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1. 发明授权

US07906206B2 Organic insulator composition comprising high dielectric constant insulator dispersed in hyperbranched polymer and organic thin film transistor using the same 有权
标题翻译：包含分散在超支化聚合物中的高介电常数绝缘体和使用其的有机薄膜晶体管的有机绝缘体组合物
公开(公告)号：US07906206B2
公开(公告)日：2011-03-15
申请号：US11204102
申请日：2005-08-16
申请人： Jong Jin Park , Hyun Jung Park , Bon Won Koo , Sang Yoon Lee , Lyong Sun Pu , Kakimoto Masaaki
发明人： Jong Jin Park , Hyun Jung Park , Bon Won Koo , Sang Yoon Lee , Lyong Sun Pu , Kakimoto Masaaki
IPC分类号： B32B5/16 , C08K5/00 , H01L51/30
CPC分类号： H01L21/02118 , H01L21/0217 , H01L21/02175 , H01L21/02282 , H01L21/31691 , H01L51/0537 , Y10T428/25
摘要： An organic insulator composition comprising a high dielectric constant insulator dispersed in a hyperbranched polymer and an organic thin film transistor using the insulator composition. More specifically, the organic thin film transistor comprises a substrate, a gate electrode, a gate insulating layer, a source electrode, a drain electrode and an organic semiconductor layer wherein the gate insulating layer is made of the organic insulator composition. The use of the insulator composition in the formation of a gate insulating layer allows the gate insulating layer to be uniformly formed by spin coating at room temperature, as well as enables fabrication of an organic thin film transistor simultaneously satisfying the requirements of high charge carrier mobility and low threshold voltage.
摘要翻译：一种有机绝缘体组合物，其包含分散在超支化聚合物中的高介电常数绝缘体和使用该绝缘体组合物的有机薄膜晶体管。更具体地，有机薄膜晶体管包括基板，栅电极，栅极绝缘层，源电极，漏电极和有机半导体层，其中栅绝缘层由有机绝缘体组合物制成。在形成栅极绝缘层中使用绝缘体组合物允许在室温下通过旋涂均匀地形成栅极绝缘层，并且能够制造同时满足高电荷载流子迁移率要求的有机薄膜晶体管和低阈值电压。

2. 发明授权

US07005674B2 Organic thin film transistor comprising multi-layered gate insulator 有权
标题翻译：包括多层栅极绝缘体的有机薄膜晶体管
公开(公告)号：US07005674B2
公开(公告)日：2006-02-28
申请号：US10769816
申请日：2004-02-03
申请人： Sang Yoon Lee , Jong Jin Park , Yi Yeol Lyu , Young Hun Byun , Bon Won Koo , In Nam Kang
发明人： Sang Yoon Lee , Jong Jin Park , Yi Yeol Lyu , Young Hun Byun , Bon Won Koo , In Nam Kang
IPC分类号： H01L35/24 , H01L29/76
CPC分类号： H01L51/0545 , H01L21/31604 , H01L21/31691 , H01L51/0052 , H01L51/0529 , H01L51/0537
摘要： An organic thin film transistor (OTFT) comprising a gate electrode, a gate insulating film, an organic active layer and a source/drain electrode, or a gate electrode, a gate insulating film, a source/drain electrode and an organic active layer, sequentially formed on a substrate, wherein the gate insulating film is a multi-layered insulator comprising a first layer of a high dielectric material and a second layer of an insulating organic polymer compatible with the organic active layer, the second layer being positioned directly under the organic active layer. The OTFT of the present invention shows low threshold and driving voltages, high charge mobility, and high Ion/Ioff, and it can be prepared by a wet process.
摘要翻译：一种有机薄膜晶体管（OTFT），包括栅极，栅极绝缘膜，有机活性层和源极/漏极，或栅电极，栅极绝缘膜，源/漏电极和有机活性层，依次形成在基板上，其中栅极绝缘膜是包括高介电材料的第一层和与有机活性层相容的绝缘有机聚合物的第二层的多层绝缘体，第二层位于有机活性层。本发明的OTFT显示低阈值和驱动电压，高电荷迁移率和高/低电流，并且可以通过湿法制备。

3. 发明授权

US08017245B2 Composition for preparing organic insulator 有权
标题翻译：有机绝缘子的组成
公开(公告)号：US08017245B2
公开(公告)日：2011-09-13
申请号：US11128309
申请日：2005-05-13
申请人： Sang Yoon Lee , Jong Jin Park , Yi Yeol Lyu , Bon Won Koo , Young Hun Byun , Eun Mi Seo
发明人： Sang Yoon Lee , Jong Jin Park , Yi Yeol Lyu , Bon Won Koo , Young Hun Byun , Eun Mi Seo
IPC分类号： H01L23/29
CPC分类号： H01L21/02126 , C08G77/04 , C08K5/057 , C08K5/56 , C08L83/04 , C09D183/06 , H01B3/18 , H01L21/02172 , H01L21/02186 , H01L21/02282 , H01L21/3122 , H01L51/0052 , H01L51/0537 , Y10T428/31504 , Y10T428/31663 , C08L2666/02
摘要： A composition for preparing an organic insulator, the composition comprising (i) at least one organic-inorganic hybrid material; (ii) at least one organometallic compound and/or organic polymer; and (iii) at least one solvent for dissolving the above two components, so that an organic insulator using the same has a low threshold voltage and driving voltage, and high charge carrier mobility and Ion/Ioff ratio, thereby enhancing insulator characteristics. Further, the preparation of organic insulating film can be carried out by wet process, so that simplification of the process and cut of cost are achieved.
摘要翻译：一种用于制备有机绝缘体的组合物，所述组合物包含（i）至少一种有机 - 无机混合材料; （ii）至少一种有机金属化合物和/或有机聚合物; 和（iii）用于溶解上述两种组分的至少一种溶剂，使得使用该溶剂的有机绝缘体具有低阈值电压和驱动电压，以及高的载流子迁移率和离子/离子比，从而提高绝缘体特性。此外，有机绝缘膜的制备可以通过湿法进行，从而实现了工艺的简化和成本的削减。

4. 发明授权

US07205096B2 Method for forming metal pattern by using metal nanocrystals 有权
标题翻译：使用金属纳米晶体形成金属图案的方法
公开(公告)号：US07205096B2
公开(公告)日：2007-04-17
申请号：US11117431
申请日：2005-04-29
申请人： Jong Jin Park , Sang Yeol Kim , Tae Woo Lee , Lyong Sun Pu
发明人： Jong Jin Park , Sang Yeol Kim , Tae Woo Lee , Lyong Sun Pu
IPC分类号： C23C18/30
CPC分类号： G03F7/405 , G03F7/0392 , Y10T428/31678
摘要： Disclosed herein is a method for forming a metal pattern by using metal nanocrystals. The method comprises the steps of: (i) coating a photosensitive compound having a substituent, which is converted into a free carboxyl group by light exposure, on a substrate to form a photosensitive film; (ii) selectively exposing the photosensitive film to light in the presence of a photoacid generator to form a latent pattern for crystal growth having a free carboxyl group; and (iii) treating the latent pattern for crystal growth with a nanometallic solution in which metal nanocrystals can be formed to grow the metal nanocrystals on the latent pattern. According to the method, a metal wiring pattern can be formed in a cost-effective and relatively simple manner. Further, the metal pattern formed by the method can be useful in the manufacture of an electromagnetic interference filter for flat panel display devices or an electrode, and can thus be applied to devices, e.g., organic light-emitting devices (OLED) and organic thin-film transistors (OTFT).
摘要翻译：本文公开了通过使用金属纳米晶体形成金属图案的方法。该方法包括以下步骤：（i）通过曝光将具有取代基的感光性化合物转化成游离羧基，形成感光膜; （ii）在光致酸产生剂的存在下将感光膜选择性曝光以形成具有游离羧基的晶体生长的潜在图案; 和（iii）用可以形成金属纳米晶体的纳米金属溶液处理潜在图案以进行晶体生长，以在潜在图案上生长金属纳米晶体。根据该方法，可以以成本有效且相对简单的方式形成金属布线图案。此外，通过该方法形成的金属图案可用于制造用于平板显示装置或电极的电磁干扰滤光器，并且因此可以应用于诸如有机发光器件（OLED）和有机薄膜 - 薄膜晶体管（OTFT）。

5. 发明授权

US08617709B2 Functionalized metal nanoparticle, buffer layer including the same and electronic device including the buffer layer 有权
标题翻译：官能化金属纳米颗粒，包括其的缓冲层和包括缓冲层的电子器件
公开(公告)号：US08617709B2
公开(公告)日：2013-12-31
申请号：US12078778
申请日：2008-04-04
申请人： Hyun Sik Moon , Jong Jin Park , Bon Won Koo , Jung Seok Hahn , Do Hwan Kim
发明人： Hyun Sik Moon , Jong Jin Park , Bon Won Koo , Jung Seok Hahn , Do Hwan Kim
IPC分类号： B32B5/16
CPC分类号： C07D271/113 , B82Y20/00 , C07B2200/11 , C07F7/1804 , H01L51/5088 , H01L51/5092 , H01L2251/5369 , Y10T428/25 , Y10T428/256 , Y10T428/2982 , Y10T428/2991
摘要： Disclosed herein is a functionalized metal nanoparticle, a buffer layer including the functionalized metal nanoparticle, and an electronic device including the buffer layer. The buffer layer including the functionalized metal nanoparticle according to example embodiments may improve the injection of electrons or holes and the charge mobility between layers in the electronic device, may form ohmic contacts, and may improve the selectivity between electrodes and the buffer layer at the time of forming the buffer layer on the electrodes, thereby improving the efficiency of the electronic device.
摘要翻译：本文公开了官能化金属纳米颗粒，包含官能化金属纳米颗粒的缓冲层和包括缓冲层的电子器件。包括根据示例性实施方案的官能化金属纳米颗粒的缓冲层可以改善电子或空穴的注入，并且电子器件中的层之间的电荷迁移率可以形成欧姆接触，并且可以提高电极和缓冲层之间的选择性在电极上形成缓冲层，从而提高电子器件的效率。

6. 发明申请

US20080299382A1 Functionalized metal nanoparticle, buffer layer including the same and electronic device including the buffer layer 有权
标题翻译：官能化金属纳米颗粒，包括其的缓冲层和包括缓冲层的电子器件
公开(公告)号：US20080299382A1
公开(公告)日：2008-12-04
申请号：US12078778
申请日：2008-04-04
申请人： Hyun Sik Moon , Jong Jin Park , Bon Won Koo , Jung Seok Hahn , Do Hwan Kim
发明人： Hyun Sik Moon , Jong Jin Park , Bon Won Koo , Jung Seok Hahn , Do Hwan Kim
IPC分类号： B32B5/16
CPC分类号： C07D271/113 , B82Y20/00 , C07B2200/11 , C07F7/1804 , H01L51/5088 , H01L51/5092 , H01L2251/5369 , Y10T428/25 , Y10T428/256 , Y10T428/2982 , Y10T428/2991
摘要： Disclosed herein is a functionalized metal nanoparticle, a buffer layer including the functionalized metal nanoparticle, and an electronic device including the buffer layer. The buffer layer including the functionalized metal nanoparticle according to example embodiments may improve the injection of electrons or holes and the charge mobility between layers in the electronic device, may form ohmic contacts, and may improve the selectivity between electrodes and the buffer layer at the time of forming the buffer layer on the electrodes, thereby improving the efficiency of the electronic device.
摘要翻译：本文公开了官能化金属纳米颗粒，包含官能化金属纳米颗粒的缓冲层和包括缓冲层的电子器件。包括根据示例性实施方案的官能化金属纳米颗粒的缓冲层可以改善电子或空穴的注入，并且电子器件中的层之间的电荷迁移率可以形成欧姆接触，并且可以提高电极和缓冲层之间的选择性在电极上形成缓冲层，从而提高电子器件的效率。

7. 发明授权

US06960425B2 Method for laminating and patterning carbon nanotubes using chemical self-assembly process 有权
标题翻译：使用化学自组装工艺层压和图案化碳纳米管的方法
公开(公告)号：US06960425B2
公开(公告)日：2005-11-01
申请号：US10693647
申请日：2003-10-27
申请人： Myung Sup Jung , Jong Jin Park , Sung Ouk Jung , Seung Joo Seo , Bon Won Koo
发明人： Myung Sup Jung , Jong Jin Park , Sung Ouk Jung , Seung Joo Seo , Bon Won Koo
IPC分类号： B82B3/00 , B82Y30/00 , B82Y40/00 , C01B31/02 , G03F1/00 , G03F7/039 , G03F7/16 , G03F7/40 , H01B13/00 , G03F7/30
CPC分类号： B82Y30/00 , B82Y10/00 , G03F7/0392 , G03F7/165 , G03F7/168 , G03F7/40 , Y10S977/842
摘要： A method for forming a pattern of carbon nanotubes includes forming a pattern on a surface-treated substrate using a photolithographic process, and laminating carbon nanotubes thereon using a chemical self-assembly process so as to form the carbon nanotubes in a monolayer or multilayer structure. A monolayer or multilayer carbon nanotube pattern may be easily formed on the substrate, e.g., glass, a silicon wafer and a plastic. Accordingly, the method can be applied to form patterned carbon nanotube layers having a high conductivity, and thus will be usefully utilized in the manufacturing processes of energy storages, for example, solar cells and batteries, flat panel displays, transistors, chemical and biological sensors, semiconductor devices and the like.
摘要翻译：形成碳纳米管图案的方法包括使用光刻工艺在表面处理的基板上形成图案，并使用化学自组装工艺在其上层压碳纳米管，以便以单层或多层结构形成碳纳米管。单层或多层碳纳米管图案可以容易地形成在基底上，例如玻璃，硅晶片和塑料。因此，该方法可以应用于形成具有高导电性的图案化碳纳米管层，因此将有用地用于能量存储器的制造过程中，例如太阳能电池和电池，平板显示器，晶体管，化学和生物传感器，半导体器件等。

8. 发明申请

US20100159219A1 Negative pattern of carbon nanotubes and carbon nanotube composite comprising surface-modified carbon nanotubes 有权
标题翻译：包含表面改性碳纳米管的碳纳米管和碳纳米管复合材料的负图案
公开(公告)号：US20100159219A1
公开(公告)日：2010-06-24
申请号：US12588287
申请日：2009-10-09
申请人： Jong Jin Park , Jung Han Shin , Sang Yoon Lee
发明人： Jong Jin Park , Jung Han Shin , Sang Yoon Lee
IPC分类号： B32B3/10 , C08K5/1515 , C08K5/1539 , C08K5/07 , C08K5/151 , C07D307/83 , C07D307/60 , C07D493/00 , C07D303/12 , C07C49/303
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/168 , C01B32/17 , C08K3/041 , C08K9/04 , C09D7/70 , C09D109/06 , C09D129/04 , G03F7/0382 , Y10S977/746 , Y10S977/753 , Y10S977/842 , Y10T428/24893 , Y10T428/24994
摘要： Disclosed herein are methods of making a negative pattern of carbon nanotubes or a polymerized carbon nanotube composite having an interpenetrating polymer network (IPN) by modifying the surfaces of the carbon nanotubes with polymerizable functional groups such as oxirane and anhydride groups and subjecting the surface-modified carbon nanotubes either to a photolithography process or to a heatcuring process. By virtue of the present invention, desired patterns of carbon nanotubes can be easily made on the surfaces of various substrates, and polymerized carbon nanotube composites improved in hardening properties can be made without additional polymers.
摘要翻译：本文公开了通过用诸如环氧乙烷和酸酐基团的可聚合官能团改性碳纳米管的表面来制备碳纳米管的负型图案或具有互穿聚合物网络（IPN）的聚合碳纳米管复合材料的方法，并对表面改性碳纳米管到光刻工艺或热固化工艺。根据本发明，可以容易地在各种基板的表面上形成期望的碳纳米管图案，并且可以在没有附加的聚合物的情况下进行提高硬化性能的聚合碳纳米管复合材料。

9. 发明授权

US08383317B2 Method of making carbon nanotube patterned film or carbon nanotube composite using carbon nanotubes surface-modified with polymerizable moieties 有权
标题翻译：使用可聚合部分表面改性的碳纳米管制造碳纳米管图案化薄膜或碳纳米管复合材料的方法
公开(公告)号：US08383317B2
公开(公告)日：2013-02-26
申请号：US11798023
申请日：2007-05-09
申请人： Jong Jin Park , Jung Han Shin , Sang Yoon Lee
发明人： Jong Jin Park , Jung Han Shin , Sang Yoon Lee
IPC分类号： C07D303/12
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/168 , C01B32/17 , C08K3/041 , C08K9/04 , C09D7/70 , C09D109/06 , C09D129/04 , G03F7/0382 , Y10S977/746 , Y10S977/753 , Y10S977/842 , Y10T428/24893 , Y10T428/24994
摘要： Disclosed herein are methods of making a negative pattern of carbon nanotubes or a polymerized carbon nanotube composite having an interpenetrating polymer network (IPN) by modifying the surfaces of the carbon nanotubes with polymerizable functional groups such as oxirane and anhydride groups and subjecting the surface-modified carbon nanotubes either to a photolithography process or to a heatcuring process. By virtue of the present invention, desired patterns of carbon nanotubes can be easily made on the surfaces of various substrates, and polymerized carbon nanotube composites improved in hardening properties can be made without additional polymers.
摘要翻译：本文公开了通过用诸如环氧乙烷和酸酐基团的可聚合官能团改性碳纳米管的表面来制备碳纳米管的负型图案或具有互穿聚合物网络（IPN）的聚合碳纳米管复合材料的方法，并对表面改性碳纳米管到光刻工艺或热固化工艺。根据本发明，可以容易地在各种基板的表面上形成期望的碳纳米管图案，并且可以在没有附加的聚合物的情况下进行提高硬化性能的聚合碳纳米管复合材料。

10. 发明申请

US20090121216A9 Organic thin film transistor having surface-modified carbon nanotubes 有权
标题翻译：具有表面改性碳纳米管的有机薄膜晶体管
公开(公告)号：US20090121216A9
公开(公告)日：2009-05-14
申请号：US11898977
申请日：2007-09-18
申请人： Kook Min Han , Kyu Yeol In , Jong Jin Park , Hyun Sik Moon , Sang Yoon Lee
发明人： Kook Min Han , Kyu Yeol In , Jong Jin Park , Hyun Sik Moon , Sang Yoon Lee
IPC分类号： H01L51/10
CPC分类号： H01L51/0049 , B82Y10/00 , H01L51/0036 , H01L51/0043 , H01L51/0541 , H01L51/0545 , H01L51/0566 , Y10S977/745
摘要： An organic thin film transistor may comprise an organic semiconductor layer having surface-modified carbon nanotubes and an electrically-conductive polymer. The surfaces of the carbon nanotubes may be modified with curable functional groups, comprising oxirane groups and anhydride groups. A room-temperature solution process may be used to provide a relatively uniform and relatively highly-adhesive organic semiconductor layer in a simple and economical manner. Additionally, the organic thin film transistor having the organic semiconductor layer may have relatively high charge carrier mobility and relatively low threshold voltage.
摘要翻译：有机薄膜晶体管可以包括具有表面改性的碳纳米管和导电聚合物的有机半导体层。碳纳米管的表面可以用可固化官能团改性，包括环氧乙烷基团和酸酐基团。可以使用室温溶液法以简单和经济的方式提供相对均匀且相对高度粘合的有机半导体层。另外，具有有机半导体层的有机薄膜晶体管可以具有相对高的载流子迁移率和相对低的阈值电压。

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