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    • 4. 发明授权
    • Localized enhancement of multilayer substrate thickness for high Q RF components
    • 用于高Q RF组件的多层衬底厚度的局部增强
    • US07221244B2
    • 2007-05-22
    • US11237056
    • 2005-09-28
    • John C. EstesRodolfo LuceroAnthony M. Pavio
    • John C. EstesRodolfo LuceroAnthony M. Pavio
    • H03H11/00
    • H03H9/0557H01P1/203H03H9/02913H05K1/0218H05K1/0237H05K1/0243H05K1/16H05K1/181H05K1/185H05K2201/09618H05K2201/09972H05K2201/10371Y10T29/4913Y10T29/49137Y10T29/49146Y10T29/49165Y10T29/53174Y10T29/53178
    • An exemplary system and method for providing differential adjustment of the height of a multilayer substrate in localized areas for improved Q-factor performance of RF devices is disclosed as comprising inter alia: a multilayer substrate (200); an RF component (210) embedded in the substrate (200); a surface mounted component (220); and an RF shield (260) disposed next to the surface mounted component (220), wherein the height of the shield (260) does not extend substantially beyond the height of the surface mounted component (220). Disclosed features and specifications may be variously controlled, configured, adapted or otherwise optionally modified to further improve or otherwise optimize Q, RF performance and/or material characteristics. Exemplary embodiments of the present invention representatively provide for high-performance, high-quality RF devices that may be readily incorporated with existing technologies for the improvement of frequency response, device package form factors, weights and/or other manufacturing, device or material performance metrics.
    • 公开了一种用于在局部区域中对多层基板的高度进行差分调整以提高RF器件的Q因子性能的示例性系统和方法,其特别包括:多层衬底(200); 嵌入在所述基板(200)中的RF部件(210); 表面安装部件(220); 以及靠近所述表面安装部件(220)设置的RF屏蔽件(260),其中所述屏蔽件(260)的高度基本上不超过所述表面安装部件(220)的高度。 公开的特征和规范可以被不同地控制,配置,适配或以其他方式任意地修改,以进一步改善或者优化Q,RF性能和/或材料特性。 本发明的示例性实施例代表性地提供了可以容易地与用于改进频率响应,设备包装形状因子,重量和/或其他制造,设备或材料性能度量的现有技术结合的高性能,高质量的RF设备 。
    • 6. 发明授权
    • Field emission device having an electroplated structure and method for
the fabrication thereof
    • 具有电镀结构的场致发射器件及其制造方法
    • US06084339A
    • 2000-07-04
    • US53436
    • 1998-04-01
    • Chenggang XieRodolfo LuceroJohann Trujillo
    • Chenggang XieRodolfo LuceroJohann Trujillo
    • H01J3/02H01J29/46H01J31/12
    • H01J29/467H01J3/022
    • A field emission device (100) includes an electroplated structure (122) and an electron emitter (118). Electroplated structure (122) includes a base (124), which is disposed proximate to electron emitter (118) and is made from the same material from which electron emitter (118) is made. Electroplated structure (122) further includes an electroplating electrode (126), which is disposed on base (124), and an electroplated layer (128), which is disposed on electroplating electrode (126). A method for fabricating field emission device (100) includes a step of forming electron emitter (118) and further includes a step of forming base (124) during the step of forming electron emitter (118). The method further includes a step of completely encapsulating electron emitter (118) prior to a step of forming electroplated layer (128).
    • 场致发射器件(100)包括电镀结构(122)和电子发射器(118)。 电镀结构(122)包括靠近电子发射器(118)设置并由制造电子发射器(118)的相同材料制成的基座(124)。 电镀结构(122)还包括设置在基底(124)上的电镀电极(126)和设置在电镀电极(126)上的电镀层(128)。 一种用于制造场发射器件(100)的方法包括形成电子发射器(118)的步骤,并且还包括在形成电子发射器(118)的步骤期间形成基极(124)的步骤。 该方法还包括在形成电镀层(128)的步骤之前完全封装电子发射器(118)的步骤。
    • 8. 发明授权
    • Method for providing a gray scale in a field emission display
    • 在场发射显示器中提供灰度级的方法
    • US6025819A
    • 2000-02-15
    • US943174
    • 1997-10-03
    • Chenggang XieRobert T. SmithRodolfo Lucero
    • Chenggang XieRobert T. SmithRodolfo Lucero
    • G09G3/20G09G3/22
    • G09G3/22G09G3/2014
    • A method for providing a gray scale in a field emission display (50) includes the step of providing a first driving pulse (214) having a pulse width equal to a pulse width separation (115) between the graphs (100, 200) of total charge response versus pulse width of a driving pulse for the non-ideal field emission display and the corresponding ideal field emission display. The pulse width separation (115) is the horizontal distance between the two graphs (100, 200) at a region wherein the two graphs (100, 200) are generally parallel. The pulse width, t.sub.n, of an nth driving pulse corresponding to an nth gray scale level is given by t.sub.n =t.sub.1 +[n-1]*[(t.sub.N -t.sub.1)/(N-1)], wherein t.sub.1 is the pulse width of the first driving pulse (214), N is the total number of gray scale levels, and t.sub.N is the pulse width of the Nth driving pulse.
    • 一种用于在场发射显示器(50)中提供灰度级的方法包括提供第一驱动脉冲(214)的步骤,该第一驱动脉冲(214)具有等于总共的图形(100,200)之间的脉冲宽度间隔(115)的脉冲宽度 用于非理想场发射显示的驱动脉冲的电荷响应与脉冲宽度以及相应的理想场发射显示。 脉冲宽度分离(115)是两个图形(100,200)大致平行的区域之间的两个图形(100,200)之间的水平距离。 对应于第n个灰度级的第n个驱动脉冲的脉冲宽度tn由tn = t1 + [n-1] * [(tN-t1)/(N-1)]给出,其中t1是脉冲宽度 的第一驱动脉冲(214),N是灰度级的总数,t N是第N驱动脉冲的脉冲宽度。
    • 9. 发明授权
    • Charge dissipation field emission device
    • 电荷耗散场发射装置
    • US5847407A
    • 1998-12-08
    • US794559
    • 1997-02-03
    • Rodolfo LuceroRobert T. SmithLawrence N. Dworsky
    • Rodolfo LuceroRobert T. SmithLawrence N. Dworsky
    • H01J1/304H01L29/66H01L29/06H01L29/12
    • H01J1/3042H01J31/127H01J2201/319
    • A charge dissipation field emission device (200, 300, 400) includes a supporting substrate (210, 310, 410), a cathode (215, 315, 415) formed thereon, a dielectric layer (240, 340, 440) formed on the cathode (215, 315, 415) and having emitter wells (260, 360, 460) and a charge dissipation well (252, 352, 452, 453) exposing a charge-collecting surface (248, 348, 448, 449), for bleeding off gaseous positive charge generated during the operation of the charge dissipation field emission device (200, 300, 400), an electron emitter (270, 370, 470) formed in each of the emitter wells (260, 360, 460), and an anode (280, 380, 480) spaced from the dielectric layer (240, 340, 440) for collecting electrons emitted by the electron emitters (270, 370, 470).
    • 电荷耗散场发射装置(200,300,400)包括支撑衬底(210,310,410),形成在其上的阴极(215,315,415),形成在其上的电介质层(240,340,440) 阴极(215,315,445)并具有暴露电荷收集表面(248,348,448,449)的发射极阱(260,360,460)和电荷耗散阱(252,352,452,453),用于 在电荷耗散场致发射器件(200,300,400)的操作期间产生的气态正电荷渗出,形成在每个发射极阱(260,360,460)中的电子发射器(270,370,470),以及 与所述电介质层(240,340,440)间隔开用于收集由所述电子发射器(270,370,470)发射的电子的阳极(280,380,480)。