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    • 1. 发明申请
    • METHOD AND APPARATUS FOR WORD LINE SUPPRESSION
    • 方式和装置字线抑制
    • US20130100730A1
    • 2013-04-25
    • US13279375
    • 2011-10-24
    • Jonathan Tsung-Yung CHANGChiting CHENGChien-Kuo SUChung-Cheng CHOUJack LIU
    • Jonathan Tsung-Yung CHANGChiting CHENGChien-Kuo SUChung-Cheng CHOUJack LIU
    • G11C11/40G11C5/14G11C7/12
    • G11C8/08G11C11/418
    • A memory access operation on a bit cell of a digital memory, e.g., a static random access memory (SRAM), is assisted by reducing the word line control voltage for reading and boosting it for writing, thus improving data integrity. The bit cell has cross coupled inverters for storing and retrieving a logic state via bit line connections through a passing gate transistor controlled by the word line. A level of a word line signal controlling the passing gate transistor is shifted from a first voltage value to a higher second voltage value to begin a memory access cycle. The level of the word line signal is shifted from the second voltage value to a third voltage value less than the second voltage value during the access cycle. The word line signal is maintained at the third voltage value for a time interval during the access cycle.
    • 数字存储器的位单元(例如静态随机存取存储器(SRAM))上的存储器访问操作通过减少字线控制电压来进行辅助,用于读取和提升其用于写入,从而提高数据完整性。 位单元具有交叉耦合的反相器,用于经由位线连接通过由字线控制的通过栅极晶体管来存储和取回逻辑状态。 控制通过栅极晶体管的字线信号的电平从第一电压值移位到较高的第二电压值,以开始存储器访问周期。 在访问周期期间,字线信号的电平从第二电压值移位到小于第二电压值的第三电压值。 在访问周期期间,字线信号保持在第三电压值一段时间间隔。