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1. 发明申请

US20100117058A1 MULTI-STRUCTURE NANOWIRE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：多结构纳米及其制造方法
公开(公告)号：US20100117058A1
公开(公告)日：2010-05-13
申请号：US12532645
申请日：2008-02-26
申请人： Jong-Hyurk Park , Sung-Lyul Maeng , Rae-Man Park , Andrea C. Ferrari , Andrea Fasoli , Alan Colli
发明人： Jong-Hyurk Park , Sung-Lyul Maeng , Rae-Man Park , Andrea C. Ferrari , Andrea Fasoli , Alan Colli
IPC分类号： H01L29/12 , H01L21/20
CPC分类号： H01L29/267 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/068
摘要： Provided is a multi-structure nanowire in which silicon nanowires are formed at both ends of a compound semi-conductor nanorod, and a method of manufacturing the multi-structure nanowire. The method includes providing a compound semiconductor nanorod; forming metal catalyst tips on both ends of the compound semiconductor nanorod; and growing silicon nanowires on both ends of the compound semiconductor nanorod where the metal catalyst tips are formed.
摘要翻译：提供一种其中在复合半导体纳米棒的两端形成硅纳米线的多结构纳米线，以及制造多结构纳米线的方法。该方法包括提供化合物半导体纳米棒; 在化合物半导体纳米棒的两端形成金属催化剂尖端; 以及在形成金属催化剂尖端的化合物半导体纳米棒的两端上生长硅纳米线。

2. 发明申请

US20070275498A1 Enhancing performance in ink-jet printed organic semiconductors 审中-公开
标题翻译：提高喷墨印刷有机半导体的性能
公开(公告)号：US20070275498A1
公开(公告)日：2007-11-29
申请号：US11441498
申请日：2006-05-26
申请人： Paul Beecher , Alan Colli , Oleksly Rozhin , Peyman Servati , Andrea Fasoli , Andrea C. Ferrari , Andrew Flewitt , John Robertson , William I. Milne
发明人： Paul Beecher , Alan Colli , Oleksly Rozhin , Peyman Servati , Andrea Fasoli , Andrea C. Ferrari , Andrew Flewitt , John Robertson , William I. Milne
IPC分类号： H01L51/40
CPC分类号： H01L51/0005 , B82Y20/00 , B82Y30/00 , H01L51/0545 , H01L51/5052 , H01L2251/5369 , Y02E10/549
摘要： Systems and methods are provided to improve the performance of electronic and optoelectronic devices made using organic semiconductor processing technology. An ink-jet device dispenses an organic composite mixture onto a substrate. The mixture includes a semiconducting polymer and nanomaterials dispersed into an organic solvent. The type of solvent used preferably achieves effective dispersion of the polymer and nanomaterials in the solvent to minimize the occurrence of clogging of the ink-jet nozzles. The range of nanomaterials include, but are not limited to, organic and inorganic, single or multi-walled nanotubes, nanowires, nanodots, quantum dots, nanorods, nanocrystals, nanotetrapods, nanotripods, nanobipods, nanoparticles, nanosaws, nanosprings, nanoribbons, any branched nanostructure, and any mixture of these nanoshaped materials. The nanostructures can be aligned on the substrate to improve the carrier mobility in the organic semiconductors.
摘要翻译：提供了系统和方法，以提高使用有机半导体处理技术制造的电子和光电器件的性能。喷墨装置将有机复合混合物分配到基底上。该混合物包括半导体聚合物和分散在有机溶剂中的纳米材料。使用的溶剂类型优选实现聚合物和纳米材料在溶剂中的有效分散，以最小化喷墨嘴堵塞的发生。纳米材料的范围包括但不限于有机和无机，单壁或多壁纳米管，纳米线，纳米点，量子点，纳米棒，纳米晶体，纳米四极杆，纳米二聚体，纳摩比，纳米线，纳米线，纳米线，纳米带，纳米结构和这些纳米材料的任何混合物。可以在衬底上对准纳米结构以改善有机半导体中的载流子迁移率。

3. 发明授权

US09202945B2 Graphene-based MIM diode and associated methods 有权
标题翻译：基于石墨烯的MIM二极管及相关方法
公开(公告)号：US09202945B2
公开(公告)日：2015-12-01
申请号：US13336589
申请日：2011-12-23
申请人： Alan Colli , Shakil A. Awan , Antonio Lombardo , Tim J. Echtermeyer , Tero S. Kulmala , Andrea C. Ferrari
发明人： Alan Colli , Shakil A. Awan , Antonio Lombardo , Tim J. Echtermeyer , Tero S. Kulmala , Andrea C. Ferrari
IPC分类号： H01L31/0248 , H01L31/0256 , H01L31/0224 , H01L31/108 , H01L45/00 , H01L31/18
CPC分类号： H01L31/022408 , H01L31/1085 , H01L45/00 , H01L2031/0344
摘要： An apparatus including first and second layers of electrically conductive material separated by a layer of electrically insulating material, wherein one or both layers of electrically conductive material include graphene, and wherein the apparatus is configured such that electrons are able to tunnel from the first layer of electrically conductive material through the layer of electrically insulating material to the second layer of electrically conductive material.
摘要翻译：一种包括由电绝缘材料层隔开的第一和第二导电材料层的装置，其中一层或两层导电材料包括石墨烯，并且其中该装置被配置为使得电子能够从第一层导电材料通过电绝缘材料层到第二层导电材料。

4. 发明授权

US09153764B2 Apparatus for transducing a surface acoustic wave 有权
标题翻译：用于传导表面声波的装置
公开(公告)号：US09153764B2
公开(公告)日：2015-10-06
申请号：US13042894
申请日：2011-03-08
申请人： Alan Colli
发明人： Alan Colli
IPC分类号： H01L41/047 , H01L41/113
CPC分类号： H01L41/0478 , H01L41/113
摘要： An apparatus including a piezoelectric substrate configured to propagate a surface acoustic wave; and a transducer, coupled to the piezoelectric substrate, including at least one graphene electrode configured to transduce a propagating surface acoustic wave to an electrical signal.
摘要翻译：一种包括构造成传播表面声波的压电基片的装置; 以及耦合到所述压电基板的换能器，所述换能器包括被配置为将传播的声表面波转换成电信号的至少一个石墨烯电极。

5. 发明申请

US20100330409A1 Method and apparatus 有权
标题翻译：方法和装置
公开(公告)号：US20100330409A1
公开(公告)日：2010-12-30
申请号：US12459339
申请日：2009-06-30
申请人： Pritesh Hiralal , Alan Colli
发明人： Pritesh Hiralal , Alan Colli
IPC分类号： H01M10/02 , C23F1/00
CPC分类号： C30B29/06 , C30B29/60 , C30B29/62 , H01M4/134 , H01M4/1395 , H01M10/052
摘要： A method including: a) depositing a masking material over a substrate comprising silicon; b) removing the masking material using a first process that removes the masking material in preference to silicon; c) removing silicon using a second process that removes silicon in preference to the masking material; d) continuously repeating the sequence of steps a), b) and c) to control the creation of nanowires; and e) stopping repetition of the sequence of steps a), b) and c).
摘要翻译：一种方法，包括：a）在包含硅的衬底上沉积掩模材料; b）使用优先于硅去除掩蔽材料的第一工艺去除掩模材料; c）使用除掩蔽材料以外的硅去除硅的第二工艺去除硅; d）连续地重复步骤a），b）和c）的顺序以控制纳米线的产生; 和e）停止重复步骤a），b）和c）的顺序。

6. 发明授权

US09035281B2 Graphene device and method of fabricating a graphene device 有权
标题翻译：石墨烯装置和制造石墨烯装置的方法
公开(公告)号：US09035281B2
公开(公告)日：2015-05-19
申请号：US12495098
申请日：2009-06-30
申请人： Asta Maria Kärkkäinen , Samiul Md Haque , Alan Colli , Pirjo Marjaana Pasanen , Leo Mikko Johannes Kärkkäinen , Mikko Aleksi Uusitalo , Reijo Kalervo Lehtiniemi
发明人： Asta Maria Kärkkäinen , Samiul Md Haque , Alan Colli , Pirjo Marjaana Pasanen , Leo Mikko Johannes Kärkkäinen , Mikko Aleksi Uusitalo , Reijo Kalervo Lehtiniemi
IPC分类号： H01L29/06 , H01L29/16 , H01L21/02 , H01L29/778 , H01L29/786 , B82Y10/00 , B82Y40/00 , H01L29/66 , H01L29/775
CPC分类号： H01L29/1606 , B82Y10/00 , B82Y40/00 , H01L21/02527 , H01L21/02612 , H01L21/02664 , H01L21/0332 , H01L21/042 , H01L29/0673 , H01L29/45 , H01L29/66022 , H01L29/66439 , H01L29/775 , H01L29/7781 , H01L29/78684 , Y10T428/24058 , Y10T428/30
摘要： In accordance with an example embodiment of the present invention, a device comprising one or more porous graphene layers, the or each graphene porous layer comprising a multiplicity of pores. The device may form at least part of a flexible and/or stretchable, and or transparent electronic device.
摘要翻译：根据本发明的示例性实施例，包括一个或多个多孔石墨烯层的装置，所述或每个石墨烯多孔层包含多个孔。该装置可以形成柔性和/或可拉伸和/或透明电子装置的至少一部分。

7. 发明授权

US08785996B2 Nanowire FET 有权
标题翻译：纳米线FET
公开(公告)号：US08785996B2
公开(公告)日：2014-07-22
申请号：US12856129
申请日：2010-08-13
申请人： Alan Colli , Richard White
发明人： Alan Colli , Richard White
IPC分类号： H01L27/108 , G06N3/063 , G06N3/067 , G06N3/04 , H01L31/113
CPC分类号： H01L31/113 , G06N3/049 , G06N3/063 , G06N3/067
摘要： An apparatus including a first electrode; a second electrode; a nano-scale channel between the first electrode and the second electrode wherein the nano-scale channel has a first state in which an electrical impedance of the nano-scale channel is relatively high and a second state in which the electrical impedance of the nano-scale channel is relatively low; dielectric adjacent the nano-scale channel; and a gate electrode adjacent the dielectric configured to control a threshold number of quanta of stimulus, wherein the nano-scale channel is configured to switch between the first state and the second state in response to an application of a quantum of stimulus above the threshold number of quanta of stimulus.
摘要翻译：一种装置，包括：第一电极; 第二电极; 在第一电极和第二电极之间的纳米尺度通道，其中纳米尺度通道具有其中纳米级通道的电阻抗相对较高的第一状态和其中纳米级通道的电阻抗的第二状态，规模通道相对较低; 电介质邻近纳米级通道; 以及邻近所述电介质的栅电极，被配置为控制阈值数量的刺激量，其中所述纳米尺度通道被配置为响应于刺激量的应用高于阈值数量而在第一状态和第二状态之间切换的刺激量子。

8. 发明授权

US08513883B2 Electroluminescent device having piezoelectric component 有权
标题翻译：具有压电元件的电致发光器件
公开(公告)号：US08513883B2
公开(公告)日：2013-08-20
申请号：US12347209
申请日：2008-12-31
申请人： Zoran Radivojevic , Richard White , Alan Colli , Di Wei , Piers Andrew
发明人： Zoran Radivojevic , Richard White , Alan Colli , Di Wei , Piers Andrew
IPC分类号： H05B33/02
CPC分类号： F21K2/04
摘要： An example embodiment there is provided an electroluminescent device comprising: an electroluminescent component, a first piezoelectric component, an alpha electrode and a first beta electrode, the electroluminescent component being located between the alpha electrode and the first piezoelectric component, the first beta electrode being in electrical contact with the alpha electrode and in electrical contact with the first piezoelectric component, the alpha electrode, first beta electrode, first piezoelectric component, and electroluminescent component being configured to generate a potential difference across the electroluminescent component responsive to a mechanical stress applied to the first piezoelectric component.
摘要翻译：提供了一种电致发光器件，其包括：电致发光元件，第一压电元件，α电极和第一β电极，所述电致发光元件位于所述α电极和所述第一压电元件之间，所述第一β电极处于与α电极电接触并且与第一压电部件电接触，α电极，第一β电极，第一压电部件和电致发光部件被配置为响应于施加到该电极的机械应力而产生电致发光部件上的电位差第一压电元件。

9. 发明申请

US20100025658A1 Lithographic process using a nanowire mask, and nanoscale devices fabricated using the process 有权
标题翻译：使用纳米线掩模的平版印刷工艺和使用该工艺制造的纳米级器件
公开(公告)号：US20100025658A1
公开(公告)日：2010-02-04
申请号：US12221068
申请日：2008-07-29
申请人： Alan Colli
发明人： Alan Colli
IPC分类号： H01L29/06 , H01L21/336
CPC分类号： B82Y10/00 , B82Y40/00 , H01L21/3083 , H01L27/1203 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L29/42376 , H01L29/66439 , H01L29/775 , H01L29/78696
摘要： The disclosure pertains to a method for making a nanoscale filed effect transistor structure on a semiconductor substrate. The method comprises disposing a mask on a semiconductor upper layer of a multi-layer substrate, and removing areas of the upper layer not covered by the mask in a nanowire lithography process. The mask includes two conductive terminals separated by a distance, and a nanowire in contact with the conductive terminals across the distance. The nanowire lithography may be carried out using a deep-reactive-ion-etching, which results in an integration of the nanowire mask and the underlying semiconductor layer to form a nanoscale semiconductor channel for the field effect transistor.
摘要翻译：本公开涉及在半导体衬底上制造纳米级效应晶体管结构的方法。该方法包括在多层基板的半导体上层上设置掩模，并且在纳米线光刻工艺中去除未被掩模覆盖的上层的区域。该掩模包括两个分开一段距离的导电端子，并且跨越距离与导电端子接触的纳米线。纳米线光刻可以使用深反应离子蚀刻进行，这导致纳米线掩模和下面的半导体层的集成，以形成用于场效应晶体管的纳米级半导体通道。

10. 发明授权

US08022393B2 Lithographic process using a nanowire mask, and nanoscale devices fabricated using the process 有权
标题翻译：使用纳米线掩模的平版印刷工艺和使用该工艺制造的纳米级器件
公开(公告)号：US08022393B2
公开(公告)日：2011-09-20
申请号：US12221068
申请日：2008-07-29
申请人： Alan Colli
发明人： Alan Colli
IPC分类号： H01L29/06
CPC分类号： B82Y10/00 , B82Y40/00 , H01L21/3083 , H01L27/1203 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L29/42376 , H01L29/66439 , H01L29/775 , H01L29/78696
摘要： The disclosure pertains to a method for making a nanoscale filed effect transistor structure on a semiconductor substrate. The method comprises disposing a mask on a semiconductor upper layer of a multi-layer substrate, and removing areas of the upper layer not covered by the mask in a nanowire lithography process. The mask includes two conductive terminals separated by a distance, and a nanowire in contact with the conductive terminals across the distance. The nanowire lithography may be carried out using a deep-reactive-ion-etching, which results in an integration of the nanowire mask and the underlying semiconductor layer to form a nanoscale semiconductor channel for the field effect transistor.
摘要翻译：本公开涉及在半导体衬底上制造纳米级效应晶体管结构的方法。该方法包括在多层基板的半导体上层上设置掩模，并且在纳米线光刻工艺中去除未被掩模覆盖的上层的区域。该掩模包括两个分开一段距离的导电端子，并且跨越距离与导电端子接触的纳米线。纳米线光刻可以使用深反应离子蚀刻进行，这导致纳米线掩模和下面的半导体层的集成，以形成用于场效应晶体管的纳米级半导体通道。

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