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1. 发明授权

US10032923B2 Metal oxide thin film, method for manufacturing the same, and solution for metal oxide thin film 有权
公开(公告)号：US10032923B2
公开(公告)日：2018-07-24
申请号：US14127562
申请日：2011-03-04
申请人： Jooho Moon , Youngmin Jeong , Tae Hwan Jun , Keun Kyu Song , Areum Kim , Yangho Jung
发明人： Jooho Moon , Youngmin Jeong , Tae Hwan Jun , Keun Kyu Song , Areum Kim , Yangho Jung
IPC分类号： H01L29/786 , H01L21/02 , H01L21/477 , H01L29/66 , C23C18/12 , H01L31/0224 , C09D1/00 , C09D7/61
CPC分类号： H01L29/7869 , C09D1/00 , C09D7/61 , C23C18/1208 , C23C18/1216 , C23C18/1275 , C23C18/1279 , C23C18/1283 , C23C18/1287 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02628 , H01L21/477 , H01L29/66969 , H01L31/022466
摘要： The present disclosure provides a solution for a metal oxide semiconductor thin film, including metal hydroxides dissolved in an aqueous or nonaqueous solvent and an acid/base titrant for controlling solubility of metal hydroxides. A solution is synthesized to improve stability and semiconductive performance of a device through addition of other metal hydroxides. The solution is applied on a substrate and annealed by using various annealing apparatuses to obtain a high-quality metal oxide thin film at low temperatures. The thin film is optically transparent, and thus can be applied to thin films for various electronic devices, solar cells, various sensors, memory devices, and the like.

2. 发明申请

US20150137115A1 METAL OXIDE THIN FILM, METHOD FOR MANUFACTURING THE SAME, AND SOLUTION FOR METAL OXIDE THIN FILM 审中-公开
标题翻译：金属氧化物薄膜，其制造方法和金属氧化物薄膜的解决方案
公开(公告)号：US20150137115A1
公开(公告)日：2015-05-21
申请号：US14127562
申请日：2011-03-04
申请人： Jooho Moon , Youngmin Jeong , Tae Hwan Jun , Keun Kyu Song , Areum Kim , Yangho Jung
发明人： Jooho Moon , Youngmin Jeong , Tae Hwan Jun , Keun Kyu Song , Areum Kim , Yangho Jung
IPC分类号： H01L29/786 , H01L21/02 , H01L21/477 , H01L29/66
CPC分类号： H01L29/7869 , C09D1/00 , C09D7/61 , C23C18/1208 , C23C18/1216 , C23C18/1275 , C23C18/1279 , C23C18/1283 , C23C18/1287 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02628 , H01L21/477 , H01L29/66969 , H01L31/022466
摘要： The present disclosure provides a solution for a metal oxide semiconductor thin film, including metal hydroxides dissolved in an aqueous or nonaqueous solvent and an acid/base titrant for controlling solubility of metal hydroxides. A solution is synthesized to improve stability and semiconductive performance of a device through addition of other metal hydroxides. The solution is applied on a substrate and annealed by using various annealing apparatuses to obtain a high-quality metal oxide thin film at low temperatures. The thin film is optically transparent, and thus can be applied to thin films for various electronic devices, solar cells, various sensors, memory devices, and the like.
摘要翻译：本公开提供了一种金属氧化物半导体薄膜的溶液，其包括溶解在水性或非水性溶剂中的金属氢氧化物和用于控制金属氢氧化物的溶解度的酸/碱滴定剂。合成溶液以通过加入其它金属氢氧化物来改善器件的稳定性和半导体性能。将溶液涂布在基板上，并使用各种退火装置进行退火，以在低温下获得高质量的金属氧化物薄膜。薄膜是光学透明的，因此可以应用于各种电子设备，太阳能电池，各种传感器，存储器件等的薄膜。

3. 发明授权

US08252625B2 Organic thin film transistor substrate and method of manufacturing the same 有权
标题翻译：有机薄膜晶体管基板及其制造方法
公开(公告)号：US08252625B2
公开(公告)日：2012-08-28
申请号：US12724265
申请日：2010-03-15
申请人： Seung Hwan Cho , Keun Kyu Song , Min Ho Yoon
发明人： Seung Hwan Cho , Keun Kyu Song , Min Ho Yoon
IPC分类号： H01L51/40
CPC分类号： H01L51/0545 , H01L27/283 , H01L51/0558
摘要： The present invention provides an organic thin film transistor substrate and a method of manufacturing the same capable of uniformly forming the thickness of a gate insulating layer and a protective layer and preventing overflow of an organic semiconductive layer.The organic thin film transistor according to the present invention comprises a gate line formed on a substrate; a data line which intersects the gate line with an organic gate insulating layer interposed therebetween to define a pixel area; a thin film transistor connected with the gate line and the data line and which includes an organic semiconductive layer; a pixel electrode connected with the thin film transistor and formed in the pixel area; an organic protective layer formed parallel with the gate line to cover the organic semiconductive layer and its peripheral area; a first border insulating layer stepwise formed so that the organic gate insulating layer and the protective layer are filled, and a second border insulating layer formed on the source electrode and the drain electrode of the thin film transistor so that the organic semiconductive layer is filled.
摘要翻译：本发明提供一种能够均匀形成栅极绝缘层和保护层的厚度并防止有机半导体层溢出的有机薄膜晶体管基板及其制造方法。根据本发明的有机薄膜晶体管包括形成在基板上的栅极线; 与栅极线相交的数据线和插入其间的有机栅极绝缘层，以限定像素区域; 与栅极线和数据线连接并且包括有机半导体层的薄膜晶体管; 与所述薄膜晶体管连接并形成在所述像素区域中的像素电极; 与栅极线平行地形成以覆盖有机半导体层及其周边区域的有机保护层; 逐层形成第一边界绝缘层，以便填充有机栅极绝缘层和保护层;以及第二边界绝缘层，形成在薄膜晶体管的源电极和漏电极上，从而填充有机半导体层。

4. 发明申请

US20100173451A1 ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：有机薄膜晶体管基板及其制造方法
公开(公告)号：US20100173451A1
公开(公告)日：2010-07-08
申请号：US12724265
申请日：2010-03-15
申请人： Seung Hwan CHO , Keun Kyu Song , Min Ho Yoon
发明人： Seung Hwan CHO , Keun Kyu Song , Min Ho Yoon
IPC分类号： H01L51/40 , H01L21/336
CPC分类号： H01L51/0545 , H01L27/283 , H01L51/0558
摘要： The present invention provides an organic thin film transistor substrate and a method of manufacturing the same capable of uniformly forming the thickness of a gate insulating layer and a protective layer and preventing overflow of an organic semiconductive layer.The organic thin film transistor according to the present invention comprises a gate line formed on a substrate; a data line which intersects the gate line with an organic gate insulating layer interposed therebetween to define a pixel area; a thin film transistor connected with the gate line and the data line and which includes an organic semiconductive layer; a pixel electrode connected with the thin film transistor and formed in the pixel area; an organic protective layer formed parallel with the gate line to cover the organic semiconductive layer and its peripheral area; a first border insulating layer stepwise formed so that the organic gate insulating layer and the protective layer are filled, and a second border insulating layer formed on the source electrode and the drain electrode of the thin film transistor so that the organic semiconductive layer is filled.
摘要翻译：本发明提供一种能够均匀形成栅极绝缘层和保护层的厚度并防止有机半导体层溢出的有机薄膜晶体管基板及其制造方法。根据本发明的有机薄膜晶体管包括形成在基板上的栅极线; 与栅极线相交的数据线和插入其间的有机栅极绝缘层，以限定像素区域; 与栅极线和数据线连接并且包括有机半导体层的薄膜晶体管; 与所述薄膜晶体管连接并形成在所述像素区域中的像素电极; 与栅极线平行地形成以覆盖有机半导体层及其周边区域的有机保护层; 逐层形成第一边界绝缘层，以便填充有机栅极绝缘层和保护层;以及第二边界绝缘层，形成在薄膜晶体管的源电极和漏电极上，从而填充有机半导体层。

5. 发明授权

US07808696B2 Electrophoretic display device and fabrication thereof 有权
标题翻译：电泳显示装置及其制造
公开(公告)号：US07808696B2
公开(公告)日：2010-10-05
申请号：US11829020
申请日：2007-07-26
申请人： Woo Jae Lee , Seong Sik Shin , Nam Seok Roh , Keun Kyu Song
发明人： Woo Jae Lee , Seong Sik Shin , Nam Seok Roh , Keun Kyu Song
IPC分类号： G02B26/00 , G09G3/34 , G03G13/00
CPC分类号： G02F1/167
摘要： An electrophoretic display device having improved frontal reflectance includes a first substrate including a first electrode of a transparent material having a first optical pattern, a second substrate opposing the first substrate and including a plurality of second electrodes, a spacer interposed between the first and second substrates to define a space between the first and second substrates, and a image display layer formed in the space formed by the first and second substrates and the spacer to display an image by an electric field generated between the first and second electrodes.
摘要翻译：具有改进的正面反射率的电泳显示装置包括：第一基板，包括具有第一光学图案的透明材料的第一电极，与第一基板相对的第二基板，并且包括多个第二电极;插入在第一和第二基板之间的间隔件以限定第一和第二基板之间的空间，以及形成在由第一和第二基板和间隔件形成的空间中的图像显示层，以通过在第一和第二电极之间产生的电场显示图像。

6. 发明授权

US07715089B2 Electrophoretic display panel and method of fabricating the same 有权
标题翻译：电泳显示面板及其制造方法
公开(公告)号：US07715089B2
公开(公告)日：2010-05-11
申请号：US11836687
申请日：2007-08-09
申请人： Keun Kyu Song
发明人： Keun Kyu Song
IPC分类号： G02B26/00 , G02F1/133 , G03G13/00
CPC分类号： G02F1/167 , G02F1/133377 , G02F1/1368
摘要： An electrophoretic display panel with a fast response speed and its fabrication method are disclosed. The electrophoretic display panel includes a first array substrate including a gate line and a data line extending perpendicularly to each other, a thin film transistor connected to the gate line and the data line, and a pixel electrode electrically connected to the thin film transistor. The electrophoretic display panel also includes a second array substrate coupled the first array substrate and including a common electrode capable of forming an electric field with the pixel electrode, a spacer formed on at least one of the first array substrate or the second array substrate to define a charging region in the pixel region; and an electrophoretic medium in the charging region between the first and second array substrates.
摘要翻译：公开了具有快速响应速度的电泳显示面板及其制造方法。电泳显示面板包括：第一阵列基板，包括栅极线和彼此垂直延伸的数据线;连接到栅极线和数据线的薄膜晶体管，以及电连接到薄膜晶体管的像素电极。电泳显示面板还包括耦合第一阵列基板并包括能够与像素电极形成电场的公共电极的第二阵列基板，形成在第一阵列基板或第二阵列基板中的至少一个上的间隔件，像素区域中的充电区域; 以及在第一和第二阵列基板之间的充电区域中的电泳介质。

7. 发明申请

US20080024432A1 ELECTROPHORETIC DISPLAY DEVICE AND FABRICATION THEREOF 有权
标题翻译：电泳显示装置及其制造方法
公开(公告)号：US20080024432A1
公开(公告)日：2008-01-31
申请号：US11829020
申请日：2007-07-26
申请人： Woo Jae Lee , Seong Sik Shin , Nam Seok Roh , Keun Kyu Song
发明人： Woo Jae Lee , Seong Sik Shin , Nam Seok Roh , Keun Kyu Song
IPC分类号： G09G3/34
CPC分类号： G02F1/167
摘要： An electrophoretic display device having improved frontal reflectance includes a first substrate including a first electrode of a transparent material having a first optical pattern, a second substrate opposing the first substrate and including a plurality of second electrodes, a spacer interposed between the first and second substrates to define a space between the first and second substrates, and a image display layer formed in the space formed by the first and second substrates and the spacer to display an image by an electric field generated between the first and second electrodes.
摘要翻译：具有改进的正面反射率的电泳显示装置包括：第一基板，包括具有第一光学图案的透明材料的第一电极，与第一基板相对的第二基板，并且包括多个第二电极;插入在第一和第二基板之间的间隔件以限定第一和第二基板之间的空间，以及形成在由第一和第二基板和间隔件形成的空间中的图像显示层，以通过在第一和第二电极之间产生的电场显示图像。

8. 发明申请

US20080017851A1 FABRICATION METHOD FOR AN ORGANIC THIN FILM TRANSISTOR SUBSTRATE 有权
标题翻译：有机薄膜晶体管基板的制造方法
公开(公告)号：US20080017851A1
公开(公告)日：2008-01-24
申请号：US11781109
申请日：2007-07-20
申请人： Tae Young CHOI , Bo Sung Kim , Keun Kyu Song , Seung Hwan Cho
发明人： Tae Young CHOI , Bo Sung Kim , Keun Kyu Song , Seung Hwan Cho
IPC分类号： H01L51/10 , H01L51/40
CPC分类号： H01L51/0096 , H01L51/0545 , H01L51/102 , H01L51/107 , Y02E10/549
摘要： An organic thin film transistor (TFT) substrate with a simplified fabrication process is disclosed. The TFT substrate includes a gate line and a data line and an organic TFT connected to the gate line and the data line. The gate line and the data line define a pixel region where a pixel electrode is formed. A first contact portion connects the data line to the organic TFT, and a second contact portion connects the pixel electrode to the organic TFT. A passivation layer covers the organic TFT. The organic TFT substrate also includes a bank insulating layer with a first contact hole for connecting the first contact portion to the organic TFT, a second contact hole for connecting the second contact portion to the organic TFT, a first sub bank defining a location of the gate insulating layer, and a second sub bank defining a location of the passivation layer.
摘要翻译：公开了一种简化制造工艺的有机薄膜晶体管（TFT）衬底。 TFT基板包括栅极线和数据线以及连接到栅极线和数据线的有机TFT。栅极线和数据线限定形成像素电极的像素区域。第一接触部将数据线连接到有机TFT，第二接触部将像素电极连接到有机TFT。钝化层覆盖有机TFT。有机TFT基板还包括具有用于将第一接触部分连接到有机TFT的第一接触孔的第一接触孔，用于将第二接触部分连接到有机TFT的第二接触孔，限定位置的第一子组栅绝缘层和限定钝化层的位置的第二子库。

9. 发明授权

US08278648B2 Fabrication method for an organic thin film transistor substrate 有权
标题翻译：有机薄膜晶体管基板的制造方法
公开(公告)号：US08278648B2
公开(公告)日：2012-10-02
申请号：US11781109
申请日：2007-07-20
申请人： Tae Young Choi , Bo Sung Kim , Keun Kyu Song , Seung Hwan Cho
发明人： Tae Young Choi , Bo Sung Kim , Keun Kyu Song , Seung Hwan Cho
IPC分类号： H01L29/08 , H01L51/10
CPC分类号： H01L51/0096 , H01L51/0545 , H01L51/102 , H01L51/107 , Y02E10/549
摘要： An organic thin film transistor (TFT) substrate with a simplified fabrication process is disclosed. The TFT substrate includes a gate line and a data line and an organic TFT connected to the gate line and the data line. The gate line and the data line define a pixel region where a pixel electrode is formed. A first contact portion connects the data line to the organic TFT, and a second contact portion connects the pixel electrode to the organic TFT. A passivation layer covers the organic TFT. The organic TFT substrate also includes a bank insulating layer with a first contact hole for connecting the first contact portion to the organic TFT, a second contact hole for connecting the second contact portion to the organic TFT, a first sub bank defining a location of the gate insulating layer, and a second sub bank defining a location of the passivation layer.
摘要翻译：公开了一种简化制造工艺的有机薄膜晶体管（TFT）衬底。 TFT基板包括栅极线和数据线以及连接到栅极线和数据线的有机TFT。栅极线和数据线限定形成像素电极的像素区域。第一接触部将数据线连接到有机TFT，第二接触部将像素电极连接到有机TFT。钝化层覆盖有机TFT。有机TFT基板还包括具有用于将第一接触部分连接到有机TFT的第一接触孔的第一接触孔，用于将第二接触部分连接到有机TFT的第二接触孔，限定位置的第一子组栅绝缘层和限定钝化层的位置的第二子库。

10. 发明授权

US07709834B2 Organic thin film transistor substrate and method of manufacturing the same 有权
标题翻译：有机薄膜晶体管基板及其制造方法
公开(公告)号：US07709834B2
公开(公告)日：2010-05-04
申请号：US11828971
申请日：2007-07-26
申请人： Seung Hwan Cho , Keun Kyu Song , Min Ho Yoon
发明人： Seung Hwan Cho , Keun Kyu Song , Min Ho Yoon
IPC分类号： H01L35/24 , H01L51/00
CPC分类号： H01L51/0545 , H01L27/283 , H01L51/0558
摘要： The present invention provides an organic thin film transistor substrate and a method of manufacturing the same capable of uniformly forming the thickness of a gate insulating layer and a protective layer and preventing overflow of an organic semiconductive layer.The organic thin film transistor according to the present invention comprises a gate line formed on a substrate; a data line which intersects the gate line with an organic gate insulating layer interposed therebetween to define a pixel area; a thin film transistor connected with the gate line and the data line and which includes an organic semiconductive layer; a pixel electrode connected with the thin film transistor and formed in the pixel area; an organic protective layer formed parallel with the gate line to cover the organic semiconductive layer and its peripheral area; a first border insulating layer stepwise formed so that the organic gate insulating layer and the protective layer are filled, and a second border insulating layer formed on the source electrode and the drain electrode of the thin film transistor so that the organic semiconductive layer is filled.
摘要翻译：本发明提供一种能够均匀形成栅极绝缘层和保护层的厚度并防止有机半导体层溢出的有机薄膜晶体管基板及其制造方法。根据本发明的有机薄膜晶体管包括形成在基板上的栅极线; 与栅极线相交的数据线和插入其间的有机栅极绝缘层，以限定像素区域; 与栅极线和数据线连接并且包括有机半导体层的薄膜晶体管; 与所述薄膜晶体管连接并形成在所述像素区域中的像素电极; 与栅极线平行地形成以覆盖有机半导体层及其周边区域的有机保护层; 逐层形成第一边界绝缘层，以便填充有机栅极绝缘层和保护层;以及第二边界绝缘层，形成在薄膜晶体管的源电极和漏电极上，从而填充有机半导体层。

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