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    • 5. 发明授权
    • Thin film deposition apparatus
    • 薄膜沉积装置
    • US08696815B2
    • 2014-04-15
    • US12873689
    • 2010-09-01
    • Young-Mook ChoiChang-Mog JoHee-Cheol KangHyun-Sook Park
    • Young-Mook ChoiChang-Mog JoHee-Cheol KangHyun-Sook Park
    • C23C16/00
    • C23C16/52C23C14/042C23C14/12C23C14/243H01L51/0011H01L51/56
    • A thin film deposition apparatus that forms a thin film on a substrate includes: a deposition source that discharges a deposition material; a deposition source nozzle unit that is disposed at a side of the deposition source and includes a plurality of deposition source nozzles; a patterning slit sheet that is disposed opposite to the deposition source nozzle unit and includes a plurality of patterning slits; and a blocking member that is disposed between the substrate and the deposition source, wherein the thin film deposition apparatus is separated from the substrate by a predetermined distance, the substrate is moved relative to the thin film deposition apparatus, and the blocking member is moved along with the substrate to screen at least one portion of the substrate.
    • 在衬底上形成薄膜的薄膜沉积装置包括:放电沉积材料的沉积源; 沉积源喷嘴单元,其设置在所述沉积源的一侧并且包括多个沉积源喷嘴; 图案化缝隙片,其与所述沉积源喷嘴单元相对设置并且包括多个图案化缝隙; 以及设置在所述基板和所述沉积源之间的阻挡构件,其中所述薄膜沉积设备与所述基板分离预定距离,所述基板相对于所述薄膜沉积设备移动,并且所述阻挡构件沿着 其中所述衬底筛选所述衬底的至少一部分。
    • 10. 发明申请
    • SPUTTERING SYSTEM
    • 喷射系统
    • US20110168553A1
    • 2011-07-14
    • US12825285
    • 2010-06-28
    • Seung-Ho ChoiSuk-Won JungYoung-Mook ChoiHyun-Keun Song
    • Seung-Ho ChoiSuk-Won JungYoung-Mook ChoiHyun-Keun Song
    • C23C14/35
    • C23C14/352H01J37/32449H01J37/3405H01J37/3417H01J37/345H01J37/347
    • A sputtering system is disclosed. The sputtering system includes: a first sputter unit including: a first deposition material plate, a second deposition material plate, where the first and second deposition material plates face each other, and a first magnetic field generator disposed behind each of the first deposition material plate and the second deposition material plate, configured to generate a magnetic field, a second sputter unit including: a third deposition material plate, disposed next to the first deposition material plate, a fourth deposition material plate, disposed next to the second deposition plate, where the third and fourth deposition material plates face each other, and a second magnetic field generator disposed behind each of the third deposition material plate and the fourth deposition material plate, configured to generate a magnetic field, a first gas supply pipe disposed between the first and third deposition material plates, configured to discharge gas to the second and fourth deposition material plates, a second gas supply pipe disposed between the second fourth deposition material plates, configured to discharge gas to the first and third deposition material plates, a first substrate support unit, configured to support a first deposition substrate, oriented toward outer edges of the first and second deposition material plates, and a second substrate support unit, configured to support a second deposition substrate, oriented toward outer edges of the third and fourth deposition material plates.
    • 公开了溅射系统。 溅射系统包括:第一溅射单元,包括:第一沉积材料板,第二沉积材料板,其中第一和第二沉积材料板彼此面对;以及第一磁场发生器,其布置在每个第一沉积材料板的后面 和第二沉积材料板,被配置为产生磁场;第二溅射单元,包括:第三沉积材料板,设置在第一沉积材料板旁边;第四沉积材料板,设置在第二沉积板旁边,其中 所述第三和第四沉积材料板彼此面对;以及第二磁场发生器,设置在每个所述第三沉积材料板和所述第四沉积材料板的后面,被配置为产生磁场;第一气体供给管,设置在所述第一和第二沉积材料板之间, 第三沉积材料板,被配置为将气体排放到第二和第四沉积物 第二气体供给管,设置在第二第四沉积材料板之间,被配置为将气体排放到第一和第三沉积材料板;第一基板支撑单元,被配置为支撑第一沉积基板, 第一和第二沉积材料板和第二衬底支撑单元,其被配置为支撑朝向第三和第四沉积材料板的外边缘定向的第二沉积衬底。