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1. 发明授权

US06559469B1 Ferroelectric and high dielectric constant transistors 失效
标题翻译：铁电和高介电常数晶体管
公开(公告)号：US06559469B1
公开(公告)日：2003-05-06
申请号：US09686552
申请日：2000-10-11
申请人： Carlos A. Paz de Araujo , Larry D. McMillan , Vikram Joshi , Narayan Solayappan , Joseph D. Cuchiaro
发明人： Carlos A. Paz de Araujo , Larry D. McMillan , Vikram Joshi , Narayan Solayappan , Joseph D. Cuchiaro
IPC分类号： H01L2972
CPC分类号： H01L27/11502 , C23C16/448 , C23C16/45561 , C23C18/1216 , C23C18/14 , C30B7/00 , C30B7/005 , C30B29/68 , G11C11/22 , G11C11/223 , H01L21/31691 , H01L27/10805 , H01L28/55 , H01L28/60
摘要： An integrated circuit includes a layered superlattice material having the formula A1w1+a1A2w2+a2 . . . Ajwj+ajS1x1+s1S2x2+s2 . . . Skxk+skB1y1+b1B2y2+b2 . . . Blyl+blQz−q, where A1, A2 . . . Aj represent A-site elements in a perovskite-like structure, S1, S2 . . . Sk represent superlattice generator elements, B1, B2 . . . B1 represent B-site elements in a perovskite-like structure, Q represents an anion, the superscripts indicate the valences of the respective elements, the subscripts indicate the number of atoms of the element in the unit cell, and at least w1 and y1 are non-zero. Some of these materials are extremely low fatigue ferroelectrics and are applied in ferroelectric FETs in non-volatile memories. Others are high dielectric constant materials that do not degrade or break down over long periods of use and are applied as the gate insulator in volatile memories.
摘要翻译：集成电路包括具有公式A1w1 + a1A2w2 + a2的分层超晶格材料。。。 Ajwj + ajS1x1 + s1S2x2 + s2。。。 Skxk + skB1y1 + b1B2y2 + b2。。。 Blyl + blQz-q，其中A1，A2。。。 Aj代表钙钛矿结构中的A位元素，S1，S2。。。 Sk代表超晶格发生器元件B1，B2。。。 B1表示钙钛矿结构中的B位元素，Q表示阴离子，上标表示各元素的化合价，下标表示单元中元素的原子数，并且至少w1和y1为非零。这些材料中的一些是非常低的疲劳铁电体，并且被应用在非易失性存储器中的铁电FET中。其他的是高介电常数材料，其在长期使用中不会劣化或分解，并且作为在绝缘体中的栅绝缘体。

2. 发明授权

US5883828A Low imprint ferroelectric material for long retention memory and method of making the same 失效
标题翻译：用于长保留记忆的低压刻铁电材料和制造相同的方法
公开(公告)号：US5883828A
公开(公告)日：1999-03-16
申请号：US19849
申请日：1998-02-06
申请人： Joseph D. Cuchiaro , Narayan Solayappan , Carlos A. Paz de Araujo , Larry D. McMillan
发明人： Joseph D. Cuchiaro , Narayan Solayappan , Carlos A. Paz de Araujo , Larry D. McMillan
IPC分类号： C01G35/00 , G11C11/56 , H01L21/316 , H01L21/8242 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/92 , G11C11/22
CPC分类号： H01L27/11502 , G11C11/5657 , H01L21/31691 , H01L28/40 , Y10S428/901
摘要： Thin film ferroelectric materials for use in integrated memory circuits, such as FERAMS and the like, contain strontium bismuth niobium tantalate having an empirical formula SrBi.sub.2+E (Nb.sub.X Ta.sub.2-X)O.sub.9+3E/2, wherein E is a number representing an excess amount of bismuth ranging from zero to 2; and X is a number representing an excess amount of niobium ranging from 0.01 to 0.9. The thin films demonstrate an exceptional resistance to polarization imprinting when challenged with unidirectional voltage pulses.
摘要翻译：用于诸如FERAMS等的集成记忆电路中的薄膜铁电材料包含具有经验式SrBi2 + E（NbXTa2-X）O9 + 3E / 2的钽酸钽铋铌酸盐，其中E是表示过量的数的铋范围从零到2; X表示0.01〜0.9的过量的铌。当用单向电压脉冲进行挑战时，薄膜表现出极好的耐极化压印特性。

3. 发明授权

US5784310A Low imprint ferroelectric material for long retention memory and method of making the same 失效
公开(公告)号：US5784310A
公开(公告)日：1998-07-21
申请号：US810190
申请日：1997-03-03
申请人： Joseph D. Cuchiaro , Narayan Solayappan , Carlos A. Paz de Araujo , Larry D. McMillan
发明人： Joseph D. Cuchiaro , Narayan Solayappan , Carlos A. Paz de Araujo , Larry D. McMillan
IPC分类号： C01G35/00 , G11C11/56 , H01L21/316 , H01L21/8242 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/92 , G11C11/22
CPC分类号： H01L27/11502 , G11C11/5657 , H01L21/31691 , H01L28/40 , Y10S428/901
摘要： Thin film ferroelectric materials for use in integrated memory circuits, such as FERAMS and the like, contain strontium bismuth niobium tantalate having an empirical formula SrBi.sub.2+E (Nb.sub.X Ta.sub.2-X)O.sub.9+3E/2, wherein E is a number representing an excess amount of bismuth ranging from zero to 2; and X is a number representing an excess amount of niobium ranging from 0.01 to 0.9. The thin films demonstrate an exceptional resistance to polarization imprinting when challenged with unidirectional voltage pulses.

4. 发明授权

US06867452B2 Interlayer oxide containing thin films for high dielectric constant application of the formula AB2O6 or AB2O7 失效
标题翻译：含有氧化物的薄膜用于高介电常数应用的AB2O6或AB2O7
公开(公告)号：US06867452B2
公开(公告)日：2005-03-15
申请号：US10278581
申请日：2002-10-23
申请人： Shinichiro Hayashi , Vikram Joshi , Narayan Solayappan , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
发明人： Shinichiro Hayashi , Vikram Joshi , Narayan Solayappan , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
IPC分类号： H01L21/314 , H01L21/316 , H01L27/06 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L21/02197 , H01L21/02205 , H01L21/02282 , H01L21/02348 , H01L21/31691 , H01L27/0629
摘要： A high dielectric constant insulator including a thin film of a metal oxide selected from the group consisting of tungsten-bronze-type oxides, pyrochlore-type oxides, and combinations of Bi2O3 with an oxide selected from the group consisting of perovskites and pyrochlore-type oxides. An embodiment contains metal oxides represented by the general stoichiometric formulas AB2O6, A2B2O7 and A2Bi2B2O10, wherein A represents A-site atoms selected from the group of metals consisting of Ba, Bi, Sr, Pb, Ca, K, Na and La; and B represents B-site atoms selected from the group of metals consisting of Ti, Zr, Ta, Hf, Mo, W and Nb. Preferably, the metal oxides are (BaxSr1−x)(TayNb1−y)2O6, where 0≦y≦1.0 and 0≦y≦1.0; (BaxSr1−x)2(TayNb1−y)2O7, where 0≦x≦1.0 and 0≦y≦1.0; and (BaxSr1−x)2Bi2(TayNb1−y)2O10, where 0≦x≦1.0 and 0≦y≦1.0. Thin films according to the invention have a relative dielectric constant ≧40, and preferably about 100. The value of Vcc in the metal oxides of the invention is close to zero. The value of Tcc is
摘要翻译：一种高介电常数绝缘体，包括选自钨青铜型氧化物，烧绿石型氧化物和Bi 2 O 3与选自钙钛矿和烧绿石型氧化物的氧化物的组合的金属氧化物的薄膜。一个实施方案包含由一般化学计量式AB2O6，A2B2O7和A2B2B2O10表示的金属氧化物，其中A表示选自由Ba，Bi，Sr，Pb，Ca，K，Na和La组成的金属组中的A位原子; B表示选自由Ti，Zr，Ta，Hf，Mo，W和Nb组成的金属组中的B位原子。优选地，金属氧化物是（BaxSr1-x）（TayNb1-y）2O6，其中0 <= y <= 1.0且0 <= Y＆LE; 1.0; （BAxSr1-x）2（TayNb1-y）2O7，其中0 <= x <= 1.0且0 <= y <= 1.0; AND（BAxSr1-x）2Bi2（TayNb1-y）2O10，其中0 <= x <= 1.0且0 <= y <= 1.0。根据本发明的薄膜的相对介电常数> 40，优选约100。本发明的金属氧化物中的Vcc值接近零。 Tcc的值<1000ppm，优选<100。

5. 发明授权

US06541279B2 Method for forming an integrated circuit 有权
标题翻译：集成电路形成方法
公开(公告)号：US06541279B2
公开(公告)日：2003-04-01
申请号：US09798310
申请日：2001-03-02
申请人： Shinichiro Hayashi , Vikram Joshi , Narayan Solayappan , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
发明人： Shinichiro Hayashi , Vikram Joshi , Narayan Solayappan , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
IPC分类号： H01L2100
CPC分类号： H01L21/02197 , H01L21/02205 , H01L21/02282 , H01L21/02348 , H01L21/31691 , H01L27/0629
摘要： A high dielectric constant insulator including a thin film of a metal oxide selected from the group consisting of tungsten-bronze-type oxides, pyrochlore-type oxides, and combinations of Bi2O3 with an oxide selected from the group consisting of perovskites and pyrochlore-type oxides. An embodiment contains metal oxides represented by the general stoichiometric formulas AB2O6, A2B2O7 and A2Bi2B2O10, wherein A represents A-site atoms selected from the group of metals consisting of Ba, Bi, Sr, Pb, Ca, K, Na and La; and B represents B-site atoms selected from the group of metals consisting of Ti, Zr, Ta, Hf, Mo, W and Nb. Preferably, the metal oxides are (BaxSr1−x)(TayNb1−y)2O6, where 0≦x≦1.0 and 0≦y≦1.0; (BaxSr1−x)2(TayNb1−y)2O7, where 0≦x≦1.0 and 0≦y≦1.0; and (BaxSr1−x)2Bi2(TayNby−1)2O10, where 0≦x≦1.0 and 0≦y≦1.0. Thin films according to the invention have a relative dielectric constant ≧40, and preferably about 100. The value of Vcc in the metal oxides of the invention is close to zero. The value of Tcc is
摘要翻译：一种高介电常数绝缘体，包括选自钨青铜型氧化物，烧绿石型氧化物和Bi 2 O 3与选自钙钛矿和烧绿石型氧化物的氧化物的组合的金属氧化物的薄膜。一个实施方案包含由一般化学计量式AB2O6，A2B2O7和A2B2B2O10表示的金属氧化物，其中A表示选自由Ba，Bi，Sr，Pb，Ca，K，Na和La组成的金属组中的A位原子; B表示选自由Ti，Zr，Ta，Hf，Mo，W和Nb组成的金属组中的B位原子。优选地，金属氧化物是（BaxSr1-x）（TayNb1-y）2O6，其中0 <= x <= 1.0且0 <= y <= 1.0; （BaxSr1-x）2（TayNb1-y）2O7，其中0 <= x <= 1.0且0 <= y <= 1.0; 和（BaxSr1-x）2Bi2（TayNby-1）2O10，其中0 <= x <= 1.0且0 <= y <= 1.0。根据本发明的薄膜的相对介电常数> 40，优选约100.本发明金属氧化物中的Vcc值接近零。 Tcc的值<1000ppm，优选<100。

6. 发明授权

US06495878B1 Interlayer oxide containing thin films for high dielectric constant application 有权
标题翻译：用于高介电常数应用的含有薄膜的层间氧化物
公开(公告)号：US06495878B1
公开(公告)日：2002-12-17
申请号：US09365628
申请日：1999-08-02
申请人： Shinichiro Hayashi , Vikram Joshi , Narayan Solayappan , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
发明人： Shinichiro Hayashi , Vikram Joshi , Narayan Solayappan , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
IPC分类号： H01L27108
CPC分类号： H01L21/02197 , H01L21/02205 , H01L21/02282 , H01L21/02348 , H01L21/31691 , H01L27/0629
摘要： A high dielectric constant insulator including a thin film of a metal oxide selected from the group consisting of tungsten-bronze-type oxides, pyrochlore-type oxides, and combinations of Bi2O3 with an oxide selected from the group consisting of perovskites and pyrochlore-type oxides. An embodiment contains metal oxides represented by the general stoichiometric formulas AB2O6, A2B2O7 and A2Bi2B2O10, wherein A represents A-site atoms selected from the group of metals consisting of Ba, Bi, Sr, Pb, Ca, K, Na and La; and B represents B-site atoms selected from the group of metals consisting of Ti, Zr, Ta, Hf, Mo, W and Nb. Preferably, the metal oxides are (BaxSr1−x)(TayNb1−y)2O6, where 0≦x≦1.0 and 0≦y≦1.0; (BaxSr1−x)2(TayNb1−Y)2O7, where 0≦x≦1.0 and 0≦y≦1.0; and (BaxSr1−x)2Bi2(TayNb1−y)2O10, where 0≦x≦1.0 and 0≦y≦1.0. Thin films according to the invention have a relative dielectric constant ≧40, and preferably about 100. The value of Vcc in the metal oxides of the invention is close to zero. The value of Tcc is
摘要翻译：一种高介电常数绝缘体，包括选自钨青铜型氧化物，烧绿石型氧化物和Bi 2 O 3与选自钙钛矿和烧绿石型氧化物的氧化物的组合的金属氧化物的薄膜。一个实施方案包含由一般化学计量式AB2O6，A2B2O7和A2B2B2O10表示的金属氧化物，其中A表示选自由Ba，Bi，Sr，Pb，Ca，K，Na和La组成的金属组中的A位原子; B表示选自由Ti，Zr，Ta，Hf，Mo，W和Nb组成的金属组中的B位原子。优选地，金属氧化物是（BaxSr1-x）（TayNb1-y）2O6，其中0 <= x <= 1.0且0 <= y <= 1.0; （BaxSr1-x）2（TayNb1-Y）2O7，其中0 <= x <= 1.0且0 <= y <= 1.0; 和（BaxSr1-x）2Bi2（TayNb1-y）2O10，其中0 <= x <= 1.0且0 <= y <= 1.0。根据本发明的薄膜的相对介电常数> 40，优选约100。本发明的金属氧化物中的Vcc值接近零。 Tcc的值<1000ppm，优选<100。

7. 发明授权

US06781184B2 Barrier layers for protecting metal oxides from hydrogen degradation 有权
标题翻译：用于保护金属氧化物免受氢降解的阻挡层
公开(公告)号：US06781184B2
公开(公告)日：2004-08-24
申请号：US09998469
申请日：2001-11-29
申请人： Narayan Solayappan , Jolanta Celinska , Vikram Joshi , Carlos A. Paz de Araujo , Larry D. McMillan
发明人： Narayan Solayappan , Jolanta Celinska , Vikram Joshi , Carlos A. Paz de Araujo , Larry D. McMillan
IPC分类号： H01L27108
CPC分类号： H01L28/57 , H01L23/642 , H01L2924/0002 , H01L2924/00
摘要： A hydrogen diffusion barrier in an integrated circuit is located to inhibit diffusion of hydrogen to a thin film of a metal oxide, such as a ferroelectric layered superlattice material, in an integrated circuit. The hydrogen diffusion barrier comprises at least one of the following chemical compounds: strontium tantalate, bismuth tantalate, tantalum oxide, titanium oxide, zirconium oxide and aluminum oxide. The hydrogen barrier layer is amorphous and is made by a MOCVD process at a temperature of 450° C. or less. A supplemental hydrogen barrier layer comprising a material selected from the group consisting of silicon nitride and a crystalline form of one of said hydrogen barrier layer materials is formed adjacent to said hydrogen diffusion barrier.
摘要翻译：集成电路中的氢扩散阻挡层位于集成电路中以抑制氢扩散到诸如铁电层状超晶格材料的金属氧化物的薄膜。氢扩散阻挡层包括以下化合物中的至少一种：钽酸锶，钽酸铋，氧化钽，氧化钛，氧化锆和氧化铝。氢阻挡层是无定形的，并且在450℃或更低的温度下通过MOCVD工艺制成。在与所述氢扩散阻挡层相邻的地方形成包括选自氮化硅和所述氢阻挡层材料之一的结晶形式的材料的补充氢阻挡层。

8. 发明授权

US06511718B1 Method and apparatus for fabrication of thin films by chemical vapor deposition 失效
标题翻译：通过化学气相沉积制造薄膜的方法和装置
公开(公告)号：US06511718B1
公开(公告)日：2003-01-28
申请号：US09446226
申请日：1999-12-17
申请人： Carlos A. Paz de Araujo , Larry D. McMillan , Narayan Solayappan , Jeffrey W. Bacon
发明人： Carlos A. Paz de Araujo , Larry D. McMillan , Narayan Solayappan , Jeffrey W. Bacon
IPC分类号： H05H124
CPC分类号： C23C16/45565 , B05D1/007 , B05D1/04 , C23C16/40 , C23C16/448 , C23C16/45561 , C23C18/12 , H01L21/31691 , H01L28/55
摘要： A venturi mist generator creates a mist comprising droplets having a mean diameter less than one micron from liquid precursors containing multi-metal polyalkoxide compounds. The mist is mixed and then passed into a gasifier where the mist droplets are gasified at a temperature of between 100° C. and 250° C., which is lower than the temperature at which the precursor compounds decompose. The gasified precursor compounds are transported by carrier gas through insulated tubing at ambient temperature to prevent both condensation and premature decomposition. The gasified precursors are mixed with oxidant gas, and the gaseous reactant mixture is injected through a showerhead inlet into a deposition reactor in which a substrate is heated at a temperature of from 300° C. to 600 ° C. The gasified precursors decompose at the substrate and form a thin film of solid material on the substrate. The thin film is treated at elevated temperatures of from 500° C. to 900° C. to form polycrystalline metal oxide material, in particular, ferroelectric layered superlattice material.
摘要翻译：文丘里雾发生器产生包含具有小于1微米的平均直径的液滴的雾，所述液体前体含有多金属聚烷氧化物。将雾混合，然后进入气化器，在气化器中雾滴在100℃和250℃之间的温度下气化，该温度低于前体化合物分解的温度。气化的前体化合物通过载气在环境温度下通过绝缘管输送，以防止冷凝和过早分解。将气化的前体与氧化剂气体混合，并将气态反应物混合物通过喷头入口注入沉积反应器中，在沉积反应器中将基底在300℃至600℃的温度下加热。气化的前体在衬底并在衬底上形成固体材料的薄膜。该薄膜在500℃至900℃的高温下进行处理以形成多晶金属氧化物材料，特别是铁电层状超晶格材料。

9. 发明授权

US07187079B2 Stacked memory cell having diffusion barriers 有权
标题翻译：具有扩散阻挡层的堆积式存储单元
公开(公告)号：US07187079B2
公开(公告)日：2007-03-06
申请号：US10666381
申请日：2003-09-19
申请人： Vikram Joshi , Narayan Solayappan , Carlos A. Paz de Araujo , Larry D. McMillan
发明人： Vikram Joshi , Narayan Solayappan , Carlos A. Paz de Araujo , Larry D. McMillan
IPC分类号： H01L23/48
CPC分类号： H01L27/11502 , C30B29/32 , C30B29/68 , H01L23/642 , H01L27/11507 , H01L28/55 , H01L2924/0002 , H01L2924/00
摘要： A nonconductive hydrogen barrier layer is deposited on a substrate and completely covers the surface area over a memory capacitor and a MOSFET switch of an integrated circuit memory cell. A portion of an insulator layer adjacent to the bottom electrode of a memory capacitor is removed by etching to form a moat region. A nonconductive oxygen barrier layer is deposited to cover the sidewall and bottom of the moat. The nonconductive oxygen barrier layer and a conductive diffusion barrier beneath the capacitor together provide a substantially continuous diffusion barrier between the capacitor and a switch. Also, the nonconductive hydrogen barrier layer, the nonconductive oxygen barrier, and the conductive diffusion barrier substantially completely envelop the capacitor, in particular a ferroelectric thin film in the capacitor.
摘要翻译：非导电氢阻挡层沉积在基板上并完全覆盖集成电路存储单元的存储电容器和MOSFET开关上的表面积。通过蚀刻去除与存储电容器的底部电极相邻的绝缘体层的一部分，以形成护城河区域。沉积非导电氧阻隔层以覆盖护城河的侧壁和底部。电容器下面的非导电氧阻挡层和导电扩散阻挡层一起在电容器和开关之间提供基本上连续的扩散阻挡层。此外，非导电氢阻挡层，非导电氧阻挡层和导电扩散阻挡层基本上完全包围电容器，特别是电容器中的铁电薄膜。

10. 发明授权

US07064374B2 Barrier layers for protecting metal oxides from hydrogen degradation 有权
公开(公告)号：US07064374B2
公开(公告)日：2006-06-20
申请号：US10872895
申请日：2004-06-21
申请人： Narayan Solayappan , Jolanta Celinska , Vikram Joshi , Carlos A. Paz de Araujo , Larry D. McMillan
发明人： Narayan Solayappan , Jolanta Celinska , Vikram Joshi , Carlos A. Paz de Araujo , Larry D. McMillan
IPC分类号： H01L27/108
CPC分类号： H01L28/57 , H01L23/642 , H01L2924/0002 , H01L2924/00
摘要： A hydrogen diffusion barrier in an integrated circuit is located to inhibit diffusion of hydrogen to a thin film of a metal oxide, such as a ferroelectric layered superlattice material, in an integrated circuit. The hydrogen diffusion barrier comprises at least one of the following chemical compounds: strontium tantalate, bismuth tantalate, tantalum oxide, titanium oxide, zirconium oxide and aluminum oxide. The hydrogen barrier layer is amorphous and is made by a MOCVD process at a temperature of 450° C. or less. A supplemental hydrogen barrier layer comprising a material selected from the group consisting of silicon nitride and a crystalline form of one of said hydrogen barrier layer materials is formed adjacent to said hydrogen diffusion barrier.

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