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1. 发明授权

US6162694A Method of forming a metal gate electrode using replaced polysilicon structure 有权
标题翻译：使用取代的多晶硅结构形成金属栅电极的方法
公开(公告)号：US6162694A
公开(公告)日：2000-12-19
申请号：US199674
申请日：1998-11-25
申请人： Jon Cheek , Derick Wristers , Mark I Gardner
发明人： Jon Cheek , Derick Wristers , Mark I Gardner
IPC分类号： H01L21/336
CPC分类号： H01L29/6659 , H01L29/66545
摘要： A metal gate electrode formed with high temperature activation of source/drain and LDD implants and a process for manufacture. A polysilicon alignment structure is formed on a silicon substrate. Source/drain regions are formed in alignment with the polysilicon alignment structure, and the alignment structure and the substrate are subjected to a first rapid thermal anneal. LDD implant regions are formed and the alignment structure and the substrate having the LDD regions are subjected to a second rapid thermal anneal. The polysilicon alignment structure is replaced with a metal gate electrode and gate dielectric.
摘要翻译：形成源/漏和LDD植入体的高温活化的金属栅电极和制造方法。在硅衬底上形成多晶硅取向结构。源/漏区形成为与多晶硅对准结构对准，并且对准结构和衬底经受第一快速热退火。形成LDD注入区，并且对准结构和具有LDD区的衬底进行第二次快速热退火。多晶硅取向结构被金属栅电极和栅极电介质代替。

2. 发明授权

US06674135B1 Semiconductor structure having elevated salicided source/drain regions and metal gate electrode on nitride/oxide dielectric 有权
标题翻译：在氮化物/氧化物电介质上具有升高的水银源/漏极区域和金属栅电极的半导体结构
公开(公告)号：US06674135B1
公开(公告)日：2004-01-06
申请号：US09199666
申请日：1998-11-25
申请人： Jon Cheek , Derick Wristers , Mark I. Gardner
发明人： Jon Cheek , Derick Wristers , Mark I. Gardner
IPC分类号： H01L2976
CPC分类号： H01L21/28202 , H01L21/28017 , H01L29/41766 , H01L29/41775 , H01L29/513 , H01L29/518 , H01L29/66545 , H01L29/66628
摘要： A semiconductor structure an a process for its manufacture. First and second gate dielectric layers are formed on a semiconductor substrate between nitride spacers, and a metal gate electrode is formed on the gate dielectric layers. Lightly-doped drain regions and source/drain regions are disposed in the substrate and aligned with the electrode and spacers. A silicide contact layer is disposed over an epitaxial layer on the substrate over the source/drain regions. The metal gate electrode is aligned using a polysilicon alignment structure, which permits high temperature processing before the metal is deposited.
摘要翻译：半导体结构及其制造方法。第一和第二栅极电介质层形成在氮化物间隔物之间的半导体衬底上，并且在栅极电介质层上形成金属栅电极。轻掺杂漏极区和源/漏区设置在衬底中并与电极和间隔物对准。硅化物接触层设置在源/漏区上的衬底上的外延层上。使用多晶硅取向结构对准金属栅电极，其可以在金属沉积之前进行高温处理。

3. 发明授权

US6104077A Semiconductor device having gate electrode with a sidewall air gap 失效
标题翻译：具有具有侧壁气隙的栅电极的半导体器件
公开(公告)号：US6104077A
公开(公告)日：2000-08-15
申请号：US60160
申请日：1998-04-14
申请人： Mark I. Gardner , Derick Wristers , Jon Cheek
发明人： Mark I. Gardner , Derick Wristers , Jon Cheek
IPC分类号： H01L21/266 , H01L21/28 , H01L21/336 , H01L29/423 , H01L29/49 , H01L29/00 , H01L29/76 , H01L29/94 , H01L31/062
CPC分类号： H01L29/66598 , H01L21/266 , H01L21/28114 , H01L29/42376 , H01L29/4983 , H01L29/4991 , H01L29/665 , H01L29/6659
摘要： A semiconductor device having a gate electrode with a sidewall air gap is provided. In accordance with this embodiment, at least one gate electrode is formed over a substrate. A spacer is then formed adjacent an upper sidewall portion of the gate electrode such that an open area is left beneath the spacer. Next, a dielectric layer is formed over the spacer and the gate electrode, thereby leaving an air gap in the open area. In accordance with one aspect of the invention, both the gate electrode and the spacer adjacent the gate electrode are formed from polysilicon. This, for example, allows the formation of a wider contact area to the gate electrode.
摘要翻译：提供具有侧壁气隙的栅电极的半导体器件。根据本实施例，在衬底上形成至少一个栅电极。然后在栅电极的上侧壁部分附近形成间隔件，使得开口区域留在间隔件下方。接下来，在间隔物和栅电极之上形成介电层，从而在开放区域中留下空隙。根据本发明的一个方面，栅电极和与栅电极相邻的间隔物均由多晶硅形成。例如，这允许形成更宽的与栅电极的接触面积。

4. 发明授权

US06638829B1 Semiconductor structure having a metal gate electrode and elevated salicided source/drain regions and a method for manufacture 失效
标题翻译：具有金属栅电极和升高的水银源/漏区的半导体结构及其制造方法
公开(公告)号：US06638829B1
公开(公告)日：2003-10-28
申请号：US09199960
申请日：1998-11-25
申请人： Jon Cheek , Derick Wristers , Mark I. Gardner
发明人： Jon Cheek , Derick Wristers , Mark I. Gardner
IPC分类号： H01L21336
CPC分类号： H01L29/66628 , H01L21/28079 , H01L29/66545
摘要： A semiconductor structure and a process for its manufacture. A metal gate electrode is formed on a semiconductor substrate, the gate electrode being between nitride spacers. Lightly-doped drain regions and source/drain regions are disposed in the substrate and aligned with the electrode and spacers. A silicide contact layer is disposed over an epitaxial layer on the substrate over the source/drain regions.
摘要翻译：半导体结构及其制造方法。金属栅电极形成在半导体衬底上，栅极位于氮化物衬垫之间。轻掺杂漏极区和源/漏区设置在衬底中并与电极和间隔物对准。硅化物接触层设置在源/漏区上的衬底上的外延层上。

5. 发明授权

US6100148A Semiconductor device having a liner defining the depth of an active region, and fabrication thereof 失效
标题翻译：半导体器件具有限定有源区的深度的衬垫及其制造
公开(公告)号：US6100148A
公开(公告)日：2000-08-08
申请号：US995023
申请日：1997-12-19
申请人： Mark I. Gardner , Derick Wristers , Jim H. Fulford
发明人： Mark I. Gardner , Derick Wristers , Jim H. Fulford
IPC分类号： H01L21/265 , H01L21/336 , H01L29/06 , H01L29/10
CPC分类号： H01L29/6659 , H01L21/26506 , H01L29/0653 , H01L29/1083
摘要： A semiconductor device having a liner which defines the depth of an active region and a process for fabricating such a device is disclosed. The use of a liner can, for example, allow the formation of shallower source/drain regions and enhance the performance of the device. In accordance with one aspect of the process, a semiconductor device is formed by forming a gate electrode over a substrate and forming a liner in the substrate adjacent to the gate electrode. An active region is then formed in the substrate, whereby the depth of an active region is defined by the liner. The liner can be formed from several materials including, for example, n-type and p-type dopants and/or oxygen-bearing species.
摘要翻译：公开了一种具有限定有源区的深度的衬垫的半导体器件和用于制造这种器件的工艺。衬垫的使用可以例如允许形成更浅的源极/漏极区域并增强器件的性能。根据该方法的一个方面，通过在衬底上形成栅电极并在与栅电极相邻的衬底中形成衬垫来形成半导体器件。然后在衬底中形成有源区，由此衬里限定有源区的深度。衬垫可以由几种材料形成，包括例如n型和p型掺杂剂和/或含氧物质。

6. 发明授权

US6093611A Oxide liner for high reliability with reduced encroachment of the source/drain region 失效
标题翻译：氧化物衬垫具有高可靠性，减少了源极/漏极区域的侵入
公开(公告)号：US6093611A
公开(公告)日：2000-07-25
申请号：US994502
申请日：1997-12-19
申请人： Mark I. Gardner , Derick Wristers , H. Jim Fulford, Jr.
发明人： Mark I. Gardner , Derick Wristers , H. Jim Fulford, Jr.
IPC分类号： H01L21/762 , H01L21/336 , H01L21/76
CPC分类号： H01L21/76224
摘要： A semiconductor process in which a first nitrogen bearing oxide is formed on an upper surface of a semiconductor substrate. A silicon nitride layer is then formed on the nitrogen bearing oxide. The first oxide and the silicon nitride layer are then patterned to expose an upper surface of the substrate over a trench region of the substrate. An isolation trench is then etched into the trench region of the substrate and a nitrogen bearing liner oxide is then formed on sidewalls and a floor of the trench. An isolation dielectric is then formed within the trench and, thereafter, the silicon nitride layer is removed from the wafer. A suitable thickness of the first nitrogen bearing oxide and of the liner oxide is in the range of approximately 30 to 100 angstroms. A consumption of adjacent active regions caused by the thermal oxidation process is preferably less than approximately 50 angstroms.
摘要翻译：在半导体衬底的上表面上形成第一含氮氧化物的半导体工艺。然后在含氮氧化物上形成氮化硅层。然后将第一氧化物和氮化硅层图案化以在衬底的沟槽区域上露出衬底的上表面。然后将隔离沟槽蚀刻到衬底的沟槽区域中，然后在沟槽的侧壁和底板上形成含氮衬里氧化物。然后在沟槽内形成隔离电介质，然后从晶片上去除氮化硅层。第一含氮氧化物和衬里氧化物的合适厚度在约30至100埃的范围内。由热氧化过程引起的相邻活性区域的消耗优选小于约50埃。

7. 发明授权

US07208383B1 Method of manufacturing a semiconductor component 有权
标题翻译：制造半导体部件的方法
公开(公告)号：US07208383B1
公开(公告)日：2007-04-24
申请号：US10284651
申请日：2002-10-30
申请人： Chad Weintraub , James F. Buller , Derick Wristers , Jon Cheek
发明人： Chad Weintraub , James F. Buller , Derick Wristers , Jon Cheek
IPC分类号： H01L21/336
CPC分类号： H01L21/26586 , H01L29/1045 , H01L29/1083 , H01L29/665 , H01L29/66659
摘要： An insulated gate field effect transistor having reduced gate-drain overlap and a method for manufacturing the insulated gate field effect transistor. A gate structure is formed on a major surface of a semiconductor substrate. A source extension region and a drain extension region are formed in a semiconductor material using an angled implant. The source extension region extends under the gate structure, whereas the drain extension region is laterally spaced apart from the gate structure. A source region is formed in the semiconductor substrate and a drain region is formed in the semiconductor substrate, where the source and drain regions are laterally spaced apart from the gate structure. A source-side halo region is formed in the semiconductor substrate adjacent the source extension region.
摘要翻译：具有减小的栅 - 漏重叠的绝缘栅场效应晶体管和用于制造绝缘栅场效应晶体管的方法。栅极结构形成在半导体衬底的主表面上。源极延伸区域和漏极延伸区域使用成角度的植入物形成在半导体材料中。源极延伸区域在栅极结构下方延伸，而漏极延伸区域与栅极结构横向间隔开。源极区域形成在半导体衬底中，并且在半导体衬底中形成漏极区域，其中源极区域和漏极区域与栅极结构横向间隔开。源极侧晕区形成在与源延伸区相邻的半导体衬底中。

8. 发明授权

US06833307B1 Method for manufacturing a semiconductor component having an early halo implant 失效
标题翻译：具有早期晕圈植入物的半导体部件的制造方法
公开(公告)号：US06833307B1
公开(公告)日：2004-12-21
申请号：US10284675
申请日：2002-10-30
申请人： Derick Wristers , Chad Weintraub , James F. Buller , Jon Cheek
发明人： Derick Wristers , Chad Weintraub , James F. Buller , Jon Cheek
IPC分类号： H01L21336
CPC分类号： H01L29/66659 , H01L21/26586 , H01L21/823807 , H01L29/1045 , H01L29/665 , H01L29/6656 , H01L29/7835
摘要： An insulated gate field effect semiconductor component having a source-side halo region and a method for manufacturing the semiconductor component. A gate structure is formed on a semiconductor substrate. The source-side halo region is formed in the semiconductor substrate. After formation of the source-side halo region, spacers are formed adjacent opposing sides of the gate structure. A source extension region and a drain extension region are formed in the semiconductor substrate using an angled implant. The source extension region extends under the gate structure, whereas the drain extension may extend under the gate structure or be laterally spaced apart from the gate structure. A source region and a drain region are formed in the semiconductor substrate.
摘要翻译：具有源极侧卤素区域的绝缘栅场效应半导体元件和半导体元件的制造方法。栅极结构形成在半导体衬底上。在半导体衬底中形成源极侧晕区。在形成源极侧光晕区域之后，在栅极结构的相对侧附近形成间隔物。源极延伸区域和漏极延伸区域使用成角度的植入物形成在半导体衬底中。源极延伸区域在栅极结构下方延伸，而漏极延伸部可以在栅极结构下方延伸或者与栅极结构横向间隔开。在半导体衬底中形成源极区和漏极区。

9. 发明授权

US6159812A Reduced boron diffusion by use of a pre-anneal 失效
标题翻译：通过使用预退火来减少硼的扩散
公开(公告)号：US6159812A
公开(公告)日：2000-12-12
申请号：US20175
申请日：1998-02-06
申请人： Jon Cheek , William A. Whigham , Derick Wristers
发明人： Jon Cheek , William A. Whigham , Derick Wristers
IPC分类号： H01L21/265 , H01L21/336 , H01L21/8238
CPC分类号： H01L29/6659 , H01L21/26513 , H01L21/823814 , H01L29/6656
摘要： A method for slowing the diffusion of boron ions in a CMOS structure includes a preanneal step which can be incorporated as part of a step in which silane is deposited across the surface of the wafer. After the last implant on a CMOS device, silane (SiH.sub.4) is deposited over the surface of the wafer using a chemical vapor deposition (CVD) tool. The deposition of silane is done at 400.degree. C. The temperature is raised in the CVD tool to a temperature in the range of 550.degree. C. to 650.degree. C. and held for 30-60 minutes. This temperature does not affect the thin film of silicon which is formed from the silane, yet provides the necessary thermal cycle to "repair" the crucial first 200 .ANG. to 600 .ANG. of the silicon surface. Normal processing steps, including a rapid thermal anneal for 30 seconds at 1025.degree. C. follow. The RTA is necessary to activate the dopants (arsenic and boron) in the source and drain of the respective devices. The boron dopant species diffuses less during subsequent rapid thermal anneal cycles since the crucial first 200 .ANG. to 600 .ANG. of the silicon surface have been repaired using this preanneal step.
摘要翻译：用于减缓CMOS结构中硼离子的扩散的方法包括预退火步骤，其可以作为其中硅烷沉积在晶片的表面上的步骤的一部分而被并入。在CMOS装置上最后一次植入之后，使用化学气相沉积（CVD）工具将硅烷（SiH4）沉积在晶片的表面上。硅烷的沉积在400℃下进行。将温度在CVD工具中升高至550℃至650℃的温度，并保持30-60分钟。该温度并不影响由硅烷形成的硅薄膜，而是提供了必要的热循环，以“修复”硅表面的至关重要的第一个200 ANGSTROM至600 ANGSTROM。正常加工步骤，包括在1025℃快速热退火30秒。 RTA需要激活各个器件的源极和漏极中的掺杂剂（砷和硼）。在随后的快速热退火循环中硼掺杂物种类扩散较少，因为使用该预退火步骤修复了硅表面的至关重要的第一个200 ANGSTROM至600 ANGSTROM。

10. 发明授权

US5977600A Formation of shortage protection region 失效
标题翻译：形成短缺保护区
公开(公告)号：US5977600A
公开(公告)日：1999-11-02
申请号：US2695
申请日：1998-01-05
申请人： Derick Wristers , Jon Cheek , H. James Fulford
发明人： Derick Wristers , Jon Cheek , H. James Fulford
IPC分类号： H01L21/28 , H01L21/336 , H01L21/762 , H01L21/768 , H01L29/94
CPC分类号： H01L21/28211 , H01L21/28176 , H01L21/762 , H01L29/6656 , H01L29/6659 , H01L21/76895 , H01L23/485 , H01L2924/0002 , Y10S257/90
摘要： The formation of a shortage protection region is disclosed. In one embodiment, a method includes three steps. In the first step, a first ion implantation is applied to form lightly doped regions within a semiconductor substrate adjacent to sidewalls of a gate over the substrate. In the second step, two spaces are formed on the substrate, each adjacent to a sidewall of the gate, so that a second ion implantation forms heavily doped regions within the substrate adjacent to the first spacers. In the third step, two additional spacers are formed on the substrate, each overlapping and extending beyond a corresponding spacer previously formed. Thus, a third ion implantation forms lightly doped shortage protection regions within the substrate adjacent to the spacers most recently formed.
摘要翻译：公开了形成短缺保护区域。在一个实施例中，一种方法包括三个步骤。在第一步骤中，施加第一离子注入以在与衬底上的栅极的侧壁相邻的半导体衬底内形成轻掺杂区域。在第二步骤中，在衬底上形成两个相邻于栅极的侧壁的空间，使得第二离子注入在邻近第一间隔物的衬底内形成重掺杂区域。在第三步骤中，在衬底上形成两个附加间隔物，每个间隔物重叠并延伸超过预先形成的相应间隔物。因此，第三离子注入在与最近形成的间隔物相邻的衬底内形成轻掺杂的短缺保护区。

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