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1. 发明授权

US07460579B2 Multi-wavelength semiconductor laser device 失效
标题翻译：多波长半导体激光器件
公开(公告)号：US07460579B2
公开(公告)日：2008-12-02
申请号：US11159350
申请日：2005-06-23
申请人： Jong Ik Park , Yu Seung Kim , Ki Won Moon , Hye Ran Oh
发明人： Jong Ik Park , Yu Seung Kim , Ki Won Moon , Hye Ran Oh
IPC分类号： H01S5/00
CPC分类号： H01S5/4025 , H01S3/08086 , H01S3/0809
摘要： A semiconductor laser device comprises: a substrate having a top surface divided into a first region and a second region; a high-output LD including a first conductivity-type clad layer, an active layer, and a second conductivity-type clad layer including an upper portion having a first ridge structure, sequentially formed on the first region of the substrate; and a low-output LD including a first conductivity-type clad layer, an active layer, and a second conductivity-type clad layer including an upper portion having a second ridge structure, sequentially formed on the second region of the substrate, wherein the first and second ridge structures are formed in such a manner that they are extended to both ends opposed to each other, the first ridge structure is bent at two or more bending positions, and the second ridge structure is rectilinear.
摘要翻译：半导体激光装置包括：基板，其具有分为第一区域和第二区域的顶表面; 包括依次形成在所述基板的所述第一区域上的包括具有第一脊结构的上部的第一导电型覆盖层，有源层和第二导电型覆盖层的高输出LD，以及依次形成在所述基板的第二区域上的包括第一导电型覆盖层，有源层和包括具有第二脊结构的上部的第二导电型覆盖层的低输出LD，其中，并且第二脊结构形成为使得它们彼此相对延伸到两个端部，第一脊结构在两个或更多个弯曲位置弯曲，并且第二脊结构是直线的。

2. 发明授权

US06987788B2 High power semiconductor laser device 失效
标题翻译：大功率半导体激光器件
公开(公告)号：US06987788B2
公开(公告)日：2006-01-17
申请号：US10617833
申请日：2003-07-14
申请人： Chong Cook Kim , Ki Won Moon
发明人： Chong Cook Kim , Ki Won Moon
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , H01S5/2031 , H01S5/3211 , H01S5/3213 , H01S5/32316 , H01S2301/18
摘要： A high power semiconductor laser device includes a semiconductor substrate, a lower clad layer formed on the semiconductor substrate, a lower guide layer formed on the lower clad layer, an active layer formed on the lower guide layer, an upper guide layer formed on the active layer, and an upper clad layer formed on the upper guide layer. The lower and upper clad layers have the same refractivity. The lower clad layer includes a high refractivity layer, which is spaced from the lower guide layer by a constant distance, and has a refractivity higher than that of the upper clad layer.
摘要翻译：高功率半导体激光器件包括半导体衬底，形成在半导体衬底上的下覆盖层，形成在下覆盖层上的下引导层，形成在下引导层上的有源层，形成在活性层上的上引导层层，以及形成在上引导层上的上覆层。下层和上层包层具有相同的折射率。下包覆层包括高折射率层，其与下引导层间隔一定距离，并且具有比上覆层更高的折射率。

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