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1. 发明申请

US20060014792A1 Heterocyclo inhibitors of potassium channel function 有权
标题翻译：钾通道功能的杂环抑制剂
公开(公告)号：US20060014792A1
公开(公告)日：2006-01-19
申请号：US11186991
申请日：2005-07-21
申请人： John Lloyd , Yoon Jeon , Heather Finlay , Lin Yan , Michael Gross , Serge Beaudoin
发明人： John Lloyd , Yoon Jeon , Heather Finlay , Lin Yan , Michael Gross , Serge Beaudoin
IPC分类号： C07D211/26 , A61K31/445
CPC分类号： C07D211/26 , C07D211/34 , C07D211/62 , C07D211/64 , C07D211/96 , C07D223/04 , C07D231/12 , C07D233/56 , C07D249/08 , C07D401/04 , C07D401/06 , C07D401/12 , C07D401/14 , C07D403/12 , C07D405/04 , C07D405/12 , C07D409/04 , C07D409/12 , C07D409/14 , C07D413/04 , C07D413/12 , C07D413/14 , C07D417/12
摘要： Novel heterocyclo compounds useful as inhibitors of potassium channel function (especially inhibitors of the Kv1 subfamily of voltage gated K+ channels, especially inhibitors Kv1.5 which has been linked to the ultra-rapidly activating delayed rectifier K+ current IKur), methods of using such compounds in the prevention and treatment of arrhythmia and IKur-associated conditions, and pharmaceutical compositions containing such compounds.
摘要翻译：可用作钾通道功能抑制剂的新型杂环化合物（特别是电压门控K +通道的K 1亚族的抑制剂，特别是抑制剂K > 1.5，其与超快速活化延迟整流器K +电流I K连接），使用这些化合物在预防和治疗心律失常中的方法，相关条件和含有这些化合物的药物组合物。

2. 发明申请

US20070142333A1 CYCLOALKYL INHIBITORS OF POTASSIUM CHANNEL FUNCTION 审中-公开
标题翻译：钾离子通道功能的CYCLOALKYL抑制剂
公开(公告)号：US20070142333A1
公开(公告)日：2007-06-21
申请号：US11670482
申请日：2007-02-02
申请人： John Lloyd , Yoon Jeon , Heather Finlay , Lin Yan , Michael Gross , Serge Beaudoin
发明人： John Lloyd , Yoon Jeon , Heather Finlay , Lin Yan , Michael Gross , Serge Beaudoin
IPC分类号： A61K31/55 , A61K31/541 , A61K31/5377 , A61K31/496 , A61K31/454 , A61K31/426 , A61K31/421 , C07D417/02 , C07D413/02 , C07D403/02
CPC分类号： C07D213/40 , A61K45/06 , C07C233/58 , C07C233/59 , C07C233/60 , C07C233/65 , C07C235/06 , C07C235/34 , C07C235/46 , C07C235/60 , C07C279/16 , C07C279/24 , C07C279/28 , C07C307/02 , C07C307/04 , C07C307/08 , C07C307/10 , C07C311/16 , C07C311/29 , C07C311/55 , C07C311/59 , C07C311/64 , C07C323/62 , C07C2601/02 , C07C2601/04 , C07C2601/10 , C07C2601/14 , C07C2602/08 , C07C2603/66 , C07D213/69 , C07D213/82 , C07D217/22 , C07D231/12 , C07D233/48 , C07D233/56 , C07D233/64 , C07D233/76 , C07D235/14 , C07D239/42 , C07D239/94 , C07D239/95 , C07D241/06 , C07D249/04 , C07D249/08 , C07D251/44 , C07D251/46 , C07D261/08 , C07D261/14 , C07D271/06 , C07D295/13 , C07D295/185 , C07D295/215 , C07D295/26 , C07D307/68 , C07D309/04 , C07D309/08 , C07D333/20 , C07D333/28 , C07D333/38 , C07D333/58 , C07D333/62 , C07D409/12 , C07D413/12 , C07D471/04 , C07D487/04
摘要： Novel cycloalkyl compounds useful as inhibitors of potassium channel function (especially inhibitors of the Kv1 subfamily of voltage gated K+ channels, especially inhibitors Kv1.5 which has been linked to the ultra-rapidly activating delayed rectifier K+ current IKur), methods of using such compounds in the prevention and treatment of arrhythmia and IKur-associated conditions, and pharmaceutical compositions containing such compounds.
摘要翻译：可用作钾通道功能抑制剂的新型环烷基化合物（特别是电压门控K +通道抑制剂，尤其是抑制剂K + > 1.5，其与超快速活化延迟整流器K +电流I K连接），使用这些化合物在预防和治疗心律失常中的方法，相关条件和含有这些化合物的药物组合物。

3. 发明申请

US20050234106A1 Cycloalkyl inhibitors of potassium channel function 有权
标题翻译：钾通道功能的环烷基抑制剂
公开(公告)号：US20050234106A1
公开(公告)日：2005-10-20
申请号：US10997734
申请日：2004-11-24
申请人： John Lloyd , Yoon Jeon , Heather Finlay , Lin Yan , Michael Gross , Serge Beaudoin
发明人： John Lloyd , Yoon Jeon , Heather Finlay , Lin Yan , Michael Gross , Serge Beaudoin
IPC分类号： A61K20060101 , A61K45/06 , C07C233/58 , C07C233/59 , C07C233/60 , C07C233/65 , C07C235/06 , C07C235/34 , C07C235/46 , C07C235/60 , C07C279/16 , C07C279/24 , C07C279/28 , C07C307/02 , C07C307/04 , C07C307/08 , C07C307/10 , C07C311/16 , C07C311/29 , C07C311/55 , C07C311/59 , C07C311/64 , C07C323/62 , C07D213/40 , C07D213/69 , C07D213/82 , C07D217/22 , C07D233/48 , C07D233/54 , C07D233/76 , C07D235/10 , C07D235/14 , C07D239/42 , C07D239/94 , C07D239/95 , C07D241/06 , C07D249/04 , C07D251/44 , C07D251/46 , C07D261/08 , C07D261/14 , C07D271/06 , C07D295/13 , C07D295/185 , C07D295/215 , C07D295/26 , C07D307/68 , C07D309/04 , C07D309/08 , C07D333/20 , C07D333/28 , C07D333/38 , C07D333/58 , C07D333/62 , C07D409/12 , C07D413/12 , C07D471/04 , C07D487/04 , C07D521/00 , C07D43/02 , A61K31/4164 , A61K31/4172 , A61K31/4439
CPC分类号： C07D213/40 , A61K45/06 , C07C233/58 , C07C233/59 , C07C233/60 , C07C233/65 , C07C235/06 , C07C235/34 , C07C235/46 , C07C235/60 , C07C279/16 , C07C279/24 , C07C279/28 , C07C307/02 , C07C307/04 , C07C307/08 , C07C307/10 , C07C311/16 , C07C311/29 , C07C311/55 , C07C311/59 , C07C311/64 , C07C323/62 , C07C2601/02 , C07C2601/04 , C07C2601/10 , C07C2601/14 , C07C2602/08 , C07C2603/66 , C07D213/69 , C07D213/82 , C07D217/22 , C07D231/12 , C07D233/48 , C07D233/56 , C07D233/64 , C07D233/76 , C07D235/14 , C07D239/42 , C07D239/94 , C07D239/95 , C07D241/06 , C07D249/04 , C07D249/08 , C07D251/44 , C07D251/46 , C07D261/08 , C07D261/14 , C07D271/06 , C07D295/13 , C07D295/185 , C07D295/215 , C07D295/26 , C07D307/68 , C07D309/04 , C07D309/08 , C07D333/20 , C07D333/28 , C07D333/38 , C07D333/58 , C07D333/62 , C07D409/12 , C07D413/12 , C07D471/04 , C07D487/04
摘要： Novel cycloalkyl compounds useful as inhibitors of potassium channel function (especially inhibitors of the Kv1 subfamily of voltage gated K+ channels, especially inhibitors Kv1.5 which has been linked to the ultra-rapidly activating delayed rectifier K+ current IKur), methods of using such compounds in the prevention and treatment of arrhythmia and IKur-associated conditions, and pharmaceutical compositions containing such compounds.
摘要翻译：可用作钾通道功能抑制剂的新型环烷基化合物（特别是电压门控K +通道抑制剂，尤其是抑制剂K + > 1.5，其与超快速活化延迟整流器K +电流I K连接），使用这些化合物在预防和治疗心律失常中的方法，相关条件和含有这些化合物的药物组合物。

4. 发明授权

US06858610B2 Potassium channel inhibitors 有权
标题翻译：钾通道抑制剂
公开(公告)号：US06858610B2
公开(公告)日：2005-02-22
申请号：US10210064
申请日：2002-08-02
申请人： Michael Gross , Serge Beaudoin , Aimee D. Reed
发明人： Michael Gross , Serge Beaudoin , Aimee D. Reed
IPC分类号： A61K31/417 , A61K31/44 , A61K31/4406 , A61K31/505 , A61P9/04 , A61P9/06 , A61P37/02 , A61P37/06 , A61P43/00 , C07D213/36 , C07D213/38 , C07D213/40 , C07D233/54 , C07D233/64 , C07D239/26 , C07D239/42 , C07D241/12 , C07D409/12 , C07D417/12 , A61K31/435 , A61K31/517 , C07D221/04 , C07D239/70
CPC分类号： C07D213/40 , C07D213/38 , C07D233/64 , C07D239/26 , C07D239/42 , C07D241/12 , C07D409/12 , C07D417/12
摘要： Compounds as potassium channel inhibitors and especially useful for the treatment of cardiac arrhythmias and cell proliferative disorders are described.
摘要翻译：描述了作为钾通道抑制剂的化合物，特别可用于治疗心律失常和细胞增殖性疾病。

5. 发明授权

US06458794B2 Potassium channel inhibitors 有权
公开(公告)号：US06458794B2
公开(公告)日：2002-10-01
申请号：US09741085
申请日：2000-12-21
申请人： Michael Gross , Serge Beaudoin , Aimee D. Reed
发明人： Michael Gross , Serge Beaudoin , Aimee D. Reed
IPC分类号： C07D23364
CPC分类号： C07D213/40 , C07D213/38 , C07D233/64 , C07D239/26 , C07D239/42 , C07D241/12 , C07D409/12 , C07D417/12
摘要： Compounds useful as potassium channel inhibitors and especially useful for the treatment of cardiac arrhythmias and cell proliferative disorders are described.

6. 发明授权

US6083986A Potassium channel inhibitors 失效
公开(公告)号：US6083986A
公开(公告)日：2000-07-04
申请号：US893160
申请日：1997-07-15
申请人： Neil Alexander Castle , Sean Patrick Hollinshead , Philip Floyd Hughes , Jose Serafin Mendoza , Joseph Wendell Wilson , George Salvatore Amato , Serge Beaudoin , Michael Gross , Grant McNaughton-Smith
发明人： Neil Alexander Castle , Sean Patrick Hollinshead , Philip Floyd Hughes , Jose Serafin Mendoza , Joseph Wendell Wilson , George Salvatore Amato , Serge Beaudoin , Michael Gross , Grant McNaughton-Smith
IPC分类号： A61P9/00 , A61K31/18 , A61P9/06 , A61P43/00 , C07C311/07 , C07C311/13 , C07C311/20 , C07C311/21 , C07C311/29 , C07C335/20 , C07C335/22 , A61K31/17 , A61K31/216 , A61K31/4155
CPC分类号： C07C311/20 , C07C2102/08
摘要： Compounds useful as potassium channel inhibitors and especially useful for the treatment of cardiac arrhythmias and cell proliferative disorders are described.

7. 发明申请

US20050171156A1 Prodrugs of potassium channel inhibitors 有权
标题翻译：钾通道抑制剂的前药
公开(公告)号：US20050171156A1
公开(公告)日：2005-08-04
申请号：US11028399
申请日：2005-01-03
申请人： Michael Gross , John Lloyd
发明人： Michael Gross , John Lloyd
IPC分类号： C07D211/26 , C07D211/34 , C07D211/62 , C07D211/64 , C07D211/96 , C07D223/04 , C07D401/04 , C07D401/06 , C07D401/12 , C07D401/14 , C07D403/12 , C07D405/04 , C07D405/12 , C07D409/04 , C07D409/12 , C07D409/14 , C07D413/04 , C07D413/12 , C07D413/14 , C07D417/12 , C07D521/00 , A61K31/445
CPC分类号： C07D211/34 , C07D211/26 , C07D211/62 , C07D211/64 , C07D211/96 , C07D223/04 , C07D231/12 , C07D233/56 , C07D249/08 , C07D401/04 , C07D401/06 , C07D401/12 , C07D401/14 , C07D403/12 , C07D405/04 , C07D405/12 , C07D409/04 , C07D409/12 , C07D409/14 , C07D413/04 , C07D413/12 , C07D413/14 , C07D417/12
摘要： Compounds useful as prodrugs of potassium channel inhibitor compounds, in particular as prodrugs of Kv1.5 channel inhibitors.
摘要翻译：可用作钾通道抑制剂化合物前药的化合物，特别是作为Kv1.5通道抑制剂的前药。

8. 发明授权

US08961359B2 Planet carrier and clutch housing 有权
标题翻译：行星架和离合器外壳
公开(公告)号：US08961359B2
公开(公告)日：2015-02-24
申请号：US13569139
申请日：2012-08-07
申请人： Justin Floro , Thomas D. Koch , Michael Gross , Perry G. Cruce , Anthony R. Johnson , Clifford Garrison , Lawrence A. Rutledge
发明人： Justin Floro , Thomas D. Koch , Michael Gross , Perry G. Cruce , Anthony R. Johnson , Clifford Garrison , Lawrence A. Rutledge
IPC分类号： F16H57/08
CPC分类号： F16D13/76 , F16H57/082
摘要： A planet carrier and clutch housing for a transmission is provided. The planet carrier and clutch housing includes a first deck, a second deck, an annulus and a plurality of planet carrier posts. The first deck has an inner rim, an outer rim, planet shaft bores and control oil bores. The second deck has an inner rim, an outer rim, a piston recess disposed between the inner and outer rims, planet shaft bores and control oil bores fluidly coupled to the piston recess. The annulus extends from the second deck. The planet carrier posts connect the first deck to the second deck, and each post has a control oil bore fluidly coupling respective control oil bores in the first and second decks. The inner surface of each second deck planet shaft bore may include a groove to receive a planet shaft seal.
摘要翻译：提供了用于变速器的行星架和离合器壳体。行星架和离合器壳体包括第一甲板，第二甲板，环形空间和多个行星架。第一个甲板具有内缘，外缘，行星轴孔和控制油孔。第二甲板具有内边缘，外缘，设置在内轮缘和外轮缘之间的活塞凹槽，行星轴孔和流体地联接到活塞凹部的控制油孔。环从第二层延伸。行星架支柱将第一甲板连接到第二甲板，并且每个支柱具有在第一和第二甲板中流体连接相应控制油孔的控制油孔。每个第二甲板行星轴孔的内表面可以包括用于容纳行星轴密封件的凹槽。

9. 发明授权

US08901614B2 Location-related adjustment of the operating temperature distribution or power distribution of a semiconductor power component, and component for carrying out said method 有权
标题翻译：半导体功率部件的工作温度分布或功率分布的位置相关调整，以及用于实施所述方法的部件
公开(公告)号：US08901614B2
公开(公告)日：2014-12-02
申请号：US12990569
申请日：2009-05-19
申请人： Michael Stoisiek , Michael Gross
发明人： Michael Stoisiek , Michael Gross
IPC分类号： H01L23/52 , H01L29/78 , H01L21/67 , H01L29/423 , G05D23/19 , H03K17/14 , H03K17/08
CPC分类号： G05D23/19 , H01L21/67098 , H01L21/67248 , H01L29/4238 , H01L29/7802 , H01L29/7816 , H01L29/7831 , H03K17/145 , H03K2017/0806
摘要： Described is a method for adjusting an operating temperature of MOS power components composed of a plurality of identical individual cells and a component for carrying out the method. As a characteristic feature, the gate electrode network (4) of the active chip region is subdivided into several gate electrode network sectors (B1, B2, B3) which are electrically isolated from one another by means of isolating points and to each of which a different gate voltage is fed via corresponding contacts.
摘要翻译：描述了一种用于调整由多个相同的单个单元组成的MOS功率组件的工作温度和用于执行该方法的组件的方法。作为特征的特征在于，有源芯片区域的栅电极网络（4）被细分为几个通过隔离点彼此电隔离的栅极网络扇区（B1，B2，B3），并且每个不同的栅极电压通过相应的触点馈送。

10. 发明授权

US08207031B2 Mask-saving production of complementary lateral high-voltage transistors with a RESURF structure 有权
标题翻译：使用RESURF结构掩盖了生产互补的横向高压晶体管
公开(公告)号：US08207031B2
公开(公告)日：2012-06-26
申请号：US12593310
申请日：2008-03-26
申请人： Christoph Ellmers , Thomas Uhlig , Felix Fuernhammer , Michael Stoisiek , Michael Gross
发明人： Christoph Ellmers , Thomas Uhlig , Felix Fuernhammer , Michael Stoisiek , Michael Gross
IPC分类号： H01L21/8238
CPC分类号： H01L21/823807 , H01L21/823814 , H01L27/0922
摘要： Methods of forming, on a substrate, a first lateral high-voltage MOS transistor and a second lateral high-voltage MOS transistor complementary to said first one are disclosed. According to one embodiment, the method includes (1) providing a substrate of a first conductivity type including a first active region for said first lateral high-voltage MOS transistor and a second active region for said second lateral high-voltage MOS transistor and (2) forming at least one first doped region of the first conductivity type in the first active region and forming in the second active region a drain extension region of the second conductivity type extending from a substrate surface to an interior of the substrate, including a concurrent implantation of dopants through openings of one and the same mask into the first and second active regions. Forming of the at least one first doped region may be a sub step of a superior step of forming a double RESURF structure in the first lateral high-voltage MOS transistor, and forming the double RESURF structure may include forming doped RESURF regions as two first doped regions, one thereof above and one thereof below the drift region of the first lateral high-voltage MOS transistor, and as two further doped regions, one thereof above and one thereof below the drain extension regions of the second lateral high-voltage MOS transistor, wherein the first doped RESURF regions have an inverse conductivity type with respect to the drift region and the further doped regions have inverse conductivity type as compared to the drain extension region.
摘要翻译：公开了在基板上形成与所述第一横向高压MOS晶体管和第二横向高压MOS晶体管互补的方法。根据一个实施例，该方法包括（1）提供第一导电类型的衬底，其包括用于所述第一横向高压MOS晶体管的第一有源区和用于所述第二横向高压MOS晶体管的第二有源区和（2 ）在所述第一有源区中形成所述第一导电类型的至少一个第一掺杂区域，并且在所述第二有源区域中形成从衬底表面延伸到所述衬底内部的所述第二导电类型的漏极延伸区域，所述漏极延伸区域包括同时植入的掺杂剂通过同一掩模的开口进入第一和第二活性区域。形成至少一个第一掺杂区域可以是在第一横向高压MOS晶体管中形成双重RESURF结构的优异步骤的子步骤，并且形成双重RESURF结构可以包括形成掺杂的RESURF区域作为两个第一掺杂区域，其中一个位于第一横向高压MOS晶体管的漂移区以下，其中一个位于第二横向高压MOS晶体管的漏极延伸区之下，其中一个位于第二横向高压MOS晶体管的漏极延伸区之下，其中所述第一掺杂RESURF区域相对于所述漂移区域具有反向导电类型，并且所述另外的掺杂区域与所述漏极延伸区域相比具有反向导电类型。

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