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1. 发明授权

US5439524A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5439524A
公开(公告)日：1995-08-08
申请号：US042921
申请日：1993-04-05
申请人： John L. Cain , Michael P. Relue , Michael E. Costabile , William P. Marsh
发明人： John L. Cain , Michael P. Relue , Michael E. Costabile , William P. Marsh
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/509 , H01J37/32 , C23C16/50 , H01L21/00
CPC分类号： C23C16/45565 , C23C16/4585 , C23C16/509 , H01J37/3244 , H01J37/32449
摘要： An improved fluid distribution head for a plasma processing system characterized by a non-planar dispersion plate provided with a plurality of apertures formed therethrough, and a mechanism for flowing a process gas through the apertures of the dispersion plate. The non-planar dispersion plate is preferably provided with a concave, spherical portion having a radius of curvature of at least four feet. The mechanism for flowing the process gas through the apertures includes an enclosure defining a chamber which communicates with the dispersion plate, a gas inlet communicating with the chamber, and a source of process gas coupled to the gas inlet. The fluid distribution head preferably forms a part of a complete plasma processing system including a wafer pedestal and an R.F. generator coupled to the pedestal to form a plasma between the dispersion plate and the wafer from the process gas flowing from the dispersion plate. A method for processing a semiconductor wafer includes the steps of clamping a wafer to a pedestal (thereby imposing a curvature on the wafer) and releasing a process fluid over the wafer through a plurality of apertures provided in a non-planar dispersion plate having a complementary curvature to the curvature of the wafer.
摘要翻译：一种用于等离子体处理系统的改进的流体分配头，其特征在于具有通过其形成的多个孔的非平面分散板，以及用于使处理气体流过分散板的孔的机构。非平面分散板优选地设置有具有至少四英尺的曲率半径的凹形球形部分。使处理气体流过孔的机构包括限定与分散板连通的室的外壳，与室连通的气体入口，以及连接到气体入口的工艺气体源。流体分配头优选地形成包括晶片基座和R.F.的完整等离子体处理系统的一部分。发生器耦合到基座，以从分散板流出的工艺气体在分散板和晶片之间形成等离子体。一种用于处理半导体晶片的方法包括以下步骤：将晶片夹持到基座（从而在晶片上施加曲率），并通过设置在具有互补的非平面分散板的多个孔将晶片上的工艺流体释放曲率到晶片的曲率。

2. 发明授权

US5503881A Method of processing a semiconductor wafer 失效
标题翻译：处理半导体晶片的方法
公开(公告)号：US5503881A
公开(公告)日：1996-04-02
申请号：US440102
申请日：1995-05-12
申请人： John L. Cain , Michael P. Relue , Michael E. Costabile , William P. Marsh
发明人： John L. Cain , Michael P. Relue , Michael E. Costabile , William P. Marsh
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/509 , H01J37/32 , H05H1/24
CPC分类号： C23C16/45565 , C23C16/4585 , C23C16/509 , H01J37/3244 , H01J37/32449
摘要： An improved fluid distribution head for a plasma processing system characterized by a non-planar dispersion plate provided with a plurality of apertures formed therethrough, and a mechanism for flowing a process gas through the apertures of the dispersion plate. The non-planar dispersion plate is preferably provided with a concave, spherical portion having a radius of curvature of at least four feet. The mechanism for flowing the process gas through the apertures includes an enclosure defining a chamber which communicates with the dispersion plate, a gas inlet communicating with the chamber, and a source of process gas coupled to the gas inlet. The fluid distribution head preferably forms a part of a complete plasma processing system including a wafer pedestal and an R.F. generator coupled to the pedestal to form a plasma between the dispersion plate and the wafer from the process gas flowing from the dispersion plate. A method for processing a semiconductor wafer includes the steps of clamping a wafer to a pedestal (thereby imposing a curvature on the wafer) and releasing a process fluid over the wafer through a plurality of apertures provided in a non-planar dispersion plate having a complementary curvature to the curvature of the wafer.
摘要翻译：一种用于等离子体处理系统的改进的流体分配头，其特征在于具有通过其形成的多个孔的非平面分散板，以及用于使工艺气体流过分散板的孔的机构。非平面分散板优选地设置有具有至少四英尺的曲率半径的凹形球形部分。使处理气体流过孔的机构包括限定与分散板连通的室的外壳，与室连通的气体入口以及连接到气体入口的工艺气体源。流体分配头优选地形成包括晶片基座和R.F.的完整等离子体处理系统的一部分。发生器耦合到基座，以从分散板流出的工艺气体在分散板和晶片之间形成等离子体。一种用于处理半导体晶片的方法包括以下步骤：将晶片夹持到基座（从而在晶片上施加曲率），并通过设置在具有互补的非平面分散板的多个孔将晶片上的工艺流体释放曲率到晶片的曲率。

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