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1. 发明授权

US07921901B2 Sacrificial sleeves for die casting aluminum alloys 有权
标题翻译：用于压铸铝合金的牺牲套
公开(公告)号：US07921901B2
公开(公告)日：2011-04-12
申请号：US12103755
申请日：2008-04-16
申请人： Jongcheol Shin , Jongwon B Park , Inwook Hwang , Bob R. Powell, Jr. , Thomas A. Perry , Anil K. Sachdev , Jon T. Carter
发明人： Jongcheol Shin , Jongwon B Park , Inwook Hwang , Bob R. Powell, Jr. , Thomas A. Perry , Anil K. Sachdev , Jon T. Carter
IPC分类号： B22D29/00
CPC分类号： B22D15/02 , B22D19/0009 , B22D21/04
摘要： Some die cast aluminum alloy articles have internal cylindrical surfaces such as the round internal cylinder surfaces of a cylinder block for an internal combustion engine. During casting solidification molten aluminum alloys shrink against the metallic permanent mold tools used to mold and define such internal surfaces, and tend to stick to the tool surfaces making it difficult to remove the casting. The tendency of some aluminum casting alloys to solder to the tool can further intensify sticking. In this invention, an aluminum alloy sleeve is placed on and over the tool surface before casting and the sleeve isolates the tool from the molten aluminum. The sleeve becomes bonded to the casting and facilitates removal of the casting from the tool. The sleeve may be (and preferably is) fully machined from the internal casting surface. The sleeve may be of the same composition as the casting, in which case handling and recycling of machining chips would be facilitated. The practice of the invention is also applicable to die casting of magnesium alloys using magnesium sacrificial sleeves.
摘要翻译：一些压铸铝合金制品具有诸如用于内燃机的气缸体的圆形内圆柱表面的内圆柱表面。在铸造凝固期间，熔融铝合金收缩用于模制和限定这种内表面的金属永久模具，并且倾向于粘附到工具表面，使得难以移除铸件。一些铝铸造合金焊接到工具的趋势可以进一步加剧粘附。在本发明中，铝合金套筒在铸造之前放置在工具表面上和上方，并且套筒将工具与熔融铝隔离开。套筒粘合到铸件上并便于从工具中移除铸件。套筒可以（并且优选地）从内部铸造表面完全加工。套筒可以具有与铸件相同的组成，在这种情况下，加工芯片的处理和回收将被促进。本发明的实践也适用于使用镁牺牲套管的镁合金压铸。

2. 发明申请

US20090260774A1 SACRIFICIAL SLEEVES FOR DIE CASTING ALUMINUM ALLOYS 有权
标题翻译：用于铝合金铸造的特殊工具
公开(公告)号：US20090260774A1
公开(公告)日：2009-10-22
申请号：US12103755
申请日：2008-04-16
申请人： Jongcheol Shin , Jongwon B. Park , Inwook Hwang , Bob R. Powell, JR. , Thomas A. Perry , Anil K. Sachdev , Jon T. Carter
发明人： Jongcheol Shin , Jongwon B. Park , Inwook Hwang , Bob R. Powell, JR. , Thomas A. Perry , Anil K. Sachdev , Jon T. Carter
IPC分类号： B22D29/00
CPC分类号： B22D15/02 , B22D19/0009 , B22D21/04
摘要： Some die cast aluminum alloy articles have internal cylindrical surfaces such as the round internal cylinder surfaces of a cylinder block for an internal combustion engine. During casting solidification molten aluminum alloys shrink against the metallic permanent mold tools used to mold and define such internal surfaces, and tend to stick to the tool surfaces making it difficult to remove the casting. The tendency of some aluminum casting alloys to solder to the tool can further intensify sticking. In this invention, an aluminum alloy sleeve is placed on and over the tool surface before casting and the sleeve isolates the tool from the molten aluminum. The sleeve becomes bonded to the casting and facilitates removal of the casting from the tool. The sleeve may be (and preferably is) fully machined from the internal casting surface. The sleeve may be of the same composition as the casting, in which case handling and recycling of machining chips would be facilitated. The practice of the invention is also applicable to die casting of magnesium alloys using magnesium sacrificial sleeves.
摘要翻译：一些压铸铝合金制品具有诸如用于内燃机的气缸体的圆形内圆柱表面的内圆柱表面。在铸造凝固期间，熔融铝合金收缩用于模制和限定这种内表面的金属永久模具，并且倾向于粘附到工具表面，使得难以移除铸件。一些铝铸造合金焊接到工具的趋势可以进一步加剧粘附。在本发明中，铝合金套筒在铸造之前放置在工具表面上和上方，并且套筒将工具与熔融铝隔离开。套筒粘合到铸件上并便于从工具中移除铸件。套筒可以（并且优选地）从内部铸造表面完全加工。套筒可以具有与铸件相同的组成，在这种情况下，加工芯片的处理和回收将被促进。本发明的实践也适用于使用镁牺牲套管的镁合金压铸。

3. 发明授权

US07214974B2 Image sensors for reducing dark current and methods of manufacturing the same 有权
标题翻译：用于减少暗电流的图像传感器及其制造方法
公开(公告)号：US07214974B2
公开(公告)日：2007-05-08
申请号：US11032147
申请日：2005-01-11
申请人： Jongcheol Shin
发明人： Jongcheol Shin
IPC分类号： H01L27/148
CPC分类号： H01L27/14812 , H01L27/14609 , H01L27/1463 , H01L27/14687 , H01L27/14689 , H01L27/14806
摘要： An image sensor includes a substrate region of a first conductivity type, a photodiode region of a second conductivity type located in the substrate, a hole accumulated device (HAD) region of the first conductivity type located at a surface of the substrate and over the photodiode region, and a transfer gate located over the surface of the substrate adjacent the HAD region. The image sensor further includes a first channel region of the first conductivity type located in the substrate and aligned below the transfer gate, a second channel region of the second conductivity type located in the substrate between said transfer gate and the first channel region, and an floating diffusion region which is located in the substrate and which electrically contacts the second channel region.
摘要翻译：图像传感器包括第一导电类型的衬底区域，位于衬底中的第二导电类型的光电二极管区域，位于衬底表面处的第一导电类型的空穴积聚装置（HAD）区域，以及光电二极管以及位于衬底的邻近HAD区域的表面上方的转移门。图像传感器还包括第一导电类型的第一沟道区域，位于衬底中并对准传输栅极下方，第二导电类型的第二沟道区位于衬底之间，位于所述传输门和第一沟道区之间，浮动扩散区，其位于衬底中并与第二沟道区电接触。

4. 发明申请

US20050280046A1 Image sensors for reducing dark current and methods of manufacturing the same 有权
标题翻译：用于减少暗电流的图像传感器及其制造方法
公开(公告)号：US20050280046A1
公开(公告)日：2005-12-22
申请号：US11032147
申请日：2005-01-11
申请人： Jongcheol Shin
发明人： Jongcheol Shin
IPC分类号： H01L27/146 , H01L27/148
CPC分类号： H01L27/14812 , H01L27/14609 , H01L27/1463 , H01L27/14687 , H01L27/14689 , H01L27/14806
摘要： An image sensor includes a substrate region of a first conductivity type, a photodiode region of a second conductivity type located in the substrate, a hole accumulated device (HAD) region of the first conductivity type located at a surface of the substrate and over the photodiode region, and a transfer gate located over the surface of the substrate adjacent the HAD region. The image sensor further includes a first channel region of the first conductivity type located in the substrate and aligned below the transfer gate, a second channel region of the second conductivity type located in the substrate between said transfer gate and the first channel region, and an floating diffusion region which is located in the substrate and which electrically contacts the second channel region.
摘要翻译：图像传感器包括第一导电类型的衬底区域，位于衬底中的第二导电类型的光电二极管区域，位于衬底表面处的第一导电类型的空穴积聚装置（HAD）区域，以及光电二极管以及位于衬底的邻近HAD区域的表面上方的转移门。图像传感器还包括第一导电类型的第一沟道区域，位于衬底中并对准传输栅极下方，第二导电类型的第二沟道区位于所述衬底之间的所述传输门和第一沟道区之间，浮动扩散区，其位于衬底中并与第二沟道区电接触。

5. 发明授权

US07410823B2 Image sensors for reducing dark current and methods of manufacturing the same 有权
标题翻译：用于减少暗电流的图像传感器及其制造方法
公开(公告)号：US07410823B2
公开(公告)日：2008-08-12
申请号：US11707897
申请日：2007-02-20
申请人： Jongcheol Shin
发明人： Jongcheol Shin
IPC分类号： H01L21/00
CPC分类号： H01L27/14601 , H01L27/14609 , H01L27/14806
摘要： An image sensor includes a substrate region of a first conductivity type, a photodiode region of a second conductivity type located in the substrate, a hole accumulated device (HAD) region of the first conductivity type located at a surface of the substrate and over the photodiode region, and a transfer gate located over the surface of the substrate adjacent the HAD region. The image sensor further includes a first channel region of the first conductivity type located in the substrate and aligned below the transfer gate, a second channel region of the second conductivity type located in the substrate between said transfer gate and the first channel region, and an floating diffusion region which is located in the substrate and which electrically contacts the second channel region.
摘要翻译：图像传感器包括第一导电类型的衬底区域，位于衬底中的第二导电类型的光电二极管区域，位于衬底表面上方的第一导电类型的空穴积聚装置（HAD）区域，以及光电二极管以及位于衬底的邻近HAD区域的表面上方的转移门。图像传感器还包括第一导电类型的第一沟道区域，位于衬底中并对准传输栅极下方，第二导电类型的第二沟道区位于衬底之间，位于所述传输门和第一沟道区之间，浮动扩散区，其位于衬底中并与第二沟道区电接触。

6. 发明申请

US20070207599A1 Image sensors for reducing dark current and methods of manufacturing the same 有权
公开(公告)号：US20070207599A1
公开(公告)日：2007-09-06
申请号：US11707897
申请日：2007-02-20
申请人： Jongcheol Shin
发明人： Jongcheol Shin
IPC分类号： H01L21/04
CPC分类号： H01L27/14601 , H01L27/14609 , H01L27/14806
摘要： An image sensor includes a substrate region of a first conductivity type, a photodiode region of a second conductivity type located in the substrate, a hole accumulated device (HAD) region of the first conductivity type located at a surface of the substrate and over the photodiode region, and a transfer gate located over the surface of the substrate adjacent the HAD region. The image sensor further includes a first channel region of the first conductivity type located in the substrate and aligned below the transfer gate, a second channel region of the second conductivity type located in the substrate between said transfer gate and the first channel region, and an floating diffusion region which is located in the substrate and which electrically contacts the second channel region.

7. 发明授权

US09356067B2 Image sensors including a gate electrode surrounding a floating diffusion region 有权
标题翻译：图像传感器包括围绕浮动扩散区域的栅电极
公开(公告)号：US09356067B2
公开(公告)日：2016-05-31
申请号：US14294781
申请日：2014-06-03
申请人： Jongcheol Shin
发明人： Jongcheol Shin
IPC分类号： H01L27/148 , H01L27/146
CPC分类号： H01L27/14643 , H01L27/14607 , H01L27/14614 , H01L27/14616 , H01L27/14638 , H01L27/1464 , H01L27/14645 , H01L27/14689
摘要： Image sensors are provided. The image sensors may include first and second stacked impurity regions having different conductivity types. The image sensors may also include a floating diffusion region in the first impurity region. The image sensors may further include a transfer gate electrode surrounding the floating diffusion region in the first impurity region. Also, the transfer gate electrode and the floating diffusion region may overlap the second impurity region.
摘要翻译：提供图像传感器。图像传感器可以包括具有不同导电类型的第一和第二堆叠的杂质区。图像传感器还可以包括第一杂质区域中的浮动扩散区域。图像传感器还可以包括围绕第一杂质区域中的浮动扩散区域的传输栅极电极。此外，传输栅极电极和浮动扩散区域可以与第二杂质区域重叠。

8. 发明申请

US20140284664A1 IMAGE SENSORS INCLUDING A GATE ELECTRODE SURROUNDING A FLOATING DIFFUSION REGION 审中-公开
标题翻译：图像传感器，包括门控电极环绕浮动扩展区域
公开(公告)号：US20140284664A1
公开(公告)日：2014-09-25
申请号：US14294781
申请日：2014-06-03
申请人： Jongcheol Shin
发明人： Jongcheol Shin
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L27/14607 , H01L27/14614 , H01L27/14616 , H01L27/14638 , H01L27/1464 , H01L27/14645 , H01L27/14689
摘要： Image sensors are provided. The image sensors may include first and second stacked impurity regions having different conductivity types. The image sensors may also include a floating diffusion region in the first impurity region. The image sensors may further include a transfer gate electrode surrounding the floating diffusion region in the first impurity region. Also, the transfer gate electrode and the floating diffusion region may overlap the second impurity region.
摘要翻译：提供图像传感器。图像传感器可以包括具有不同导电类型的第一和第二堆叠杂质区。图像传感器还可以包括第一杂质区域中的浮动扩散区域。图像传感器还可以包括围绕第一杂质区域中的浮动扩散区域的传输栅极电极。此外，传输栅极电极和浮动扩散区域可以与第二杂质区域重叠。

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