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1. 发明申请

US20110124195A1 Chemical Mechanical Polishing Composition Containing Polysilicon Polish Finisher 审中-公开
标题翻译：含有多晶硅抛光整理剂的化学机械抛光组合物
公开(公告)号：US20110124195A1
公开(公告)日：2011-05-26
申请号：US13055322
申请日：2009-07-22
申请人： Hyu-Bum Park , Dae-Sung Kim , Jong-Kwan Park , Jung-Ryul Ahn
发明人： Hyu-Bum Park , Dae-Sung Kim , Jong-Kwan Park , Jung-Ryul Ahn
IPC分类号： H01L21/306 , C09K13/00 , C09K13/02 , C09K13/06
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/31053
摘要： Provided are a chemical mechanical polishing (CMP) composition used for polishing a semiconductor device which contains polysilicon film and insulator, and a chemical mechanical polishing method thereof. The CMP composition is especially useful in a isolation CMP process for semiconductor devices. Provided is a highly selective CMP composition containing a polysilicon polish finisher which can selectively polish semiconductor insulators since it uses a polysilicon film as a polish finishing film.
摘要翻译：提供了用于研磨含有多晶硅膜和绝缘体的半导体器件的化学机械抛光（CMP）组合物及其化学机械抛光方法。 CMP组合物在用于半导体器件的隔离CMP工艺中是特别有用的。提供了一种高选择性CMP组合物，其包含多晶硅抛光整理剂，其可以选择性地抛光半导体绝缘体，因为它使用多晶硅膜作为抛光整理膜。

2. 发明申请

US20090298289A1 Chemical Mechanical Polishing Composition for Copper Comprising Zeolite 审中-公开
标题翻译：包含沸石的铜的化学机械抛光组合物
公开(公告)号：US20090298289A1
公开(公告)日：2009-12-03
申请号：US12295521
申请日：2007-03-29
申请人： Eun-Il Jeong , Hyu-Bum Park , Seok-Ju Kim , Deok-Su Han , Jung-Ryul Ahn , Jong-Kwan Park , Kui-Jong Baek
发明人： Eun-Il Jeong , Hyu-Bum Park , Seok-Ju Kim , Deok-Su Han , Jung-Ryul Ahn , Jong-Kwan Park , Kui-Jong Baek
IPC分类号： H01L21/463 , C09K13/00 , H01L21/465
CPC分类号： H01L21/3212 , C09G1/02
摘要： The present invention relates to a novel slurry composition for copper polishing, comprising zeolite which is a porous crystalline material for CMP of copper film in a semiconductor manufacturing process. The slurry composition according to the present invention comprises zeolite, an oxidant and a polish promoting agent and may further comprise a corrosion inhibitor, a surfactant, an aminoalcohol, an antiseptic and a dispersion agent and pH is in a range of 1 to 7. The zeolite slurry according to the present invention has advantages of absorbing and removing metal cation generated in CMP process by using zeolite and having a low level of scratches as the zeolite has micropores therein and thus its hardness is low. The slurry composition using zeolite of the present invention is usable to both first and second step polishing of copper damascene process and particularly useful as the first step polishing slurry for copper.
摘要翻译：本发明涉及一种用于铜抛光的新型浆料组合物，其包含沸石，其是在半导体制造工艺中用于铜膜的CMP的多孔结晶材料。根据本发明的浆料组合物包含沸石，氧化剂和抛光促进剂，并且还可以包含腐蚀抑制剂，表面活性剂，氨基醇，防腐剂和分散剂，并且pH在1至7的范围内。根据本发明的沸石浆料具有通过使用沸石吸收和去除在CMP工艺中产生的金属阳离子并具有低水平划痕的优点，因为沸石在其中具有微孔，因此其硬度低。使用本发明的沸石的浆料组合物可用于铜镶嵌方法的第一和第二阶段抛光，并且特别可用作铜的第一步抛光浆料。

3. 发明授权

US07052648B2 Method for manufacturing flange for compressor 有权
标题翻译：制造压缩机法兰的方法
公开(公告)号：US07052648B2
公开(公告)日：2006-05-30
申请号：US10471496
申请日：2001-04-04
申请人： Jong-Kwan Park
发明人： Jong-Kwan Park
IPC分类号： B22F3/12
CPC分类号： B22F5/10 , F01C21/108 , Y10T29/49236
摘要： To manufacture a flange for a compressor with a relief groove by using powder metallurgy in order to prevent deformation of the compressor in operation, powder material for the flange is charged into a mold; an ablative member having a melting point lower than that of the powder material is positioned at a place where a relief groove is to be formed; the flange is formed by compressing the powder material and the ablative member; and the formed flange is sintered at a temperature between the melting points of the power material and the ablative member so as to melt and remove the ablative member.
摘要翻译：为了通过使用粉末冶金制造具有释放槽的压缩机的凸缘，以防止压缩机在运行中变形，用于法兰的粉末材料装入模具中; 具有比粉末材料低的熔点的烧蚀构件位于要形成释放槽的位置; 凸缘通过压缩粉末材料和烧蚀构件形成; 并且形成的凸缘在动力材料和烧蚀构件的熔点之间的温度下烧结，以熔化和去除烧蚀构件。

4. 发明申请

US20110284792A1 STEEL-BASE SINTERING ALLOY HAVING HIGH WEAR-RESISTANCE FOR VALVE SEAT OF ENGINE AND MANUFACTURING METHOD THEREOF, AND VALVE SEAT OF ENGINE 审中-公开
标题翻译：具有发动机阀座高耐磨性的钢基烧结合金及其制造方法及发动机阀座
公开(公告)号：US20110284792A1
公开(公告)日：2011-11-24
申请号：US12906471
申请日：2010-10-18
申请人： Jong Myung Kim , Ki Bum Kim , Dong Jin Kang , Hyung Oh Ban , Hong Kil Baek , Won-Seog Koo , Jong-Kwan Park , Sung-Tae Choi
发明人： Jong Myung Kim , Ki Bum Kim , Dong Jin Kang , Hyung Oh Ban , Hong Kil Baek , Won-Seog Koo , Jong-Kwan Park , Sung-Tae Choi
IPC分类号： F16K51/00 , B22F3/12 , B22F3/26 , B22F1/00
CPC分类号： F16K25/005 , B22F5/008 , B22F2999/00 , C22C33/0285 , B22F3/10 , B22F2201/02
摘要： The present invention features a steel-base sintering alloy having a high wear-resistance for a valve seat of an engine. In preferred embodiments, the steel-base sintering alloy may include a chief element of Ferrum (Fe); and a powder-alloy which are composed of Carbon (C) of 0.6˜1.2 wt %, Nickel (Ni) of 1.0˜3.0 wt %, Cobalt (Co) of 15.0˜25.0 wt %, Chrome (Cr) of 3.0˜9.0 wt %, Molybdenum (Mo) of 8.0˜15.0 wt %, Tungsten (W) of 1.0˜4.0 wt %, Manganese (Mn) of 0.5˜2.0 wt %, and Calcium (Ca) of 0.1˜0.5 wt %.
摘要翻译：本发明的特征在于具有用于发动机的阀座的高耐磨性的钢基烧结合金。在优选实施例中，钢基烧结合金可以包括铁（Fe）的主要元素; 和由0.6〜1.2重量％的碳（C），1.0〜3.0重量％的镍（Ni），15.0〜25.0重量％的钴（Co），3.0〜9.0的铬（Co）组成的粉末合金）重量％，钼（Mo）为8.0〜15.0重量％，钨（W）为1.0〜4.0重量％，锰（Mn）为0.5〜2.0重量％，钙（Ca）为0.1〜0.5重量％。

5. 发明申请

US20110045741A1 Auto-Stopping Abrasive Composition for Polishing High Step Height Oxide Layer 审中-公开
标题翻译：自动停止用于抛光高阶高氧化物层的磨料组合物
公开(公告)号：US20110045741A1
公开(公告)日：2011-02-24
申请号：US11912849
申请日：2006-04-28
申请人： Jung-Ryul Ahn , Jong-Kwan Park , Seok-Ju Kim , Eun-Il Jeong , Deok-Su Han , Hyu-Bum Park , Kui-Jong Baek , Tae-Kyeong Lee
发明人： Jung-Ryul Ahn , Jong-Kwan Park , Seok-Ju Kim , Eun-Il Jeong , Deok-Su Han , Hyu-Bum Park , Kui-Jong Baek , Tae-Kyeong Lee
IPC分类号： C09K13/06 , B24B1/00 , C09K13/00
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/31053
摘要： Disclosed is a chemical-mechanical polishing composition used in a process for chemical-mechanical polishing of silicon oxide layer having severe unevenness with large step-height. The composition includes abrasive particles of metal oxide; and at least one compound(s) selected from the group consisting of amino alcohols, hydroxycarboxylic acid having at least 3 of the total number of carboxylic acid group(s) and hydroxyl group(s) or their salts, or a mixture thereof. A polymeric organic acid, a preservative, a lubricant and a surfactant may be further contained. The composition shortens the vapor-deposition time of a layer to be polished, saves the raw material to be vapor-deposited, shortens the chemical-mechanical polishing time, and saves the slurry employed.
摘要翻译：公开了一种化学机械抛光组合物，其用于具有大步长严重不均匀性的氧化硅层的化学机械抛光方法。该组合物包括金属氧化物的磨料颗粒; 和至少一种选自氨基醇，具有至少3个羧基基团和羟基或其盐的羟基羧酸或其混合物的化合物。还可以含有聚合有机酸，防腐剂，润滑剂和表面活性剂。该组合物缩短了待抛光层的气相沉积时间，节省了原料蒸汽沉积，缩短了化学机械抛光时间，节省了所用浆料。

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