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    • 1. 发明申请
    • Integration of electromagnetic detector on integrated chip
    • 电磁检测器集成在集成芯片上
    • US20070258690A1
    • 2007-11-08
    • US11418244
    • 2006-05-05
    • Jonathan GorrellMark DavidsonJean TokarzLev Gasparov
    • Jonathan GorrellMark DavidsonJean TokarzLev Gasparov
    • G02B6/10
    • G02B6/1226B82Y20/00G02B6/4202
    • A device includes an integrated circuit (IC) and at least one ultra-small resonant structure and a detection mechanism are formed on said IC. At least the ultra-small resonant structure portion of the device is vacuum packaged. The ultra-small resonant structure includes a plasmon detector having a transmission line. The detector mechanism includes a generator mechanism constructed and adapted to generate a beam of charged particles along a path adjacent to the transmission line; and a detector microcircuit disposed along said path, at a location after said beam has gone past said line, wherein the generator mechanism and the detector microcircuit are disposed adjacent transmission line and wherein a beam of charged particles from the generator mechanism to the detector microcircuit electrically couples a plasmon wave traveling along the metal transmission line to the microcircuit. The detector mechanism may be electrically connected to the underlying IC.
    • 一种器件包括集成电路(IC),并且至少一个超小型谐振结构和检测机构形成在所述IC上。 至少装置的超小型谐振结构部分被真空包装。 超小型谐振结构包括具有传输线的等离子体检测器。 检测器机构包括一个发生器机构,其被构造和适于沿着与传输线相邻的路径产生带电粒子束; 以及沿着所述路径设置在所述光束已经经过所述线之后的位置处的检测器微电路,其中所述发生器机构和所述检测器微电路邻近传输线设置,并且其中从发生器机构到所述检测器微电路的带电粒子束电 将沿着金属传输线行进的等离子体波耦合到微电路。 检测器机构可以电连接到底层IC。
    • 5. 发明授权
    • Integration of electromagnetic detector on integrated chip
    • 电磁检测器集成在集成芯片上
    • US07554083B2
    • 2009-06-30
    • US11418244
    • 2006-05-05
    • Jonathan GorrellMark DavidsonJean TokarzLev Gasparov
    • Jonathan GorrellMark DavidsonJean TokarzLev Gasparov
    • H01J3/26H04B10/06
    • G02B6/1226B82Y20/00G02B6/4202
    • A device includes an integrated circuit (IC) and at least one ultra-small resonant structure and a detection mechanism are formed on said IC. At least the ultra-small resonant structure portion of the device is vacuum packaged. The ultra-small resonant structure includes a plasmon detector having a transmission line. The detector mechanism includes a generator mechanism constructed and adapted to generate a beam of charged particles along a path adjacent to the transmission line; and a detector microcircuit disposed along said path, at a location after said beam has gone past said line, wherein the generator mechanism and the detector microcircuit are disposed adjacent transmission line and wherein a beam of charged particles from the generator mechanism to the detector microcircuit electrically couples a plasmon wave traveling along the metal transmission line to the microcircuit. The detector mechanism may be electrically connected to the underlying IC.
    • 一种器件包括集成电路(IC),并且至少一个超小型谐振结构和检测机构形成在所述IC上。 至少装置的超小型谐振结构部分被真空包装。 超小型谐振结构包括具有传输线的等离子体检测器。 检测器机构包括一个发生器机构,其被构造和适于沿着与传输线相邻的路径产生带电粒子束; 以及沿着所述路径设置在所述光束已经经过所述线之后的位置处的检测器微电路,其中所述发生器机构和所述检测器微电路邻近传输线设置,并且其中从发生器机构到所述检测器微电路的带电粒子束电 将沿着金属传输线行进的等离子体波耦合到微电路。 检测器机构可以电连接到底层IC。