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    • 1. 发明申请
    • Semiconductor Devices Having Recessed Channels
    • 具有嵌入式通道的半导体器件
    • US20120305997A1
    • 2012-12-06
    • US13586593
    • 2012-08-15
    • Joo-Young LeeDong-Gun Park
    • Joo-Young LeeDong-Gun Park
    • H01L29/78H01L27/088
    • H01L27/10823H01L27/10814H01L27/10852H01L27/10876
    • A semiconductor device includes a substrate, a gate insulation layer, a gate structure, a gate spacer, and first and second impurity regions. The substrate has an active region defined by an isolation layer. The active region has a gate trench thereon. The gate insulation layer is formed on an inner wall of the gate trench. The gate structure is formed on the gate insulation layer to fill the gate trench. The gate structure has a width smaller than that of the gate trench, and has a recess at a first portion thereof. The gate spacer is formed on sidewalls of the gate structure. The first and second impurity regions are formed at upper portions of the active region adjacent to the gate structure. The first impurity region is closer to the recess than the second impurity region. Related methods are also provided.
    • 半导体器件包括衬底,栅极绝缘层,栅极结构,栅极间隔物以及第一和第二杂质区域。 衬底具有由隔离层限定的有源区。 有源区在其上具有栅极沟槽。 栅极绝缘层形成在栅极沟槽的内壁上。 栅极结构形成在栅极绝缘层上以填充栅极沟槽。 栅极结构的宽度小于栅极沟槽的宽度,并且在其第一部分处具有凹部。 栅极间隔件形成在栅极结构的侧壁上。 第一和第二杂质区域形成在与栅极结构相邻的有源区的上部。 第一杂质区比第二杂质区更靠近凹部。 还提供了相关方法。
    • 2. 发明申请
    • Methods of Forming Semiconductor Devices Having Recessed Channels
    • 形成具有嵌入通道的半导体器件的方法
    • US20100285644A1
    • 2010-11-11
    • US12770942
    • 2010-04-30
    • Joo-Young LeeDong-Gun Park
    • Joo-Young LeeDong-Gun Park
    • H01L21/336H01L21/8242
    • H01L27/10823H01L27/10814H01L27/10852H01L27/10876
    • A semiconductor device includes a substrate, a gate insulation layer, a gate structure, a gate spacer, and first and second impurity regions. The substrate has an active region defined by an isolation layer. The active region has a gate trench thereon. The gate insulation layer is formed on an inner wall of the gate trench. The gate structure is formed on the gate insulation layer to fill the gate trench. The gate structure has a width smaller than that of the gate trench, and has a recess at a first portion thereof. The gate spacer is formed on sidewalls of the gate structure. The first and second impurity regions are formed at upper portions of the active region adjacent to the gate structure. The first impurity region is closer to the recess than the second impurity region. Related methods are also provided.
    • 半导体器件包括衬底,栅极绝缘层,栅极结构,栅极间隔物以及第一和第二杂质区域。 衬底具有由隔离层限定的有源区。 有源区在其上具有栅极沟槽。 栅极绝缘层形成在栅极沟槽的内壁上。 栅极结构形成在栅极绝缘层上以填充栅极沟槽。 栅极结构的宽度小于栅极沟槽的宽度,并且在其第一部分处具有凹部。 栅极间隔件形成在栅极结构的侧壁上。 第一和第二杂质区域形成在与栅极结构相邻的有源区的上部。 第一杂质区比第二杂质区更靠近凹部。 还提供了相关方法。
    • 3. 发明授权
    • Semiconductor devices having recessed channels
    • 具有凹槽的半导体器件
    • US08445959B2
    • 2013-05-21
    • US13586593
    • 2012-08-15
    • Joo-Young LeeDong-Gun Park
    • Joo-Young LeeDong-Gun Park
    • H01L29/66
    • H01L27/10823H01L27/10814H01L27/10852H01L27/10876
    • A semiconductor device includes a substrate, a gate insulation layer, a gate structure, a gate spacer, and first and second impurity regions. The substrate has an active region defined by an isolation layer. The active region has a gate trench thereon. The gate insulation layer is formed on an inner wall of the gate trench. The gate structure is formed on the gate insulation layer to fill the gate trench. The gate structure has a width smaller than that of the gate trench, and has a recess at a first portion thereof. The gate spacer is formed on sidewalls of the gate structure. The first and second impurity regions are formed at upper portions of the active region adjacent to the gate structure. The first impurity region is closer to the recess than the second impurity region. Related methods are also provided.
    • 半导体器件包括衬底,栅极绝缘层,栅极结构,栅极间隔物以及第一和第二杂质区域。 衬底具有由隔离层限定的有源区。 有源区在其上具有栅极沟槽。 栅极绝缘层形成在栅极沟槽的内壁上。 栅极结构形成在栅极绝缘层上以填充栅极沟槽。 栅极结构的宽度小于栅极沟槽的宽度,并且在其第一部分处具有凹部。 栅极间隔件形成在栅极结构的侧壁上。 第一和第二杂质区域形成在与栅极结构相邻的有源区的上部。 第一杂质区比第二杂质区更靠近凹部。 还提供了相关方法。
    • 4. 发明授权
    • Methods of forming semiconductor devices having recessed channels
    • 形成具有凹槽的半导体器件的方法
    • US08268690B2
    • 2012-09-18
    • US12770942
    • 2010-04-30
    • Joo-Young LeeDong-Gun Park
    • Joo-Young LeeDong-Gun Park
    • H01L21/336H01L21/3205
    • H01L27/10823H01L27/10814H01L27/10852H01L27/10876
    • A semiconductor device includes a substrate, a gate insulation layer, a gate structure, a gate spacer, and first and second impurity regions. The substrate has an active region defined by an isolation layer. The active region has a gate trench thereon. The gate insulation layer is formed on an inner wall of the gate trench. The gate structure is formed on the gate insulation layer to fill the gate trench. The gate structure has a width smaller than that of the gate trench, and has a recess at a first portion thereof. The gate spacer is formed on sidewalls of the gate structure. The first and second impurity regions are formed at upper portions of the active region adjacent to the gate structure. The first impurity region is closer to the recess than the second impurity region. Related methods are also provided.
    • 半导体器件包括衬底,栅极绝缘层,栅极结构,栅极间隔物以及第一和第二杂质区域。 衬底具有由隔离层限定的有源区。 有源区在其上具有栅极沟槽。 栅极绝缘层形成在栅极沟槽的内壁上。 栅极结构形成在栅极绝缘层上以填充栅极沟槽。 栅极结构的宽度小于栅极沟槽的宽度,并且在其第一部分处具有凹部。 栅极间隔件形成在栅极结构的侧壁上。 第一和第二杂质区域形成在与栅极结构相邻的有源区的上部。 第一杂质区比第二杂质区更靠近凹部。 还提供了相关方法。
    • 5. 发明授权
    • Display device having reduced thickness and improved luminance
    • 具有减小的厚度和改善的亮度的显示装置
    • US08692954B2
    • 2014-04-08
    • US13160287
    • 2011-06-14
    • Won-Il LeeNam-Jin JangJoo-Young Lee
    • Won-Il LeeNam-Jin JangJoo-Young Lee
    • G02F1/1335
    • G02F1/133606G02B6/0088G02F1/133615G02F2201/465G02F2201/54
    • A display device includes a display panel, a plurality of optical sheets disposed under the display panel, a light guiding plate disposed under the optical sheets and including a light guiding protrusion protruding toward a side direction from a light guiding corner, and a support frame for supporting the display panel and including a protrusion cover in the frame corner to cover the light guiding protrusion. The height of an upper surface of the protrusion cover is preferably no less than the height of an upper surface of the optical sheets. The display device prevents the problem in molding of the protrusion cover of the support frame by increasing the thickness of the protrusion cover. Accordingly, a small-sized thin film light guiding plate can be applied to the display device so that luminance of the display device can be improved, and the thickness of the display device can be reduced.
    • 显示装置包括显示面板,布置在显示面板下方的多个光学片,配置在光学片下方的导光板,具有从导光角朝向侧方突出的导光突起,以及支撑框架, 支撑显示面板并且在框架角部包括突出盖以覆盖导光突起。 突起盖的上表面的高度优选不小于光学片的上表面的高度。 显示装置通过增加突起盖的厚度来防止模制支撑框架的突出盖的问题。 因此,可以将小型薄膜导光板施加到显示装置,从而可以提高显示装置的亮度,并且可以减小显示装置的厚度。
    • 7. 发明授权
    • Display device
    • 显示设备
    • US08328404B2
    • 2012-12-11
    • US12956377
    • 2010-11-30
    • Joo-Young LeeJi-Hwan Jang
    • Joo-Young LeeJi-Hwan Jang
    • F21V7/04
    • G02B6/0088G02B6/0055G02F1/133615G02F2001/133314
    • A display device including: a display panel displaying an image; a light source unit supplying light to the display panel; a light guide including: an incidence plane facing the light source unit; an emission plane facing the display panel; and a light guide protrusion protruding in a direction perpendicular to a side of the light guide at an edge of the light guide; a reflection sheet arranged opposite to the surface of the emission plane of the light guide, and including a reflection protrusion protruding in a direction perpendicular to a side of the reflection sheet at an edge of the reflection sheet; and a supporting frame supporting an edge of the display panel, the light guide, and the reflection sheet, the supporting frame including: a light guide protrusion receiving groove receiving the light guide protrusion; and a reflection protrusion receiving groove receiving the reflection protrusion.
    • 一种显示装置,包括:显示图像的显示面板; 向所述显示面板供给光的光源单元; 导光体,包括:面对光源单元的入射面; 面向显示面板的发射平面; 以及在所述导光体的边缘处沿与所述导光体的一侧垂直的方向突出的导光体突起; 反射片,其与所述导光体的所述发射面的表面相对布置,并且包括在所述反射片的边缘处沿与所述反射片的侧面垂直的方向突出的反射突起; 以及支撑框架,支撑显示面板,导光体和反射片的边缘,所述支撑框架包括:导光突起容纳槽,其容纳所述导光突起; 以及容纳反射突起的反射突起容纳槽。
    • 9. 发明申请
    • Display Device Having Reduced Thickness and Improved Luminance
    • 显示装置具有减小的厚度和改进的亮度
    • US20120069261A1
    • 2012-03-22
    • US13160287
    • 2011-06-14
    • Won-Il LeeNam-Jin JangJoo-Young Lee
    • Won-Il LeeNam-Jin JangJoo-Young Lee
    • G02F1/1335
    • G02F1/133606G02B6/0088G02F1/133615G02F2201/465G02F2201/54
    • A display device comprises: a display panel for displaying an image; a plurality of optical sheets disposed under the display panel; a light guiding plate disposed under the optical sheets, and including a light guiding protrusion protruding toward a side direction from a light guiding corner; a support frame for supporting the display panel, and including a protrusion cover in the frame corner to cover the light guiding protrusion; and a receiving member for supporting the support frame and the light guiding plate. The height of an upper surface of the protrusion cover is preferably no less than the height of an upper surface of the optical sheets. Thus, the display device prevents the problem in molding of the protrusion cover of the support frame, covering the light guiding protrusion of the light guiding plate, due to a slim thickness of the protrusion cover by increasing the thickness of the protrusion cover. Accordingly, a small-sized thin film light guiding plate can be applied to the display device so that luminance of the display device can be improved, and the thickness of the display device can be reduced.
    • 显示装置包括:显示面板,用于显示图像; 设置在所述显示面板下方的多个光学片; 配置在所述光学片下方的导光板,具有从导光角向侧方突出的导光突起; 用于支撑所述显示面板的支撑框架,并且在所述框架角部中包括突出盖以覆盖所述导光突起; 以及用于支撑支撑框架和导光板的接收构件。 突起盖的上表面的高度优选不小于光学片的上表面的高度。 因此,通过增加突起盖的厚度,显示装置由于突起盖的厚度薄而防止了支撑框架的突出盖的成型问题,从而覆盖导光板的导光突起。 因此,可以将小型薄膜导光板施加到显示装置,从而可以提高显示装置的亮度,并且可以减小显示装置的厚度。