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1. 发明授权

US06184751B2 Amplifier circuit 有权
标题翻译：放大器电路
公开(公告)号：US06184751B2
公开(公告)日：2001-02-06
申请号：US09135441
申请日：1998-08-17
申请人： John Robert Siomkos , Edgar Herbert Callaway, Jr.
发明人： John Robert Siomkos , Edgar Herbert Callaway, Jr.
IPC分类号： H03G318
CPC分类号： H03G1/007 , H03G3/18 , H04B1/18
摘要： An amplifier circuit (20) uses a series transistor (38) to couple the output of an amplifier (26) to a tuned circuit load (40) and to act as a variable resistance. In one embodiment for a multi-band receiver, multiple series transistors (38, 42) are switched for connecting different tuned circuits (40, 44) to the amplifier's output, and an activated one of the series transistors receives a gate voltage that varies its resistance so as to achieve gain control. An activated series transistors can also provide a resistance that stabilizes the amplifier (26).
摘要翻译：放大器电路（20）使用串联晶体管（38）将放大器（26）的输出耦合到调谐电路负载（40）并用作可变电阻。在多频带接收机的一个实施例中，多个串联晶体管（38,42）被切换以将不同的调谐电路（40,44）连接到放大器的输出，并且串联晶体管中激活的一个接收栅极电压，电阻以实现增益控制。激活的串联晶体管还可以提供稳定放大器（26）的电阻。

2. 发明授权

US06259902B1 Dual channel superheterodyne receiver 有权
标题翻译：双通道超外差接收机
公开(公告)号：US06259902B1
公开(公告)日：2001-07-10
申请号：US09181760
申请日：1998-10-29
申请人： John Robert Siomkos , Edgar Herbert Callaway, Jr.
发明人： John Robert Siomkos , Edgar Herbert Callaway, Jr.
IPC分类号： H04B118
CPC分类号： H04B1/28 , H04B1/18
摘要： A dual channel receiver (100) includes a front end bandpass filter (120) that has a front end bandwidth, a first mixer (130), a second mixer (135), and two essentially identical receiver back ends (190, 195). The front end bandpass filter splits a received signal into a first signal (121) and a second signal (122) of essentially equal signal strengths and provides out of band isolation between first and second signal outputs (123, 124). The first mixer is coupled to the first signal and to a high side injection signal (131), and generates a first mixer output signal (132). The second mixer is coupled to the second signal and to a low side injection signal (136), and generates a second mixer output signal (137). Each of the two essentially identical receiver back ends is coupled to one of the first and second mixer output signals.
摘要翻译：双通道接收器（100）包括具有前端带宽的前端带通滤波器（120），第一混频器（130），第二混频器（135）和两个基本相同的接收器后端（190,195）。前端带通滤波器将接收到的信号分离成基本上相等的信号强度的第一信号（121）和第二信号（122），并提供第一和第二信号输出（123,124）之间的带外隔离。第一混频器耦合到第一信号和高端注入信号（131），并产生第一混频器输出信号（132）。第二混频器耦合到第二信号和低侧注入信号（136），并产生第二混频器输出信号（137）。两个基本相同的接收器后端中的每一个耦合到第一和第二混频器输出信号中的一个。

3. 发明授权

US09325353B2 Architecture for a radio frequency front-end 有权
标题翻译：射频前端的架构
公开(公告)号：US09325353B2
公开(公告)日：2016-04-26
申请号：US13611620
申请日：2012-09-12
申请人： John Robert Siomkos , Jayanti Jaganatha Rao , Christopher Truong Ngo
发明人： John Robert Siomkos , Jayanti Jaganatha Rao , Christopher Truong Ngo
IPC分类号： H04B1/38 , H04B1/00
CPC分类号： H04B1/006
摘要： An architecture for a radio frequency (RF) front-end is disclosed. The architecture for the RF front-end includes a circuit module that includes a plurality of dies partitioned on the circuit module. A plurality of filter banks with individual ones of the plurality of filter banks disposed on each of the plurality of circuit dies is also included. Further included is a plurality of switches having individual ones of the plurality of switches coupled to corresponding ones of the plurality of filter banks and in at least one embodiment a control system is configured to open and close selected ones of the plurality of switches.
摘要翻译：公开了一种用于射频（RF）前端的架构。 RF前端的架构包括电路模块，其包括在电路模块上分隔的多个管芯。还包括多个滤波器组，其中设置在多个电路管芯中的每一个上的多个滤波器组中的单个滤波器组。还包括多个开关，其具有耦合到多个滤波器组中的相应开关的多个开关中的各个开关，并且在至少一个实施例中，控制系统被配置为打开和闭合多个开关中的选定开关。

4. 发明授权

US08351221B2 Stacked shield compartments for electronic components 有权
标题翻译：电子元件堆叠屏蔽隔间
公开(公告)号：US08351221B2
公开(公告)日：2013-01-08
申请号：US13006845
申请日：2011-01-14
申请人： John Robert Siomkos , Mark Alan Crandall , Carl Hinshaw
发明人： John Robert Siomkos , Mark Alan Crandall , Carl Hinshaw
IPC分类号： H05K9/00
CPC分类号： H01L25/105 , H01L23/552 , H01L24/16 , H01L24/48 , H01L2224/16225 , H01L2224/48091 , H01L2224/48227 , H01L2225/1023 , H01L2225/1058 , H01L2924/00014 , H01L2924/1461 , H01L2924/3025 , H01L2224/45099 , H01L2924/00
摘要： The present disclosure is related to an electronic assembly in a stacked configuration. Electronic components are formed on substrates at each level of the stacked configuration. Electromagnetic shield compartments may be provided which substantially encapsulate the electronic components. Conductive vias are formed within the substrates on each level of the stacked configuration and coupled to one another so that the electromagnetic shields at each level of the stack can couple to a common node.
摘要翻译：本公开涉及一种堆叠结构的电子组件。电子部件形成在层叠结构的各层的基板上。可以提供基本上封装电子部件的电磁屏蔽室。导电通孔在堆叠构造的每个级别上的衬底内形成并且彼此耦合，使得在堆叠的每个级别处的电磁屏蔽可以耦合到公共节点。

5. 发明授权

US08313985B2 Atomic layer deposition encapsulation for power amplifiers in RF circuits 有权
标题翻译： RF电路中功率放大器的原子层沉积封装
公开(公告)号：US08313985B2
公开(公告)日：2012-11-20
申请号：US13232330
申请日：2011-09-14
申请人： Merrill Albert Hatcher, Jr. , Jayanti Jaganatha Rao , John Robert Siomkos
发明人： Merrill Albert Hatcher, Jr. , Jayanti Jaganatha Rao , John Robert Siomkos
IPC分类号： H01L21/56 , H01L23/29
CPC分类号： H01L23/3185 , H01L23/291 , H01L24/48 , H01L2224/05554 , H01L2224/48091 , H01L2224/8592 , H01L2924/00014 , H01L2924/1305 , H01L2924/1306 , H01L2924/14 , H01L2924/3011 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： Power amplifiers and methods of coating a protective film of alumina (Al2O3) on the power amplifiers are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the power amplifier in a precisely controlled manner. Thus, the ALD process can form a uniform film that is substantially free of free of pin-holes and voids.
摘要翻译：功率放大器和在功率放大器上涂覆氧化铝保护膜（Al 2 O 3）的方法在此公开。通过原子层沉积（ALD）工艺施加保护膜。 ALD工艺可以以精确控制的方式在功率放大器的表面上沉积非常薄的氧化铝层。因此，ALD工艺可以形成基本上不含针孔和空隙的均匀的膜。

6. 发明申请

US20120182706A1 STACKED SHIELD COMPARTMENTS FOR ELECTRONIC COMPONENTS 有权
标题翻译：电子组件的堆叠屏蔽间隔
公开(公告)号：US20120182706A1
公开(公告)日：2012-07-19
申请号：US13006845
申请日：2011-01-14
申请人： John Robert Siomkos , Mark Alan Crandall , Carl Hinshaw
发明人： John Robert Siomkos , Mark Alan Crandall , Carl Hinshaw
IPC分类号： H05K1/11
CPC分类号： H01L25/105 , H01L23/552 , H01L24/16 , H01L24/48 , H01L2224/16225 , H01L2224/48091 , H01L2224/48227 , H01L2225/1023 , H01L2225/1058 , H01L2924/00014 , H01L2924/1461 , H01L2924/3025 , H01L2224/45099 , H01L2924/00
摘要： The present disclosure is related to an electronic assembly in a stacked configuration. Electronic components are formed on substrates at each level of the stacked configuration. Electromagnetic shield compartments may be provided which substantially encapsulate the electronic components. Conductive vias are formed within the substrates on each level of the stacked configuration and coupled to one another so that the electromagnetic shields at each level of the stack can couple to a common node.
摘要翻译：本公开涉及一种堆叠结构的电子组件。电子部件形成在层叠结构的各层的基板上。可以提供基本上封装电子部件的电磁屏蔽室。导电通孔在堆叠构造的每个级别上的衬底内形成并且彼此耦合，使得在堆叠的每个级别处的电磁屏蔽可以耦合到公共节点。

7. 发明授权

US09137934B2 Compartmentalized shielding of selected components 有权
标题翻译：所选组件的隔室屏蔽
公开(公告)号：US09137934B2
公开(公告)日：2015-09-15
申请号：US13189838
申请日：2011-07-25
申请人： Thomas Scott Morris , Ulrik Riis Madsen , Brian D. Sawyer , Milind Shah , John Robert Siomkos , Mark Alan Crandall , Dan Carey
发明人： Thomas Scott Morris , Ulrik Riis Madsen , Brian D. Sawyer , Milind Shah , John Robert Siomkos , Mark Alan Crandall , Dan Carey
IPC分类号： H05K3/30 , H05K9/00 , H05K1/02 , H05K3/28
CPC分类号： H05K9/0024 , H05K1/0218 , H05K3/284 , H05K2201/0715 , H05K2201/09972 , Y10T29/49155
摘要： Embodiments include devices and methods for manufacturing a module having a first shielded compartment and a second shielded compartment, wherein the first shielded compartment is electrically isolated from the second shielded compartment. Electrical conductivity is controlled in a manner in which current flow between shielded circuits is directed to reduce or eliminate energy from being coupled between one or more shielded compartments on the same module. Each module may have a plurality of individual shielded compartments, where each compartment has a dedicated ground plane. The shields for each compartment may be tied to the dedicated ground plane of the compartment. Because the dedicated ground planes are not tied together, each of the shielded compartments on the modules remains isolated from all the other shielded compartments on the modules. In some embodiments having a plurality of shielded compartments, there is at least one isolated shielded compartment depending upon the design needs of the module.
摘要翻译：实施例包括用于制造具有第一屏蔽室和第二屏蔽隔室的模块的装置和方法，其中第一屏蔽室与第二屏蔽室电隔离。控制电导率的方式是使屏蔽电路之间的电流流动被引导以减少或消除能量耦合在同一模块上的一个或多个屏蔽隔间之间。每个模块可以具有多个单独的屏蔽隔室，其中每个隔间具有专用的接地平面。每个隔间的护罩可以连接到隔间的专用接地平面。由于专用接地层并未连接在一起，模块上的每个屏蔽隔间都与模块上所有其他屏蔽隔离隔离。在具有多个屏蔽隔室的一些实施例中，根据模块的设计需要，存在至少一个隔离隔离室。

8. 发明授权

US08440012B2 Atomic layer deposition encapsulation for acoustic wave devices 有权
公开(公告)号：US08440012B2
公开(公告)日：2013-05-14
申请号：US13232319
申请日：2011-09-14
申请人： Merrill Albert Hatcher, Jr. , Jayanti Jaganatha Rao , John Robert Siomkos
发明人： Merrill Albert Hatcher, Jr. , Jayanti Jaganatha Rao , John Robert Siomkos
IPC分类号： C09D1/00 , C09K17/40 , H01L41/09 , H03H9/25
CPC分类号： H01L41/0533 , C23C16/403 , C23C16/45525 , H03H3/08 , H03H9/02929
摘要： Acoustic wave devices and methods of coating a protective film of alumina (Al2O3) on the acoustic wave devices are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the acoustic wave devices in a precisely controlled manner. Thus, the uniform film does not significantly distort the operation of the acoustic wave device.

9. 发明申请

US20130072253A1 ARCHITECTURE FOR A RADIO FREQUENCY FRONT-END 有权
标题翻译：无线电频率前端的架构
公开(公告)号：US20130072253A1
公开(公告)日：2013-03-21
申请号：US13611620
申请日：2012-09-12
申请人： John Robert Siomkos , Jayanti Jaganatha Rao , Christopher Truong Ngo
发明人： John Robert Siomkos , Jayanti Jaganatha Rao , Christopher Truong Ngo
IPC分类号： H04W88/02
CPC分类号： H04B1/006
摘要： An architecture for a radio frequency (RF) front-end is disclosed. The architecture for the RF front-end includes a circuit module that includes a plurality of dies partitioned on the circuit module. A plurality of filter banks with individual ones of the plurality of filter banks disposed on each of the plurality of circuit dies is also included. Further included is a plurality of switches having individual ones of the plurality of switches coupled to corresponding ones of the plurality of filter banks and in at least one embodiment a control system is configured to open and close selected ones of the plurality of switches.
摘要翻译：公开了一种用于射频（RF）前端的架构。 RF前端的架构包括电路模块，其包括在电路模块上分隔的多个管芯。还包括多个滤波器组，其中设置在多个电路管芯中的每一个上的多个滤波器组中的单个滤波器组。还包括多个开关，其具有耦合到多个滤波器组中的相应开关的多个开关中的各个开关，并且在至少一个实施例中，控制系统被配置为打开和闭合多个开关中的选定开关。

10. 发明申请

US20120097970A1 ATOMIC LAYER DEPOSITION ENCAPSULATION FOR POWER AMPLIFIERS IN RF CIRCUITS 有权
标题翻译：射频电路中功率放大器的原子层沉积封装
公开(公告)号：US20120097970A1
公开(公告)日：2012-04-26
申请号：US13232330
申请日：2011-09-14
申请人： John Robert Siomkos , Merrill Albert Hatcher, JR. , Jayanti Jaganatha Rao
发明人： John Robert Siomkos , Merrill Albert Hatcher, JR. , Jayanti Jaganatha Rao
IPC分类号： H01L21/56 , H01L23/48 , H01L29/20 , B82Y99/00 , B82Y40/00
CPC分类号： H01L23/3185 , H01L23/291 , H01L24/48 , H01L2224/05554 , H01L2224/48091 , H01L2224/8592 , H01L2924/00014 , H01L2924/1305 , H01L2924/1306 , H01L2924/14 , H01L2924/3011 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： Power amplifiers and methods of coating a protective film of alumina (Al2O3) on the power amplifiers are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the power amplifier in a precisely controlled manner. Thus, the ALD process can form a uniform film that is substantially free of free of pin-holes and voids.
摘要翻译：功率放大器和在功率放大器上涂覆氧化铝保护膜（Al 2 O 3）的方法在此公开。通过原子层沉积（ALD）工艺施加保护膜。 ALD工艺可以以精确控制的方式在功率放大器的表面上沉积非常薄的氧化铝层。因此，ALD工艺可以形成基本上不含针孔和空隙的均匀的膜。

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