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    • 4. 发明授权
    • Bidirectional optical transceiver module
    • 双向光收发模块
    • US08277132B2
    • 2012-10-02
    • US12607730
    • 2009-10-28
    • Jong-jin LeeHyun-seo KangJai-sang Koh
    • Jong-jin LeeHyun-seo KangJai-sang Koh
    • G02B6/36
    • G02B6/4246G02B6/4206G02B6/4271
    • A bidirectional optical transceiver module with a temperature control function is provided. The bidirectional optical transceiver module includes a package configured to have a flat bottom surface and include two windows used for optical transmission and reception; a ferrule configured to be coupled to one side of the package and allow an optical fiber to be inserted therein; an optical receiver module configured to be coupled to another side of the package in a direction perpendicular to that of the ferrule coupled to the package; a sub-optical transmitter module configured to be built in the package and include a light-emitting element and a collimating lens used to collimate light from the light-emitting element; an optical filter configured to be built in the package, transmit light from the light-emitting element to the optical fiber and reflect light received through the optical fiber to the optical receiver module; and a temperature regulator configured to be built in the package and control the sub-optical transmitter module to a preset temperature. Accordingly, it is possible to reduce the manufacturing cost of the package, effectively discharge heat, and be more endurable to external impact or vibration.
    • 提供了具有温度控制功能的双向光收发模块。 双向光收发器模块包括被配置为具有平坦的底表面并且包括用于光学传输和接收的两个窗口的封装; 套圈,被配置为耦合到所述封装的一侧并允许光纤插入其中; 光接收器模块,被配置为在垂直于耦合到封装的套圈的方向上耦合到封装的另一侧; 子光发射机模块,被配置为内置在所述封装中并且包括发光元件和用于准直来自所述发光元件的光的准直透镜; 配置成内置在封装中的滤光器,将来自发光元件的光透射到光纤,并将通过光纤接收的光反射到光接收器模块; 以及温度调节器,其被配置为内置在所述封装中并将所述子光发射器模块控制到预设温度。 因此,可以降低包装的制造成本,有效地排出热量,并且能够更耐外部冲击或振动。
    • 8. 发明授权
    • CMOS image sensor configured to provide reduced leakage current
    • CMOS图像传感器配置为提供减小的漏电流
    • US08013365B2
    • 2011-09-06
    • US12403794
    • 2009-03-13
    • Ju-hyun KoJong-jin LeeJung-chak Ahn
    • Ju-hyun KoJong-jin LeeJung-chak Ahn
    • H01L29/66
    • H01L27/14603
    • A complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) includes a semiconductor substrate including a photodiode therein as a light sensing unit. A floating diffusion region of a first conductivity type is provided in the semiconductor substrate, and is configured to receive charges generated in the photodiode. A power supply voltage region of the first conductivity type is also provided in the semiconductor substrate. A reset transistor including a reset gate electrode on a surface of the substrate between the floating diffusion region and a power supply voltage region is configured to discharge charges stored in the floating diffusion region in response to a reset control signal. The reset transistor includes a channel region in the substrate extending between the floating diffusion region and the power supply voltage region such that the floating diffusion region and the power supply voltage regions define source/drain regions for the reset transistor. An impurity region is provided in a first portion of the channel region adjacent to the floating diffusion region. The impurity region has a doping such that the first portion of the channel region adjacent to the floating diffusion region has a different built-in potential than a second portion of the channel region adjacent to the power supply voltage region.
    • 互补金属氧化物半导体(CMOS)图像传感器(CIS)包括其中包括其中的光电二极管作为光感测单元的半导体衬底。 第一导电类型的浮动扩散区域设置在半导体衬底中,并且被配置为接收在光电二极管中产生的电荷。 第一导电类型的电源电压区域也设置在半导体衬底中。 包括在浮置扩散区域和电源电压区域之间的衬底表面上的复位栅电极的复位晶体管被配置为响应于复位控制信号而放电存储在浮动扩散区域中的电荷。 所述复位晶体管包括在所述衬底中的在所述浮动扩散区域和所述电源电压区域之间延伸的沟道区域,使得所述浮动扩散区域和所述电源电压区域限定所述复位晶体管的源极/漏极区域。 杂质区设置在与浮动扩散区相邻的沟道区的第一部分中。 杂质区域具有使得与浮动扩散区域相邻的沟道区域的第一部分具有与与电源电压区域相邻的沟道区域的第二部分不同的内置电位的掺杂。
    • 10. 发明申请
    • CMOS IMAGE SENSOR CONFIGURED TO PROVIDE REDUCED LEAKAGE CURRENT
    • CMOS图像传感器被配置为提供减少的漏电流
    • US20090230444A1
    • 2009-09-17
    • US12403794
    • 2009-03-13
    • Ju-hyun KoJong-jin LeeJung-chak Ahn
    • Ju-hyun KoJong-jin LeeJung-chak Ahn
    • H01L31/112
    • H01L27/14603
    • A complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) includes a semiconductor substrate including a photodiode therein as a light sensing unit. A floating diffusion region of a first conductivity type is provided in the semiconductor substrate, and is configured to receive charges generated in the photodiode. A power supply voltage region of the first conductivity type is also provided in the semiconductor substrate. A reset transistor including a reset gate electrode on a surface of the substrate between the floating diffusion region and a power supply voltage region is configured to discharge charges stored in the floating diffusion region in response to a reset control signal. The reset transistor includes a channel region in the substrate extending between the floating diffusion region and the power supply voltage region such that the floating diffusion region and the power supply voltage regions define source/drain regions for the reset transistor. An impurity region is provided in a first portion of the channel region adjacent to the floating diffusion region. The impurity region has a doping such that the first portion of the channel region adjacent to the floating diffusion region has a different built-in potential than a second portion of the channel region adjacent to the power supply voltage region.
    • 互补金属氧化物半导体(CMOS)图像传感器(CIS)包括其中包括其中的光电二极管作为光感测单元的半导体衬底。 第一导电类型的浮动扩散区域设置在半导体衬底中,并且被配置为接收在光电二极管中产生的电荷。 第一导电类型的电源电压区域也设置在半导体衬底中。 包括在浮置扩散区域和电源电压区域之间的衬底表面上的复位栅电极的复位晶体管被配置为响应于复位控制信号而放电存储在浮动扩散区域中的电荷。 所述复位晶体管包括在所述衬底中的在所述浮动扩散区域和所述电源电压区域之间延伸的沟道区域,使得所述浮动扩散区域和所述电源电压区域限定所述复位晶体管的源极/漏极区域。 杂质区设置在与浮动扩散区相邻的沟道区的第一部分中。 杂质区域具有使得与浮动扩散区域相邻的沟道区域的第一部分具有与与电源电压区域相邻的沟道区域的第二部分不同的内置电位的掺杂。