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1. 发明授权

US08404514B2 Fabricating current-confining structures in phase change memory switch cells 有权
标题翻译：在相变存储器开关单元中制造电流限制结构
公开(公告)号：US08404514B2
公开(公告)日：2013-03-26
申请号：US13553948
申请日：2012-07-20
申请人： Jong-Won Sean Lee , DerChang Kau , Gianpaolo Spadini
发明人： Jong-Won Sean Lee , DerChang Kau , Gianpaolo Spadini
IPC分类号： H01L21/00
CPC分类号： H01L45/1675 , H01L27/2427 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144
摘要： In one or more embodiments, methods of fabricating current-confining stack structures in a phase-change memory switch (PCMS) cell are provided. One embodiment shows a method of fabricating a PCMS cell with current in an upper chalcogenide confined in the row and column directions. In one embodiment, methods of fabricating a PCMS cell with sub-lithographic critical dimension memory chalcogenide are shown. In another embodiment, methods of fabricating a PCMS cell with sub-lithographic critical dimension middle electrode heaters are disclosed.
摘要翻译：在一个或多个实施例中，提供了在相变存储器开关（PCMS）单元中制造电流限制堆叠结构的方法。一个实施例示出了制造具有限制在行和列方向上的上硫属化物中的电流的PCMS电池的方法。在一个实施例中，示出了制造具有亚光刻临界尺度存储硫族化物的PCMS单元的方法。在另一个实施例中，公开了制造具有亚光刻临界尺寸中间电极加热器的PCMS单元的方法。

2. 发明授权

US08278641B2 Fabricating current-confining structures in phase change memory switch cells 有权
标题翻译：在相变存储器开关单元中制造电流限制结构
公开(公告)号：US08278641B2
公开(公告)日：2012-10-02
申请号：US12646267
申请日：2009-12-23
申请人： Jong-Won Sean Lee , DerChang Kau , Gianpaolo Spadini
发明人： Jong-Won Sean Lee , DerChang Kau , Gianpaolo Spadini
IPC分类号： H01L47/00
CPC分类号： H01L45/1675 , H01L27/2427 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144
摘要： In one or more embodiments, methods of fabricating current-confining stack structures in a phase change memory switch (PCMS) cell are provided. One embodiment shows a method of fabricating a PCMS cell with current in an upper chalcogenide confined in the row and column directions. In one embodiment, methods of fabricating a PCMS cell with sub-lithographic critical dimension memory chalcogenide are shown. In another embodiment, methods of fabricating a PCMS cell with sub-lithographic critical dimension middle electrode heaters are disclosed.
摘要翻译：在一个或多个实施例中，提供了在相变存储器开关（PCMS）单元中制造电流限制堆叠结构的方法。一个实施例示出了制造具有限制在行和列方向上的上硫属化物中的电流的PCMS电池的方法。在一个实施例中，示出了制造具有亚光刻临界尺度存储硫族化物的PCMS单元的方法。在另一个实施例中，公开了制造具有亚光刻临界尺寸中间电极加热器的PCMS单元的方法。

3. 发明申请

US20110147695A1 FABRICATING CURRENT-CONFINING STRUCTURES IN PHASE CHANGE MEMORY SWITCH CELLS 有权
标题翻译：在相变记忆切换电池中制作电流结构
公开(公告)号：US20110147695A1
公开(公告)日：2011-06-23
申请号：US12646267
申请日：2009-12-23
申请人： Jong-Won Sean Lee , Derchang Kau , Gianpaolo Spadini
发明人： Jong-Won Sean Lee , Derchang Kau , Gianpaolo Spadini
IPC分类号： H01L45/00 , H01L21/36
CPC分类号： H01L45/1675 , H01L27/2427 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144
摘要： In one or more embodiments, methods of fabricating current-confining stack structures in a phase change memory switch (PCMS) cell are provided. One embodiment shows a method of fabricating a PCMS cell with current in an upper chalcogenide confined in the row and column directions. In one embodiment, methods of fabricating a PCMS cell with sub-lithographic critical dimension memory chalcogenide are shown. In another embodiment, methods of fabricating a PCMS cell with sub-lithographic critical dimension middle electrode heaters are disclosed.
摘要翻译：在一个或多个实施例中，提供了在相变存储器开关（PCMS）单元中制造电流限制堆叠结构的方法。一个实施例示出了制造具有限制在行和列方向上的上硫属化物中的电流的PCMS电池的方法。在一个实施例中，示出了制造具有亚光刻临界尺度存储硫族化物的PCMS单元的方法。在另一个实施例中，公开了制造具有亚光刻临界尺寸中间电极加热器的PCMS单元的方法。

4. 发明授权

US08765581B2 Self-aligned cross-point phase change memory-switch array 有权
标题翻译：自对准交叉点相变存储器开关阵列
公开(公告)号：US08765581B2
公开(公告)日：2014-07-01
申请号：US13472053
申请日：2012-05-15
申请人： Jong Won Lee , Gianpaolo Spadini , Derchang Kau
发明人： Jong Won Lee , Gianpaolo Spadini , Derchang Kau
IPC分类号： H01L21/20
CPC分类号： H01L27/2463 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/144 , H01L45/1608 , H01L45/1675
摘要： Subject matter disclosed herein relates to a memory device, and more particularly to a self-aligned cross-point phase change memory-switch array and methods of fabricating same.
摘要翻译：本文公开的主题涉及存储器件，更具体地涉及自对准交叉点相变存储器开关阵列及其制造方法。

5. 发明申请

US20120225534A1 SELF-ALIGNED CROSS-POINT PHASE CHANGE MEMORY-SWITCH ARRAY 有权
标题翻译：自对准交叉点相位变化记忆开关阵列
公开(公告)号：US20120225534A1
公开(公告)日：2012-09-06
申请号：US13472053
申请日：2012-05-15
申请人： Jong Won Lee , Gianpaolo Spadini , Derchang Kau
发明人： Jong Won Lee , Gianpaolo Spadini , Derchang Kau
IPC分类号： H01L45/00
CPC分类号： H01L27/2463 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/144 , H01L45/1608 , H01L45/1675
摘要： Subject matter disclosed herein relates to a memory device, and more particularly to a self-aligned cross-point phase change memory-switch array and methods of fabricating same.
摘要翻译：本文公开的主题涉及存储器件，更具体地涉及自对准交叉点相变存储器开关阵列及其制造方法。

6. 发明申请

US20120282752A1 FABRICATING CURRENT-CONFINING STRUCTURES IN PHASE CHANGE MEMORY SWITCH CELLS 有权
标题翻译：在相变记忆切换电池中制作电流结构
公开(公告)号：US20120282752A1
公开(公告)日：2012-11-08
申请号：US13553948
申请日：2012-07-20
申请人： Jong Won Lee , DerChang Kau , Gianpaolo Spadini
发明人： Jong Won Lee , DerChang Kau , Gianpaolo Spadini
IPC分类号： H01L21/8239
CPC分类号： H01L45/1675 , H01L27/2427 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144
摘要： In one or more embodiments, methods of fabricating current-confining stack structures in a phase change memory switch (PCMS) cell are provided. One embodiment shows a method of fabricating a PCMS cell with current in an upper chalcogenide confined in the row and column directions. In one embodiment, methods of fabricating a PCMS cell with sub-lithographic critical dimension memory chalcogenide are shown. In another embodiment, methods of fabricating a PCMS cell with sub-lithographic critical dimension middle electrode heaters are disclosed.
摘要翻译：在一个或多个实施例中，提供了在相变存储器开关（PCMS）单元中制造电流限制堆叠结构的方法。一个实施例示出了制造具有限制在行和列方向上的上硫属化物中的电流的PCMS电池的方法。在一个实施例中，示出了制造具有亚光刻临界尺度存储硫族化物的PCMS单元的方法。在另一个实施例中，公开了制造具有亚光刻临界尺寸中间电极加热器的PCMS单元的方法。

7. 发明授权

US08184469B2 Stored multi-bit data characterized by multiple-dimensional memory states 有权
标题翻译：以多维存储状态为特征的多位数据存储
公开(公告)号：US08184469B2
公开(公告)日：2012-05-22
申请号：US12627234
申请日：2009-11-30
申请人： Johannes A. Kalb , DerChang Kau , Gianpaolo Spadini
发明人： Johannes A. Kalb , DerChang Kau , Gianpaolo Spadini
IPC分类号： G11C11/00
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0002 , G11C2013/0052 , G11C2013/0092
摘要： A method for enhancing data storage may comprise storing two or more bits in a memory cell, wherein the stored bits may be characterized by two or more independent variables based, at least in part, on physical properties of the memory cell.
摘要翻译：用于增强数据存储的方法可以包括在存储器单元中存储两个或多个位，其中存储的位可以由至少部分地基于存储单元的物理特性的两个或多个独立变量来表征。

8. 发明申请

US20100165716A1 NONVOLATILE MEMORY WITH OVONIC THRESHOLD SWITCHES 审中-公开
标题翻译：具有OVONIC THRESHOLD开关的非易失性存储器
公开(公告)号：US20100165716A1
公开(公告)日：2010-07-01
申请号：US12346700
申请日：2008-12-30
申请人： Derchang Kau , Greg Atwood , Gianpaolo Spadini
发明人： Derchang Kau , Greg Atwood , Gianpaolo Spadini
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C8/14 , G11C13/0004 , G11C13/0028 , G11C13/003 , G11C2213/76
摘要： A memory device including a plurality of memory cells being arranged in a matrix having a plurality of rows and a plurality of columns. Each memory cell includes a storage element and a selector for selecting the corresponding storage element during a reading operation or a programming operation. The memory device further including a plurality of row lines each one for selecting the memory cells of a corresponding row and a plurality of column lines each one for selecting the memory cells of a corresponding column. The memory device further includes for each line among the row lines and/or the column lines a respective set of local lines each one for selecting a group of memory cells of the corresponding line, and a respective set of selection elements each one for selecting a corresponding local line of the set in response to the selection of the respective line.
摘要翻译：一种存储器件，包括多个存储单元，其被布置在具有多行和多列的矩阵中。每个存储单元包括存储元件和选择器，用于在读取操作或编程操作期间选择相应的存储元件。所述存储装置还包括多个行线，每行用于选择相应行的存储单元和多个列线，每一行用于选择相应列的存储单元。存储装置还包括行行和/或列行中的每行，各自的一组本地线，每一行用于选择相应行的一组存储单元，以及各自的选择元素组，每一组用于选择响应于相应行的选择，该集合的对应本地行。

9. 发明授权

US08385100B2 Energy-efficient set write of phase change memory with switch 有权
标题翻译：带开关的节能型写入相变存储器
公开(公告)号：US08385100B2
公开(公告)日：2013-02-26
申请号：US12653092
申请日：2009-12-08
申请人： Derchang Kau , Johannes Kalb , Elijah Karpov , Gianpaolo Spadini
发明人： Derchang Kau , Johannes Kalb , Elijah Karpov , Gianpaolo Spadini
IPC分类号： G11C11/00
CPC分类号： G11C13/0004 , G11C13/003 , G11C13/004 , G11C13/0069 , G11C2013/008 , G11C2213/76
摘要： Embodiments of apparatus and methods for an energy efficient set write of phase change memory with switch are generally described herein. Other embodiments may be described and claimed.
摘要翻译：这里通常描述用于具有开关的相变存储器的能量效率设置写入的装置和方法的实施例。可以描述和要求保护其他实施例。

10. 发明申请

US20130294152A1 APPARATUSES AND METHODS INCLUDING MEMORY ACCESS IN CROSS POINT MEMORY 有权
标题翻译：包含存储器访问的装置和方法在交叉点存储器中
公开(公告)号：US20130294152A1
公开(公告)日：2013-11-07
申请号：US13465579
申请日：2012-05-07
申请人： DerChang Kau , Gianpaolo Spadini
发明人： DerChang Kau , Gianpaolo Spadini
IPC分类号： G11C11/00 , H01L21/8239
CPC分类号： G11C13/0069 , G11C13/0004 , G11C13/0023 , G11C13/0026 , G11C13/0028 , G11C13/004 , G11C13/0097 , G11C16/08 , G11C16/24 , H01L23/528 , H01L27/2427 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/141 , H01L45/144 , H01L2924/0002 , H01L2924/00
摘要： Some embodiments include apparatuses and methods having a memory cell, first and second conductive lines configured to access the memory cell, and a switch configured to apply a signal to one of the first and second conductive lines. In at least one of such embodiments, the switch can include a phase change material. Other embodiments including additional apparatuses and methods are described.
摘要翻译：一些实施例包括具有存储器单元，被配置为访问存储单元的第一和第二导线以及被配置为向第一和第二导线中的一个施加信号的开关的装置和方法。在这样的实施例中的至少一个中，开关可以包括相变材料。描述包括附加装置和方法的其他实施例。

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