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    • 1. 发明授权
    • Node for self localization, clustering method using the same, and localization method
    • 节点用于自定位,聚类方法使用相同,并定位方法
    • US07697458B2
    • 2010-04-13
    • US11759450
    • 2007-06-07
    • Jongjun ParkJong Oh LeeSun Joong KimCheol Sig PyoJong Suk Chae
    • Jongjun ParkJong Oh LeeSun Joong KimCheol Sig PyoJong Suk Chae
    • H04L12/16
    • H04W64/00H04W4/08H04W48/16H04W84/18
    • A node for self localization, a clustering method using the same, and a localization method are provided. The node, which is located in a specific space so as to constitute a sensor network, includes a location information messaging unit which receives one or more location information messages including information on spatial locations of one or more neighboring nodes in the sensor network from the neighboring nodes in the sensor network; a distance calculator which calculates a first distance to the neighboring node on the basis of the location information included in the received location information messages and calculates a second distance to one or more neighboring nodes on the basis of the received time or intensity of the message on the location information; and a clustering unit which forms clusters of the node and a plurality of neighboring nodes in which the difference between the first and second distances is less than a predetermined threshold.
    • 提供了一种用于自定位的节点,使用该节点的聚类方法和定位方法。 位于特定空间中以构成传感器网络的节点包括位置信息消息单元,其接收一个或多个位置信息消息,其包括关于传感器网络中的一个或多个相邻节点的空间位置的信息 传感器网络中的节点; 距离计算器,其基于包括在接收的位置信息消息中的位置信息计算到相邻节点的第一距离,并基于所接收的消息的时间或强度计算到一个或多个相邻节点的第二距离 位置信息; 以及聚集单元,其形成所述节点的簇和多个相邻节点,其中所述第一和第二距离之间的差小于预定阈值。
    • 4. 发明授权
    • Sense circuit for a multi-level flash memory cell
    • 用于多级闪存单元的感应电路
    • US06191977B1
    • 2001-02-20
    • US09275773
    • 1999-03-25
    • Jong Oh Lee
    • Jong Oh Lee
    • G11C1606
    • G11C11/5621G11C7/06G11C7/1006G11C11/5642G11C16/28G11C16/30G11C16/32
    • A sense circuit for multi-level flash memory cell includes a control signal generator for generating a plurality of voltage control signals, a clock signal having constant period and a plurality of control pulses according to a sense amplifier enable signal; a control voltage generator for generating multi-steps voltage according to the clock signal and the plurality of voltage control signals, sequentially supplying the multi-steps voltage to a program gate of the memory cell, generating a reference voltage according to the sense amplifier enable signal and supplying the reference voltage to a program gate of a reference cell; and a sense amplifier for sequentially comparing a plurality of data stored in the memory cell and a data of the reference cell, storing the result according to the control pulse and converting it into binary data.
    • 用于多电平闪存单元的感测电路包括用于产生多个电压控制信号的控制信号发生器,具有恒定周期的时钟信号和根据读出放大器使能信号的多个控制脉冲; 控制电压发生器,用于根据时钟信号和多个电压控制信号产生多级电压,将多级电压顺序地提供给存储单元的编程门,根据读出放大器使能信号产生参考电压 并将参考电压提供给参考单元的编程门; 以及读出放大器,用于顺序地比较存储在存储单元中的多个数据和参考单元的数据,根据控制脉冲存储结果并将其转换为二进制数据。
    • 8. 发明授权
    • Positive charge pumping circuit
    • 正电荷泵电路
    • US5977816A
    • 1999-11-02
    • US107289
    • 1998-06-30
    • Jong Oh Lee
    • Jong Oh Lee
    • G11C17/00H02M3/07G05F1/10G05F3/02
    • H02M3/073H02M2003/075
    • A positive charge pumping circuit which is capable of reducing a sheet resistance and a threshold potential drop. The pumping circuit includes a pumping node, a power supply node, a first diode and at least one pumping stage, The pumping node provides a pumping potential. The supply node provides a power supply potential. An anode of the diode is coupled to the power supply node. The pumping stages are coupled in series between the pumping node and a cathode of the first diode. Each of the pumping stages includes a driving node and a control node, a pumping driving circuit, a transfer control circuit, a charge pumping circuit, and a potential control circuit.
    • 能够减小薄层电阻和阈值电位降的正电荷泵浦电路。 泵送电路包括泵送节点,电源节点,第一二极管和至少一个泵送级。泵送节点提供泵送电位。 供电节点提供电源电位。 二极管的阳极耦合到电源节点。 泵浦级串联在泵浦节点和第一二极管的阴极之间。 每个泵送级包括驱动节点和控制节点,泵送驱动电路,转移控制电路,电荷泵送电路和电位控制电路。