专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100255198A1 SOLID PRECURSOR-BASED DELIVERY OF FLUID UTILIZING CONTROLLED SOLIDS MORPHOLOGY 有权
标题翻译：使用固体前驱体的流体利用控制固体物质的流体
公开(公告)号：US20100255198A1
公开(公告)日：2010-10-07
申请号：US12438502
申请日：2007-08-31
申请人： John M. Cleary , Jose I. Arno , Bryan C. Hendrix , Donn Naito , Scott Battle , John N. Gregg , Michael J. Wodjenski , Chongying Xu
发明人： John M. Cleary , Jose I. Arno , Bryan C. Hendrix , Donn Naito , Scott Battle , John N. Gregg , Michael J. Wodjenski , Chongying Xu
IPC分类号： C23C16/44 , C23C16/00
CPC分类号： C23C16/4481 , C23C14/48 , C23C16/08 , C23C16/16 , C23C16/18 , C23C16/30 , C23C16/4402 , C23C16/45525 , C23C16/45544
摘要： Apparatus and method for volatilizing a source reagent susceptible to particle generation or presence of particles in the corresponding source reagent vapor, in which such particle generation or presence is suppressed by structural or processing features of the vapor generation system. Such apparatus and method are applicable to liquid and solid source reagents, particularly solid source reagents such as metal halides, e.g., hafnium chloride. The source reagent in one specific implementation is constituted by a porous monolithic bulk form of the source reagent material. The apparatus and method of the invention are usefully employed to provide source reagent vapor for applications such as atomic layer deposition (ALD) and ion implantation.
摘要翻译：挥发易于产生颗粒的源试剂的源试剂的装置和方法，其中通过蒸气发生系统的结构或加工特征抑制了这种颗粒产生或存在的相应源试剂蒸气。这种装置和方法适用于液体和固体源试剂，特别是固体源试剂如金属卤化物，例如氯化铪。一种具体实施方案中的源试剂由源试剂材料的多孔整体块形式构成。本发明的装置和方法有用地用于提供用于例如原子层沉积（ALD）和离子注入的应用的源试剂蒸气。

2. 发明授权

US08821640B2 Solid precursor-based delivery of fluid utilizing controlled solids morphology 有权
标题翻译：使用受控固体形态的基于固体前体的流体输送
公开(公告)号：US08821640B2
公开(公告)日：2014-09-02
申请号：US12438502
申请日：2007-08-31
申请人： John M. Cleary , Jose I. Arno , Bryan C. Hendrix , Donn Naito , Scott Battle , John N. Gregg , Michael J. Wodjenski , Chongying Xu
发明人： John M. Cleary , Jose I. Arno , Bryan C. Hendrix , Donn Naito , Scott Battle , John N. Gregg , Michael J. Wodjenski , Chongying Xu
IPC分类号： C23C16/54 , C23C16/44 , C23C16/00 , C23C16/448
CPC分类号： C23C16/4481 , C23C14/48 , C23C16/08 , C23C16/16 , C23C16/18 , C23C16/30 , C23C16/4402 , C23C16/45525 , C23C16/45544
摘要： Apparatus and method for volatilizing a source reagent susceptible to particle generation or presence of particles in the corresponding source reagent vapor, in which such particle generation or presence is suppressed by structural or processing features of the vapor generation system. Such apparatus and method are applicable to liquid and solid source reagents, particularly solid source reagents such as metal halides, e.g., hafnium chloride. The source reagent in one specific implementation is constituted by a porous monolithic bulk form of the source reagent material. The apparatus and method of the invention are usefully employed to provide source reagent vapor for applications such as atomic layer deposition (ALD) and ion implantation.
摘要翻译：挥发易于产生颗粒的源试剂的源试剂的装置和方法，其中通过蒸气发生系统的结构或加工特征抑制了这种颗粒产生或存在的相应源试剂蒸气。这种装置和方法适用于液体和固体源试剂，特别是固体源试剂如金属卤化物，例如氯化铪。一种具体实施方案中的源试剂由源试剂材料的多孔整体块形式构成。本发明的装置和方法有用地用于提供用于例如原子层沉积（ALD）和离子注入的应用的源试剂蒸气。

3. 发明授权

US07108771B2 Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films 有权
公开(公告)号：US07108771B2
公开(公告)日：2006-09-19
申请号：US10015326
申请日：2001-12-13
申请人： Chongying Xu , Thomas H. Baum , Alexander S. Borovik , Ziyun Wang , James T. Y. Lin , Scott Battle , Ravi K. Laxman
发明人： Chongying Xu , Thomas H. Baum , Alexander S. Borovik , Ziyun Wang , James T. Y. Lin , Scott Battle , Ravi K. Laxman
IPC分类号： B01D15/00 , C07C51/44 , C02F7/08 , C02F7/20
CPC分类号： C23C16/4402 , B01D3/36 , C07F7/089 , C07F7/20 , C08G77/34 , C09D4/00 , C23C16/401 , C08G77/04
摘要： A process for reducing the level(s) of water and/or other impurities from cyclosiloxanes by either azeotropic distillation, or by contacting the cyclosiloxane compositions with an adsorbent bed material. The purified cyclosiloxane material is useful for forming low-dielectric constant thin films having dielectric constants of less than 3.0, more preferably 2.8 to 2.0.

4. 发明授权

US06921062B2 Vaporizer delivery ampoule 有权
标题翻译：蒸发器运输安瓿
公开(公告)号：US06921062B2
公开(公告)日：2005-07-26
申请号：US10201518
申请日：2002-07-23
申请人： John Gregg , Scott Battle , Jeffrey I. Banton , Donn Naito , Marianne Fuierer
发明人： John Gregg , Scott Battle , Jeffrey I. Banton , Donn Naito , Marianne Fuierer
IPC分类号： C23C16/448 , B01F3/04 , C23G16/00
CPC分类号： C23C16/4483 , C23C16/4408 , C23C16/4481 , C23C16/45544 , C23C16/50 , F17C3/00 , F17C3/02 , F17C11/00 , F17C2203/03 , Y02E60/321 , Y10S261/65
摘要： A vaporizer delivery system for use in semiconductor manufacturing processes including a plurality of vertically stacked containers for holding a vaporizable source material. Each of the vertically stacked containers includes a plurality of vented protuberances extending into the interior of the each stacked container thereby providing channels for passage of a carrier gas between adjacent vertically stacked containers.
摘要翻译：一种用于半导体制造工艺的蒸发器输送系统，包括用于保持可蒸发的源材料的多个垂直堆叠的容器。每个垂直堆叠的容器包括延伸到每个堆叠的容器的内部的多个通风突起，从而提供用于在相邻的垂直堆叠的容器之间通过载气的通道。

5. 发明申请

US20080041310A1 METHOD AND APPARATUS TO HELP PROMOTE CONTACT OF GAS WITH VAPORIZED MATERIAL 有权
标题翻译：方法和装置帮助促进与气体材料接触的气体
公开(公告)号：US20080041310A1
公开(公告)日：2008-02-21
申请号：US11846394
申请日：2007-08-28
申请人： John Gregg , Scott Battle , Jeffrey Banton , Donn Naito , Ravi Laxman
发明人： John Gregg , Scott Battle , Jeffrey Banton , Donn Naito , Ravi Laxman
IPC分类号： C23C16/00
CPC分类号： C23C16/4481 , Y10S261/65
摘要： Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable mateiral disposed therein. The vessel may comprise an amoule having a removable top. Multiple containers defining multiple material support surfaces may be stacked disposed within a vessel in thermal communication with the vessel. A tube may be disposed within the vessel and coupled to a gas inlet. Filters, flow meters, and level sensors may be further provided. Product gas resuting from contact of introduced gas with vaporized material may be delivered to atomic layer deposition (ALD) or similar process equipment.
摘要翻译：可汽化材料支撑在容器内以促进引入的气体与可蒸发材料的接触，并产生包括蒸发材料的产物气体。加热元件向容器的壁提供热量以加热设置在其中的可蒸发的材料。容器可以包括具有可移除顶部的阿姆空。限定多个材料支撑表面的多个容器可以堆放在与容器热连通的容器内。管可以设置在容器内并且联接到气体入口。可以进一步提供过滤器，流量计和液位传感器。引入气体与蒸发材料接触的产物气体可以被递送到原子层沉积（ALD）或类似的工艺设备。

6. 发明申请

US20050006799A1 Method and apparatus to help promote contact of gas with vaporized material 有权
标题翻译：有助于促进气体与气化材料接触的方法和装置
公开(公告)号：US20050006799A1
公开(公告)日：2005-01-13
申请号：US10858509
申请日：2004-06-01
申请人： John Gregg , Scott Battle , Jeffrey Banton , Donn Naito , Ravi Laxman
发明人： John Gregg , Scott Battle , Jeffrey Banton , Donn Naito , Ravi Laxman
IPC分类号： B01F3/04 , C23C16/448
CPC分类号： C23C16/4481 , Y10S261/65
摘要： Structure helps support material in a container with an increased exposed surface area to help promote contact of a gas with vaporized material. For at least one disclosed embodiment, the structure may help support material for vaporization in the same form as when the material is placed at the structure. For at least one disclosed embodiment, the structure may help support material with an increased exposed surface area relative to a maximum exposed surface area the material could have at rest in the container absent the structure. For at least one disclosed embodiment, the structure may define one or more material support surfaces in an interior region of the container in addition to a bottom surface of the interior region of the container. For at least one disclosed embodiment, the structure may define in an interior region of the container one or more material support surfaces having a total surface area greater than a surface area of a bottom surface of the interior region of the container. For at least one disclosed embodiment, gas resulting from contact of received gas with vaporized material may be delivered to atomic layer deposition (ALD) process equipment.
摘要翻译：结构有助于在具有增加的暴露表面积的容器中支撑材料，以帮助促进气体与气化材料的接触。对于至少一个所公开的实施例，该结构可以帮助以与材料放置在结构处的形式相同的形式来支撑用于汽化的材料。对于至少一个公开的实施例，该结构可以帮助支撑具有相对于没有结构的材料在容器中静置的最大暴露表面积的增加的暴露表面积的材料。对于至少一个公开的实施例，除了容器的内部区域的底部表面之外，该结构可以在容器的内部区域中限定一个或多个材料支撑表面。对于至少一个公开的实施例，该结构可以在容器的内部区域中限定一个或多个材料支撑表面，其总表面积大于容器内部区域的底部表面的表面积。对于至少一个公开的实施例，由接收的气体与气化材料的接触产生的气体可以被输送到原子层沉积（ALD）工艺设备。

7. 发明申请

US20080057218A1 METHOD AND APPARATUS TO HELP PROMOTE CONTACT OF GAS WITH VAPORIZED MATERIAL 有权
标题翻译：方法和装置帮助促进与气体材料接触的气体
公开(公告)号：US20080057218A1
公开(公告)日：2008-03-06
申请号：US11930031
申请日：2007-10-30
申请人： John Gregg , Scott Battle , Jeffrey Banton , Donn Naito , Ravi Laxman
发明人： John Gregg , Scott Battle , Jeffrey Banton , Donn Naito , Ravi Laxman
IPC分类号： F26B21/14 , C23C14/02 , H05H1/24 , C23C16/00
CPC分类号： C23C16/4481 , Y10S261/65
摘要： Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable material disposed therein. The vessel may comprise an amoule having a removable top. Multiple containers defining multiple material support surfaces may be stacked disposed within a vessel in thermal communication with the vessel. A tube may be disposed within the vessel and coupled to a gas inlet. Filters, flow meters, and level sensors may be further provided. Product gas resuting from contact of introduced gas with vaporized material may be delivered to atomic layer deposition (ALD) or similar process equipment.
摘要翻译：可汽化材料支撑在容器内以促进引入的气体与可蒸发材料的接触，并产生包括蒸发材料的产物气体。加热元件向容器的壁提供热量以加热设置在其中的可蒸发材料。容器可以包括具有可移除顶部的阿姆空。限定多个材料支撑表面的多个容器可以堆放在与容器热连通的容器内。管可以设置在容器内并且联接到气体入口。可以进一步提供过滤器，流量计和液位传感器。引入气体与蒸发材料接触的产物气体可以被递送到原子层沉积（ALD）或类似的工艺设备。

8. 发明授权

US08053375B1 Super-dry reagent compositions for formation of ultra low k films 有权
标题翻译：用于形成超低k膜的超干试剂组合物
公开(公告)号：US08053375B1
公开(公告)日：2011-11-08
申请号：US11925838
申请日：2007-10-27
申请人： Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Steven M. Bilodeau , Scott Battle , William Hunks , Tianniu Chen
发明人： Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Steven M. Bilodeau , Scott Battle , William Hunks , Tianniu Chen
IPC分类号： H01L21/00 , C07F7/08 , C07C7/00
CPC分类号： H01L21/02274 , C09D183/04 , C23C16/401 , H01L21/02126 , H01L21/02203
摘要： An ultra low k dielectric film, including a silicon film containing porosity deriving from a porogen, as formed from a precursor silane and a porogen, wherein the precursor silane has a water content below 10 ppm, based on total weight of the precursor silane, and/or the porogen has a water content below 10 ppm, based on total weight of the porogen. In one implementation, the precursor silane is diethoxymethylsilane, and the porogen is bicyclo[2.2.1]-hepta-2,5-diene having a trace water content below 10 ppm, based on total weight of said bicyclo[2.2.1]-hepta-2,5-diene. These super-dry reagents are unexpectedly polymerization-resistant during their delivery and deposition in the formation of ultra low k films, and are advantageously employed to produce ultra low k films of superior character.
摘要翻译：一种超低k电介质膜，包括由前体硅烷和致孔剂形成的含有致孔剂的孔隙率的硅膜，其中前体硅烷的含水量基于前体硅烷的总重量低于10ppm，和 /或致孔剂的含水量基于致孔剂的总重量低于10ppm。在一个实施方案中，前体硅烷是二乙氧基甲基硅烷，并且致孔剂是基于所述双环[2.2.1] - 二甲基甲硅烷基的总重量的具有痕量水含量低于10ppm的双环[2.2.1] - 庚-2,5-二烯。庚-2,5-二烯。这些超级干燥试剂在它们的输送和沉积期间在超低k膜的形成期间出人意料地具有抗聚合性，并且有利地用于生产优异特性的超低k膜。

9. 发明申请

US20060235182A1 Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films 审中-公开
公开(公告)号：US20060235182A1
公开(公告)日：2006-10-19
申请号：US11452875
申请日：2006-06-14
申请人： Chongying Xu , Thomas Baum , Alexander Borovik , Ziyun Wang , James Lin , Scott Battle , Ravi Laxman
发明人： Chongying Xu , Thomas Baum , Alexander Borovik , Ziyun Wang , James Lin , Scott Battle , Ravi Laxman
IPC分类号： C08G77/04 , C08G77/34 , B32B9/04
CPC分类号： C23C16/4402 , B01D3/36 , C07F7/089 , C07F7/20 , C08G77/34 , C09D4/00 , C23C16/401 , C08G77/04
摘要： A process for reducing the level(s) of water and/or other impurities from cyclosiloxanes by either azeotropic distillation, or by contacting the cyclosiloxane compositions with an adsorbent bed material. The purified cyclosiloxane material is useful for forming low-dielectric constant thin films having dielectric constants of less than 3.0, more preferably 2.8 to 2.0.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式