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    • 6. 发明授权
    • Radiation resistant solid state neutron detector
    • 耐辐射固态中子探测器
    • US5726453A
    • 1998-03-10
    • US722388
    • 1996-09-30
    • Randy G. LottFrank H. RuddyAbdul R. Dulloo
    • Randy G. LottFrank H. RuddyAbdul R. Dulloo
    • G01T3/08
    • G01T3/08
    • A radiation resistant solid state neutron detector is disclosed. The detector uses a neutron convertor material such as boron or lithium to react with neutrons to create charged particles that are received in a semiconductor active region of the detector. The active thickness of the detector is smaller than the range of the charged particles. Since most of the radiation damage produced by impinging charged particles occurs near the end of the range of the particles, displacement damage predominantly occurs outside of the active region. Although the charged particles pass through the semiconductor material, the particles cause electron excitation within the semiconductor material which is detected in the form of an electronic pulse. A preferred semiconductor material for the active region is silicon carbide. The detectors provide increased resistance to radiation damage, improve high temperature operation, and the ability to obtain real time measurements of neutron flux in reactor cavities and other previously inaccessible locations.
    • 公开了一种耐辐射固态中子探测器。 检测器使用诸如硼或锂的中子转换器材料与中子反应以产生被接收在检测器的半导体有源区域中的带电粒子。 检测器的有效厚度小于带电粒子的范围。 由于通过撞击带电粒子产生的大部分辐射损伤发生在粒子范围的附近,所以位移损伤主要发生在有源区域之外。 虽然带电粒子通过半导体材料,但是在电子脉冲形式检测的半导体材料内引起电子激发。 用于有源区的优选半导体材料是碳化硅。 检测器提供增加的对辐射损伤的抵抗力,改善高温操作,以及获得反应堆腔和其他先前无法接近的位置中的中子通量的实时测量的能力。