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1. 发明申请

US20110183441A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110183441A1
公开(公告)日：2011-07-28
申请号：US13083309
申请日：2011-04-08
申请人： Joo-hyun JEONG , Chul-ho Chung
发明人： Joo-hyun JEONG , Chul-ho Chung
IPC分类号： H01L21/02
CPC分类号： H01L21/76841 , H01L21/2855 , H01L23/5227 , H01L23/53223 , H01L23/53238 , H01L28/10 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device and a method of fabricating a semiconductor device that includes forming an interlayer insulating film on a semiconductor substrate; depositing a first soft magnetic thin film on the interlayer insulating film through sputtering using a target containing at least one of Fe, Co, Ni, or alloys thereof, the target further containing at least one of Ti, Hf, or B, the sputtering being performed using an N2 reactive gas; forming a metal film on the first soft magnetic thin film; depositing a second soft magnetic thin film on the metal film through sputtering using the same or another target containing at least one of Fe, Co, Ni, or alloys thereof, the target further containing at least one of Ti, Hf, or B, the sputtering being performed using an N2 reactive gas; and patterning to form an inductor.
摘要翻译：一种半导体器件和制造半导体器件的方法，包括在半导体衬底上形成层间绝缘膜; 通过使用包含Fe，Co，Ni或其合金中的至少一种的靶通过溅射，在层间绝缘膜上沉积第一软磁性薄膜，靶还含有Ti，Hf或B中的至少一种，溅射为使用N2反应气体进行; 在第一软磁薄膜上形成金属膜; 通过溅射使用含有Fe，Co，Ni或其合金中的至少一种的相同或另一靶的溅射在金属膜上沉积第二软磁薄膜，靶还含有Ti，Hf或B中的至少一种，使用N 2反应气体进行溅射; 并图案化以形成电感器。

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