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1. 发明申请

US20080070334A1 LED Including Photonic Crystal Structure 有权
标题翻译：包括光子晶体结构的LED
公开(公告)号：US20080070334A1
公开(公告)日：2008-03-20
申请号：US11868854
申请日：2007-10-08
申请人： Michael Krames , Mihail Sigalas , Jonathan Wierer
发明人： Michael Krames , Mihail Sigalas , Jonathan Wierer
IPC分类号： H01L21/00
CPC分类号： H01L33/20 , H01L33/08 , H01L2224/48091 , H01L2933/0083 , Y10S438/943 , H01L2924/00014
摘要： A photonic crystal light emitting diode (“PXLED”) is provided. The PXLED includes a periodic structure, such as a lattice of holes, formed in the semiconductor layers of an LED. The parameters of the periodic structure are such that the energy of the photons, emitted by the PXLED, lies close to a band edge of the band structure of the periodic structure. Metal electrode layers have a strong influence on the efficiency of the PXLEDs. Also, PXLEDs formed from GaN have a low surface recombination velocity and hence a high efficiency. The PXLEDs are formed with novel fabrication techniques, such as the epitaxial lateral overgrowth technique over a patterned masking layer, yielding semiconductor layers with low defect density. Inverting the PXLED to expose the pattern of the masking layer or using the Talbot effect to create an aligned second patterned masking layer allows the formation of PXLEDs with low defect density.
摘要翻译：提供了一种光子晶体发光二极管（“PXLED”）。 PXLED包括在LED的半导体层中形成的诸如孔格的周期性结构。周期性结构的参数使得由PXLED发射的光子的能量靠近周期性结构的带结构的带边。金属电极层对PXLED的效率有很大的影响。此外，由GaN形成的PXLED具有低表面复合速度，因此具有高效率。 PXLED由新颖的制造技术形成，例如在图案化掩模层上的外延横向过度生长技术，产生具有低缺陷密度的半导体层。将PXLED反转以露出掩模层的图案或使用Talbot效应创建对准的第二图案化掩模层允许形成具有低缺陷密度的PXLED。

2. 发明申请

US20060151794A1 Photonic crystal light emitting device 有权
标题翻译：光子晶体发光装置
公开(公告)号：US20060151794A1
公开(公告)日：2006-07-13
申请号：US11373639
申请日：2006-03-09
申请人： Jonathan Wierer , Michael Krames , Mihail Sigalas
发明人： Jonathan Wierer , Michael Krames , Mihail Sigalas
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , B82Y20/00 , G02B6/1225 , H01L33/08 , H01L2933/0083
摘要： A photonic crystal structure is formed in an n-type layer of a III-nitride light emitting device. In some embodiments, the photonic crystal n-type layer is formed on a tunnel junction. The device includes a first layer of first conductivity type, a first layer of second conductivity type, and an active region separating the first layer of first conductivity type from the first layer of second conductivity type. The tunnel junction includes a second layer of first conductivity type and a second layer of second conductivity type and separates the first layer of first conductivity type from a third layer of first conductivity type. A photonic crystal structure is formed in the third layer of first conductivity type.
摘要翻译：在III族氮化物发光器件的n型层中形成光子晶体结构。在一些实施例中，在隧道结上形成光子晶体n型层。该器件包括第一导电类型的第一层，第二导电类型的第一层和将第一导电类型的第一层与第一导电类型的第一层分开的有源区。隧道结包括第一导电类型的第二层和第二导电类型的第二层，并且将第一导电类型的第一层与第一导电类型的第三层分离。在第一导电类型的第三层中形成光子晶体结构。

3. 发明申请

US20050082545A1 PHOTONIC CRYSTAL LIGHT EMITTING DEVICE 有权
标题翻译：光电晶体发光器件
公开(公告)号：US20050082545A1
公开(公告)日：2005-04-21
申请号：US10691026
申请日：2003-10-21
申请人： Jonathan Wierer , Michael Krames , Mihail Sigalas
发明人： Jonathan Wierer , Michael Krames , Mihail Sigalas
IPC分类号： G02B6/122 , H01L33/08 , H01L33/20 , H01L27/15
CPC分类号： H01L33/20 , B82Y20/00 , G02B6/1225 , H01L33/08 , H01L2933/0083
摘要： A photonic crystal structure is formed in an n-type layer of a III-nitride light emitting device. In some embodiments, the photonic crystal n-type layer is formed on a tunnel junction. The device includes a first layer of first conductivity type, a first layer of second conductivity type, and an active region separating the first layer of first conductivity type from the first layer of second conductivity type. The tunnel junction includes a second layer of first conductivity type and a second layer of second conductivity type and separates the first layer of first conductivity type from a third layer of first conductivity type. A photonic crystal structure is formed in the third layer of first conductivity type.
摘要翻译：在III族氮化物发光器件的n型层中形成光子晶体结构。在一些实施例中，在隧道结上形成光子晶体n型层。该器件包括第一导电类型的第一层，第二导电类型的第一层和将第一导电类型的第一层与第一导电类型的第一层分开的有源区。隧道结包括第一导电类型的第二层和第二导电类型的第二层，并且将第一导电类型的第一层与第一导电类型的第三层分离。在第一导电类型的第三层中形成光子晶体结构。

4. 发明申请

US20060163606A1 Photonic crystal light emitting device 有权
标题翻译：光子晶体发光装置
公开(公告)号：US20060163606A1
公开(公告)日：2006-07-27
申请号：US11373636
申请日：2006-03-09
申请人： Jonathan Wierer , Michael Krames , John Epler
发明人： Jonathan Wierer , Michael Krames , John Epler
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/10 , H01L33/22 , H01L33/382 , H01L33/62 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region. A reflector is formed on a surface of the p-type region opposite the active region. In some embodiments, the growth substrate on which the n-type region, active region, and p-type region are grown is removed, in order to facilitate forming the photonic crystal in an an-type region of the device, and to facilitate forming the reflector on a surface of the p-type region underlying the photonic crystal. The photonic crystal and reflector form a resonant cavity, which may allow control of light emitted by the active region.
摘要翻译：在包括夹在n型区域和p型区域之间的有源区域的III族氮化物半导体结构的n型区域中形成光子晶体结构。在与有源区相对的p型区域的表面上形成反射体。在一些实施例中，除去其上生长n型区域，活性区域和p型区域的生长衬底，以便于在器件的类型区域中形成光子晶体，并且有利于形成在光子晶体下面的p型区域的表面上的反射器。光子晶体和反射器形成谐振腔，其可以允许控制由有源区发射的光。

5. 发明申请

US20050205883A1 Photonic crystal light emitting device 审中-公开
标题翻译：光子晶体发光装置
公开(公告)号：US20050205883A1
公开(公告)日：2005-09-22
申请号：US10804810
申请日：2004-03-19
申请人： Jonathan Wierer , Michael Krames , John Epler
发明人： Jonathan Wierer , Michael Krames , John Epler
IPC分类号： H01L33/00 , H01L33/10 , H01L33/20 , H01L33/38 , H01L33/62
CPC分类号： H01L33/0079 , H01L33/10 , H01L33/22 , H01L33/382 , H01L33/62 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region. A reflector is formed on a surface of the p-type region opposite the active region. In some embodiments, the growth substrate on which the n-type region, active region, and p-type region are grown is removed, in order to facilitate forming the photonic crystal in an an-type region of the device, and to facilitate forming the reflector on a surface of the p-type region underlying the photonic crystal. The photonic crystal and reflector form a resonant cavity, which may allow control of light emitted by the active region.
摘要翻译：在包括夹在n型区域和p型区域之间的有源区域的III族氮化物半导体结构的n型区域中形成光子晶体结构。在与有源区相对的p型区域的表面上形成反射体。在一些实施例中，除去其上生长n型区域，活性区域和p型区域的生长衬底，以便于在器件的类型区域中形成光子晶体，并且有利于形成在光子晶体下面的p型区域的表面上的反射器。光子晶体和反射器形成谐振腔，其可以允许控制由有源区发射的光。

6. 发明申请

US20070267646A1 Light Emitting Device Including a Photonic Crystal and a Luminescent Ceramic 审中-公开
标题翻译：包含光子晶体和发光陶瓷的发光器件
公开(公告)号：US20070267646A1
公开(公告)日：2007-11-22
申请号：US11829799
申请日：2007-07-27
申请人： Jonathan Wierer , Serge Bierhuizen , Aurelien David , Michael Krames , Richard Weiss
发明人： Jonathan Wierer , Serge Bierhuizen , Aurelien David , Michael Krames , Richard Weiss
IPC分类号： H01L33/00
CPC分类号： H01L33/505 , B82Y20/00 , C04B35/44 , C04B35/547 , C04B35/584 , C04B35/597 , C04B35/6268 , C04B35/64 , C04B35/645 , C04B2235/3213 , C04B2235/3224 , C04B2235/3225 , C04B2235/3286 , C04B2235/6027 , C04B2235/662 , C09K11/7774 , H01L33/007 , H01L33/0079 , H01L33/105 , H01L33/20 , H01L33/405 , H01L33/501 , H01L33/58 , H01L33/60 , H01L33/644 , H01L2924/0002 , H01L2933/0083 , H01S5/105 , H01S5/34333 , H01L2924/00
摘要： A semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region and a photonic crystal formed within or on a surface of the semiconductor structure is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength converting material such as a phosphor.
摘要翻译：包括设置在n型区域和p型区域之间的发光层和形成在半导体结构的表面内或表面上的光子晶体的半导体结构与设置在发射光的路径中的陶瓷层组合通过发光层。陶瓷层由磷光体等波长转换材料构成或包含波长转换材料。

7. 发明申请

US20060284187A1 Grown photonic crystals in semiconductor light emitting devices 有权
公开(公告)号：US20060284187A1
公开(公告)日：2006-12-21
申请号：US11156105
申请日：2005-06-17
申请人： Jonathan Wierer , Michael Krames , Nathan Gardner
发明人： Jonathan Wierer , Michael Krames , Nathan Gardner
IPC分类号： H01L27/15
CPC分类号： C30B29/60 , B82Y20/00 , G02B6/1225 , H01L33/08 , H01L33/18 , H01L33/24 , H01L2933/0083 , H01S5/105 , H01S5/34333
摘要： A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The photonic crystal may be multiple regions of semiconductor material separated by a material having a different refractive index than the semiconductor material. For example, the photonic crystal may be posts of semiconductor material grown in the structure and separated by air gaps or regions of masking material. Growing the photonic crystal, rather than etching a photonic crystal into an already-grown semiconductor layer, avoids damage caused by etching which may reduce efficiency, and provides uninterrupted, planar surfaces on which to form electric contacts.

8. 发明申请

US20060202215A1 Polarization-reversed III-nitride light emitting device 有权
标题翻译：极化反转的III族氮化物发光器件
公开(公告)号：US20060202215A1
公开(公告)日：2006-09-14
申请号：US11080022
申请日：2005-03-14
申请人： Jonathan Wierer , M. Craford , John Epler , Michael Krames
发明人： Jonathan Wierer , M. Craford , John Epler , Michael Krames
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/0079 , H01L33/16 , H01S5/0213 , H01S5/0215 , H01S5/0217 , H01S5/02208 , H01S5/3202 , H01S5/32341 , H01S2304/00
摘要： A device structure includes a III-nitride wurtzite semiconductor light emitting region disposed between a p-type region and an n-type region. A bonded interface is disposed between two surfaces, one of the surfaces being a surface of the device structure. The bonded interface facilitates an orientation of the wurtzite c-axis in the light emitting region that confines carriers in the light emitting region, potentially increasing efficiency at high current density.
摘要翻译：器件结构包括设置在p型区域和n型区域之间的III族氮化物纤锌矿半导体发光区域。键合界面设置在两个表面之间，其中一个表面是器件结构的表面。结合界面有利于限制发光区域中的载流子的发光区域中的纤锌矿c轴的取向，在高电流密度下潜在地提高效率。

9. 发明申请

US20060014310A1 Resonant cavity III-nitride light emitting devices fabricated by growth substrate removal 审中-公开
标题翻译：通过生长衬底去除制造的谐振腔III族氮化物发光器件
公开(公告)号：US20060014310A1
公开(公告)日：2006-01-19
申请号：US11227416
申请日：2005-09-14
申请人： John Epler , Michael Krames , Jonathan Wierer
发明人： John Epler , Michael Krames , Jonathan Wierer
IPC分类号： H01L21/00
CPC分类号： H01L33/465 , H01L33/007 , H01L33/0079 , H01L33/22
摘要： A semiconductor light emitting device includes an n-type region, a p-type region, and light emitting region disposed between the n- and p-type regions. The n-type, p-type, and light emitting regions form a cavity having a top surface and a bottom surface. Both the top surface and the bottom surface of the cavity may have a rough surface. For example, the surface may have a plurality of peaks separated by a plurality of valleys. In some embodiments, the thickness of the cavity is kept constant by incorporating an etch-stop layer into the device, then thinning the layers of the device by a process that terminates on the etch-stop layer.
摘要翻译：半导体发光器件包括n型区域，p型区域和设置在n型区域和p型区域之间的发光区域。 n型，p型和发光区形成具有顶表面和底表面的空腔。空腔的顶表面和底表面都可以具有粗糙的表面。例如，表面可以具有由多个谷分隔的多个峰。在一些实施例中，通过将蚀刻停止层并入该器件中，使空腔的厚度保持恒定，然后通过终止于蚀刻停止层上的工艺使器件的层变薄。

10. 发明申请

US20050205884A1 Semiconductor light emitting devices including in-plane light emitting layers 失效
标题翻译：包括平面内发光层的半导体发光器件
公开(公告)号：US20050205884A1
公开(公告)日：2005-09-22
申请号：US10805424
申请日：2004-03-19
申请人： Jarnes Kim , John Epler , Nathan Gardner , Michael Krames , Jonathan Wierer
发明人： Jarnes Kim , John Epler , Nathan Gardner , Michael Krames , Jonathan Wierer
IPC分类号： G02B5/30 , H01L33/10 , H01L33/18 , H01L33/32 , H01L33/40 , H01L33/46 , H01S5/183 , H01S5/323 , H01L33/00
CPC分类号： H01L33/18 , H01L25/0756 , H01L33/105 , H01L33/32 , H01L33/405 , H01L33/46 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A semiconductor light emitting device includes an in-plane active region that emits linearly-polarized light. An in-plane active region may include, for example, a {11{overscore (2)}0} or {10{overscore (1)}0} InGaN light emitting layer. In some embodiments, a polarizer oriented to pass light of a polarization of a majority of light emitted by the active region serves as a contact. In some embodiments, two active regions emitting the same or different colored light are separated by a polarizer oriented to pass light of a polarization of a majority of light emitted by the bottom active region, and to reflect light of a polarization of a majority of light emitted by the top active region. In some embodiments, a polarizer reflects light scattered by a wavelength converting layer.
摘要翻译：半导体发光器件包括发射线偏振光的面内有源区域。面内有源区可以包括例如{11 {过滤（20）或{10 {超（10）InGaN发光层）。在一些实施例中，定向为使通过大部分在一些实施例中，发射相同或不同着色光的两个有源区域被定向成通过底部有源区域发射的大部分光的偏振光的偏振器隔开，以及以反射由顶部有源区域发射的大部分光的偏振光。在一些实施例中，偏振器反射由波长转换层散射的光。

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