专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110278172A1 ELECTRODEPOSITION UNDER ILLUMINATION WITHOUT ELECTRICAL CONTACTS 有权
标题翻译：在没有电气接触的照明下的电沉积
公开(公告)号：US20110278172A1
公开(公告)日：2011-11-17
申请号：US12778689
申请日：2010-05-12
申请人： John M. Cotte , Harold J. Hovel , Devendra K. Sadana , Xiaoyan Shao , Steven E. Steen
发明人： John M. Cotte , Harold J. Hovel , Devendra K. Sadana , Xiaoyan Shao , Steven E. Steen
IPC分类号： H01L31/18
CPC分类号： H01L31/022425 , C23C18/06 , C23C18/08 , C23C18/14 , C25D5/024 , C25D5/028 , C25D7/123 , C25D7/126 , H01L21/2885 , H01L21/76879 , H01L23/485 , Y02E10/50
摘要： A method of forming patterned metallization by electrodeposition under illumination without external voltage supply on a photovoltaic structure or on n-type region of a transistor/junction.
摘要翻译：通过在照射下电沉积形成图案化金属化的方法，而不需要在光电结构或晶体管/结的n型区域上的外部电压供应。

2. 发明授权

US08795502B2 Electrodeposition under illumination without electrical contacts 有权
标题翻译：在没有电气接触的照明下电沉积
公开(公告)号：US08795502B2
公开(公告)日：2014-08-05
申请号：US12778689
申请日：2010-05-12
申请人： John M. Cotte , Harold J. Hovel , Devendra K. Sadana , Xiaoyan Shao , Steven Erik Steen
发明人： John M. Cotte , Harold J. Hovel , Devendra K. Sadana , Xiaoyan Shao , Steven Erik Steen
IPC分类号： C25D5/00 , C25D5/02 , C25D7/12 , C25D17/00
CPC分类号： H01L31/022425 , C23C18/06 , C23C18/08 , C23C18/14 , C25D5/024 , C25D5/028 , C25D7/123 , C25D7/126 , H01L21/2885 , H01L21/76879 , H01L23/485 , Y02E10/50
摘要： A method of forming patterned metallization by electrodeposition under illumination without external voltage supply on a photovoltaic structure or on n-type region of a transistor/junction.
摘要翻译：通过在照明下电沉积形成图案化金属化的方法，在光电结构或晶体管/结的n型区域上没有外部电压供应。

3. 发明申请

US20120285527A1 LOW RESISTANCE, LOW REFLECTION, AND LOW COST CONTACT GRIDS FOR PHOTOVOLTAIC CELLS 有权
标题翻译：低电阻，低反射率和低成本接触网格的光伏电池
公开(公告)号：US20120285527A1
公开(公告)日：2012-11-15
申请号：US13105607
申请日：2011-05-11
申请人： Ronald Goldblatt , Harold J. Hovel , Xiaoyan Shao , Steven E. Steen
发明人： Ronald Goldblatt , Harold J. Hovel , Xiaoyan Shao , Steven E. Steen
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/18 , E04H4/00 , H01L31/022433 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10T29/49002 , Y10T29/49826
摘要： The instant disclosure relates to contact grids for use in photovoltaic cells, wherein a cross-section of the contact grid fingers is shaped as a trapezoid, as well as a method of making photovoltaic cells comprising these contact grids. The contact grids of the instant disclosure are cost effective and, due to their thick metal grids, exhibit minimum resistance. Despite having thick metal grids, the unique shape of the contact grid fingers of the instant disclosure allow the photovoltaic cells in which they are employed to retain more solar energy than traditional solar cells by reflecting incoming solar energy back onto the surface of the solar cell instead of reflecting this energy away from the cell.
摘要翻译：本公开涉及用于光伏电池的接触栅格，其中接触栅格指的横截面被成形为梯形，以及制造包括这些接触栅格的光伏电池的方法。本公开的接触网格具有成本效益，并且由于其厚的金属网格显示出最小的电阻。尽管具有厚的金属网格，本公开的接触网格指状物的独特形状允许其中使用它们的光伏电池通过将进入的太阳能反射回太阳能电池的表面而保留比传统太阳能电池更多的太阳能，而不是将这种能量从电池中反射出来。

4. 发明授权

US09337363B2 Low resistance, low reflection, and low cost contact grids for photovoltaic cells 有权
标题翻译：低电阻，低反射和低成本的光伏电池接触网格
公开(公告)号：US09337363B2
公开(公告)日：2016-05-10
申请号：US13105607
申请日：2011-05-11
申请人： Ronald Goldblatt , Harold J. Hovel , Xiaoyan Shao , Steven E. Steen
发明人： Ronald Goldblatt , Harold J. Hovel , Xiaoyan Shao , Steven E. Steen
IPC分类号： H01L31/0224 , H01L31/068 , H01L31/18
CPC分类号： H01L31/18 , E04H4/00 , H01L31/022433 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10T29/49002 , Y10T29/49826
摘要： The instant disclosure relates to contact grids for use in photovoltaic cells, wherein a cross-section of the contact grid fingers is shaped as a trapezoid, as well as a method of making photovoltaic cells comprising these contact grids. The contact grids of the instant disclosure are cost effective and, due to their thick metal grids, exhibit minimum resistance. Despite having thick metal grids, the unique shape of the contact grid fingers of the instant disclosure allow the photovoltaic cells in which they are employed to retain more solar energy than traditional solar cells by reflecting incoming solar energy back onto the surface of the solar cell instead of reflecting this energy away from the cell.
摘要翻译：本公开涉及用于光伏电池的接触栅格，其中接触栅格指的横截面被成形为梯形，以及制造包括这些接触栅格的光伏电池的方法。本公开的接触网格具有成本效益，并且由于其厚的金属网格显示出最小的电阻。尽管具有厚的金属网格，本公开的接触网格指状物的独特形状允许其中使用它们的光伏电池通过将进入的太阳能反射回太阳能电池的表面而保留比传统太阳能电池更多的太阳能，而不是将这种能量从电池中反射出来。

5. 发明授权

US10396229B2 Solar cell with interdigitated back contacts formed from high and low work-function-tuned silicides of the same metal 有权
公开(公告)号：US10396229B2
公开(公告)日：2019-08-27
申请号：US13103583
申请日：2011-05-09
申请人： Joel P. De Souza , Harold J. Hovel , Daniel A. Inns , Jeehwan Kim , Christian Lavoie , Devendra K. Sadana , Katherine L. Saenger , Davood Shahrjerdi , Zhen Zhang
发明人： Joel P. De Souza , Harold J. Hovel , Daniel A. Inns , Jeehwan Kim , Christian Lavoie , Devendra K. Sadana , Katherine L. Saenger , Davood Shahrjerdi , Zhen Zhang
IPC分类号： H01L31/07 , H01L31/0224 , H01L31/18 , H01L31/068
摘要： A solar cell having n-type and p-type interdigitated back contacts (IBCs), which cover the entire back surface of the absorber layer. The spatial separation of the IBCs is in a direction perpendicular to the back surface, thus providing borderless contacts having a zero-footprint separation. As the contacts are on the back, photons incident on the cell's front surface can be absorbed without any shadowing.

6. 发明授权

US08653360B2 Compositionally-graded band gap heterojunction solar cell 有权
标题翻译：组分梯度带隙异质结太阳能电池
公开(公告)号：US08653360B2
公开(公告)日：2014-02-18
申请号：US12849966
申请日：2010-08-04
申请人： Stephen W. Bedell , Harold J. Hovel , Daniel A. Inns , Jee H. Kim , Alexander Reznicek , Devendra K. Sadana
发明人： Stephen W. Bedell , Harold J. Hovel , Daniel A. Inns , Jee H. Kim , Alexander Reznicek , Devendra K. Sadana
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L31/065 , H01L31/03765 , H01L31/075 , H01L31/18 , Y02E10/548
摘要： A photovoltaic device includes a composition modulated semiconductor structure including a p-doped first semiconductor material layer, a first intrinsic compositionally-graded semiconductor material layer, an intrinsic semiconductor material layer, a second intrinsic compositionally-graded semiconductor layer, and an n-doped first semiconductor material layer. The first and second intrinsic compositionally-graded semiconductor material layers include an alloy of a first semiconductor material having a greater band gap width and a second semiconductor material having a smaller band gap with, and the concentration of the second semiconductor material increases toward the intrinsic semiconductor material layer in the first and second compositionally-graded semiconductor material layers. The photovoltaic device provides an open circuit voltage comparable to that of the first semiconductor material, and a short circuit current comparable to that of the second semiconductor material, thereby increasing the efficiency of the photovoltaic device.
摘要翻译：光伏器件包括组成调制的半导体结构，其包括p掺杂的第一半导体材料层，第一本征成分梯度半导体材料层，本征半导体材料层，第二本征组分梯度半导体层和n掺杂的第一半导体层半导体材料层。第一和第二本征成分梯度半导体材料层包括具有较大带隙宽度的第一半导体材料和具有较小带隙的第二半导体材料的合金，并且第二半导体材料的浓度朝向本征半导体第一和第二组成梯度半导体材料层中的材料层。光电器件提供与第一半导体材料相当的开路电压，以及与第二半导体材料相当的短路电流，从而提高光伏器件的效率。

7. 发明申请

US20110212622A1 SURFACE TEXTURING USING A LOW QUALITY DIELECTRIC LAYER 审中-公开
标题翻译：表面纹理使用低品质电介质层
公开(公告)号：US20110212622A1
公开(公告)日：2011-09-01
申请号：US12714426
申请日：2010-02-26
申请人： Joel P. Desouza , Harold J. Hovel , Daniel Inns , Jeehwan Kim , Devendra K. Sadana , Katherine L. Saenger
发明人： Joel P. Desouza , Harold J. Hovel , Daniel Inns , Jeehwan Kim , Devendra K. Sadana , Katherine L. Saenger
IPC分类号： H01L21/311
CPC分类号： H01L31/02363 , Y02E10/50
摘要： A low cost method is described for forming a textured Si surface such as for a solar cell which includes forming a dielectric layer containing pinholes, anisotropically etching through the pinholes to form inverted pyramids in the Si surface and removing the dielectric layer thereby producing a high light trapping efficiency for incident radiation.
摘要翻译：描述了一种用于形成纹理Si表面的低成本方法，例如用于太阳能电池，其包括形成包含针孔的电介质层，通过针孔各向异性蚀刻以在Si表面中形成倒置的金字塔并除去电介质层，从而产生高光捕获效率的入射辐射。

8. 发明申请

US20100221867A1 LOW COST SOI SUBSTRATES FOR MONOLITHIC SOLAR CELLS 审中-公开
标题翻译：用于单晶太阳能电池的低成本SOI衬底
公开(公告)号：US20100221867A1
公开(公告)日：2010-09-02
申请号：US12436249
申请日：2009-05-06
申请人： Stephen W. Bedell , Joel P. de Souza , Keith E. Fogel , Harold J. Hovel , Daniel A. Inns , Jeehwan Kim , Devendra K. Sadana , Katherine L. Saenger , Ghavam G. Shahidi
发明人： Stephen W. Bedell , Joel P. de Souza , Keith E. Fogel , Harold J. Hovel , Daniel A. Inns , Jeehwan Kim , Devendra K. Sadana , Katherine L. Saenger , Ghavam G. Shahidi
IPC分类号： H01L31/0376 , H01L21/762
CPC分类号： H01L31/03921 , H01L21/02529 , H01L21/02532 , H01L21/02573 , H01L21/02667 , H01L21/7624 , H01L21/76245 , H01L21/76262 , H01L31/046 , H01L31/0463 , H01L31/0465 , H01L31/1872 , Y02E10/50 , Y02P70/521
摘要： A lost cost method for fabricating SOI substrates is provided. The method includes forming a stack of p-type doped amorphous Si-containing layers on a semiconductor region of a substrate by utilizing an evaporation deposition process. A solid phase recrystallization step is then performed to convert the amorphous Si-containing layers within the stack into a stack of p-type doped single crystalline Si-containing layers. After recrystallization, the single crystalline Si-containing layers are subjected to anodization and at least an oxidation step to form an SOI substrate. Solar cells and/or other semiconductor devices can be formed on the upper surface of the inventive SOI substrate.
摘要翻译：提供了一种用于制造SOI衬底的损耗成本方法。该方法包括通过利用蒸发沉积工艺在衬底的半导体区域上形成一层p型掺杂的非晶态含Si层。然后进行固相重结晶步骤，以将叠层内的非晶态含硅层转化为p型掺杂单晶含Si层的堆叠。重结晶后，对单晶含Si层进行阳极氧化和至少氧化步骤以形成SOI衬底。太阳能电池和/或其他半导体器件可以形成在本发明的SOI衬底的上表面上。

9. 发明授权

US08878055B2 Efficient nanoscale solar cell and fabrication method 有权
标题翻译：高效纳米级太阳能电池及其制造方法
公开(公告)号：US08878055B2
公开(公告)日：2014-11-04
申请号：US12852991
申请日：2010-08-09
申请人： Keith E. Fogel , William S. Graham , Jeehwan Kim , Harold J. Hovel , Devendra K. Sadana , Katherine L. Saenger
发明人： Keith E. Fogel , William S. Graham , Jeehwan Kim , Harold J. Hovel , Devendra K. Sadana , Katherine L. Saenger
IPC分类号： H01L31/00 , H01L31/052 , H01L31/0236 , H01L31/0352
CPC分类号： H01L31/0527 , H01L31/02366 , H01L31/03529 , H01L31/056 , Y02E10/52
摘要： A photovoltaic device and method include a substrate layer having a plurality of structures including peaks and troughs formed therein. A continuous photovoltaic stack is conformally formed over the substrate layer and extends over the peaks and troughs. The photovoltaic stack has a thickness of less than one micron and is configured to transduce incident radiation into current flow.
摘要翻译：光电器件和方法包括具有多个结构的衬底层，包括形成在其中的峰和谷。连续的光伏堆叠保形地形成在衬底层上并且延伸超过峰和谷。光伏堆叠具有小于1微米的厚度，并且被配置为将入射辐射转换成电流。

10. 发明申请

US20120031476A1 COMPOSITIONALLY-GRADED BAND GAP HETEROJUNCTION SOLAR CELL 有权
标题翻译：组合梯形带隙异质细胞
公开(公告)号：US20120031476A1
公开(公告)日：2012-02-09
申请号：US12849966
申请日：2010-08-04
申请人： Stephen W. Bedell , Harold J. Hovel , Daniel A. Inns , Jee H. Kim , Alexander Reznicek , Devendra K. Sadana
发明人： Stephen W. Bedell , Harold J. Hovel , Daniel A. Inns , Jee H. Kim , Alexander Reznicek , Devendra K. Sadana
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L31/065 , H01L31/03765 , H01L31/075 , H01L31/18 , Y02E10/548
摘要： A photovoltaic device includes a composition modulated semiconductor structure including a p-doped first semiconductor material layer, a first intrinsic compositionally-graded semiconductor material layer, an intrinsic semiconductor material layer, a second intrinsic compositionally-graded semiconductor layer, and an n-doped first semiconductor material layer. The first and second intrinsic compositionally-graded semiconductor material layers include an alloy of a first semiconductor material having a greater band gap width and a second semiconductor material having a smaller band gap with, and the concentration of the second semiconductor material increases toward the intrinsic semiconductor material layer in the first and second compositionally-graded semiconductor material layers. The photovoltaic device provides an open circuit voltage comparable to that of the first semiconductor material, and a short circuit current comparable to that of the second semiconductor material, thereby increasing the efficiency of the photovoltaic device.
摘要翻译：光伏器件包括组成调制的半导体结构，其包括p掺杂的第一半导体材料层，第一本征成分梯度半导体材料层，本征半导体材料层，第二本征组分梯度半导体层和n掺杂的第一半导体层半导体材料层。第一和第二本征成分梯度半导体材料层包括具有较大带隙宽度的第一半导体材料和具有较小带隙的第二半导体材料的合金，并且第二半导体材料的浓度朝向本征半导体第一和第二组成梯度半导体材料层中的材料层。光电器件提供与第一半导体材料相当的开路电压，以及与第二半导体材料相当的短路电流，从而提高光伏器件的效率。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式