724
申请日：2012-08-17
申请人： Josephine B. Chang , Isaac Lauer , Chung-Hsun Lin , Jeffrey W. Sleight
发明人： Josephine B. Chang , Isaac Lauer , Chung-Hsun Lin , Jeffrey W. Sleight
IPC分类号： H01L21/336
CPC分类号： H01L29/16 , B82Y10/00 , B82Y40/00 , H01L29/0673 , H01L29/068 , H01L29/4232 , H01L29/42392 , H01L29/66439 , H01L29/775 , H01L29/78696
摘要： A method of fabricating a nanowire FET device includes the following steps. A SOI wafer is provided having a SOI layer over a BOX. Nanowires and pads are etched in the SOI layer. The nanowires are suspended over the BOX. An interfacial oxide is formed surrounding each of the nanowires. A conformal gate dielectric is deposited on the interfacial oxide. A conformal first gate material is deposited on the conformal gate dielectric. A work function setting material is deposited on the conformal first gate material. A second gate material is deposited on the work function setting material to form at least one gate stack over the nanowires. A volume of the conformal first gate material and/or a volume of the work function setting material in the gate stack are/is proportional to a pitch of the nanowires.
摘要翻译：制造纳米线FET器件的方法包括以下步骤。提供了具有在BOX上的SOI层的SOI晶片。在SOI层中蚀刻纳米线和焊盘。纳米线悬挂在BOX上。围绕每个纳米线形成界面氧化物。共形栅电介质沉积在界面氧化物上。保形第一栅极材料沉积在保形栅极电介质上。工件功能设定材料沉积在保形第一栅极材料上。第二栅极材料沉积在功函数设定材料上以在纳米线上形成至少一个栅叠层。栅极堆叠中的共形第一栅极材料的体积和/或功函数设定材料的体积与纳米线的间距成比例。

5. 发明申请

US20140048882A1 TECHNIQUES FOR GATE WORKFUNCTION ENGINEERING TO REDUCE SHORT CHANNEL EFFECTS IN PLANAR CMOS DEVICES 有权
标题翻译：门工功能工程技术降低平面CMOS器件中的短路通道效应
公开(公告)号：US20140048882A1
公开(公告)日：2014-02-20
申请号：US13617283
申请日：2012-09-14
申请人： Josephine B. Chang , Isaac Lauer , Chung-Hsun Lin , Jeffrey W. Sleight
发明人： Josephine B. Chang , Isaac Lauer , Chung-Hsun Lin , Jeffrey W. Sleight
IPC分类号： H01L29/78
CPC分类号： H01L29/66545 , H01L21/823842 , H01L21/82385 , H01L21/84 , H01L27/1203
摘要： In one aspect, a CMOS device is provided. The CMOS device includes a SOI wafer having a SOI layer over a BOX; one or more active areas formed in the SOI layer in which one or more FET devices are formed, each of the FET devices having an interfacial oxide on the SOI layer and a gate stack on the interfacial oxide layer, the gate stack having (i) a conformal gate dielectric layer present on a top and sides of the gate stack, (ii) a conformal gate metal layer lining the gate dielectric layer, and (iii) a conformal workfunction setting metal layer lining the conformal gate metal layer. A volume of the conformal gate metal layer and/or a volume of the conformal workfunction setting metal layer present in the gate stack are/is proportional to a length of the gate stack.
摘要翻译：在一个方面，提供一种CMOS器件。 CMOS器件包括在BOX上具有SOI层的SOI晶片; 形成在其中形成有一个或多个FET器件的SOI层中的一个或多个有源区，每个FET器件在SOI层上具有界面氧化物，在界面氧化物层上具有栅极堆叠，所述栅极堆叠具有（i）存在于栅极堆叠的顶部和侧面上的共形栅极电介质层，（ii）衬在栅极介电层的共形栅极金属层，以及（iii）在保形栅极金属层之上的共形功函数设定金属层。存在于栅极堆叠中的共形栅极金属层的体积和/或共形功函数设定金属层的体积与栅极堆叠的长度成比例。

6. 发明申请

US20130256797A1 Asymmetric FET Formed Through Use of Variable Pitch Gate for Use as Logic Device and Test Structure 有权
标题翻译：通过使用可变间距门形成的非对称FET用作逻辑器件和测试结构
公开(公告)号：US20130256797A1
公开(公告)日：2013-10-03
申请号：US13441048
申请日：2012-04-06
申请人： Josephine B. Chang , Chung-Hsun Lin , Isaac Lauer , Jeffrey W. Sleight
发明人： Josephine B. Chang , Chung-Hsun Lin , Isaac Lauer , Jeffrey W. Sleight
IPC分类号： H01L27/088
CPC分类号： H01L27/088 , H01L21/823437 , H01L22/34 , H01L27/0207 , H01L27/1203
摘要： Asymmetric FET devices and methods for fabrication thereof that employ a variable pitch gate are provided. In one aspect, a FET device is provided. The FET device includes a wafer; a plurality of active areas formed in the wafer; a plurality of gate stacks on the wafer, wherein at least one of the gate stacks is present over each of the active areas, and wherein the gate stacks have an irregular gate-to-gate spacing such that for at least a given one of the active areas a gate-to-gate spacing on a source side of the given active area is greater than a gate-to-gate spacing on a drain side of the given active area; spacers on opposite sides of the gate stacks; and an angled implant in the source side of the given active area.
摘要翻译：提供了非对称FET器件及其制造方法，其采用可变间距栅极。一方面，提供一种FET器件。 FET器件包括晶片; 形成在晶片中的多个有源区; 晶片上的多个栅极堆叠，其中至少一个栅极堆叠存在于每个有源区域上，并且其中栅极堆叠具有不规则的栅极至栅极间隔，使得对于至少一个有源区域在给定有源区域的源极侧上的栅极至栅极间隔大于给定有源区域的漏极侧上的栅极至栅极间隔; 栅极堆叠的相对侧上的间隔物; 以及在给定活动区域的源侧的成角度的植入物。

7. 发明申请

US20130176769A1 8-TRANSISTOR SRAM CELL DESIGN WITH SCHOTTKY DIODES 有权
标题翻译：具有肖特基二极管的8晶体管SRAM单元设计
公开(公告)号：US20130176769A1
公开(公告)日：2013-07-11
申请号：US13345619
申请日：2012-01-06
申请人： Leland Chang , Isaac Lauer , Chung-Hsun Lin , Jeffrey W. Sleight
发明人： Leland Chang , Isaac Lauer , Chung-Hsun Lin , Jeffrey W. Sleight
IPC分类号： G11C11/40
CPC分类号： G11C11/417 , G11C11/412
摘要： An 8-transistor SRAM cell which includes two pull-up transistors and two pull-down transistors in cross-coupled inverter configuration to form two inverters for storing a single data bit, wherein each of the inverters includes a Schottky diode; first and second pass gate transistors having a gate terminal coupled to a write word line and a source or drain of each of the pass gate transistors coupled to a write bit line; and first and second read transistors coupled to the two pull-up and two pull-down transistors, one of the read transistors having a gate terminal coupled to a read word line and a source or a drain coupled to a read bit line. In a preferred embodiment, the 8-transistor SRAM cell has column select writing enabled for writing a value to the 8-transistor SRAM cell without inadvertently also writing a value to another 8-transistor SRAM cell.
摘要翻译：一种8晶体管SRAM单元，其包括两个上拉晶体管和两个交叉耦合的反相器配置的下拉晶体管，以形成用于存储单个数据位的两个反相器，其中每个反相器包括肖特基二极管; 第一和第二栅极晶体管，其具有耦合到写入字线的栅极端子和耦合到写位线的每个通路栅极晶体管的源极或漏极; 以及耦合到所述两个上拉和两个下拉晶体管的第一和第二读取晶体管，所述读取晶体管中的一个具有耦合到读取字线的栅极端子和耦合到读取位线的源极或漏极。在优选实施例中，8晶体管SRAM单元具有使能用于向8晶体管SRAM单元写入值的列选择写入，而无需另外向另一个8-晶体管SRAM单元写入一个值。

8. 发明授权

US08816327B2 Nanowire efuses 有权
标题翻译：纳米线efuses
公开(公告)号：US08816327B2
公开(公告)日：2014-08-26
申请号：US13611081
申请日：2012-09-12
申请人： Josephine B. Chang , Isaac Lauer , Chung-Hsun Lin , Jeffrey W. Sleight
发明人： Josephine B. Chang , Isaac Lauer , Chung-Hsun Lin , Jeffrey W. Sleight
IPC分类号： H01L29/06 , H01L29/78 , H01L23/525
CPC分类号： H01L29/785 , H01H2085/0283 , H01H2300/036 , H01L23/5256 , H01L29/0673 , H01L29/42392 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： Electrically programmable fuses and methods for forming the same are shown that include forming a wire between a first pad and a second pad on a substrate, forming a blocking structure around a portion of the wire, and depositing a metal layer on the wire and first and second pads to form a metal compound, wherein the metal compound fully penetrates the portion of the wire within the blocking structure.
摘要翻译：示出了电可编程熔丝及其形成方法，其包括在基板上的第一焊盘和第二焊盘之间形成导线，在焊丝的一部分周围形成阻挡结构，以及在焊丝上沉积金属层，第二垫以形成金属化合物，其中所述金属化合物完全穿透所述阻挡结构内的所述金属丝的所述部分。

9. 发明授权

US08669615B1 Techniques for metal gate workfunction engineering to enable multiple threshold voltage FINFET devices 有权
标题翻译：金属门功能工程技术可实现多个阈值电压FINFET器件
公开(公告)号：US08669615B1
公开(公告)日：2014-03-11
申请号：US13611257
申请日：2012-09-12
申请人： Josephine B. Chang , Isaac Lauer , Chung-Hsun Lin , Jeffrey W. Sleight
发明人： Josephine B. Chang , Isaac Lauer , Chung-Hsun Lin , Jeffrey W. Sleight
IPC分类号： H01L27/092
CPC分类号： H01L27/1211 , H01L21/845
摘要： Techniques are provided for gate work function engineering in FIN FET devices using a work function setting material an amount of which is provided proportional to fin pitch. In one aspect, a FIN FET device is provided. The FIN FET device includes a SOI wafer having an oxide layer and a SOI layer over a BOX, and a plurality of fins patterned in the oxide layer and the SOI layer; an interfacial oxide on the fins; and at least one gate stack on the interfacial oxide, the gate stack having (i) a conformal gate dielectric layer present, (ii) a conformal gate metal layer, and (iii) a conformal work function setting material layer. A volume of the conformal gate metal layer and a volume of the conformal work function setting material layer present in the gate stack is proportional to a pitch of the fins.
摘要翻译：在Fin FET器件中提供栅极功能工程的技术，其功能设定材料的数量与翅片间距成正比。在一个方面，提供一种FIN FET器件。 FIN FET器件包括在BOX上具有氧化物层和SOI层的SOI晶片和在氧化物层和SOI层中图案化的多个鳍状物; 翅片上的界面氧化物; 和界面氧化物上的至少一个栅极堆叠，所述栅极堆叠具有（i）存在共形栅极电介质层，（ii）共形栅极金属层，和（iii）共形功函数设定材料层。存在于栅极堆叠中的共形栅极金属层的体积和共形功函数设定材料层的体积与散热片的间距成正比。

10. 发明授权

US08597991B2 Embedded silicon germanium n-type filed effect transistor for reduced floating body effect 有权
公开(公告)号：US08597991B2
公开(公告)日：2013-12-03
申请号：US13568689
申请日：2012-08-07
申请人： Leland Chang , Isaac Lauer , Chung-Hsun Lin , Jeffrey W. Sleight
发明人： Leland Chang , Isaac Lauer , Chung-Hsun Lin , Jeffrey W. Sleight
IPC分类号： H01L21/84
CPC分类号： H01L27/1203 , H01L21/8238 , H01L29/66636 , H01L29/66772 , H01L29/78618 , H01L29/78621
摘要： A method for fabricating a semiconductor device includes forming a gate stack on an active region of a silicon-on-insulator substrate. The active region is within a semiconductor layer and is doped with an p-type dopant. A gate spacer is formed surrounding the gate stack. A first trench is formed in a region reserved for a source region and a second trench is formed in a region reserved for a drain region. The first and second trenches are formed while maintaining exposed the region reserved for the source region and the region reserved for the drain region. Silicon germanium is epitaxially grown within the first trench and the second trench while maintaining exposed the regions reserved for the source and drain regions, respectively.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式