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1. 发明申请

US20050186603A1 Novel human thrombopoietin mutein 失效
标题翻译：新型人血小板生成素突变蛋白
公开(公告)号：US20050186603A1
公开(公告)日：2005-08-25
申请号：US11043387
申请日：2005-01-26
申请人： Joo Chung , Sang Kyu Park , Sang Myoung Ju , Hyea Ahn , Seung Wook Lim , Woo Ik Chang , Seung Kook Park , Yeo Wook Koh , Ji Soo Park
发明人： Joo Chung , Sang Kyu Park , Sang Myoung Ju , Hyea Ahn , Seung Wook Lim , Woo Ik Chang , Seung Kook Park , Yeo Wook Koh , Ji Soo Park
IPC分类号： C07K14/52 , C12Q1/68 , A61K38/18 , C07K14/475
CPC分类号： C07K14/524
摘要： The present invention relates to novel human thrombopoietin (hTPO) derivatives, and to process of preparation thereof. Particularly, sugar chains are introduced into native hTPO by substituting amino acids such as asparagine for amino acids at specific positions in native hTPO, preparing novel hTPO derivatives with high activities enhancing the platelet production in vivo. Therefore, the novel hTPO derivatives of this invention may be useful for the treatment of thrombocytopenia associated with anticancer therapy or the transplantation of bone marrow.
摘要翻译：本发明涉及新型人血小板生成素（hTPO）衍生物及其制备方法。特别地，通过用氨基酸例如天门冬酰胺在天然hTPO中的特定位置取代氨基酸，将糖链引入天然hTPO，制备具有增强体内血小板产生的高活性的新型hTPO衍生物。因此，本发明的新型hTPO衍生物可用于治疗与抗癌治疗或骨髓移植相关的血小板减少症。

2. 发明授权

US07037491B2 Human thrombopoietin comprising glycosylation sited at residues 157 and 164 失效
标题翻译：包含糖基化的人血小板生成素位于残基157和164
公开(公告)号：US07037491B2
公开(公告)日：2006-05-02
申请号：US11043387
申请日：2005-01-26
申请人： Joo Young Chung , Sang Kyu Park , Sang Myoung Ju , Hyea Kyung Ahn , Seung Wook Lim , Woo Ik Chang , Seung Kook Park , Yeo Wook Koh , Ji Soo Park
发明人： Joo Young Chung , Sang Kyu Park , Sang Myoung Ju , Hyea Kyung Ahn , Seung Wook Lim , Woo Ik Chang , Seung Kook Park , Yeo Wook Koh , Ji Soo Park
IPC分类号： C07K14/52
CPC分类号： C07K14/524
摘要： The present invention relates to novel human thrombopoietin (hTPO) derivatives, and to process of preparation thereof. Particularly, sugar chains are introduced into native hTPO by substituting amino acids such as asparagine for amino acids at specific positions in native hTPO, preparing novel hTPO derivatives with high activities enhancing the platelet production in vivo. Therefore, the novel hTPO derivatives of this invention may be useful for the treatment of thrombocytopenia associated with anticancer therapy or the transplantation of bone marrow.
摘要翻译：本发明涉及新型人血小板生成素（hTPO）衍生物及其制备方法。特别地，通过用氨基酸例如天门冬酰胺在天然hTPO中的特定位置取代氨基酸，将糖链引入天然hTPO，制备具有增强体内血小板产生的高活性的新型hTPO衍生物。因此，本发明的新型hTPO衍生物可用于治疗与抗癌治疗或骨髓移植相关的血小板减少症。

3. 发明授权

US06251780B1 Method for fabricating thin film at high temperature 有权
标题翻译：在高温下制造薄膜的方法
公开(公告)号：US06251780B1
公开(公告)日：2001-06-26
申请号：US09524394
申请日：2000-03-13
申请人： Dong Kyun Sohn , Ji Soo Park , Jong Uk Bae
发明人： Dong Kyun Sohn , Ji Soo Park , Jong Uk Bae
IPC分类号： H01L2144
CPC分类号： H01L29/665 , H01L21/28052 , H01L21/28518
摘要： A method for fabricating a semiconductor device includes the steps of forming a refractory metal film on a semiconductor substrate, forming a capping film on the refractory metal film, injecting IV group atoms into the capping film to knock atoms of the capping film into the refractory metal film, and forming a metal silicide film at an interface between the semiconductor substrate and the refractory metal film.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在半导体衬底上形成难熔金属膜，在难熔金属膜上形成封盖膜，将IV族原子注入封盖膜中，将封盖膜的原子敲入难熔金属并且在半导体衬底和难熔金属膜之间的界面处形成金属硅化物膜。

4. 发明授权

US06642592B2 Semiconductor device and method for fabricating same 有权
公开(公告)号：US06642592B2
公开(公告)日：2003-11-04
申请号：US10184991
申请日：2002-07-01
申请人： Jong Uk Bae , Ji Soo Park , Bong Soo Kim
发明人： Jong Uk Bae , Ji Soo Park , Bong Soo Kim
IPC分类号： H01L2976
CPC分类号： H01L29/66583 , H01L21/28052 , H01L29/4925 , H01L29/6656
摘要： A semiconductor device and method for fabricating the same which improves reliability of the semiconductor device is disclosed. The semiconductor device includes: a first insulating film and a gate electrode sequentially formed on a part of a semiconductor substrate; a first insulating spacer formed at both sides above the gate electrode; a second insulating spacer formed at both sides below the gate electrode; and a cobalt silicide film formed on a surface of the gate electrode at a predetermined depth. The method for fabricating the semiconductor device includes the steps of: forming a first insulating film having a hole to expose a part of a semiconductor substrate; forming a second insulating film on the exposed semiconductor substrate inside the hole; forming a gate electrode on the second insulating film to protrude more than the first insulating film; forming a first insulating spacer at both sides of an upper part of the protruded gate electrode; forming a cobalt silicide on a surface of the upper part of the gate electrode; and selectively removing the first insulating film to remain on both sides of a lower part of the gate electrode, so that a second insulating spacer is formed.

5. 发明授权

US06528401B2 Method for fabricating polycide dual gate in semiconductor device 有权
标题翻译：在半导体器件中制造多晶硅双栅极的方法
公开(公告)号：US06528401B2
公开(公告)日：2003-03-04
申请号：US09735544
申请日：2000-12-14
申请人： Jong Uk Bae , Ji Soo Park , Dong Kyun Sohn
发明人： Jong Uk Bae , Ji Soo Park , Dong Kyun Sohn
IPC分类号： H01L214763
CPC分类号： H01L21/823842 , H01L21/823835
摘要： Method for fabricating a polycide dual gate in a semiconductor device fabricates a dual gate having polycide gate electrodes. The polycide can be a cobalt polycide, for example. The method can include forming polysilicon pattern layers on a first and a second regions of a semiconductor substrate, forming a blocking layer to expose top surfaces of the polysilicon pattern layers and mask the substrate, and forming a metal layer on an entire surface and then is annealed to form a gate electrode having a stack of the polysilicon pattern layer under a silicide layer. Impurity ions of opposite conductivities in the first and second regions can be respectively deposited and diffused to form source/drain regions in surfaces of the substrate on both sides of the gate electrode. The implanted impurity ions can further implant ions in the silicide/polysilicon pattern layer gate to reduce fabrication steps or simplify the fabrication process.
摘要翻译：在半导体器件中制造多晶硅双栅极的方法制造具有多晶硅栅极电极的双栅极。例如，多硅化物可以是多硅化钴。该方法可以包括在半导体衬底的第一和第二区域上形成多晶硅图案层，形成阻挡层以暴露多晶硅图案层的顶表面并掩蔽衬底，并在整个表面上形成金属层，然后是退火以形成在硅化物层下方具有多晶硅图案层的堆叠的栅电极。第一和第二区域中相反电导率的杂质离子可以分别沉积并扩散，以在栅电极两侧的衬底表面形成源/漏区。注入的杂质离子可以在硅化物/多晶硅图案层栅极中进一步注入离子以减少制造步骤或简化制造工艺。

6. 发明授权

US06885103B2 Semiconductor device including ternary phase diffusion barrier 有权
标题翻译：包括三相相位扩散屏障的半导体器件
公开(公告)号：US06885103B2
公开(公告)日：2005-04-26
申请号：US10620608
申请日：2003-07-17
申请人： Dong Kyun Sohn , Ji Soo Park , Jong Uk Bae
发明人： Dong Kyun Sohn , Ji Soo Park , Jong Uk Bae
IPC分类号： H01L21/28 , H01L21/285 , H01L21/768 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76846 , H01L21/28518 , H01L21/76843 , H01L21/76855 , H01L21/76856 , H01L21/76858
摘要： A method for manufacturing a semiconductor device can simply form a silicide film for reducing ohmic contact between a metal line and a substrate and a ternary phase thin film as an amorphous diffusion prevention film between a metal line and the silicide film. The method for manufacturing a semiconductor device includes the steps of sequentially forming a first refractory metal and a second refractory metal on a semiconductor substrate, forming a silicide film on an interface between the semiconductor substrate and the first refractory metal, and reacting the semiconductor substrate with the first and second refractory metals on the silicide film to form a ternary phase thin film.
摘要翻译：制造半导体器件的方法可以简单地形成用于在金属线和硅化物膜之间降低金属线与衬底之间的欧姆接触的硅化物膜和作为非晶扩散防止膜的三元相薄膜。制造半导体器件的方法包括以下步骤：在半导体衬底上依次形成第一难熔金属和第二难熔金属，在半导体衬底和第一难熔金属之间的界面上形成硅化物膜，并使半导体衬底与第一和第二难熔金属在硅化物膜上形成三元相薄膜。

7. 发明授权

US06649520B1 Method of forming film for reduced ohmic contact resistance and ternary phase layer amorphous diffusion barrier 有权
标题翻译：形成用于降低欧姆接触电阻的薄膜和三元相层无定形扩散屏障的方法
公开(公告)号：US06649520B1
公开(公告)日：2003-11-18
申请号：US09461767
申请日：1999-12-15
申请人： Dong Kyun Sohn , Ji Soo Park , Jong Uk Bae
发明人： Dong Kyun Sohn , Ji Soo Park , Jong Uk Bae
IPC分类号： H01L2144
CPC分类号： H01L21/76846 , H01L21/28518 , H01L21/76843 , H01L21/76855 , H01L21/76856 , H01L21/76858
摘要： A method for manufacturing a semiconductor device can simply form a silicide film for reducing ohmic contact between a metal line and a substrate and a ternary phase thin film as an amorphous diffusion prevention film between a metal line and the silicide film. The method for manufacturing a semiconductor device includes the steps of sequentially forming a first refractory metal and a second refractory metal on a semiconductor substrate, forming a silicide film on an interface between the semiconductor substrate and the first refractory metal, and reacting the semiconductor substrate with the first and second refractory metals on the silicide film to form a ternary phase thin film.
摘要翻译：制造半导体器件的方法可以简单地形成用于在金属线和硅化物膜之间降低金属线与衬底之间的欧姆接触的硅化物膜和作为非晶扩散防止膜的三元相薄膜。制造半导体器件的方法包括以下步骤：在半导体衬底上依次形成第一难熔金属和第二难熔金属，在半导体衬底和第一难熔金属之间的界面上形成硅化物膜，并使半导体衬底与第一和第二难熔金属在硅化物膜上形成三元相薄膜。

8. 发明授权

US06455404B1 Semiconductor device and method for fabricating same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06455404B1
公开(公告)日：2002-09-24
申请号：US09710840
申请日：2000-11-14
申请人： Jong Uk Bae , Ji Soo Park , Bong Soo Kim
发明人： Jong Uk Bae , Ji Soo Park , Bong Soo Kim
IPC分类号： H01L213205
CPC分类号： H01L29/66583 , H01L21/28114 , H01L29/66553
摘要： A semiconductor device and method for fabricating the same which improves reliability of the semiconductor device is disclosed. The semiconductor device includes: a first insulating film and a gate electrode sequentially formed on a part of a semiconductor substrate; a first insulating spacer formed at both sides above the gate electrode; a second insulating spacer formed at both sides below the gate electrode; and a cobalt silicide film formed on a surface of the gate electrode at a predetermined depth. The method for fabricating the semiconductor device includes the steps of: forming a first insulating film having a hole to expose a part of a semiconductor substrate; forming a second insulating film on the exposed semiconductor substrate inside the hole; forming a gate electrode on the second insulating film to protrude more than the first insulating film; forming a first insulating spacer at both sides of an upper part of the protruded gate electrode; forming a cobalt silicide on a surface of the upper part of the gate electrode; and selectively removing the first insulating film to remain on both sides of a lower part of the gate electrode, so that a second insulating spacer is formed.
摘要翻译：公开了一种提高半导体器件的可靠性的半导体器件及其制造方法。半导体器件包括：第一绝缘膜和顺序地形成在半导体衬底的一部分上的栅电极; 形成在栅电极上方的两侧的第一绝缘间隔物; 形成在栅电极下方的两侧的第二绝缘间隔物; 以及在预定深度处形成在栅电极的表面上的钴硅化物膜。制造半导体器件的方法包括以下步骤：形成具有孔的第一绝缘膜以暴露半导体衬底的一部分; 在所述孔内的所述暴露的半导体衬底上形成第二绝缘膜; 在所述第二绝缘膜上形成栅电极以使所述第一绝缘膜突出; 在突出栅电极的上部的两侧形成第一绝缘间隔物; 在所述栅电极的上部表面上形成硅化钴; 并且选择性地去除第一绝缘膜以保留在栅电极的下部的两侧，从而形成第二绝缘间隔物。

9. 发明授权

US06342441B1 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06342441B1
公开(公告)日：2002-01-29
申请号：US09434520
申请日：1999-11-05
申请人： Ji Soo Park , Dong Kyun Son
发明人： Ji Soo Park , Dong Kyun Son
IPC分类号： H01L2122
CPC分类号： H01L21/2257 , H01L21/2652 , H01L21/28518 , H01L21/3215 , H01L29/665 , H01L29/66575
摘要： A method for fabricating a semiconductor substrate includes forming a silicide layer at a predetermined portion of a semiconductor substrate, implanting two or more impurity ions before annealing, and forming an impurity region in the semiconductor substrate by annealing the silicide layer and by diffusing the impurity ions from the silicide layer into the semiconductor substrate. Accordingly, the present invention can improve reliability and performance of a semiconductor device by reducing dopant loss and leakage current of a PN junction in the substrate and by decreasing a sheet resistance of the silicide layer. The dose of the second implanter ions is about one hundred to one thousand times less than the dose of the first implanted ions.
摘要翻译：一种制造半导体衬底的方法包括在半导体衬底的预定部分形成硅化物层，在退火之前注入两种或更多种杂质离子，以及通过退火硅化物层并通过扩散杂质离子在半导体衬底中形成杂质区从硅化物层进入半导体衬底。因此，本发明可以通过减少衬底中PN结的掺杂剂损耗和漏电流以及降低硅化物层的薄层电阻来提高半导体器件的可靠性和性能。第二注入离子的剂量比第一注入离子的剂量小约一百到一千倍。

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